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    2SB1016 Search Results

    2SB1016 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1016 Wing Shing Computer Components PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) Original PDF
    2SB1016 Unknown Scan PDF
    2SB1016 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1016 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1016 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1016 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1016 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1016 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1016 Unknown Cross Reference Datasheet Scan PDF
    2SB1016 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB1016 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB1016 Toshiba TO-220 Package Transistors Scan PDF
    2SB1016A Toshiba Low-Frequency Power Transistors (2SB Series, 2SD Series); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: Low-Frequency Power Transistor; Part Number: 2SD1407A Original PDF
    2SB1016(A) Unknown Silicon PNP Transistor Scan PDF
    2SB1016A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1016A Toshiba Silicon PNP epitaxial type transistor for power amplifier applications Scan PDF
    2SB1016A Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE Scan PDF
    2SB1016-O Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1016-R Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1016-Y Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    2SB1016 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD1407

    Abstract: 2SB1016
    Text: 2SB1016 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 ! Complement to 2SD1407 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC)


    Original     		PDF 2SB1016 SC-67 2SD1407 -150V 2SD1407 2SB1016

    2SB1016

    Abstract: 2SD1407 2SB-1016
    Text: SavantIC Semiconductor Product Specification 2SB1016 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High breakdown voltage ·Low collector saturation voltage ·Complement to type 2SD1407 APPLICATIONS ·Power amplifier applications PINNING


    Original     		PDF 2SB1016 O-220Fa 2SD1407 2SB1016 2SD1407 2SB-1016

    B1016A

    Abstract: No abstract text available
    Text: 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE sat = −2.0 V (max) • Complementary to 2SD1407A Absolute Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SB1016A 2SD1407A 2-10R1A B1016A

    2SB1016A

    Abstract: B1016 B1016A
    Text: 2SB1016A 東芝トランジスタ シリコンPNP三重拡散形 2SB1016A ○ 電力増幅用 単位: mm • 高耐圧です。 • 飽和電圧が小さい。: VCE sat = −2.0 V (最大) : VCEO = 100 V 絶対最大定格 (Tc = 25°C) 項 目 記 号 定


    Original     		PDF 2SB1016A 2-10R1A 20070701-JA 2SB1016A B1016 B1016A

    2SD1407

    Abstract: 2SB1016
    Text: Inchange Semiconductor Product Specification 2SD1407 Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・High breakdown voltage ・Low collector saturation voltage ・Complement to type 2SB1016 APPLICATIONS ・Power amplifier applications


    Original     		PDF 2SD1407 O-220Fa 2SB1016 O-220Fa) 2SD1407 2SB1016

    D1407

    Abstract: No abstract text available
    Text: 2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE sat = 2.0 V (max) • Complementary to 2SB1016A


    Original     		PDF 2SD1407A 2SB1016A 2-10R1A D1407

    2SD1407

    Abstract: 2SB1016 low Vce sat PNP
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1016 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -2.0 V(Max)@IC= -4A ·Good Linearity of hFE ·Complement to Type 2SD1407 APPLICATIONS ·Designed for audio frequency power amplifier applications.


    Original     		PDF 2SB1016 2SD1407 -100V; 2SD1407 2SB1016 low Vce sat PNP

    D1407A

    Abstract: D1407 2SD1407A 2SB1016A
    Text: 2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE sat = 2.0 V (max) • Complementary to 2SB1016A


    Original     		PDF 2SD1407A 2SB1016A D1407A D1407 2SD1407A 2SB1016A

    D1407

    Abstract: D1407A 2SB1016A 2SD1407A
    Text: 2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE sat = 2.0 V (max) • Complementary to 2SB1016A


    Original     		PDF 2SD1407A 2SB1016A D1407 D1407A 2SB1016A 2SD1407A

    D1407A

    Abstract: D1407 2SD1407A 2SB1016A
    Text: 2SD1407A 東芝トランジスタ シリコンNPN三重拡散 2SD1407A 通 信 工 業 用 ○ 電力増幅用 • 単位: mm : VCEO = 100 V 高耐圧です。 • 飽和電圧が小さい。 : VCE sat = 2.0 V (最大) • 2SB1016A とコンプリメンタリになります。


    Original     		PDF 2SD1407A 2SB1016A 2-10R1A D1407A D1407 2SD1407A 2SB1016A

    2SD1407

    Abstract: 2SB1016
    Text: SavantIC Semiconductor Product Specification 2SD1407 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High breakdown voltage ·Low collector saturation voltage ·Complement to type 2SB1016 APPLICATIONS ·Power amplifier applications PINNING


    Original     		PDF 2SD1407 O-220Fa 2SB1016 O-220Fa) 2SD1407 2SB1016

    2SB1016

    Abstract: 2SD1407 2sb101
    Text: Inchange Semiconductor Product Specification 2SB1016 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High breakdown voltage ・Low collector saturation voltage ・Complement to type 2SD1407 APPLICATIONS ・Power amplifier applications


    Original     		PDF 2SB1016 O-220Fa 2SD1407 2SB1016 2SD1407 2sb101

    2SD1407

    Abstract: 2SB1016 pnp hfe 120-240
    Text: JMnic Product Specification 2SB1016 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High breakdown voltage ・Low collector saturation voltage ・Complement to type 2SD1407 APPLICATIONS ・Power amplifier applications PINNING PIN DESCRIPTION


    Original     		PDF 2SB1016 O-220Fa 2SD1407 15llector -100V; 2SD1407 2SB1016 pnp hfe 120-240

    B1016A

    Abstract: 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SD1407A
    Text: 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE sat = −2.0 V (max) • Complementary to 2SD1407A Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SB1016A 2SD1407A B1016A 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SD1407A

    2SB1016

    Abstract: 1C13MAX
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1016 POWER AMPLIFIER APPLICATIONS. Unit in mm 1C13MAX. 0z.2±az FEATURES: . High Breakdown Voltage : V -.gQ=-100V :i2 . Low Collector-Emitter Saturation Voltage : ^CE(sat =-2 .OV(Max.) . Complementary to 2SD1407 . Recommended for 30W High-Fidelity Audio Frequency


    OCR Scan     		PDF 2SB1016 1C13MAX. -100V 2SD1407 Q76-CU5 -50mA, 2SB1016 1C13MAX

    2SD1407

    Abstract: 2SB1016A toshiba 2sd1407 2SD1407A
    Text: TOSHIBA 2SB1016A TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • • • SILICON PNP EPITAXIAL TYPE 2 S B 1 0 1 6A Unit in mm High Breakdown Voltage : V q e O = —100V Low Collector-Emitter Saturation Voltage : VCE s a t = -2-0V (Max.) Complementary to 2SD1407A


    OCR Scan     		PDF 2SB1016A --100V 2SD1407A 2SD1407 2SB1016A toshiba 2sd1407

    2SB1016A

    Abstract: 2SD1407A
    Text: TO SHIBA 2SD1407A 2SD1407A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PO W ER AM PLIFIER APPLICATIONS • • • High Breakdown Voltage : VCEO“ 100V Low Collector Saturation Voltage : V qe sat = 2.0V (Max.) Complementary to 2SB1016A r 2 '^ "<v>0


    OCR Scan     		PDF 2SD1407A 2SB1016A 2SB1016A 2SD1407A

    toshiba 2sd1407a

    Abstract: 2SB1016A 2SD1407A
    Text: TOSHIBA 2SD1407A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD1407A POWER AMPLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : VCEO = 100V Low Collector Saturation Voltage : V qe sat -2.0V (Max.) Complementary to 2SB1016A


    OCR Scan     		PDF 2SD1407A 2SB1016A toshiba 2sd1407a 2SB1016A 2SD1407A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SD1407A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE AÍ17A PO W ER AMPLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS High. Breakdown Voltage : V£ e o = 100V Low Collector Saturation Voltage : V q e gat = 2.0V (Max.) Complementary to 2SB1016A


    OCR Scan     		PDF 2SD1407A 2SB1016A 10hts

    2SB1016A

    Abstract: toshiba 2sd1407 2SD1407A
    Text: 2SB1016A TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 0 1 6A POWER AMPLIFIER APPLICATIONS Unit in mm • High Breakdown Voltage : V q e O = —100V • Low Colleetor-Emitter Saturation Voltage : VCE sat = —2.0V (Max.) • Complementary to 2SD1407A


    OCR Scan     		PDF 2SB1016A --100V 2SD1407A 2SB1016A toshiba 2sd1407 2SD1407A

    ic 746

    Abstract: 2sd1407
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1407 POWER AMPLIFIER APPLICATIONS. FEATURES: . High Breakdown Voltage : . Low Collector Saturation Voltage : VcE sat =2.OV(Max.) . Complementary to 2SB1016 . Recommended for 30W High Fidelity Audio Frequency Amplifier Output Stage.


    OCR Scan     		PDF 2SD1407 2SB1016 ic 746 2sd1407

    2sd1407

    Abstract: 2SD14Q7
    Text: 2SD14Q7 SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES: . High Breakdown Voltage : Vc e q =100V . Low Collector Saturation Voltage : VcE sat =2.0V(Max.) . Complementary to 2SB1016 . Recommended for 30W High Fidelity Audio Frequency


    OCR Scan     		PDF 2SD14Q7 2SB1016 2SD1407 2sd1407 2SD14Q7

    2SB1016A

    Abstract: 2SD1407A
    Text: 2SD1407A TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD1407A POWER AMPLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : VCEO = 100V Low Collector Saturation Voltage : V qe sat -2.0V (Max.) Complementary to 2SB1016A


    OCR Scan     		PDF 2SD1407A 2SB1016A 2SB1016A 2SD1407A

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SB1016A TO SH IBA TRANSISTO R SILICON PNP EPITAXIAL TYPE 2 S B 1 0 1 6A PO W ER AM PLIFIER APPLICATIO NS U n it in m m 10 ±0.3 • High Breakdown Voltage : V q e q = —100V • Low Collector-Emitter Saturation Voltage 2.7±0.2 $ 5 : v C E s a t = - 2'° v (Max.)


    OCR Scan     		PDF 2SB1016A 2SD1407A