2SB1180A Search Results

2SB1180A Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF
2SB1180A	Panasonic	TRANS DARLINGTON PNP 80V 8A 3I-G1	Original	PDF
2SB1180A	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2SB1180A	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SB1180A	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SB1180A	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SB1180A	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SB1180A	Panasonic	Power Transistors	Scan	PDF
2SB1180AP	Panasonic	Silicon PNP Epitaxial Planar Type Darlington Power Transistor	Original	PDF
2SB1180AQ	Panasonic	Silicon PNP Epitaxial Planar Type Darlington Power Transistor	Original	PDF

2SB1180A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SB1180 Abstract: 2SB1180A 2SD1750 2SD1750A Text: Power Transistors 2SD1750, 2SD1750A Silicon NPN triple diffusion planar type Darlington For midium speed power switching Complementary to 2SB1180 and 2SB1180A Unit: mm 7.0±0.3 base voltage 2SD1750A +0.3 2.3±0.2 4.6±0.4 TC=25˚C Symbol 2SD1750 Ratings	Original	2SD1750, 2SD1750A 2SB1180 2SB1180A 2SD1750 2SB1180A 2SD1750 2SD1750A	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1180, 2SB1180A Silicon PNP epitaxial planar type darlington Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 2.5±0.2 (1.0) 12.6±0.3 7.2±0.3 • High forward current transfer ratio hFE	Original	2002/95/EC) 2SB1180, 2SB1180A 2SD1750, 2SD1750A 2SB1180 2SB1180A	PDF
2SB1180 Abstract: 2SB1180A 2SD1750 2SD1750A Text: Power Transistors 2SD1750, 2SD1750A Silicon NPN triple diffusion planar type Darlington For midium speed power switching Complementary to 2SB1180 and 2SB1180A Unit: mm 7.0±0.3 base voltage 2SD1750A +0.3 2.3±0.2 4.6±0.4 TC=25˚C Symbol 2SD1750 Ratings	Original	2SD1750, 2SD1750A 2SB1180 2SB1180A 2SD1750 2SB1180A 2SD1750 2SD1750A	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1180, 2SB1180A Silicon PNP epitaxial planar type darlington Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 2.5±0.2 (1.0) 12.6±0.3 7.2±0.3 M Di ain sc te on na tin nc ue e/	Original	2002/95/EC) 2SB1180, 2SB1180A 2SD1750, 2SD1750A 2SB1180	PDF
2SB1180 Abstract: 2SB1180A 2SD1750 2SD1750A Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1180, 2SB1180A Silicon PNP epitaxial planar type darlington Unit: mm 7.0±0.3 M Di ain sc te on na tin nc ue e/ d 3.0±0.2 2.0±0.2 3.5±0.2 2.5±0.2 (1.0) 12.6±0.3 7.2±0.3	Original	2002/95/EC) 2SB1180, 2SB1180A 2SB1180 2SB1180A 2SD1750 2SD1750A	PDF
2SB1180 Abstract: 2SB1180A 2SD1750 2SD1750A Text: Power Transistors 2SB1180, 2SB1180A Silicon PNP epitaxial planar type darlington Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 2.5±0.2 1.0 12.6±0.3 7.2±0.3 • High forward current transfer ratio hFE • I type package enabling direct soldering of the radiating fin to the	Original	2SB1180, 2SB1180A 2SD1750, 2SD1750A 2SB1180 2SB1180 2SB1180A 2SD1750 2SD1750A	PDF
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B	PDF
2sc5929 Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1750, 2SD1750A Silicon NPN triple diffusion planar type darlington Unit : mm 7.0±0.3 3.0±0.2 2.0±0.2 2.5±0.2 (1.0) 12.6±0.3 7.2±0.3 • High forward current transfer ratio hFE	Original	2002/95/EC) 2SD1750, 2SD1750A 2SB1180 2SB1180A 2SD1750 2SD1750A	PDF
2sb1750 Abstract: No abstract text available Text: Power Transistors 2SD1750, 2SD1750A Silicon NPN triple diffusion planar type darlington Unit : mm 7.0±0.3 3.0±0.2 2.0±0.2 2.5±0.2 1.0 12.6±0.3 7.2±0.3 • High forward current transfer ratio hFE • High-speed switching • I type package enabling direct soldering of the radiating fin to the	Original	2SD1750, 2SD1750A 2SB1180 2SB1180A 2SD1750 2SD1750A 2sb1750	PDF
2N5657 equivalent Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.	Original	2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes	PDF
MJE494 Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS	Original	BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037	PDF
2SD669 equivalent Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc	Original	2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544	PDF
2SC495 Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink	Original	MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar	PDF

D42C5 Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is	Original	MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220	PDF
mje521 equivalent Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry	Original	MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100	PDF
2N3055 Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes	Original	MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64	PDF
2N5631 equivalent Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —	Original	2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator	PDF
BD179-10 equivalent Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.	Original	BD179 BD180 BD179-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD179-10 equivalent BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1	PDF
sec tip41c Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power	Original	MJL3281A MJL1302A MJL3281A* MJL1302A* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A sec tip41c MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943	PDF
TRANSISTOR BC 384 Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required	Original	TIP47 E69369, MJF47 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TRANSISTOR BC 384 BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100	PDF
2SB1180 Abstract: panasonic 2SB panasonic 2SD Text: Power T ransistors 2SB1180, 2SB1180A 2SB1180, 2SB1180A • Package Dimensions U nit I mm Silicon PNP Epitaxial Planar Darlington Type 3.7max. 7.3m ax. Medium Speed Power Switching . Complementary Pair with 2SD 1750, 2SD 1750A 3.2m ax. 0 . 9 1 0.1 0.5max, ■ Features	OCR Scan	2SB1180, 2SB1180A 2SB1180 panasonic 2SB panasonic 2SD	PDF
2SB1180 Abstract: 2SB1180A 2SD1750 2SD1750A Text: Power T ransistors 2SB1180, 2SB1180A 2SB1180, 2SB1180A Package Dimensions Silicon PNP Epitaxial Planar Darlington Type Medium Speed Power Switching . Complementary Pair with 2SD1750, 2SD1750A • Features ‘ • High DC c u rre n t gain Iif e • High sp eed sw itching	OCR Scan	2SB1180, 2SB1180A 2SD1750, 2SD1750A 2SB1180 2SB1180A 2SD1750 2SD1750A	PDF
d1750 Abstract: No abstract text available Text: Pow er Transistors 2 SD1 7 5 0 , 2 SD1 7 5 0 A 2SD1750, 2SD1750A Package Dimensions U n i t ! mm Silicon NPN Triple-Diffused Planar Darlington Type 3.7max. 7.3m ax. Medium speed Power Switching Complementary Pair with 2SB1180, 2SB1180A 3.2max. 0.9 ±0.1 0.5max.-	OCR Scan	2SD1750, 2SD1750A 2SB1180, 2SB1180A 2SD1750 2SD1750A i32flS2 d1750	PDF

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2SB1180A Search Results

2SB1180A Datasheets (9)

2SB1180A Datasheets Context Search

2SB1180

Untitled

2SB1180

Untitled

2SB1180

2SB1180

sn76131

2sc5929

Untitled

2sb1750

2N5657 equivalent

MJE494

2SD669 equivalent

2SC495

D42C5

mje521 equivalent

2N3055

2N5631 equivalent

BD179-10 equivalent

sec tip41c

TRANSISTOR BC 384

2SB1180

2SB1180

d1750