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    2SC2715O Search Results

    2SC2715O Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC2715-O Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2715O Toshiba Silicon NPN Epitaxial Planar Type Transistor Scan PDF
    2SC2715-O Toshiba TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE(PCT PROCESS) Scan PDF

    2SC2715O Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC2715

    Abstract: 2SC2715-Y 2SC2715-O 2SC2715-R
    Text: 2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type PCT process 2SC2715 High Frequency Amplifier Applications Unit: mm • High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz) · Recommended for FM IF, OSC stage and AM CONV. IF stage. Maximum Ratings (Ta = 25°C)


    Original     		2SC2715 2SC2715 2SC2715-Y 2SC2715-O 2SC2715-R PDF

    marking NF

    Abstract: 2SC2715-O
    Text: 2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type PCT process 2SC2715 High Frequency Amplifier Applications Unit: mm • High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) • Recommended for FM IF, OSC stage and AM CONV. IF stage. Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SC2715 SC-59 marking NF 2SC2715-O PDF

    marking NF

    Abstract: No abstract text available
    Text: 2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type PCT process 2SC2715 High Frequency Amplifier Applications Unit: mm • High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) • Recommended for FM IF, OSC stage and AM CONV. IF stage. Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SC2715 SC-59 marking NF PDF

    2SC2715

    Abstract: 2SC2715O
    Text: 2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type PCT process 2SC2715 High Frequency Amplifier Applications Unit: mm • High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) • Recommended for FM IF, OSC stage and AM CONV. IF stage. Maximum Ratings (Ta = 25°C)


    Original     		2SC2715 SC-59 2SC2715 2SC2715O PDF