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    Shindengen Electronic Manufacturing Co Ltd 2SC2937

    Bipolar Junction Transistor, NPN Type, SIP-FLANGE
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    Quest Components 2SC2937 9
    • 1 $11.25
    • 10 $5.625
    • 100 $5.625
    • 1000 $5.625
    • 10000 $5.625
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    2SC293 Datasheets (97)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC293 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC293 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC293 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC293 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC293 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC293 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC293 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC293 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC293 Unknown Vintage Transistor Datasheets Scan PDF
    2SC293 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC2930 Collmer Semiconductor Power / High Speed / Transistors Scan PDF
    2SC2930 Collmer Semiconductor Large Current Speed Switching / Darlington / Building Block Transistors Scan PDF
    2SC2930 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2930 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC2930 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC2930 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC2930 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2930 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC2931 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2931 Unknown Japanese Transistor Cross References (2S) Scan PDF

    2SC293 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC2934

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC2934 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·High VCEO ·Low COB APPLICATIONS ·For TV video output amplification PINNING（see Fig.2） PIN DESCRIPTION 1 Emitter 2 Collector 3 Base


    Original     		PDF 2SC2934 O-126 2SC2934

    2SC293

    Abstract: 2SC2937
    Text: Inchange Semiconductor Product Specification 2SC2937 Silicon NPN Power Transistors • DESCRIPTION ·With TO-247 package ·Switching power transistor ·High breakdown voltage APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base


    Original     		PDF 2SC2937 O-247 O-247) 2SC293 2SC2937

    2SC2939

    Abstract: transistor Ic 1A datasheet NPN
    Text: Inchange Semiconductor Product Specification 2SC2939 Silicon NPN Power Transistors • DESCRIPTION ·With TO-247 package ·Switching power transistor ·High breakdown voltage APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base


    Original     		PDF 2SC2939 O-247 O-247) 2SC2939 transistor Ic 1A datasheet NPN

    2SC2934

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC2934 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·High VCEO ·Low COB APPLICATIONS ·For TV video output amplification PINNING see Fig.2 PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings Ta=25


    Original     		PDF 2SC2934 O-126 2SC2934

    Untitled

    Abstract: No abstract text available
    Text: 2SC2933 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)17 V(BR)CBO (V)35 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)3.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0mØ @V(CBO) (V) (Test Condition)15


    Original     		PDF 2SC2933

    Untitled

    Abstract: No abstract text available
    Text: 2SC2938 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)500 I(C) Max. (A)4 Absolute Max. Power Diss. (W)100# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)500 V(CE)sat Max. (V)0.7 @I(C) (A) (Test Condition)5.0


    Original     		PDF 2SC2938 Freq20M

    2SC2930

    Abstract: Fuji 2SC2930
    Text: 2SC2930 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE, HIGH CURRENT ＮＰＮ三重拡散プレーナ形 高耐圧大電流、高速スイッチング用 HIGH SPEED SWITCHING 外形寸法 : Outline Drawings 外形寸法: TO-3 特長 ：Features


    Original     		PDF 2SC2930 2SC2930 Fuji 2SC2930

    TO-247 NPN SILICON POWER TRANSISTORS

    Abstract: 2SC2939 transistor TO-247 Outline Dimensions
    Text: SavantIC Semiconductor Product Specification 2SC2939 Silicon NPN Power Transistors DESCRIPTION •With TO-247 package ·Switching power transistor ·High breakdown voltage APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base 2


    Original     		PDF 2SC2939 O-247 O-247) TO-247 NPN SILICON POWER TRANSISTORS 2SC2939 transistor TO-247 Outline Dimensions

    Untitled

    Abstract: No abstract text available
    Text: 2SC2932 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)17 V(BR)CBO (V)35 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0mØ @V(CBO) (V) (Test Condition)15


    Original     		PDF 2SC2932

    2SC2937

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC2937 Silicon NPN Power Transistors DESCRIPTION •With TO-247 package ·Switching power transistor ·High breakdown voltage APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base 2


    Original     		PDF 2SC2937 O-247 O-247) 2SC2937

    2SC1626Y

    Abstract: PT8860 2SC22 2SC1626-Y 2SC2494 2N5764 2N295 2N1720 2SC1626Y NPN 2N1718
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 < 1 A, BUX87 2N5010 2N5011 2SC1004 2N5012 2SC3184 2SC1004A 2N5013 2N5014 2N5015 ~~~~6~S 15 20 S01409 2SC2931 2SC1970 2SC1620 2SC22 GES5551 TH596 2SC3116 ~~g:~~A 25 30 40326 40635 2S01458 2S01483 2N5768 2N5768


    Original     		PDF 220var 37var 2SC2117 2S0359 2S0360 TN1711 2S0414 2S0414 237var 2SC1626Y PT8860 2SC22 2SC1626-Y 2SC2494 2N5764 2N295 2N1720 2SC1626Y NPN 2N1718

    2SC2939

    Abstract: No abstract text available
    Text: 2SC2939 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)450ºè V(BR)CBO (V)500 I(C) Max. (A)10 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SC2939 Freq20M time500n

    Untitled

    Abstract: No abstract text available
    Text: 2SC2937 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)500 I(C) Max. (A)10 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SC2937

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2933 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2933 is silicon NPN epitaxial planar type transitor specifically designed for power amplifiers in 800 ~ 940MHz band. Dimensions in mm FEATURES • High gain. High efficiency:


    OCR Scan     		PDF 2SC2933 2SC2933 940MHz 900MHz, 900MHz

    T rf transitor

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2933 NPN E P IT A X IA L P L A N A R T Y P E DESCRIPTION OUTLINE DRAWING 2SC2933 is silicon NPN epitaxial planar type transitor specifically designed for power amplifiers in 800 ~ 940MHz band. Dimensions in mm FEATURES • High gain. High efficiency:


    OCR Scan     		PDF 2SC2933 2SC2933 940MHz 900MHz, 900MHz T rf transitor

    R27 transistor

    Abstract: 2SC2932
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2932 NPN E P IT A X IA L PLAN AR T Y P E DESCRIPTION 2SC2932 is a silicon NPN epitaxial planar type transistor spe­ cifically designed fo r power amplifiers applications in 8 0 0 — 9 4 0 MHz UHF band. OUTLINE DRAWING Dimensions in mm


    OCR Scan     		PDF 2SC2932 2SC2932 900MHz, 900MHz. R27 transistor

    xg transistor

    Abstract: OF npn transitor 2SC2933 9T TRANSISTOR T31B
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2933 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC2933 is silicon OUTLINE DRAWING NPN epitaxial planar typ e transito r Dimensions in mm spe cifica lly designed fo r power am plifiers in 800 ~ 940M H z band. FEATURES • High gain. High e fficie n cy:


    OCR Scan     		PDF 2SC2933 900MHz, 900MHz 800MHz 2SC2933 900Mi xg transistor OF npn transitor 9T TRANSISTOR T31B

    2SC2978

    Abstract: 2SC2936 2SC2950 2SA1227 2SC2954 2SC2918 2SC2932 2SC2933 2SC2936H 2SC2941
    Text: - 140 - Ta=25?C 1*EP(àTc=25‘1C M 2SC2932 2SC2933 2SC2936 2SC2936H 2SC2941 2SC2944 2SC2946 2SC2946(1) 2SC2949 2SC2950 2SC2951 2SC2952 2SC2953 2SC2954 2SC2958 2SC2959 2SC296Ö 2SC2964 2SC2965 2SC2975 2SC2976 2SC2977 2SC2978 2SC2979 2SC2981 2SC2982 2SC2983


    OCR Scan     		PDF 2SC2932 2SC2933 2SC2936 2SC2936H 2SC2941 2SC2944 2SC2946 2SC2978 O-220ABB 2SC2978 2SC2950 2SA1227 2SC2954 2SC2918 2SC2932 2SC2933

    2SC2932

    Abstract: RF POWER TRANSISTOR NPN R27 transistor
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2932 NPN EPITAXIAL PLANAR T YP E DESCRIPTION 2 S C 2 9 3 2 is a s ilic o n NPN e p ita x ia l p la n a r ty p e tra n s is to r spe­ OUTLINE DRAWING D im e n s io n s in m m c if ic a lly designed fo r p o w e r a m p lifie rs a p p lic a tio n s in 8 0 0 —9 4 0


    OCR Scan     		PDF 2SC2932 2SC2932 RF POWER TRANSISTOR NPN R27 transistor

    2SC2937

    Abstract: T8W40F1
    Text: SHINDENGEN ELECTRIC MIE li F G AEnaa? D 0QD007b 3 - r * « .3 3 -/ j? h s h e j »Outline Dimensions 5.010 3 O1“1 w e i g h t • 6.1g u n i t - mm • Ratings Maximum 2SC2937 Conditions T 8 W 4 0 fi Unit Storage Tem perature T s tg - 5 5 ~ + 150 °C Junction Tem perature


    OCR Scan     		PDF 00D0D7b 2SC2937 T8W40F1 T8W40F1

    2SC2770

    Abstract: 2SC2930 ETN36-030 2SC2443 2SD806 ET125 ET127 ETM36-030 ETN01-055 ETN31-055
    Text: . COLLMER SEMICONDUCTOR INC 2SE D • I S5BÔ7TB OÜD1GTE 5 Hi 7^35-/*5* Ratings and Specifications ■r-,33 -¿f ¡1 0 Large current speed switching transistors • These Ic can handle large current up to 3 0 or 5 0 Amps yet the switching speed is very high.


    OCR Scan     		PDF 2SC2930 2SC2443 MD-18 ET127 2SC2770 ETN01-055 ETN31-055 ETM36-030 ETN36-030 ET1257 2SD806 ET125

    etg36 040d

    Abstract: 2SC2930 diode b6 k 450 ETG36-040C 2SD1071 2SD1073 2SD1726 2SD1797 2SD2350 2SD833
    Text: T ra n sisto rs COLLHER Q SEMICONDUCTOR INC 4ÖE » • 2330712 OODlbOa 2T2 «COL High speed sw itch in g d arlin gton transistors • These are o f d arling to n typ e and are provided w ith a h ig h er hFE. • S w itchin g speed is in th e rang e o f tf=1|as.


    OCR Scan     		PDF ETG36-040C ETG36-040D O-220F ET375 2SC2930 etg36 040d diode b6 k 450 2SD1071 2SD1073 2SD1726 2SD1797 2SD2350 2SD833

    2SC2930

    Abstract: 2SC2770 ET127 ETN01-055 2SC2443 2SD806 ET125 ETM36-030 ETN31-055 ETN36-030
    Text: . COLLMER SEMICONDUCTOR INC 2SE D • I S5BÔ7TB OÜD1GTE 5 Hi 7^35-/*5* Ratings and Specifications ■r-,33 -¿f ¡1 0 Large current speed switching transistors • These Ic can handle large current up to 3 0 or 5 0 Amps yet the switching speed is very high.


    OCR Scan     		PDF 2SC2930 2SC2443 MD-18 ET127 2SC2770 ETN01-055 ETN31-055 ETM36-030 ETN36-030 ET1257 2SD806 ET125

    2sc2938

    Abstract: g time
    Text: Æà MOS PEC SWITCHMODE SERIES NPN POWER TRANSISTORS . designed for use in high-voltage,high-speed,power switching applications such as switching regulator's,inverters, and conveter. FEATURES: *Collector-Emitter Sustaining Voltagev CEO su« = 40° v (Min)


    OCR Scan     		PDF 2SC2938 10AMPERE 2SC2938 Tc-25 g time