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    2SC363 Search Results

    2SC363 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC3631-Z-E1-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-3Z, / Visit Renesas Electronics Corporation
    2SC3632-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-3, / Visit Renesas Electronics Corporation
    2SC3631(0)-Z-E1-AY Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
    2SC3631-AY Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
    2SC3631-Z-E1-AY Renesas Electronics Corporation Bipolar Power Transistors, MP-3Z, / Visit Renesas Electronics Corporation
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    2SC363 Price and Stock

    Amphenol Aerospace JT06RE-22-2SC(363)

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    Amphenol Aerospace JT00RE-20-2SC(363)

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    Amphenol Aerospace JT07RE-24-2SC(363)

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    Amphenol Aerospace JT00RE-22-2SC(363)

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    Amphenol Aerospace JT06RE-24-2SC(363)

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    2SC363 Datasheets (103)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC363 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC363 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC363 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC363 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC363 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC363 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC363 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC363 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC363 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC363 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC363 Unknown Cross Reference Datasheet Scan PDF
    2SC3630 Mitsubishi RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE Scan PDF
    2SC3630 Mitsubishi NPN EPITAXIAL PLANAR TYPE Scan PDF
    2SC3630 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SC3630 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3630 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC3630 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3631 NEC Semiconductor Selection Guide 1995 Original PDF
    2SC3631 NEC Semiconductor Selection Guide Original PDF
    2SC3631 Unknown The Transistor Manual (Japanese) 1993 Scan PDF

    2SC363 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN1637C NPN Triple Diffused Planar Silicon Transistor 2SC3638 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High reliability Adoption of HVP process . · Fast speed. · High breakdown voltage.


    Original     		PDF EN1637C 2SC3638 2SC3638]

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN1614C NPN Triple Diffused Planar Silicon Transistor 2SC3636 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High reliability Adoption of HVP process . · Fast speed. · High breakdown voltage.


    Original     		PDF EN1614C 2SC3636 2SC3636]

    16373

    Abstract: sanyo 16373 sanyo horizontal transistor
    Text: Ordering number:EN1637C NPN Triple Diffused Planar Silicon Transistor 2SC3638 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High reliability Adoption of HVP process . · Fast speed. · High breakdown voltage.


    Original     		PDF EN1637C 2SC3638 2SC3638] 16373 sanyo 16373 sanyo horizontal transistor

    2SC3636

    Abstract: 2SC363
    Text: Inchange Semiconductor Product Specification 2SC3636 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ,high speed ・High reliability APPLICATIONS ・Ultrahigh-definition CRT display horizontal deflection output applications


    Original     		PDF 2SC3636 2SC3636 2SC363

    2SC3631

    Abstract: 2SC3631Z 2SA1412-Z 2SC3631-Z TC1664A
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC3631-Z NPN SILICON TRIPLE DIFFUSED TRANSISTOR PACKAGE DRAWING Unit: mm The 2SC3631-Z is designed for High Voltage Switching, especially in 5.5 ±0.2 • High Voltage VCEO = 400 V tf < 0.7 s • Complement to 2SA1412-Z


    Original     		PDF 2SC3631-Z 2SC3631-Z 2SA1412-Z 2SC3631 2SC3631Z 2SA1412-Z TC1664A

    D1825

    Abstract: 2sc3631 2SA1412-Z 2SC3631-Z 2sa1412
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1412-Z PNP SILICON TRIPLE DIFFUSED TRANSISTOR PACKAGE DRAWING Unit: mm The 2SA1412-Z is designed for High Voltage Switching, especially in 5.5 ±0.2 • High Voltage: VCEO = −400 V • High Speed: tf ≤ 0.7 s • Complement to 2SC3631-Z


    Original     		PDF 2SA1412-Z 2SA1412-Z 2SC3631-Z D1825 2sc3631 2SC3631-Z 2sa1412

    2SC3638

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC3638 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ,high speed ・High reliability APPLICATIONS ・Ultrahigh-definition CRT display horizontal deflection output applications


    Original     		PDF 2SC3638 2SC3638

    transistor 2sC3632

    Abstract: 2SC3632 2SC3632-Z NPN Transistor 600V
    Text: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SC3632-Z +0.15 6.50-0.15 +0.2 5.30-0.2 +0.15 1.50 -0.15 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 0.5ìs +0.1 0.80-0.1 +0.28 1.50 -0.1


    Original     		PDF 2SC3632-Z O-252 100mA 400mA -50mA transistor 2sC3632 2SC3632 2SC3632-Z NPN Transistor 600V

    2SC3632

    Abstract: 5956A 3632-Z
    Text: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistors 2SC3632,3632-Z NPN三重拡散形シリコン・トランジスタ 高速度高耐圧スイッチング用 特 外形図（単位：mm） ★ 徴 6.5 ±0.2 ○スイッチングスピードが速い。


    Original     		PDF 2SC3632 3632-Z Cycle50 O-251MP-3 O-252MP-3Z D18267JJ3V0DS003 TC-5956A D18267JJ3V0DS 5956A 3632-Z

    transistor 2sC3632

    Abstract: 2SA1413-Z 2SC3632-Z 2SC3632 tc1665
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC3632-Z NPN SILICON EPITAXIAL TRANSISTOR PACKAGE DRAWING Unit: mm The 2SC3632-Z is designed for High Voltage Switching, especially in 5.5 ±0.2 • High Voltage VCEO = 600 V tf < 0.5 s • Complement to 2SA1413-Z 1 2 3


    Original     		PDF 2SC3632-Z 2SC3632-Z 2SA1413-Z transistor 2sC3632 2SA1413-Z 2SC3632 tc1665

    2SC3631

    Abstract: 3631-Z
    Text: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistors 2SC3631,3631-Z NPN三重拡散形シリコン・トランジスタ 高速度高耐圧スイッチング用 特 外形図（単位：mm） ★ 徴 6.5 ±0.2 ○スイッチングスピードが速い。


    Original     		PDF 2SC3631 3631-Z Cycle50 O-251MP-3 VCEO400 O-252MP-3Z D18266JJ3V0DS003 TC-5907A 3631-Z

    2SC3638

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC3638 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage ,high speed ·High reliability APPLICATIONS ·Ultrahigh-definition CRT display horizontal deflection output applications PINNING


    Original     		PDF 2SC3638 2SC3638

    2SC3637

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC3637 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage ,high speed ·High reliability APPLICATIONS ·Ultrahigh-definition CRT display horizontal deflection output applications PINNING


    Original     		PDF 2SC3637 2SC3637

    2SC3637

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC3637 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ,high speed ・High reliability APPLICATIONS ・Ultrahigh-definition CRT display horizontal deflection output applications


    Original     		PDF 2SC3637 2SC3637

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SC3632-Z +0.15 6.50-0.15 +0.2 5.30-0.2 +0.15 1.50 -0.15 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 0.5ìs +0.1 0.80-0.1 +0.28 1.50 -0.1 High speed tf +0.2 9.70 -0.2


    Original     		PDF 2SC3632-Z O-252 100mA 400mA -50mA

    RF POWER TRANSISTOR NPN

    Abstract: 2SC3630 1 w NPN EPITAXIAL PLANAR TYPE
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3630 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC3630 is a silicon NPN epitaxial planar type transistor specifi­ OUTLINE DRAWING Dimensions in mm cally designed fo r U H F pow er am plifiers applications. FEATURES • High pow er gain:


    OCR Scan     		PDF 2SC3630 520MHz, 520MHz RF POWER TRANSISTOR NPN 1 w NPN EPITAXIAL PLANAR TYPE

    2SC3632

    Abstract: 1665A 2SA1413-Z 2SC3632-Z MEI-1202 transistor 2sC3632
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC3632-Z NPN SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION PACKAGE D IM EN SIO N S 2SC3632-Z is designed fo r High Voltage Switching, especially in in millimeters Hybrid Integrated Circuits. , FEATURES • 2.3±0.2 6 .5±0.2


    OCR Scan     		PDF 2SC3632-Z 2SC3632-Z 2SA1413-Z IEI-1209) 2SC3632 1665A 2SA1413-Z MEI-1202 transistor 2sC3632

    tc1665

    Abstract: TC-1665A transistor mp
    Text: SILICON TRANSISTOR 2SC3632-Z NPN SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION 2 S C 363 2-Z is des ig n e d fo r High V o ltag e S w itching, especially in PACKAGE DIMENSIONS in m illim eters Hybrid In te g rate d Circuits. FEATURES • H ig h V o lta g e V ceo = 600 V


    OCR Scan     		PDF 2SC3632-Z fEI-1209) 3632-Z tc1665 TC-1665A transistor mp

    2SC3638

    Abstract: No abstract text available
    Text: Ordering number: EN 1637B _ 2SC3638 NPN Triple Diffused Planar Silicon Transistor V e r y H l g h -D e f i n i t i o n D i s p l a y Ho r i z o n t a l D e f l e c t i o n O u t p u t A p p l i c a t i o n s Features . High reliability Adoption of HVP process


    OCR Scan     		PDF 1637B 2SC3638

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 1615B 2SC3637 NPN Triple Diffused Planar Silicon Transistor SANYO Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications i Features . High reliability Adoption of HVP process . Fast speed. . High breakdown voltage.


    OCR Scan     		PDF 1615B 2SC3637 100mA T03PB H227KI/B095KI/N194KI GD2033D

    2sc3632

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2 S C 3 63 2-Z NPN SILICON EPITAXIAL TRANSISTOR M P -3 DESCRIPTION 2SC3632-Z is designed fo r High Voltage Switching, especially in Hybrid Integrated Circuits. PACKAGE DIMENSIONS in millimeters FEATURES • High Voltage V qeo = 600 V • High Speed tf < 0.5 ms


    OCR Scan     		PDF 2SC3632-Z 2SC3632-Z 2SA1413-Z 2sc3632

    Untitled

    Abstract: No abstract text available
    Text: Ordering n u m ber: EN 1 6 1 4 B _ 2SC3636 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features . High reliability Adoption of HVP process . Fast speed. . High breakdown voltage.


    OCR Scan     		PDF 2SC3636 VCC-200V T03PB 4227KI/3095KI/N174KI 0Q2DB57

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR □GITb'ìS =H2 2SC3630 NPN EPITAXIAL PLANAR T YPE DESCRIPTION 2SC3630 is a silicon NPN epitaxial planar type transistor specifi­ cally designed fo r U HF power am plifiers applications. OUTLINE DRAWING Dim ensions in mm FEATURES


    OCR Scan     		PDF 2SC3630 2SC3630 520MHz, 150pF, 1500pF,

    1615B

    Abstract: 2SC3637 777T
    Text: Ordering number: EN 1615B y i I No,1615B _ 2SC3637 NPN T ri ple Diffused Planar S i l i c o n T ra n si st o r Very Hi g h -D e f i n i t i o n D is p l a y Ho r iz o n t a l De f l e c t i o n Output Ap p l i c a t i o n s Features . High reliability Adoption of HVP process


    OCR Scan     		PDF 1615B 2SC3637 1615B 2SC3637 777T