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    2SC4675 Search Results

    2SC4675 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC4675 Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistor Original PDF
    2SC4675 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC4675 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC4675 Unknown Silicon NPN Transistor Scan PDF
    2SC4675 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC4675R Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistor Scan PDF
    2SC4675S Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistor Scan PDF
    2SC4675T Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistor Scan PDF

    2SC4675 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    EN3708

    Abstract: 2SC4675
    Text: Ordering number:EN3708 NPN Epitaxial Planar Silicon Transistor 2SC4675 20V/8A Switching Applications Features Package Dimensions • Adoption of MBIT process. · Low saturation voltage. · Fast switching speed. · Large current capacity. unit:mm 2042B [2SC4675]


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    EN3708 2SC4675 2042B 2SC4675] O-126ML EN3708 2SC4675 PDF

    2SC4675

    Abstract: ITR07418 ITR07419
    Text: Ordering number:ENN3708 NPN Epitaxial Planar Silicon Transistor 2SC4675 20V/8A Switching Applications Features Package Dimensions • Adoption of MBIT process. · Low saturation voltage. · High-speed switching. · Large current capacity. unit:mm 2042B [2SC4675]


    Original
    ENN3708 2SC4675 2042B 2SC4675] O-126ML 2SC4675 ITR07418 ITR07419 PDF

    2sc5694

    Abstract: TO-126LP 2sd1683 2SC5607 2sa1770 2SA2023 2SA2203 sanyo, 2sa2039 2sa2039 2SC5707
    Text: Low-Saturation Voltage Transistors Shortform Table Lead Type Package Series CONTENTS • ■ ■ ■ ■ ・ ・ ・ ・ ・ ・ ・ Packages Quick selection guide Road Map Application Example Lineup according to packages SPA NP NMP MP TP FLP


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    O-126 O-126ML O-126LP 2SB1165 2SD1722 2SB1166 2SD1723 2SB1167 2sc5694 TO-126LP 2sd1683 2SC5607 2sa1770 2SA2023 2SA2203 sanyo, 2sa2039 2sa2039 2SC5707 PDF

    2SC4675

    Abstract: YJ1000 EN3708 EN 3708
    Text: Ordering number: EN 3708 2SC4675 No.3708 NPN Epitaxial P lan ar Silicon Transistor 20V/8A Switching Applications Features • Adoption of MBIT process. • Low saturation voltage. • F ast switching speed. • Large current capacity. A b so lu te M axim um R a tin g s a t T a = 25°C


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    2SC4675 500mA 00W17 2SC4675 YJ1000 EN3708 EN 3708 PDF

    FR 3708

    Abstract: 2SC4675
    Text: O rd e rin g n u m b e r :EN 3 7 0 8 2SC4675 No.3708 NPN Epitaxial Planar Silicon Transistor I High-Current Switching Applications F eatures • Adoption of MB IT process. •Low saturation voltage. • Fast switching speed. • Large current capacity. unit


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    PDF

    2SB1205

    Abstract: 2SB1143 2sc4675
    Text: SAfÊYO LOW-SATURATI ON VOLTAGE TR SERI ES Small-Signal Transistors. NO. 2 (*)MBIT process technology "New manufacturing method,Multi Base Island Transistors” For PNP, (-) sign is omitted. *:Tc=25’C. #:Contains base to emitter resistance(RBE). Type No.


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    2SB764/2SD863 2SB892/2SD1207* 2SB927/2SD1247* 2SB985/2SD1347* 2SB1131* 2SD1145 2SA1641/2SC4306* 2SB1201/2SD1801* 2SB1202/2SD1802* 2SB1203/2SD1803* 2SB1205 2SB1143 2sc4675 PDF

    transistor 2SB1142

    Abstract: sanyo transistor tt series 2SB612K 2SB1143 2SA1750 2sc3788
    Text: SA0YO M IC A LE SS T 0-126M L T R A N SIST O R S F e a t u r e s ♦ Reduced cost and man-hour because of no insulator required for mounting ♦ Plastic-covered heat sink facilitating high-density mounting ♦ Increased collector dissipation when a transistor alone is operated


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    0-126M T0-126ML) T0-126ML O-126 MT950123TR transistor 2SB1142 sanyo transistor tt series 2SB612K 2SB1143 2SA1750 2sc3788 PDF

    2SB1267

    Abstract: No abstract text available
    Text: Continued from previous page Absolute maximum ratings Type No. Package type Electrical characteristics Ta = 25 "C VCB(sat) max @ 1C •IB Applications VCBO (V) VCEO to (V) (A) PC (W ) (2 ) VCE(sat) fr @ Vce hre @ V C E lC max (mV) 1C (A) (mA) te hFE XSF


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    2SC4727 2SC4728 2SC4729 2SD1235 T0220 2SDI236L 2SD1237L 2SA1469 2SB1267 PDF

    2SB1205

    Abstract: 2SD1801
    Text: SAfiYO L O W - S A T U R A T IO N V O L T A G E TR S E R I E S Small-Signal Transistors.NO. 1 The low-saturation voltage TR series, being excellent in VCE(sat) and switching characteristic at high current, are suited for use in inverters, converters, power amplifiers, electrical equipment.


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    T0-126LP MT95C123TR 2SB1205 2SD1801 PDF

    2SB1205

    Abstract: 2S81119 2Sk222 2sa128
    Text: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf


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    TQ220ML T0220ML T03PB 2SB1205 2S81119 2Sk222 2sa128 PDF

    2SC4614

    Abstract: 2SC4636 2SC4642 2SC4626 2SC4627 2SC4628 2SC4629 2SC4630 2SC4631 2SC4632
    Text: - 210 - *0 31 2SC4626 2SC4627 2SC4628 2SC4629 M M Ta=25'C, *E¡]/ÍTc=25cC ^ EB tt S n~l & Vc b o Vc e o (V) (V) Crne) T (A) Pc Pc* IcBO (W) (W) (juA) 0.03 0.125 30 20 20 0.015 0.125 20 20 0. 02 15 9 föT HF A 30 Hi Hi HF A HF A UHFAHF A (max) (rain) Vc b


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    2SC4626 2SC4627 2SC4628 2SC4629 2SC4630 2SC4631 2SC4632 2SC4633 2SC4650 2SC4655 2SC4614 2SC4636 2SC4642 PDF

    2SB612K

    Abstract: 2SA1380 2SC3503 2sc4675 transistor TO-126 Outline Dimensions 2SA1249 2sa1507 Sanyo Semiconductor 2sc3417
    Text: smvo MICALESS T0-126ML TRANSISTORS F e a t u r e s ♦ Reduced cost and man-hour because of no insulator required for mounting * Plastic-covered heat sink facilitating high-density mounting * Increased collector dissipation when a transistor alone is operated [T0-126ML:1. 3-1.51(18=25^)]


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    T0-126ML) T0-126ML O-126 2SD826 2SB559 2SD439 2SB632K 2SB612K 2SB986 2SD1348 2SA1380 2SC3503 2sc4675 transistor TO-126 Outline Dimensions 2SA1249 2sa1507 Sanyo Semiconductor 2sc3417 PDF

    2SB1267

    Abstract: No abstract text available
    Text: C o n tin u e d fro m p re v io u s p a g e Absolute maximum ratings Device Package type Electrical characteristics Ta = 25 °C VcHsat) max @ lc - I b ; Applications VcBO (V) VCEO (V) lc (A) Pc (W) Ti (°C) ; VcE(sat) max (mV) lc (A) Ib (mA) ! It @ VCE •te


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    2SB986 T0126 2SD1348 2SB1141 T0126ML 2SD1236L T0220 2SB921L 2SB1267 PDF