Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SC5337 Search Results

    SF Impression Pixel

    2SC5337 Price and Stock

    California Eastern Laboratories (CEL) 2SC5337-AZ

    RF TRANS NPN 15V SOT89
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SC5337-AZ
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Renesas Electronics Corporation 2SC5337-T1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2SC5337-T1 173 2
    • 1 -
    • 10 $1.82
    • 100 $1.3068
    • 1000 $1.3068
    • 10000 $1.3068
    		Buy Now
    Quest Components 2SC5337-T1 138
    • 1 $3.75
    • 10 $3.75
    • 100 $1.875
    • 1000 $1.75
    • 10000 $1.75
    		Buy Now
    Vyrian 2SC5337-T1 133
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    2SC5337 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC5337 NEC NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER Original PDF
    2SC5337 NEC Semiconductor Selection Guide Original PDF
    2SC5337 NEC NPN SILICON RF TRANSISTOR Original PDF
    2SC5337-AZ CEL Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - RF TRANSISTOR NPN SOT-89 Original PDF
    2SC5337QQ NEC NPN Silicon RF Transistor for High-frequency Low Distortion Amplifier 4-pin Power Minimold Original PDF
    2SC5337QQ-T1 NEC NPN Silicon RF Transistor for High-frequency Low Distortion Amplifier 4-pin Power Minimold Original PDF
    2SC5337QR NEC NPN Silicon RF Transistor for High-frequency Low Distortion Amplifier 4-pin Power Minimold Original PDF
    2SC5337QR-T1 NEC NPN Silicon RF Transistor for High-frequency Low Distortion Amplifier 4-pin Power Minimold Original PDF
    2SC5337QS NEC NPN Silicon RF Transistor for High-frequency Low Distortion Amplifier 4-pin Power Minimold Original PDF
    2SC5337QS-T1 NEC NPN Silicon RF Transistor for High-frequency Low Distortion Amplifier 4-pin Power Minimold Original PDF
    2SC5337-T1 NEC NPN SILICON RF TRANSISTOR Original PDF
    2SC5337-T1 NEC New power mini(a product with gain improved of 2SC4536) Original PDF

    2SC5337 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC4536

    Abstract: 2SC5337 2SC5337-T1 105dBuV P1093
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5337 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz


    Original     		2SC5337 2SC4536 2SC5337-T1 2SC4536 2SC5337 2SC5337-T1 105dBuV P1093 PDF

    nec 2561

    Abstract: NEC 2561 transistor 2561 nec 2561 a nec NEC semiconductor 2561 transistor NEC 2561 P1093 100MHZ 200MHZ 2SC3356
    Text: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SC5337 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to


    Original     		2SC5337 2SC5337 2SC3356 nec 2561 NEC 2561 transistor 2561 nec 2561 a nec NEC semiconductor 2561 transistor NEC 2561 P1093 100MHZ 200MHZ 2SC3356 PDF

    transistor s2p

    Abstract: 2SC4536 2SB804-AUT1-AZ
    Text: A Business Partner of Renesas Electronics Corporation. Preliminary 2SC5337 Data Sheet NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold R09DS0047EJ0300 Rev.3.00 Sep 14, 2012 FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA


    Original     		2SC5337 R09DS0047EJ0300 2SC4536 2SC5337 2SC5337-T1 2SC5337-AZ 2SC5337-T1-AZ transistor s2p 2SB804-AUT1-AZ PDF

    2SC4536

    Abstract: No abstract text available
    Text: Preliminary Data Sheet 2SC5337 R09DS0047EJ0300 Rev.3.00 Sep 14, 2012 NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise


    Original     		2SC5337 2SC4536 R09DS0047EJ0300 2SC5337 2SC5337-T1 2SC5337-AZ 2SC5337-T1-AZ PDF

    Nec K 872

    Abstract: 574 nec nec 4312 nec 8681 2sc3356 1685 transistor 2SC5337 2SC5337-T1 a 1232 nec TRANSISTOR 2sc3356
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5337 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 10 mA, f = 500 MHz


    Original     		2SC5337 2SC3356 2SC5337-T1 Nec K 872 574 nec nec 4312 nec 8681 2sc3356 1685 transistor 2SC5337 2SC5337-T1 a 1232 nec TRANSISTOR 2sc3356 PDF

    NE461M02

    Abstract: 2SC5337 NE461M02-T1 S21E npn 1349
    Text: NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 HIGH COLLECTOR CURRENT: 250 mA MAX NEW HIGH GAIN POWER MINI-MOLD PACKAGE SOT-89 TYPE HIGH OUTPUT POWER AT 1 dB COMPRESSION: 27 dBm TYP at 1 GHz


    Original     		OT-89 NE461M02 NE461M02 24-Hour 2SC5337 NE461M02-T1 S21E npn 1349 PDF

    mobile phone basic block diagram

    Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT PDF

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic PDF

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 PDF

    2SK2396

    Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
    Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数


    Original     		X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711 PDF

    uPD16305

    Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
    Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.


    Original     		PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943 PDF

    nf025

    Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
    Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920


    Original     		X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408 PDF

    2SC4536

    Abstract: 2SC5337 2SC5337-T1 nec 4312
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    transistor 224-1 base collector emitter

    Abstract: transistor 0588
    Text: SILICON TRANSISTOR NE461M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C DESCRIPTION 0.42 ±0.06 0.42 ±0.06 0.25±0.02 3.0 PIN CONNECTIONS E: Emitter C: Collector


    Original     		NE461M02 OT-89 NE461M02 24-Hour transistor 224-1 base collector emitter transistor 0588 PDF

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


    Original     		2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404 PDF

    NE461M02

    Abstract: NE461M02-T1-AZ 2SC5337 S21E
    Text: NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 HIGH COLLECTOR CURRENT: 250 mA MAX NEW HIGH GAIN POWER MINI-MOLD PACKAGE SOT-89 TYPE HIGH OUTPUT POWER AT 1 dB COMPRESSION: 27 dBm TYP at 1 GHz


    Original     		OT-89 NE461M02 NE461M02 NE461M02-T1-AZ 2SC5337 S21E PDF

    transistor marking T79 ghz

    Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
    Text: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority


    Original     		PU10015EJ04V0PF transistor marking T79 ghz marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book PDF

    2SC4536

    Abstract: 2SC5337 2SC5337-T1 ic 5209
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		2SC5337 2SC4536 2SC5337-T1 P10939JJ2V0DS 2SC4536 2SC5337 2SC5337-T1 ic 5209 PDF

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


    Original     		P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817 PDF

    2SC5743

    Abstract: 2SC5600 2SC5533 2SC5693 2SC5678 2sc5744 2SC4091 2SC5937 2sc5747 2sc2570
    Text: 高周波半導体デバイス Microwave Semiconductor Devices W-CDMA用IC（ICs for W-CDMA） ・W-CDMA用にシリコン／GaAs MMICを開発中 ・小型ミニモールドやリードレスQFNなど実装面積の削減に有効なパッケージに搭載


    Original     		PC8190/8191KRX-IF PC8194/8195KRX-IF PG2124TH 10TSSOP 10-pin FAX044435-9608 2SC5743 2SC5600 2SC5533 2SC5693 2SC5678 2sc5744 2SC4091 2SC5937 2sc5747 2sc2570 PDF

    uPD72002-11

    Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
    Text: 品名別検索 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して， 検索 F を クリックしてください。


    Original     		PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD72002-11 uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508 PDF

    ic isl 887

    Abstract: 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03
    Text: RF & マイクロ波デバイス システムブロック www.renesas.com 2010.04 目 次 1. はじめに •··········································································································································· 3


    Original     		PA86x PG2158T5K PC3218T5Y NES1823M-45, NES1823M-180, NES1823M-240, NES1823S-45, NES1823S-90 R09CA0001JJ0100 PX10020JJ42V0PF ic isl 887 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03 PDF

    NEC 2561

    Abstract: NEC 2561 transistor 2561 nec transistor NEC 2561 NEC 2561 h NEC D 809 F 2561 a nec NEC semiconductor 2561 nec 2561 4 pin transistor NEC D 586
    Text: PRELIMINARY DATA SHEET Silicon Transistor 2SC5337 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to UHF band, which is suitable for the CATV, tele-communication, and such.


    OCR Scan     		2SC5337 2SC5337 2SC3356 NEC 2561 NEC 2561 transistor 2561 nec transistor NEC 2561 NEC 2561 h NEC D 809 F 2561 a nec NEC semiconductor 2561 nec 2561 4 pin transistor NEC D 586 PDF

    SOT89 Z100

    Abstract: nec 8681 NPN transistor 1815 NE461M02 2sC5337
    Text: NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • • • NE461M02 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M02 HIGH COLLECTOR CURRENT: 250 mA MAX NEW HIGH GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE) HIGH OUTPUT POWER AT 1 dB COMPRESSION:


    OCR Scan     		OT-89 NE461M02 NE461M02 SOT89 Z100 nec 8681 NPN transistor 1815 2sC5337 PDF