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    Toshiba America Electronic Components 2SC5358-O(Q)

    Trans GP BJT NPN 230V 15A 150000mW 3-Pin(3+Tab) TO-3PN Sack
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    2SC5358 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC5358 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-3P(N); Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor; Application Scope: output(100W); Part Number: 2SA1986 Original PDF
    2SC5358 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5358 Toshiba Silicon NPN triple diffused type transistor for power amplifier applications Scan PDF
    2SC5358 Toshiba TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Scan PDF
    2SC5358-O Toshiba 2SC5358 - TRANSISTOR 15 A, 230 V, NPN, Si, POWER TRANSISTOR, 2-16C1A, 3 PIN, BIP General Purpose Power Original PDF
    2SC5358-O(Q) Toshiba 2SC5358 - Trans GP BJT NPN 230V 15A 3-Pin(3+Tab) TO-3PN Original PDF
    2SC5358-R Toshiba 2SC5358 - TRANSISTOR 15 A, 230 V, NPN, Si, POWER TRANSISTOR, 2-16C1A, 3 PIN, BIP General Purpose Power Original PDF

    2SC5358 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1986

    Abstract: 2SC5358
    Text: JMnic Product Specification 2SA1986 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3P I package ・Complement to type 2SC5358 APPLICATIONS ・Power amplifier applications ・Recommend for 80W high fidelity audio frequency amplifier output stage


    Original     		PDF 2SA1986 2SC5358 -230V; 2SA1986 2SC5358

    2sc5358

    Abstract: 2SA1986
    Text: SavantIC Semiconductor Product Specification 2SC5358 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SA1986 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage


    Original     		PDF 2SC5358 2SA1986 2sc5358 2SA1986

    C5358

    Abstract: No abstract text available
    Text: 2SC5358 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Tc = 25°C


    Original     		PDF 2SC5358 2SA1986 2-16C1A C5358

    Untitled

    Abstract: No abstract text available
    Text: 2SA1986 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1986 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5358 • Recommended for 80-W high-fidelity audio frequency amplifier output stage


    Original     		PDF 2SA1986 2SC5358

    C5358

    Abstract: 2SC5358 2SA1986 2SC535
    Text: 2SC5358 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Maximum Ratings Tc = 25°C


    Original     		PDF 2SC5358 2SA1986 C5358 2SC5358 2SA1986 2SC535

    2SA1986

    Abstract: 2SC5358 EMIC
    Text: Inchange Semiconductor Product Specification 2SA1986 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3P I package ・Complement to type 2SC5358 APPLICATIONS ・Power amplifier applications ・Recommend for 80W high fidelity audio frequency amplifier output stage


    Original     		PDF 2SA1986 2SC5358 2SA1986 2SC5358 EMIC

    Untitled

    Abstract: No abstract text available
    Text: 2SC5358 東芝トランジスタ シリコンNPN三重拡散形 2SC5358 ○ 電力増幅用 単位: mm • 高耐圧です。: VCEO = 230 V • 2SA1986 とコンプリメンタリになります。 • 80 W ハイファイオーディオアンプ出力段に最適です。


    Original     		PDF 2SC5358 2SA1986

    2SA1986

    Abstract: 2sa198 2SC5358
    Text: SavantIC Semiconductor Product Specification 2SA1986 Silicon PNP Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SC5358 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage


    Original     		PDF 2SA1986 2SC5358 -230V; 2SA1986 2sa198 2SC5358

    2SA1986

    Abstract: 2SC5358
    Text: Product Specification www.jmnic.com 2SC5358 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3P I package ・Complement to type 2SA1986 APPLICATIONS ・Power amplifier applications ・Recommend for 80W high fidelity audio frequency amplifier output stage


    Original     		PDF 2SC5358 2SA1986 2SA1986 2SC5358

    Untitled

    Abstract: No abstract text available
    Text: 2SC5358 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2SC5358 2SA1986

    C5358

    Abstract: 2SA1986 2SC5358
    Text: 2SC5358 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Tc = 25°C


    Original     		PDF 2SC5358 2SA1986 C5358 2SA1986 2SC5358

    Untitled

    Abstract: No abstract text available
    Text: 2SA1986 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1986 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = −230 V min • Complementary to 2SC5358 • Recommended for 80-W high-fidelity audio frequency amplifier output stage


    Original     		PDF 2SA1986 2SC5358 2-16C1A

    A1986

    Abstract: 2SA1986 2SC5358
    Text: 2SA1986 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1986 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5358 • Recommended for 80-W high-fidelity audio frequency amplifier output stage


    Original     		PDF 2SA1986 2SC5358 A1986 2SA1986 2SC5358

    A1986

    Abstract: 2SA1986 2SC5358
    Text: 2SA1986 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1986 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5358 • Recommended for 80-W high-fidelity audio frequency amplifier output stage


    Original     		PDF 2SA1986 2SC5358 A1986 2SA1986 2SC5358

    C5358

    Abstract: No abstract text available
    Text: 2SC5358 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2SC5358 2SA1986 2-16C1A C5358

    2SA1986

    Abstract: 2SC5358
    Text: TOSHIBA 2SC5358 TOSHIBA TRANSISTOR 2SC5358 POWER AMPLIFIER APPLICATIONS • • SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 MAX. '— Complementary to 2SA1986 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. 03.2 ± 0 .2 % 2 ,0± 0.3


    OCR Scan     		PDF 2SC5358 2SA1986 I--2--31 2SA1986 2SC5358

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA 2SC5358 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5358 Unit in mm 1 5.9 MAX. • • 03.2 ±0.2 Complementary to 2SA1986 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C


    OCR Scan     		PDF 2SC5358 2SA1986

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5358 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5358 Unit in mm 1 5.9 M A X^ . • • 0 3 .2 ± 0 .2 Complementary to 2SA1986 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C


    OCR Scan     		PDF 2SC5358 2SA1986 2-16C1A

    2SA1986

    Abstract: 2SC5358
    Text: 2SA1986 TO SH IBA 2 S A 1 986 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm • Complementary to 2SC5358 • Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Tc = 25°C


    OCR Scan     		PDF 2SA1986 2SC5358 2SA1986 2SC5358

    2SA1986

    Abstract: 2SC5358
    Text: TO SH IBA 2SC5358 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5358 Unit in mm 1 5.9 MAX. • • 03.2 ±0.2 Complementary to 2SA1986 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Tc = 25°C


    OCR Scan     		PDF 2SC5358 2SA1986 2SA1986 2SC5358

    ta 80w

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1986 2 SA 1 9 8 6 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 15.9 MAX. • Com plem entary to 2SC5358 • Recommend for 80W High Fidelity Audio Frequency Amplifier 03.2 ±0.2 Output St£lg6. 2.0±0.3


    OCR Scan     		PDF 2SA1986 2SC5358 ta 80w

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SA1986 TO SHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S A 1 986 Unit in mm POWER AMPLIFIER APPLICATIONS 1 5.9 M A X ^ . • Complementary to 2SC5358 • Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. 03.2 ± 0 .2


    OCR Scan     		PDF 2SA1986 2SC5358

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5358 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 3 58 PO W ER AM PLIFIER APPLICATIONS U n it in mm 15.9 MAX. 03.2 ± 0.2 C o m p le m e n ta ry to 2SA 1986 É0 Recommend for 80W H ig h F id e lity Audio Frequency A m p lifier O n fc r m t S fa c rp


    OCR Scan     		PDF 2SC5358 MAX300

    2SC5358

    Abstract: 2SA1986
    Text: 2SA1986 TOSHIBA 2 S A 1 986 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 MAX. '— • Complementary to 2SC5358 • Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. % 2 ,0± 0.3 MAXIMUM RATINGS Ta = 25°C


    OCR Scan     		PDF 2SA1986 2SC5358 2SC5358 2SA1986