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    Panasonic Electronic Components 2SC5520Q

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    Panasonic Electronic Components 2SC5521

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    2SC552 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC552 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC552 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC552 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC552 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC552 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC552 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC552 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC552 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC552 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC552 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC5520 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5521 Panasonic Horizontal Deflection Transistor Series for TV Original PDF
    2SC5521 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5522 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5523 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5524 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5525 ROHM High-speed Switching Transistor (60V, 5A) Original PDF
    2SC5525 ROHM High-speed Switching Transistor (60V, 5A) Scan PDF
    2SC5526 ROHM High-speed Switching Transistor (60V, 12A) Original PDF
    2SC5526 ROHM High-speed Switching Transistor (60V, 12A) Scan PDF

    2SC552 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA2007

    Abstract: 2SC5526
    Text: 2SC5526 Transistors High-speed Switching Transistor 60V, 12A 2SC5526 !External dimensions (Units: mm) !Features 1) Low saturation voltage. (Typ. VCE(sat) = 0.15V at IC / IB = 6A / 0.3A) 2) High switching speed. (Typ. tf = 0.1µs at Ic = 6A) 3) Wide SOA. (safe operating area)


    Original     		PDF 2SC5526 2SA2007. O-220FN 30MHz 2SA2007 2SC5526

    2SC5103

    Abstract: 2SC5525 2SA2006 2sa200 2SA1952
    Text: 2SC5103 / 2SC5525 Transistors High-speed Switching Transistor 60V, 5A 2SC5103 / 2SC5525 !Features 1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A) 2) High speed switching (tf : Typ. 0.1 µs at IC = 3A) 3) Wide SOA. (safe operating area) 4) Complements the 2SA1952 / 2SA2006.


    Original     		PDF 2SC5103 2SC5525 2SA1952 2SA2006. 100ms 2SC5103 2SC5525 2SA2006 2sa200

    2SA2007

    Abstract: 2SC552 2SC5526
    Text: 2SC5526 Transistors High-speed Switching Transistor 60V, 12A 2SC5526 !External dimensions (Units: mm) !Features 1) Low saturation voltage, typically VCE(sat) = 0.15V at IC / IB = 6A / 0.3A. 2) High switching speed, typically tf = 0.1µs at Ic =6A. 3) Wide SOA. (safe operating area)


    Original     		PDF 2SC5526 2SA2007. O-220FN 100ms 30MHz 2SA2007 2SC552 2SC5526

    2SA2006

    Abstract: 2SA1952 2SA1906 2SC5103 2SC5525 SC-83A
    Text: 2SA1952 / 2SA1906 / 2SA2006 Transistors High-speed Switching Transistor −60V, −5A 2SA1952 / 2SA1906 / 2SA2006 !External dimensions (Units : mm) !Features 1) High speed switching. (tf : Typ. 0.15 µs at IC = −3A) 2) Low VCE(sat). (Typ. −0.2V at IC / IB = −3 / −0.15A)


    Original     		PDF 2SA1952 2SA1906 2SA2006 2SC5103 2SC5525. SC-83A 2SA2006 2SC5525 SC-83A

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    2SC557

    Abstract: 2SC548 kt200 2sc431 2SC403A 2SC546 2sc516 2SC402 2SC556 2sc500
    Text: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic (V) (V) Pc (mA) (mW) 2SC401 2SC402 2SC402A 2SC403 2SC403A 50 50 50 50 50 5 100 100 100 100 100 100 100 180 100 180 2SC403B 50 4 100 320 2SC403C 60 4 100 320 2SC404 2SC405 2SC406 50 25 25 3 50 15 200


    Original     		PDF 2SC401 2SC402 2SC402A 2SC403 2SC403A 2SC403B 2SC403C 2SC404 2SC405 2SC406 2SC557 2SC548 kt200 2sc431 2SC403A 2SC546 2sc516 2SC402 2SC556 2sc500

    mg75n2ys40

    Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
    Text: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種


    Original     		PDF 02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055 02CZ5 1S2095A 2N3713 02Z24A1M mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A

    2SC5521

    Abstract: 2SC5522 2SC5584 2sc5524 2SC5517 2SC5516 2SC5516 equivalent 2sc5572 2SC5622 2SC5546
    Text: New Horizontal Deflection Transistor Series for TV • Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safeoperation, despite an absolutely minimal chip area which allows very compact package configuration. These advanced


    Original     		PDF 500V/1600V/1700V/1800V/2000V 2SC5521 2SC5522 2SC5584 2sc5524 2SC5517 2SC5516 2SC5516 equivalent 2sc5572 2SC5622 2SC5546

    2SC5526

    Abstract: No abstract text available
    Text: 2SA2007 Transistors High-speed Switching Transistor −60V,−12A 2SA2007 !External dimensions (Units : mm) !Features 1) High switching speed. (Typ. tf = 0.15µs at Ic = −6A) 2) Low saturation voltage. (Typ. VCE(sat) = −0.2V at IC / IB = −6A / −0.3A)


    Original     		PDF 2SA2007 2SC5526. O-220FN 2SC5526

    mg75n2ys40

    Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
    Text: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A

    2SC5525

    Abstract: 2SC5103 2SA1952 2SC51 2sa200 2SA2006
    Text: 2SC5103 / 2SC5525 Transistors High-speed Switching Transistor 60V, 5A 2SC5103 / 2SC5525 •Features 1) Low VcE(sat) (Typ. 0.15V at Ic / Ib = •External dimensions (Units: mm) 3 / 0.1 5A) 2) High speed switching (tf: Typ. 0.1 (os at Ic = 3A) 3) Wide SOA. (safe operating area)


    OCR Scan     		PDF 2SC5103 2SC5525 2SC510312SC5525 2SA195212SA2006. 2SC5103 100ms 2SC51 30MHz 2SC5525 2SA1952 2sa200 2SA2006

    SWITCHING TRANSISTOR 60V

    Abstract: 2SC5526 6a10 6A10 DC 2SA2007 TO-220FN
    Text: 2SC5526 Transistors High-speed Switching Transistor 60V, 12A 2SC5526 •External dimensions (Units: mm) •Features 1) Low saturation voltage, typically VcE<sat)=0.15V at Ic / Ib = 6A / 0.3A. 2) High switching speed, typically tf=0.1 (is at Ic =6A. 3) Wide SOA. (safe operating area)


    OCR Scan     		PDF 2SC5526 2SA2007. O-220FN 30MHz 0Q2M43S SWITCHING TRANSISTOR 60V 2SC5526 6a10 6A10 DC 2SA2007 TO-220FN

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1

    2SC5526

    Abstract: SWITCHING TRANSISTOR 60V 2SA2007 transistor A6A
    Text: 2SA2007 High-speed Switching Transistor -60V-12A 2SA2007 •External dimensions (Units : mm) •Features 1) High switching speed. (Typ. tf=0.15,us at Ic= -6A) 2) Low saturation voltage. (Typ. VcE(sat)= -0 .2 V at Ic / Ib = -6 A / -0.3A )


    OCR Scan     		PDF 2SA2007 -60V-12A) 2SC5526. O-220FN 30MHz O-22QFN 2SC5526 SWITCHING TRANSISTOR 60V 2SA2007 transistor A6A

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


    OCR Scan     		PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr

    2sd155

    Abstract: SN232 BLY92 2SD154 BD109 BLY88 TIP27 MD17A X51c stc1201
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors kI B H H LINE No. TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT


    OCR Scan     		PDF NPN110. BLY88 BLY92 700MI 500MI MT72C BUY43 MHT5901 MHT5902 10On0 2sd155 SN232 BLY92 2SD154 BD109 TIP27 MD17A X51c stc1201

    BD264

    Abstract: TIP27 BD109 S1050 BD263 BD264A BLY88 BLY92 S708 transistor BD400
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX PcT6TT ABSOiLOTE MAX. RATIINGS Ä25C


    OCR Scan     		PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    2SC5553 transistor

    Abstract: transistor 3E TO36 2sc5522 M.P Diode
    Text: Horizontal Deflection Transistor Series for TV • Overview B ased on accum ulated m anufacturing technology, these horizontal deflection transistors for TVs offer high perform ance and com pact design. T hey can also w ithstand high voltage and m aintain low loss. T hey also have a broad area o f safeoperation, despite an absolutely m inim al chip area which allow s very com pact package configuration. These advanced


    OCR Scan     		PDF 500V/1600V/1700V/1800V 2SC5572 2SC5518/2SC5523 5517/2SC5522 2SC5519/2SC5524 2SC5516/2SC 2SC5553 transistor transistor 3E TO36 2sc5522 M.P Diode

    transistor 2SC114

    Abstract: transistor BD400 BD109 2SC114 transistor transistor t08 usaf516es047m 2SC114 2SD155 L transistor 2Sd154 usaf517es060m
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. t * - k IB H H TYPE No. MAX. 1 hFE II MIN. MAX PcT6TT ABSOiLOTE MAX. RATIINGS Ä25C


    OCR Scan     		PDF NPN110. PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 transistor 2SC114 transistor BD400 BD109 2SC114 transistor transistor t08 usaf516es047m 2SC114 2SD155 L transistor 2Sd154 usaf517es060m

    3182N

    Abstract: 2sd4242 b1375 A1015 2482S 2sc 1091 1S1658 1S2452 2Sc2074 C1172B
    Text: • TO BE DISCONTINUED T Y P E L IS T 1 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e N o. 0 4 A Z 2 .0 —3.6 0 2 C Z 2 .0 -3 .6 2SC 512 2SC 3421 2SC 2754 - 0 5 A Z 2 .2 - 3 .6


    OCR Scan     		PDF 2SC387A 2SC1815 2SC2347 T2456 2460B 2SC2461 2461B 2SC2481 2SC2531 2SC3281 3182N 2sd4242 b1375 A1015 2482S 2sc 1091 1S1658 1S2452 2Sc2074 C1172B

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931