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    2SC587 Price and Stock

    ROHM Semiconductor 2SC5876U3HZGT106Q

    TRANS NPN 60V 0.5A UMT3
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    ROHM Semiconductor 2SC5876T106Q

    TRANS NPN 60V 0.5A UMT3
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    ROHM Semiconductor 2SC5876T106R

    TRANS NPN 60V 0.5A UMT3
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    ROHM Semiconductor 2SC5876U3T106

    Transistor GP BJT NPN 60V 500mA 3-Pin SOT-323 T/R - Tape and Reel (Alt: 2SC5876U3T106)
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    ROHM Semiconductor 2SC5876U3T106Q

    Transistor, Npn, 60V, 0.5A, Sot-323; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:60V; Transition Frequency Ft:300Mhz; Power Dissipation Pd:200Mw; Dc Collector Current:500Ma; Dc Current Gain Hfe:120Hfe; Transistor Caserohs Compliant: Yes |Rohm 2SC5876U3T106Q
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    Find more 2SC587 price and stock on Findchips.com

    2SC587 Datasheets (42)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC587 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC587 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC587 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC587 Unknown Cross Reference Datasheet Scan PDF
    2SC587 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC587 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC587 Unknown Vintage Transistor Datasheets Scan PDF
    2SC587 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC587 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC587 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC5873S ROHM Medium power transistor (30V, 0.5A) Original PDF
    2SC5874S ROHM Medium power transistor (30V, 1.0A) Original PDF
    2SC5874STPR ROHM Medium Power Transistor (30 V, 1.0 A) Original PDF
    2SC5875 ROHM Power transistor (30V, 2A) Original PDF
    2SC5875TV2Q ROHM Power Transistor (30 V, 2 A) Original PDF
    2SC5875TV2R ROHM Power Transistor (30 V, 2 A) Original PDF
    2SC5876 ROHM Medium power transistor (60V, 0.5A) Original PDF
    2SC5876 ROHM Medium power transistor (60V, 0.5A) Original PDF
    2SC5876T106Q ROHM Medium Power Transistor (60 V, 0.5 A) Original PDF
    2SC5876T106Q ROHM TRANS NPN 60V 0.5A SOT-323 Original PDF

    2SC587 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA2088

    Abstract: 2SC5876 T106
    Text: Medium power transistor 60V, 0.5A 2SC5876 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)


    Original     		PDF 2SC5876 500mA) 150mV 100mA, 2SA2088 R1120A 2SA2088 2SC5876 T106

    Untitled

    Abstract: No abstract text available
    Text: Medium power transistor 60V, 0.5A AEC-Q101 Qualified 2SC5876FRA 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)


    Original     		PDF AEC-Q101 2SC5876FRA 500mA) 150mV 100mA, 2SA2088FRA 2SA2088 R1120A

    C5875

    Abstract: 2SA2087 2SC5875
    Text: 2SC5875 Transistors Power transistor 30V, 2A 2SC5875 !External dimensions (Unit : mm) !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and


    Original     		PDF 2SC5875 200mV 2SA2087 65Max. C5875 C5875 2SA2087 2SC5875

    Untitled

    Abstract: No abstract text available
    Text: Medium power transistor 60V, 0.5A 2SC5876 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)


    Original     		PDF 2SC5876 500mA) 150mV 100mA, 2SA2088 R1120A

    2SA2085S

    Abstract: 2SC5873S
    Text: 2SC5873S Transistors Medium power transistor 30V, 0.5A 2SC5873S zExternal dimensions (Unit : mm) zFeatures 1) High speed switching. (Tf : Typ. : 50ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and


    Original     		PDF 2SC5873S 500mA) 150mV 100mA, 2SA2085S 15min. C5873S 2SA2085S 2SC5873S

    2SA2089S

    Abstract: 2SC5877S C5877
    Text: 2SC5877S Transistors Power transistor 60V, 0.5A 2SC5877S !External dimensions (Unit : mm) !Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and


    Original     		PDF 2SC5877S 500mA) 150mV 100mA, 2SA2089S 15Min. C5877S 2SA2089S 2SC5877S C5877

    Untitled

    Abstract: No abstract text available
    Text: 2SC5873S Transistors Medium power transistor 30V, 0.5A 2SC5873S zExternal dimensions (Unit : mm) zFeatures 1) High speed switching. (Tf : Typ. : 50ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and


    Original     		PDF 2SC5873S 500mA) 150mV 100mA, 2SA2085S 15min. C5873S

    2SA2088

    Abstract: 2SC5876 T106
    Text: 2SC5876 Transistor Medium power transistor 60V, 0.5A 2SC5876 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 !External dimensions (Units : mm) !Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)


    Original     		PDF 2SC5876 500mA) 150mV 100mA, 2SA2088 2SA2088 2SC5876 T106

    2SC5876

    Abstract: 2SA2088 T106
    Text: 2SC5876 Transistor Medium power transistor 60V, 0.5A 2SC5876 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 !External dimensions (Units : mm) !Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)


    Original     		PDF 2SC5876 500mA) 150mV 100mA, 2SA2088 2SC5876 2SA2088 T106

    Untitled

    Abstract: No abstract text available
    Text: Medium power transistor 60V, 0.5A 2SC5876 2.0 1.3 0.9 (1) 0.3 (3) (2) UMT3 0.65 0.65 Dimensions (Unit : mm) 0.7 Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)


    Original     		PDF 2SC5876 500mA) 150mV 100mA, 2SA2088 R1120A

    equivalent ZO 607

    Abstract: 2sc5872 2SC5849 HTT1132E 702 smd transistor
    Text: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872


    Original     		PDF HTT1132E REJ03G0008-0100Z 2SC5872 2SC5849 equivalent ZO 607 2sc5872 2SC5849 HTT1132E 702 smd transistor

    2SA20

    Abstract: 2SA2086S 2SC5874S
    Text: 2SC5874S Transistors Medium power transistor 30V, 1.0A 2SC5874S !External dimensions (Unit : mm) !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 1.0A) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and


    Original     		PDF 2SC5874S 150mV 100mA) 2SA2086S 15min. C5874S 2SA20 2SA2086S 2SC5874S

    2sa2085

    Abstract: 2SA20 2SC5873S 2SC587 2sa2085S
    Text: 2SC5873S Transistors Medium power transistor 30V, 0.5A 2SC5873S zExternal dimensions (Unit : mm) zFeatures 1) High speed switching. (Tf : Typ. : 50ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and


    Original     		PDF 2SC5873S 500mA) 150mV 100mA, 2SA2085S 15min. C5873S 2sa2085 2SA20 2SC5873S 2SC587 2sa2085S

    2SA20

    Abstract: 2SA2089S 2SC5877S
    Text: 2SC5877S Transistors Power transistor 60V, 0.5A 2SC5877S !External dimensions (Unit : mm) !Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and


    Original     		PDF 2SC5877S 500mA) 150mV 100mA, 2SA2089S 15Min. C5877S 2SA20 2SA2089S 2SC5877S

    702 transistor smd code

    Abstract: HTT1132E 853 smd 6-pin 2SC5849 2SC5872 equivalent ZO 607 smd transistor 805 239 0532 smd transistor 718 transistor smd 661 752
    Text: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872


    Original     		PDF HTT1132E REJ03G0008-0100Z 2SC5872 2SC5849 702 transistor smd code HTT1132E 853 smd 6-pin 2SC5849 2SC5872 equivalent ZO 607 smd transistor 805 239 0532 smd transistor 718 transistor smd 661 752

    2SA2086S

    Abstract: 2SC5874S
    Text: 2SC5874S Transistors Medium power transistor 30V, 1.0A 2SC5874S !External dimensions (Unit : mm) !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 1.0A) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and


    Original     		PDF 2SC5874S 150mV 100mA) 2SA2086S 15min. C5874S 2SA2086S 2SC5874S

    C5875

    Abstract: 2SA20 2SA2087 2SC5875
    Text: 2SC5875 Transistors Power transistor 30V, 2A 2SC5875 !External dimensions (Unit : mm) !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and


    Original     		PDF 2SC5875 200mV 2SA2087 65Max. C5875 C5875 2SA20 2SA2087 2SC5875

    Diode 1588

    Abstract: Q2SC5876 2SC5876
    Text: SPICE PARAMETER 2SC5876 by ROHM TR Div. * 2SC5876 NPN BJT model * Date: 2006/11/13 .MODEL 2SC5876 NPN + IS=120.00E-15 + BF=307.96 + VAF=100 + IKF=.76113 + ISE=120.00E-15 + NE=1.3985 + BR=6.1588 + VAR=100 + IKR=4.8827 + ISC=2.8942E-12 + NC=1.3100 + NK=.76124


    Original     		PDF 2SC5876 Q2SC5876 00E-15 8942E-12 521E-3 151E-12 141E-12 75E-12 Diode 1588 2SC5876

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SA2089S

    Abstract: 2SC5877S SC-72
    Text: 2SA2089S Transistors Medium power transistor −60V, −0.5A 2SA2089S !External dimensions (Unit : mm) SPT (SC-72) 2.0 3Min. 3.0 4.0 (15Min.) !Features 1) High speed switching. (Tf : Typ. : 60ns at IC = −500mA) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −100mA, IB = −10mA)


    Original     		PDF 2SA2089S SC-72) 15Min. -500mA) -150mV -100mA, -10mA) 2SC5877S A2089S 2SA2089S 2SC5877S SC-72

    2SA20

    Abstract: 2SA2086S 2SC5874S
    Text: 2SA2086S Transistors Medium power transistor −30V, −1A 2SA2086S !External dimensions (Unit : mm) 4.0 2.0 3Min. 3.0 SPT (15Min.) !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −1A) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −1.0A, IB = −100mA)


    Original     		PDF 2SA2086S 15Min. -150mV -100mA) 2SC5874S A2086S 2SA20 2SA2086S 2SC5874S

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    SC522-M

    Abstract: 60407 2SC520A 2SA499-M sc522 2SC512M 2SC519A m50801 SA512 2SC520A-M
    Text: 1 .R lrfr O * » » * * ft VcBO m % # m % * m it m % VcEO % « V kbo T a = 25’C ) le Pc & Inui T, MAX (T c= 2512) MIN TYP VCR (V ) MS0801-60403 2 SA499-M F N P M S080I-60403 2SA50Ö-M I 'N P MS0902—60581 2 S A 503-M P N P M S0902—60582 2 S A 5 1 0 -M


    OCR Scan     		PDF MS0801-60403 2SA499-M MSOeOI-60403 MS0902 SA503â SA510-M MS0902 SA512-M SC522-M 60407 2SC520A sc522 2SC512M 2SC519A m50801 SA512 2SC520A-M