Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SD1355 Search Results

    2SD1355 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1355 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1355 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1355 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD1355 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1355 Unknown Cross Reference Datasheet Scan PDF
    2SD1355 Toshiba Silicon NPN Triple Diffused Type Transistor Scan PDF
    2SD1355-O Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD1355-R Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD1355-Y Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    2SD1355 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SB995

    Abstract: 2SD1355
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB995 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·Low Collector Saturation Voltage: VCE(sat)= -2.0V(Max)@ IC= -4A ·Complement to Type 2SD1355


    Original     		2SB995 -100V 2SD1355 -100V; 2SB995 2SD1355 PDF

    2SD1388

    Abstract: 2SD1387 2SD1370 2SD1369 2SD1307 2SD1331 2SD1360 2SD1346 2SD1333 2SD1371
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 45W 2SD1301 1500 5 2A 130 3-12 10 1A (Tc=25ºC) 2SD1302 25


    Original     		2SD1301 2SD1302 2SD1303 2SD1304 2SD1305 2SD1306 2SD1307 2SD1308 2SD1309 2SD1310 2SD1388 2SD1387 2SD1370 2SD1369 2SD1307 2SD1331 2SD1360 2SD1346 2SD1333 2SD1371 PDF

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40 PDF

    mg75n2ys40

    Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
    Text: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種


    Original     		02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055 02CZ5 1S2095A 2N3713 02Z24A1M mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A PDF

    mg75n2ys40

    Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
    Text: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A PDF

    2SB5950

    Abstract: 2SD5250 2SB616 NEC 2SD586 to-53 2SC940 NEC 2sb616 2SB595Y 2SB616 2SD586 2SD52
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO (A) (V) PD Max hFE *T ON) Min (Hz) 'CBO t0N r (CE)sat Toper Max Max (A) (s) Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . -10 . . .15


    Original     		SDT6316 SDT6416 SML1643 SML1653 2SB747 2N1211 2N1617 2SB5950 2SD5250 2SB616 NEC 2SD586 to-53 2SC940 NEC 2sb616 2SB595Y 2SB616 2SD586 2SD52 PDF

    STRS6307

    Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
    Text: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173


    Original     		2N3054 2N32741 2N4240 2N4908 2N3054A 2N3766 2N4273 2N4909 2N3055 2N3767 STRS6307 STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020 PDF

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


    OCR Scan     		2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1 PDF

    2SK 150A

    Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
    Text: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015


    OCR Scan     		2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2SK 150A mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N PDF

    2SB995

    Abstract: tosh1ba 30WHigh
    Text: T O S H I B A -CDISCRETE/OPTO} 9097250 TOSHIBA ^ T G T 7 E S D 0007=125 C D ISCRETE/OPTO SILICON NPN TRIPLE DÌFFUSED TYPE . V- POWER AMPLIFIER APPLICATIONS. Unit in mm 1 0 .3 MAX FEATURES: 0a.z±az s?-. . High Breakdown Voltage : V qjjo=100V n . Low Collector Saturation Voltage : VcE sat):=2 .0V(Max.)


    OCR Scan     		T0T72S0 2SB995 30WHigh 2SB995 tosh1ba PDF

    Untitled

    Abstract: No abstract text available
    Text: jjF lT C m B S O ~5Í TOSHIBA { D IS CR ETE/ OP TO* QDD73Ö4 O / 9 0 9 7 2 50 T O S H I B A D I S C R E T E /OPTO 56C 07384 SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: . High Breakdown Voltage : Vq e o =~100V . Low Collector-Emitter Saturation Voltage


    OCR Scan     		QDD73 2SD1355 PDF

    2SB995

    Abstract: 2SD1355 a03 audio amplifier
    Text: jqY h IBA Tb {DISCRETE/OPTO! DE 1 =10^7550 □ □ □ 7 3 öM 0 / 9 0 9 7 2 50 T O S H I B A <D I S C R E T E / O P T O 5ò C 07 3 8 4 t>T"3B^9 S I LICON PNP T R IP L E D IF F U S E D T Y P E POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: . High Breakdown Voltage ; V c e O=~100V


    OCR Scan     		2SD1355 llttllllllLItllllllll111Illlllllllll 2SB995 2SD1355 a03 audio amplifier PDF