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    2SD1782 Price and Stock

    ROHM Semiconductor 2SD1782KT146R

    TRANS NPN 80V 0.5A SMT3
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    Verical 2SD1782KT146R 8,001 228
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    2SD1782KT146R 520
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    Ameya Holding Limited 2SD1782KT146R 100 1
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    New Advantage Corporation 2SD1782KT146R 6,000 1
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    ROHM Semiconductor 2SD1782KT146Q

    TRANS NPN 80V 0.5A SMT3
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    Verical 2SD1782KT146Q 422 269
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    2SD1782KT146Q 192 127
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    Quest Components 2SD1782KT146Q 9,760
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    TME 2SD1782KT146Q 1
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    Chip One Stop 2SD1782KT146Q Cut Tape 192
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    CoreStaff Co Ltd 2SD1782KT146Q 662
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    Micro Commercial Components 2SD1782HE3-R-TP

    TRANS NPN 80V 0.5A SOT-23
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    2SD1782HE3-R-TP Reel 3,000
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    ROHM Semiconductor 2SD1782KFRAT146Q

    Transistor, Aec-Q101, Npn, 80V, 0.5A; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:80V; Transition Frequency Ft:120Mhz; Power Dissipation Pd:200Mw; Dc Collector Current:500Ma; Dc Current Gain Hfe:120Hfe; Transistor Rohs Compliant: Yes |Rohm 2SD1782KFRAT146Q
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    Newark 2SD1782KFRAT146Q Cut Tape 1,941 5
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    ROHM Semiconductor 2SD1782K-T146Q

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    Bristol Electronics 2SD1782K-T146Q 2,910 8
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    Quest Components 2SD1782K-T146Q 2,328
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    2SD1782 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1782 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1782 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1782K Kexin Power Transistor Original PDF
    2SD1782K ROHM Power Transistor (80V, 0.5A) Original PDF
    2SD1782K TY Semiconductor Power Transistor - SOT-23 Original PDF
    2SD1782K Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1782K Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1782K Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1782K Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1782K ROHM EM3, UMT, SMT Transistors Scan PDF
    2SD1782K ROHM SOT-23, SOT-89 and D-Pak Transistors Scan PDF
    2SD1782KR ROHM Power Transistor (80V, 0.5A) Original PDF
    2SD1782KT146Q ROHM Power Transistor (80 V, 0.5 A) Original PDF
    2SD1782KT146Q ROHM TRANS NPN 80V 0.5A SOT-346 Original PDF
    2SD1782KT146R ROHM Power Transistor (80 V, 0.5 A) Original PDF
    2SD1782KT146R ROHM TRANS NPN 80V 0.5A SOT-346 Original PDF

    2SD1782 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    smd transistor marking AJ

    Abstract: transistor smd marking AJ SMD AJ AJ MARKING 2SD1782K aj smd transistor
    Text: Transistors IC SMD Type Power Transistor 2SD1782K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low VCE sat .VCE(sat) = 0.2V(Typ.) IC / IB= 0.5A / 50mA 0.4 3 1 0.55 High VCEO, VCEO=80V. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1


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    2SD1782K OT-23 500mA/50mA 100mA -50mA, 100MHz smd transistor marking AJ transistor smd marking AJ SMD AJ AJ MARKING 2SD1782K aj smd transistor PDF

    2SB1198K

    Abstract: 2SD1782K T146 2SD1782K ROHM low capacitance NPN transistor
    Text: 2SD1782K Transistors Power Transistor 80V, 0.5A 2SD1782K zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) =0.2V(Typ.) (IC / IB=0.5 A / 50mA) 2) High VCEO, VCEO=80V 3) Complements the 2SB1198K. 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1


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    2SD1782K 2SB1198K. SC-59 2SB1198K 2SD1782K T146 2SD1782K ROHM low capacitance NPN transistor PDF

    npn 222

    Abstract: high hfe transistor NPN Transistor Characteristics NPN Silicon Epitaxial Planar Transistor transistor equivalent book 2SD1782K hFE is transistor NPN Transistor on 222 transistor Silicon NPN Epitaxial Planar Power Transistor SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE
    Text: Transistors Power Transistor 80V, 0.5A 2SD1782K FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 0.5A / 50mA) 2) High VCEO, VCEO = 80V 3) Complements the 2SB1198K. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor


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    2SD1782K 2SB1198K. 96-222-D93) npn 222 high hfe transistor NPN Transistor Characteristics NPN Silicon Epitaxial Planar Transistor transistor equivalent book 2SD1782K hFE is transistor NPN Transistor on 222 transistor Silicon NPN Epitaxial Planar Power Transistor SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE PDF

    2SD1782K ROHM

    Abstract: No abstract text available
    Text: Transistors Power Transistor 80V, 0.5A 2SD1782K FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 0.5A / 50mA) 2) High VCEO, VCEO = 80V 3) Complements the 2SB1198K. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor


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    2SD1782K 2SB1198K. 96-222-D93) 2SD1782K ROHM PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1782 Preliminary NPN EPITAXIAL SILICON TRANSISTOR POWER NPN TRANSISTOR  DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high


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    2SD1782 2SD1782 2SD1782L-x-AE3-R 2SD1782G-x-AE3-R OT-23 OT-23 QW-R206-107 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD1782KFRA 2SD1782K Transistors AEC-Q101 Qualified Power Transistor 80V, 0.5A 2SD1782K 2SD1782KFRA zExternal dimensions (Unit : mm) 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (2) 0~0.1 2.8±0.2 (1) 1.6+0.2 −0.1 zFeatures 1) Low VCE(sat). VCE(sat) =0.2V(Typ.)


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    2SD1782KFRA 2SD1782K AEC-Q101 2SB1198KFRA 2SB1198K. SC-59 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD1782K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low VCE sat .VCE(sat) = 0.2V(Typ.) IC / IB= 0.5A / 50mA 0.4 3 1 0.55 High VCEO, VCEO=80V. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1


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    2SD1782K OT-23 500mA/50mA 100mA -50mA, 100MHz PDF

    sot akr

    Abstract: No abstract text available
    Text: 2SB1198K SOT-23-3L Transistor PNP SOT-23-3L 1. BASE 2. EMITTER 3. COLLECTOR 2.92 0.35 1.17 Features — — — 2.80 1.60 Low VCE(sat): VCE(sat)=-0.2V(Typ.)(IC=-0.5A,IB=-50mA) High breakdown voltage BVCEO=-80V Complements the 2SD1782K 0.15 1.90 Dimensions in inches and (millimeters)


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    2SB1198K OT-23-3L OT-23-3L -50mA) 2SD1782K -100mA -500mA, -50mA -50mA, 100MHz sot akr PDF

    20594

    Abstract: transistor bf 198 2SD1782K ROHM BY 198 DATASHEET transistor equivalent book 2SD1782K 2SD1782K TR1082
    Text: SPICE PARAMETER 2SD1782K by ROHM TR Div. * 2SD1782K NPN BJT model * Date: 2006/12/15 .MODEL 2SD1782K NPN + IS=250.00E-15 + BF=260.39 + VAF=100 + IKF=2 + ISE=250.00E-15 + NE=1.4602 + BR=34.771 + VAR=100 + IKR=1.9204 + ISC=32.139E-12 + NC=1.4582 + NK=.95449


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    2SD1782K Q2SD1782K 00E-15 139E-12 16E-12 788E-12 07E-12 22E-9 20594 transistor bf 198 2SD1782K ROHM BY 198 DATASHEET transistor equivalent book 2SD1782K 2SD1782K TR1082 PDF

    2SB1198K

    Abstract: 2SD1782K 2SD1782K ROHM
    Text: Transistors Low-frequency Transistor *80V, *0.5A 2SB1198K FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 3) Complements the 2SD1782K. FExternal dimensions (Unit:s mm) FStructure Epitaxial planar type


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    2SB1198K 2SD1782K. 96-136-B93) 2SB1198K 2SD1782K 2SD1782K ROHM PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors AEC-Q101 Qualified Low-frequency Transistor *80V, *0.5A 2SB1198KFRA 2SB1198K FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 2SD1782KFRA 3) Complements the 2SD1782K. FExternal dimensions (Unit:s mm)


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    AEC-Q101 2SB1198KFRA 2SB1198K 2SD1782KFRA 2SD1782K. 96-136-B93) PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1782 Preliminary NPN EPITAXIAL SILICON TRANSISTOR POWER NPN TRANSISTOR  DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high


    Original
    2SD1782 2SD1782 2SD1782G-x-AE3-R OT-23 QW-R206-107 PDF

    bvceo

    Abstract: 231 transistor 2SB1198K 2SD1782K
    Text: Transistors Low-frequency Transistor *80V, *0.5A 2SB1198K FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 3) Complements the 2SD1782K. FExternal dimensions (Unit:s mm) FStructure Epitaxial planar type


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    2SB1198K 2SD1782K. 96-136-B93) bvceo 231 transistor 2SB1198K 2SD1782K PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD1782K Transistors Power Transistor 80V, 0.5A 2SD1782K zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) =0.2V(Typ.) (IC / IB=0.5 A / 50mA) 2) High VCEO, VCEO=80V 3) Complements the 2SB1198K. 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1


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    2SD1782K 2SB1198K. SC-59 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors Low-frequency Transistor -80V, - 0.5A 2SB1198K •External dimensions (Unit:s mm) • F e a tu re s 1) LOW VcE(sat). VcE(sat) = — 0.2V (Typ.) ( I c / I b = -0.5A /-50m A ) 2) High breakdown voltage. B V ceo = — 8 0 V 3) Complements the 2SD1782K.


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    2SB1198K /-50m 2SD1782K. -100m PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors Power Transistor 80V, 0.5A 2SD1782K •F e a tu re s 1) External dimensions (Units: mm) LOW VcE(sat). VcE(sat) = 0.2V (Typ.) ( I c / I b = 0.5A/50mA) 2) High breakdown voltage. 2.9±0.2 1 1 + 0 -2 y -0.1 o.0 ±o.1 1.9±0.2 B V ceo = 8 0 V N ’»—


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    2SD1782K A/50mA) 2SB1198K. SC-59 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistor, NPN 2SD1782K Features • available in SMT3 SMT, SC-59 package • package marking: 2SD1782K; AJ-fr, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = 0.2 V at lc/lB =0.5 A/50 mA • high breakdown voltage BV qeo =


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    2SD1782K SC-59) 2SD1782K; 2SB1198K PDF

    2SD1796

    Abstract: SC64 2SB1204 2SD1802 2SD1771 2SD1771A 2SD1772 2SD1772A 2SD1808A 2SD1774
    Text: - 266 - Ta=25Tî, *EPfíTc=25<C M 2SD1771 2SD1771A 2SD1772 2SD1772A 2SD1773 2SD1774 2SD1774A 2SD1775 2SD1775A 2SD1776 2SD1776A 2SD1777 2SD1778 2SD1778A 2SD1779 2SD1780 2SD1781K 2SD1782K 2SD1783 2SD1784 ¿ÒUi föO 2SD1787 2SD1796 2SD1797 2SD1799 2SD1800


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    2SD1771 2SD1771A 2SD1772 2SD1772A 2SD1773 2SD1774 2SD1774A 2SD1796 SC-67 2SD1797 2SD1796 SC64 2SB1204 2SD1802 2SD1808A PDF

    2SD1782KI

    Abstract: No abstract text available
    Text: h7 > y 2SD1782K $ /Transistors i ti £ * y U -+ M NPN y y n > h 7 > v * 2 Epitaxial Planar NPN Silicon Transistor fêJS JgÆ :fri|liffl/L o w Freq. Power Amp. 2SD1782K 1i^-Jîi^jâO/Dimensions Unit : mm) Vce (sat)=0.2V (Typ.) 1. 9 ± 0 . 2 (lc /lB = 0 .5 A /5 0 m A )


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    2SD1782K 2SD1782K 2SB1198K SC-59 Ta-25 2SD1782KI PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors Power Transistor 80V, 0.5A 2SD1782K • F e a tu re s 1) • E x te rn a l dim ensions (Units: mm) L O W VcE(sat). VcE(sat) = 0.2V (Typ.) 2 .9 ± 0 .2 (Ic/ I b = 0.5A/50m A) 1 .9 ± 0 .2 •1+ 0.2 — 0.1 0 .8 ± 0.1 n 2) High breakdown voltage.


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    2SD1782K A/50m 2SB1198K. 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP. PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors Power Transistor 80V, 0.5A 2SD1782K •Features 1) •External dimensions (Units: mm) LOW VcE(sat). VcE(sat) = 0.2V (Typ.) (I / I = 0.5A/50mA) 2) High breakdown voltage, c 2 .9 ± 0.2 1 1+0.2 1;1—0.1 1.9 ± 0.2 b 0.8 ± 0 1 (DP B V ceo = 8 0 V


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    2SD1782K A/50mA) 2SB1198K. SC-59 PDF

    SC marking code NPN transistor

    Abstract: No abstract text available
    Text: 2SD1782K Transistor, NPN Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD1782K; A J *. where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = 0.2 V at lc/lB = 0.5 A/50 mA high breakdown voltage


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    2SD1782K SC-59) 2SD1782K; 2SB1198K 2SD1782K SC marking code NPN transistor PDF

    2sc3943

    Abstract: 2SC4117 2sc2060 2SC2553 2SC3170 2SC4258 2SC2242 2SC3536 4181A 2SC3039
    Text: - 184 - a « Type No. tt « Manuf. 2SC 4179 a a 2SC 4180 y s w 2SC 4181 m K ^ 2SC 4181A 2SC 4182 ^ H * SANYO 2SC4400 M TOSHIBA £ NEC B tL HITACHI V ± il F U J ITSU fô T MATSUSHITA 2SC4253 2SC3936 2SC4117 2SD1821 H £ MITSUBISHI 2SC4258 2SC3938 2SC4116


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    2SC4400 2SC4253 2SC3936 2SC4258 2SC4098 2SC4117 2SD1821 2SC4102 2SC4413 2SD1824 2sc3943 2SC4117 2sc2060 2SC2553 2SC3170 2SC2242 2SC3536 4181A 2SC3039 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1198K Transistor, PNP Features Dimensions Units: mm available in SMT3 (SMT, SC-59) package 2SB1198K (SMT3) 2.9 * 0-2 package marking: 2SB1198K; AK-*, where ★ is hFE code low collector saturation voltage, typically VCE(sat) = -0.2 V for Ic /Ib = -0.5 A/-50 mA


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    2SB1198K SC-59) 2SB1198K; 2SD1782K PDF