2SD205 Search Results

A 933 S transistors

Abstract: 2SB1361 2SD2052 IS020
Contextual Info: Power Transistors 2SD2052 2SD2052 Silicon Triple-Diffused Planar Type Package Dimensions High Powe< Amplifier Complementary Pair with 2SB1361 • Features Unit *. mm 5.2max. ' / 3.2 , 15.5max. , 6.9min. • V ery good lin earity o f DC c u r re n t gain hKF

2SD2052

Abstract: 2SD205 2SB1361
Contextual Info: Inchange Semiconductor Product Specification 2SD2052 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·Wide area of safe operation ·Complement to type 2SB1361 APPLICATIONS ·Optimum for the output stage of a HiFi audio amplifier PINNING PIN

294a

Abstract: 2SB1361 2SD2052
Contextual Info: Power T ransistors 2SB1361 2SB1361 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2052 • Features • V ery good linearity o f DC current gain I i f e • W ide area o f sa fety operation (ASO)

2SD2057

Abstract: rectifier 5A 1000V DIP
Contextual Info: Power Transistors 2SD2057 Silicon NPN triple diffusion planar type For horizontal deflection output Unit: mm ● ● ● φ3.2±0.1 2.0±0.2 Solder Dip ● Incorporating a built-in damper diode Reduction of a parts count and simplification of a circuit are allowed

2SB1361

Abstract: 2SD2052
Contextual Info: SavantIC Semiconductor Product Specification 2SB1361 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD2052 ·High transition frequency ·Wide area of safe operation APPLICATIONS ·For high power amplification PINNING

Contextual Info: Power Transistors 2SD2052 2SD2052 Silicon Triple-Diffused Planar Type Package Dimensions High Powe< Amplifier Complementary Pair with 2SB1361 • Features ro 4 - - Unit *. mm 5.2max. Ì/3 .2 6 . 9 m in . S r - Z L - k • V ery good linearity of DC c u rre n t gain hpF

Contextual Info: Power Transistors 2SB1362 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2053 Unit: mm 15.0±0.5 4.5±0.2 M Di ain sc te on na tin nc ue e/ d • Features Unit Collector to base voltage VCBO –150 V Collector to emitter voltage

Contextual Info: Power Transistors 2SD2051 Silicon NPN epitaxial planar type darlington Unit: mm 2.7±0.2 16.7±0.3 φ 3.1±0.1 Symbol Rating Unit Collector-base voltage Emitter open VCBO 60±10 V Collector-emitter voltage (Base open) VCEO 60±10 V Emitter-base voltage (Collector open)

Contextual Info: Power Transistors 2SD2057 Silicon NPN triple diffusion planar type For horizontal deflection output Unit: mm 15.0±0.3 11.0±0.2 5.0±0.2 3.2 M Di ain sc te on na tin nc ue e/ d 0.7 • Features ● ● ● 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 Solder Dip

2SD2053

Abstract: 2SB1362 ic 4001
Contextual Info: Power Transistors 2SD2053 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1362 M Di ain sc te on na tin nc ue e/ d Unit: mm 15.0±0.5 Symbol Ratings Unit 150 V 150 V Collector to base voltage VCBO VCEO Emitter to base voltage

2SD2051

Contextual Info: Power Transistors 2SD2051 Silicon NPN epitaxial planar type darlington Unit: mm 10.0±0.2 4.2±0.2 5.5±0.2 Collector-base voltage Emitter open Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current

2SB1367

Abstract: 2SD2059
Contextual Info: Inchange Semiconductor Product Specification 2SB1367 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2059 ・Low collector saturation voltage: VCE sat =-2.0V(Max) at IC=-4A,IB=-0.4A ・Collector power dissipation:

2SB1362

Abstract: 2SD2053
Contextual Info: Inchange Semiconductor Product Specification 2SD2053 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Wide area of safe operation ・Complement to type 2SB1362 APPLICATIONS ・For high power amplifier applications PINNING PIN DESCRIPTION

Contextual Info: Power Transistors 2SD2052 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1361 Unit: mm 15.0±0.3 11.0±0.2 ● ● • Absolute Maximum Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage

2SD2057

Contextual Info: SavantIC Semiconductor Product Specification 2SD2057 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·High voltage,high speed ·Built-in damper diode ·Wide area of safe operation APPLICATIONS ·Horizontal deflection output applications PINNING

2SB1366

Abstract: 2sd2058
Contextual Info: SavantIC Semiconductor Product Specification 2SB1366 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2058 ·Low collector saturation voltage: VCE SAT =-1.0V(Max) at IC=-2A,IB=-0.2A ·Collector power dissipation: PC=25W(TC=25 )

Contextual Info: Power Transistors 2SD2051 Silicon NPN epitaxial planar type darlington Unit: mm 2.7±0.2 φ 3.1±0.1 14.0±0.5 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur

Contextual Info: Power Transistors 2SD2052 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1361 M Di ain sc te on na tin nc ue e/ d Unit: mm ● ● • Absolute Maximum Ratings Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage

Contextual Info: Ordering number:EN2753C NPN Triple Diffused Planar Silicon Transistor 2SD2050 Driver Applications Applications Package Dimensions •M otor drivers, printer hamm er drivers, relay drivers, voltage regulator control. unit:mm 2049C [2SD2050] Features ■Suitable for sets w h ose height is restricted.

2SD2051

Contextual Info: Power Transistors 2SD2051 Silicon NPN epitaxial planar type Darlington For low-frequency amplification Unit: mm 0.7±0.1 • Absolute Maximum Ratings 16.7±0.3 TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 60±10 V Collector to emitter voltage

darlington power pack

Abstract: 2SD2051 1405Q
Contextual Info: Power Transistors 2SD2051 Silicon NPN epitaxial planar type Darlington For low-frequency amplification Unit: mm 0.7±0.1 • Absolute Maximum Ratings 16.7±0.3 TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 60±10 V Collector to emitter voltage

2SB1362

Abstract: 2SD2053
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1362 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD2053 APPLICATIONS ·Designed for high power amplifications.

2sb1367

Abstract: 2SD2059
Contextual Info: SavantIC Semiconductor Product Specification 2SB1367 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2059 ·Low collector saturation voltage: VCE sat =-2.0V(Max) at IC=-4A,IB=-0.4A ·Collector power dissipation: PC=30W(TC=25 )

2SD2050

Abstract: 2SD205
Contextual Info: Ordering number:EN2753C NPN Triple Diffused Planar Silicon Transistor 2SD2050 Driver Applications Applications Package Dimensions • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. unit:mm 2049C [2SD2050] Features 10.2 1.3