2SB1468

Contextual Info: Ordering number:EN3364 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1468/2SD2219 30V/8A High-Speed Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters, etc. unit:mm 2041A Features [2SB1468/2SD2219] · Micaless package facilitating mounting.

TO-92MOD

Abstract: 2SD2213
Contextual Info: 2SD2213 Silicon NPN Epitaxial Low Frequency Power Amplifier Features TO-92MOD • Large hFE at low current operation. 2000, at IC = 0.15A Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit ——————————————————————–

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216 Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SB1462 • Package • High forward current transfer ratio hFE

Contextual Info: Transistor 2SD2216J Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1462J Unit: mm 1.60±0.05 0.80 0.80±0.05 0.425 0.425 0.50 0.27±0.02 0.50 +0.05 1.00±0.05 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat .

Contextual Info: Transistor 2SD2216 Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1462 Unit: mm 0.2+0.1 –0.05 3 0.75±0.15 5˚ • Absolute Maximum Ratings Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage

VA MARKING

Contextual Info: Transistor 2SD2210 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1 0.4±0.08 1.5±0.1 * Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage

2SD2210G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2210G Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter • Features ■ Package • Low collector-emitter saturation voltage VCE(sat)

2SB1467

Contextual Info: Ordering number:EN3363 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1467/2SD2218 General High-Current Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2041A Features [2SB1467/2SD2218] · Micaless package facilitating mounting.

2SB1462L

Abstract: 2SD2216L
Contextual Info: Transistors 2SD2216L Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB1462L 0.035±0.005 2 0.80±0.05 3 1 4 • High foward current transfer ratio hFE • Mold leadless type package, allowing downsizing and thinning of

2SD2210

Contextual Info: Transistor 2SD2210 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter Unit: mm ● • Absolute Maximum Ratings * 0.5±0.08 1.5±0.1 Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage

2sd2397

Abstract: 2SD1866 2SD2143 2SD2212 T100 diode zener c05 transistor collector diode protection
Contextual Info: 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Transistors Medium Power Transistor Motor, Relay drive (60±10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 !External dimensions (Units : mm) 2SD2212 4.0 1.0 1.5 0.4 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 !Features 1) Built-in zener diode between collector and base.

2SD2210

Abstract: marking va transistors
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2210 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 4.5±0.1 1.5±0.1 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

2SD2210G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2210G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-voltage output amplification For muting For DC-DC converter • Package • Low collector-emitter saturation voltage VCE(sat)

2SB1462G

Abstract: 2SD2216G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1462G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SD2216G • Features ue pl d in an c se ed lud pl vi an m m es

2SB1462J

Abstract: 2SD2216J SC-89
Contextual Info: Transistors 2SD2216J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For general amplification Complementary to 2SB1462J 0.12+0.03 –0.01 0.375 2 0 to 0.02 (0.50)(0.50) (0.80) 1 0.27±0.02 5˚ 0.70+0.05 –0.03 • High forward current transfer ratio hFE

2SB1462L

Abstract: 2SD2216L
Contextual Info: Transistors 2SB1462L Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216L Unit: mm 0.020±0.010 2 0.80±0.05 3 • Features 4 1 1.00±0.05 0.60±0.05 0.30±0.03 Parameter Symbol Rating Unit Collector-base voltage Emitter open

Contextual Info: Ordering number:ENN3363 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1467/2SD2218 General High-Current Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2041A Features [2SB1467/2SD2218] · Micaless package facilitating mounting.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2210 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 Rating Unit Collector-base voltage (Emitter open)

SD2219

Abstract: 2SB14 2SB1468 2SD2219
Contextual Info: Ordering number: EN3364 2SB1468/2SD2219 Epitaxial Planar Silicon Transistors 30V/8A High-Speed Switching Applications A pplications • Relay drivers, high-speed inverters, converters,etc. F eatures • Micaless package facilitating mounting • Low collector-to-emitter saturation voltage : VcE sat ——0.5V(PNP), 0.4V(NPN) max.

Contextual Info: Transistors IC SMD Type Product specification 2SD2210 Features Low collector-emitter saturation voltage VCE sat Low on resistance ron. High forward current transfer ratio hFE. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For general amplification Complementary to 2SB1462J 0.12+0.03 –0.01 (0.375) 2 0 to 0.02

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2210 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 1.5±0.1 • Absolute Maximum Ratings Ta = 25°C

2SD1856

Abstract: 2SD1764 2SD1866 2SD2143 2SD2212 94L-885-D87
Contextual Info: Transistors 2SD2212 / 2SD2143 / 2SD1866 / 2SD1764 2SD1856 96-762-D84 (94L-885-D87) 321

Contextual Info: Transistors 2SD2216L Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1462L Unit: mm 0.020±0.010 2 M Di ain sc te on na tin nc ue e/ d 0.80±0.05 3 • Features 4 1 Parameter Symbol Rating Unit Collector-base voltage Emitter open