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    2SD2276 Search Results

    2SD2276 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD2276 Panasonic NPN Transistor Darlington Original PDF
    2SD2276 Panasonic Silicon NPN triple diffusion planar type Darlington Original PDF
    2SD2276 Panasonic Silicon NPN triple diffusion planar type Darlington Original PDF
    2SD2276 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD2276 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2276 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD2276 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2276P Panasonic Silicon NPN Triple Diffusion Planar Type Darlington Power Transistor Original PDF
    2SD2276Q Panasonic Silicon NPN Triple Diffusion Planar Type Darlington Power Transistor Original PDF
    2SD2276S Panasonic Silicon NPN Triple Diffusion Planar Type Darlington Power Transistor Original PDF

    2SD2276 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1503

    Abstract: 2SD2276
    Text: SavantIC Semiconductor Product Specification 2SB1503 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SD2276 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplification


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    PDF 2SB1503 2SD2276 2SB1503 2SD2276

    2SD2276

    Abstract: 2SB1503
    Text: Power Transistors 2SD2276 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1503 Unit: mm Symbol Ratings Unit Collector to base voltage VCBO 160 V Collector to emitter voltage VCEO 140 V Emitter to base voltage


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    PDF 2SD2276 2SB1503 2SD2276 2SB1503

    2SB1503

    Abstract: 2SD2276 2sb15
    Text: Power Transistors 2SD2276 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1503 5.0±0.3 3.0 26.0±0.5 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open)


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    PDF 2SD2276 2SB1503 2SB1503 2SD2276 2sb15

    2SB1503

    Abstract: 2SD2276
    Text: Power Transistors 2SD2276 Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification Complementary to 2SB1503 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector to base voltage VCBO 160 V Collector to emitter voltage


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    PDF 2SD2276 2SB1503 2SB1503 2SD2276

    2SB1503

    Abstract: 2SD2276 darlington power transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -7A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2276 APPLICATIONS


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    PDF 2SD2276 -160V; -140V; 2SB1503 2SD2276 darlington power transistor

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1503 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD2276 1.0±0.2 Unit Collector-base voltage Emitter open VCBO −160 V Collector-emitter voltage (Base open) VCEO −140 V Emitter-base voltage (Collector open)


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    PDF 2SB1503 2SD2276

    2SB1503

    Abstract: 2SD2276
    Text: Power Transistors 2SB1503 Silicon PNP epitaxial planar type Darlington Unit: mm For power amplification Complementary to 2SD2276 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit VCBO −160 V Collector to emitter voltage VCEO −140 V Emitter to base voltage


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    PDF 2SB1503 2SD2276 2SB1503 2SD2276

    2SB1503

    Abstract: 2SD2276
    Text: Power Transistors 2SB1503 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2276 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –160


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    PDF 2SB1503 2SD2276 2SB1503 2SD2276

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1503 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD2276 5.0±0.3 3.0 (10.0) (6.0) (2.0) (4.0) 20.0±0.5 (1.5) d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow


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    PDF 2SB1503 2SD2276

    2SB1503

    Abstract: 2SD2276
    Text: Power Transistors 2SB1503 Silicon PNP epitaxial planar type Darlington Unit: mm For power amplification Complementary to 2SD2276 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit VCBO −160 V Collector to emitter voltage VCEO −140 V Emitter to base voltage


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    PDF 2SB1503 2SD2276 2SB1503 2SD2276

    2SB1503

    Abstract: 2SD2276
    Text: Power Transistors 2SB1503 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD2276 5.0±0.3 3.0 (10.0) (6.0) (2.0) (4.0) 20.0±0.5 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current


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    PDF 2SB1503 2SD2276 2SB1503 2SD2276

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD2276 Silicon NPN triple diffusion planar type darlington Unit: mm • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage Emitter open VCBO 160 V Collector-emitter voltage (Base open) VCEO 140 V Emitter-base voltage (Collector open)


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    PDF 2SD2276 2SB1503

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD2276 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1503 1.5 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 160 V Collector-emitter voltage (Base open) VCEO 140


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    PDF 2SD2276 2SB1503

    2SD2276

    Abstract: 2SB1503
    Text: Power Transistors 2SD2276 Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification Complementary to 2SB1503 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector to base voltage VCBO 160 V Collector to emitter voltage


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    PDF 2SD2276 2SB1503 2SD2276 2SB1503

    2SB1503

    Abstract: 2SD2276
    Text: Power Transistors 2SB1503 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD2276 2.0 (1.5) 2.7±0.3 3.0±0.3 1.0±0.2 0.6±0.2 • Absolute Maximum Ratings TC = 25°C 5.45±0.3 Parameter Symbol Rating Unit


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    PDF 2SB1503 2SD2276 2SB1503 2SD2276

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original
    PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    2SD2232

    Abstract: 2sb1492 2SD2255 2SD2230 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SD2247
    Text: - 286 - W c k & fè » rl ^ f± -in S m iê V'CBO V 2SD223Q 2SD2232 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SD2247 2SD2249 2SD2250 2SD2252 2SD2254 2SD2255 2SD2256 2SD2258 2SD2259 2SD2260 2SD2263 2SD2265 2SD2266 2SD2273 2SD2274 2SD2275 2SD2276 2SD2280 2SD2281


    OCR Scan
    PDF 2SD2230 2SD2232 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SB1500 2SD221 2SB1501 2sb1492 2SD2255 2SD2233 2SD2234 2SD2247

    2SB1531

    Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140


    OCR Scan
    PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SB1531 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A

    Untitled

    Abstract: No abstract text available
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use Darlington High-hfE VcE(sat) (A) (V) Packag e (No.) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100


    OCR Scan
    PDF 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SA1185 2SB1054/2SD1485 2SB1421 2SD1457 2SD1457A 2SB1252/2SD1892 2SB1502/2SD2275

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan
    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    2SD2340 equivalent

    Abstract: D2254 2SB1493 2SD1485 2SB1531 2SD2328 2SA1185 2SD2052 equivalent 2SD1641 2SD1707
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions General-use Vceo (V) lc VcE(sat) (A) (V) 50 7 100 140 80 LOW VcE(sat) D arlington High-hfE Packag e (No.) lc Ib <0.8 (A) 7 (mA) 700 5 <2 3


    OCR Scan
    PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SD2340 equivalent D2254 2SB1493 2SD1485 2SB1531 2SD2328 2SA1185 2SD2052 equivalent 2SD1641 2SD1707

    2SD2340 equivalent

    Abstract: D2250 2SD1485 d2554 2SD2340 audio Darlington 200 W 2sd1641 2SD2052 equivalent
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large-Power Transistors Application Functions VcEO (V) General-use 50 100 140 lc 80 LOW VcE(sat) 150 200 400 55 60 80/100 Darlington High-hra. (A) VcE(sat) (V) 7 5 7 10 15 20 6 6 20 4


    OCR Scan
    PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SD2340 equivalent D2250 2SD1485 d2554 2SD2340 audio Darlington 200 W 2SD2052 equivalent