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    2SJ38 Search Results

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    2SJ38 Price and Stock

    Toshiba America Electronic Components 2SJ380(F)

    MOSFET P-CH 100V 12A TO220NIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SJ380(F) Tube 50
    • 1 -
    • 10 -
    • 100 $1.338
    • 1000 $1.338
    • 10000 $1.338
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    SANYO Semiconductor Co Ltd 2SJ381-TD

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SJ381-TD 627
    • 1 $1.56
    • 10 $1.56
    • 100 $0.78
    • 1000 $0.624
    • 10000 $0.624
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    onsemi 2SJ381-TD-E

    2SJ381 - P-Channel 2.5V Drive Series '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SJ381-TD-E 4,000 1
    • 1 $0.1479
    • 10 $0.1479
    • 100 $0.139
    • 1000 $0.1257
    • 10000 $0.1257
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    Renesas Electronics Corporation 2SJ387L-E

    2SJ387 - Power Field-Effect Transistor, 10A, 20V, P-Channel MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SJ387L-E 446 1
    • 1 $1.96
    • 10 $1.96
    • 100 $1.84
    • 1000 $1.67
    • 10000 $1.67
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    Renesas Electronics Corporation 2SJ387STL-E

    2SJ387 - Power Field-Effect Transistor, 10A, 20V, P-Channel MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SJ387STL-E 14,497 1
    • 1 $2.65
    • 10 $2.65
    • 100 $2.49
    • 1000 $2.25
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    2SJ38 Datasheets (76)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ380 Toshiba TRANS MOSFET N-CH 100V 12A 3(2-10R1B) Original PDF
    2SJ380 Toshiba Original PDF
    2SJ380 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SJ380 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SJ380 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ380 Toshiba Field Effect Transistor Silicon P Channel MOS Type (Power (L, 2)-pi-MOS V) Scan PDF
    2SJ380 Toshiba Silicon P channel field effect transistor for high speed, high current switching applications, relay drive, DC-DC converter and motor drive applications Scan PDF
    2SJ380 Toshiba P-Channel MOSFET Scan PDF
    2SJ380(F) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 12A TO220NIS Original PDF
    2SJ381 Sanyo Semiconductor Ultrahigh-speed switching Original PDF
    2SJ381 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ381 Sanyo Semiconductor PCP Type Transistors, XP5 / XP6 Type Transistors Scan PDF
    2SJ381 Sanyo Semiconductor Power Mosfets / Transistors Scan PDF
    2SJ381 Sanyo Semiconductor Medium Power Output MOSFETs Scan PDF
    2SJ382 Sanyo Semiconductor Ultrahigh-speed switching Original PDF
    2SJ382 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ382 Sanyo Semiconductor TP Type / MP Type Transistors Scan PDF
    2SJ382 Sanyo Semiconductor Medium Power Output MOSFETs Scan PDF
    2SJ382 Sanyo Semiconductor Ultra High Speed Switching MOSFET Scan PDF
    2SJ383 Sanyo Semiconductor Ultrahigh-speed switching Original PDF

    2SJ38 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SJ388S

    Abstract: Hitachi 2SJ Hitachi DSA001651
    Text: 2SJ388 L , 2SJ388(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator, DC - DC converter


    Original     		PDF 2SJ388 D-85622 2SJ388S Hitachi 2SJ Hitachi DSA001651

    2SJ381

    Abstract: ITR00463 ITR00464 ITR00465 ITR00466 ITR00467 ITR00468 ITR00469
    Text: 注文コード No. N 5 2 9 6 A 2SJ381 No. 5 2 9 6 A 52599 新 開発速報 No. ※ 5296 とさしかえてください。 2SJ381 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。


    Original     		PDF 2SJ381 250mm2 500mA, ITR00471 ITR00472 ITR00473 ITR00474 2SJ381 ITR00463 ITR00464 ITR00465 ITR00466 ITR00467 ITR00468 ITR00469

    J380

    Abstract: transistor j380 2SJ380
    Text: 2SJ380 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2-π-MOSV 2SJ380 Relay Drive, DC-DC Converter and Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.7 S (typ.)


    Original     		PDF 2SJ380 J380 transistor j380 2SJ380

    2SJ384

    Abstract: ds 300 ds-300 75 v
    Text: 2SJ384 L , 2SJ384 S Silicon P-Channel MOS FET Application LDPAK High speed power switching 4 Features 1 • • • • Low on–resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source • Suitable for Switching regulator, DC – DC


    Original     		PDF 2SJ384 ds 300 ds-300 75 v

    2SJ386

    Abstract: 2SJ386TZ-E PRSS0003DC-A
    Text: 2SJ386 Silicon P Channel MOS FET REJ03G0861-0200 Previous: ADE-208-1195 Rev.2.00 Sep 07, 2005 Description High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source


    Original     		PDF 2SJ386 REJ03G0861-0200 ADE-208-1195) PRSS0003DC-A 20ijing 2SJ386 2SJ386TZ-E PRSS0003DC-A

    J380

    Abstract: 2sj380
    Text: 2SJ380 東芝電界効果トランジスタ シリコンPチャネルMOS形 L2-π-MOSV 2SJ380 ○ リレー駆動､DC-DC コンバータ用 ○ モータドライブ用 • 4 V 駆動です。 • オン抵抗が低い。 単位: mm : RDS (ON) = 0.15 Ω (標準)


    Original     		PDF 2SJ380 SC-67 2-10R1B J380 2sj380

    Hitachi 2SJ

    Abstract: Hitachi DSA00279
    Text: 2SJ386 Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter


    Original     		PDF 2SJ386 Hitachi 2SJ Hitachi DSA00279

    Hitachi 2SJ

    Abstract: Hitachi DSA002779
    Text: 2SJ387 L , 2SJ387(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator, DC - DC converter Outline


    Original     		PDF 2SJ387 Hitachi 2SJ Hitachi DSA002779

    2SJ382

    Abstract: No abstract text available
    Text: Ordering number:EN5057 P-Channel Silicon MOSFET 2SJ382 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2083B [2SJ382] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5 1.6 0.8


    Original     		PDF EN5057 2SJ382 2083B 2SJ382] 2092B 2SJ382

    2SJ389

    Abstract: No abstract text available
    Text: 2SJ389 L , 2SJ389 S Silicon P Channel MOS FET Application DPAK–2 4 High speed power switching 4 Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC


    Original     		PDF 2SJ389

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    2SJ387S

    Abstract: TR325
    Text: IC MOSFET SMD Type SMDType Silicon P-Channel MOSFET 2SJ387S TO-252 Features Low on-resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 0.127 max 3.80 +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28


    Original     		PDF 2SJ387S O-252 2SJ387S TR325

    Hitachi 2SJ

    Abstract: Hitachi DSA002751
    Text: 2SJ386 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter


    Original     		PDF 2SJ386 D-85622 Hitachi 2SJ Hitachi DSA002751

    sb30-03p

    Abstract: 3SK181 DSE015 3SK189
    Text: SAfÊYO L,i s t s a n d 2SJ.3SK type, T y p e No. ma r k i ng 2 S J 187 .1 A 2 S J 19 0 J B 2 S J 19 3 .1 c A M 2 S J 284 B M 2 SJ 285 C M 2 SJ 286 2SJ287 J D 2 SJ 288 J E 2SJ289 J F 2SJ316 .1 G 2 SJ 3 3 5 J H 2SJ381 J I 3SK180 3SK181 3SK189 3SK248 3SK251


    OCR Scan     		PDF 2SJ187 2SJ190 2SJ193 2SJ284 2SJ285 2SJ286 2SJ287 2SJ288 2SJ289 2SJ316 sb30-03p 3SK181 DSE015 3SK189

    Untitled

    Abstract: No abstract text available
    Text: 2SJ384 L , 2SJ384(S) Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC - DC converter


    OCR Scan     		PDF 2SJ384

    Untitled

    Abstract: No abstract text available
    Text: 2SJ389 L , 2SJ389 S Silicon P C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC —DC


    OCR Scan     		PDF 2SJ389L 2SJ389S 2SJ389 2SJ389

    2SJ38

    Abstract: No abstract text available
    Text: 2SJ387 L , 2SJ387(S) Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC - DC converter


    OCR Scan     		PDF 2SJ387 2SJ38

    2SJ380

    Abstract: 015IL
    Text: TOSHIBA 2SJ380 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ380 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS r <v> 4V Gate Drive Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SJ380 015IL

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SJ380 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-tt- M O S V 2SJ380 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS


    OCR Scan     		PDF 2SJ380 --100/iA --60V) 20kf2) --12A,

    2SJ381

    Abstract: 5296a
    Text: O rdering n u m b e r:EN5296A N0.5296A 2SJ381 P-Channel MOS Silicon FET SA\YO i Ultrahigh-Speed Switching Applications F eatu res • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. bsolute M axim um R atings at Ta = 25c,C Drain-to-Source Voltage


    OCR Scan     		PDF EN5296A 2SJ381 250mm2 5296a

    2SJ380

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ380 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ380 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ±0.3 4 V Gate Drive


    OCR Scan     		PDF 2SJ380 2SJ380

    Untitled

    Abstract: No abstract text available
    Text: 2SJ386 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter


    OCR Scan     		PDF 2SJ386

    Hitachi 2SJ

    Abstract: No abstract text available
    Text: 2SJ388 L , 2SJ388(S) Silicon P-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • Low on-resistance • H igh speed sw itching • Low drive current • 2.5 V G ate drive device can be driven from 3 V Source • Suitable for Sw itching regulator, D C - D C converter


    OCR Scan     		PDF 2SJ388 2SJ388CS) Hitachi 2SJ

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ380 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSV 2SJ380 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm 3.2 ± 0 .2 4V Gate Drive Low Drain-Source ON Resistance l° 2 .7 ± 0 .2 3.0 )


    OCR Scan     		PDF 2SJ380 --60V)