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    2SJ416 Search Results

    2SJ416 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ416 Sanyo Semiconductor Ultrahigh-speed switching Original PDF
    2SJ416 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ416 Sanyo Semiconductor Power Mosfets / Transistors Scan PDF
    2SJ416 Sanyo Semiconductor PCP Type Transistors, XP5 / XP6 Type Transistors Scan PDF
    2SJ416 Sanyo Semiconductor Large Signal Power MOSFET Scan PDF

    2SJ416 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    122ID

    Abstract: 2062a 2SJ416 ITR00500 ITR00501 ITR00502 ITR00503 ITR00504 ITR00505
    Text: 注文コード No. N 5 2 6 6 2SJ416 No. 5 2 6 6 52599 新 2SJ416 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


    Original     		PDF 2SJ416 250mm2 --15V ITR00508 --10V ITR00506 ITR00509 ITR00510 122ID 2062a 2SJ416 ITR00500 ITR00501 ITR00502 ITR00503 ITR00504 ITR00505

    52664

    Abstract: 2SJ416
    Text: Ordering number:EN5266 P-Channel Silicon MOSFET 2SJ416 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2062A [2SJ416] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max 1.5 1


    Original     		PDF EN5266 2SJ416 2SJ416] 25max 250mm2× 52664 2SJ416

    2SJ416

    Abstract: No abstract text available
    Text: Ordering number:EN5266 P-Channel Silicon MOSFET 2SJ416 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2062A [2SJ416] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max 1.5 1


    Original     		PDF EN5266 2SJ416 2SJ416] 25max 250mm2Ã 2SJ416

    TA-2770

    Abstract: 2SJ416 FX856 53723
    Text: 注文コード No. N 5 3 7 2 A FX856 No. N 5 3 7 2 A 30100 新 開発速報 No. ※ 5372 とさしかえてください。 FX856 特長 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード


    Original     		PDF FX856 FX856 2SJ416 SB07-03P 750mm2 IT01339 IT01337 IT01341 IT01342 TA-2770 2SJ416 53723

    2SJ416

    Abstract: FX856 SB07-03P 53723
    Text: Ordering number:ENN5372A MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FX856 DC/DC Converter Applications Package Dimensions unit:mm 2119 [FX856] 5.0 0.5 1.5 1.5 6 0.7 5 5.9 1.0 • The FX856 composite device consists of following two devices to facilitate high-density mounting. One


    Original     		PDF ENN5372A FX856 FX856] FX856 2SJ416 SB07-03P, SB07-03P 53723

    2sk3436

    Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
    Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis


    Original     		PDF TND023F FX504 CPH5504 MCH5805 FX505 HPA72R TND024F FX506 MCH3301 TND024MP 2sk3436 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN5372A MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FX856 DC/DC Converter Applications Package Dimensions unit:mm 2119 [FX856] 5.0 0.5 1.5 1.5 6 0.7 5 5.9 1.0 • The FX856 composite device consists of following two devices to facilitate high-density mounting. One


    Original     		PDF ENN5372A FX856 FX856] FX856 2SJ416 SB07-03P,

    2sk3436

    Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
    Text: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。


    Original     		PDF 40610HKPC TC-00002289 CPH5815 MCH5815 MCH6629 MCH6649 CPH6610 CPH6614 SCH1411 SCH1436 2sk3436 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970

    2SJ469

    Abstract: No abstract text available
    Text: 1 VDSS = 20V 30V, P-channel Electrical characteristics atTa =25 C Absolute maximum ratings at Ta =25°C Type No. Package Voss m 2SJ284 W CP •o W 0.3 2SJ187 2SJ287 VG8S ±15 2SJ416 m «5 VGS o mtntomax W 0.25+ 1.0 0.5 PCP Po* 1.0 to 2.0 3.5 120 1.0 to 2.5


    OCR Scan     		PDF 2SJ284 2SJ187 2SJ287 2SJ416 2SJ188 O-220 O-220ML 2SJ189 2SJ417 2SJ418 2SJ469

    2SJ416

    Abstract: No abstract text available
    Text: Ordering n u m b e r:EN 5266 2SJ416 No.5266 P-Channel Silicon MOSFET SMiYO i Ultrahigh-Speed Switching Applications F e a tu re s •Low ON-resistance. • U ltrahigh-speed switching. ■4 V drive. ^solute M axim um R a tin g s at Ta = 25°C Drain-to-Source Voltage


    OCR Scan     		PDF EN5266 2SJ416 250mm2

    2sc3153

    Abstract: 2SJ335 transistor 2sc4460 2SC4427 2sc4460 2SC3151 2SC3152 2SC3277 2SC3448 2SC3449
    Text: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta « 25 ~C hre@VCE • 1C VCBO (V) VCEO (V) V ebo (V) (A) (W ) A 1C PC fr@ VC E ■ IC tf(toff) max U s) (A) fr (MHz) 2SC3151 T03PB Switching requlator


    OCR Scan     		PDF 2SC3151 T03PB 10to40 2SC3152 2SC3I53 2SC3277 2sc3153 2SJ335 transistor 2sc4460 2SC4427 2sc4460 2SC3448 2SC3449

    2SK22

    Abstract: SGF23
    Text: 2SK.2SJ Ty p e Lists for* Type No . 1nd ioat 1on on Di odes and Hal 1 E 1ements. type, 3SK,SVC,pin d i o d e S . B . D . G a A s SBD, FET SW D i o d e No. 2SK242 2SK283 2 SK 303 2SK436 2SK443 2 SK 53 6 2SK543 2SK545 2SK771 2 SK 84 8 2SK93 1 2SK932 2SK968 2SK10 65


    OCR Scan     		PDF 2SK242 2SK283 2SK436 2SK443 2SK543 2SK545 2SK771 2SK93 2SK932 2SK968 2SK22 SGF23

    2SK2437

    Abstract: CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking
    Text: Medium Output Power M0SFETs 2 LD S r~ i e s (L owD rive)VDS S :1 2V — 200V(F.C.P:F 1 a t SAfÈYO Channe 1 P i-o c e s s) SANYO has realized low-threshold voltage by optimum design of impurity concentration of Si or Si surface by adopting the F.C. P. process


    OCR Scan     		PDF MT980624TR 2SK2437 CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking