2SK1191
Abstract: transistor 2SK1191 FM20 AT20N
Text: 2SK1191 External dimensions 1 . FM20 Absolute Maximum Ratings Symbol Ta = 25ºC Electrical Characteristics Ratings Unit Symbol min Unit max VDSS 60 V V(BR) DSS V I D = 250µA, VGS = 0V ±20 V I GSS ±500 nA VGS = ±20V ID ±30 A I DSS 250 µA VDS = 60V, VGS = 0V
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2SK1191
FM100
2SK1191
transistor 2SK1191
FM20
AT20N
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2SK1190
Abstract: FM20
Text: 2SK1190 External dimensions 1 . FM20 Absolute Maximum Ratings Symbol Ta = 25ºC Ratings Unit Symbol min (Ta = 25ºC) Ratings typ 60 V V(BR) DSS V I D = 250µA, VGS = 0V ±20 V I GSS ±500 nA VGS = ±20V ID ±22 A I DSS 250 µA VDS = 60V, VGS = 0V A
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2SK1190
FM100
2SK1190
FM20
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2SK1192
Abstract: FM20
Text: 2SK1192 External dimensions 2 . FM100 Absolute Maximum Ratings Symbol Ta = 25ºC Ratings Unit Symbol min Unit max Conditions VDSS 60 V V(BR) DSS V I D = 250µA, VGS = 0V ±20 V I GSS ±500 nA VGS = ±20V ID ±40 A I DSS 250 µA VDS = 60V, VGS = 0V A
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2SK1192
FM100
2SK1192
FM20
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std2n52
Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232
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2SK1119
2SK1120
2SK1151
2SK1152
2SK1153
2SK1154
2SK1155
2SK1156
2SK1157
2SK1158
std2n52
stp2na60
buz102 equivalent
SSH6N80
rfp60n06
replacement for IRL2203N
BUZ91 equivalent
RFP60N06LE
IRFP460 cross reference
buz91a equivalent
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2SK1192
Abstract: No abstract text available
Text: 2SK1192 External dimensions 2 . FM100 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 60 V V(BR) DSS VGSS ±20 V I GSS ID ±40 A I DSS A VTH 2.0 W Re (yfs) 13 ±160 (Tch ID (pulse) 150ºC) 90 (Tc = 25ºC)
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2SK1192
FM100
2SK1192
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2sk129
Abstract: 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131
Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min (V) 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2SK110 2SK111 2SK112 2SK113 2SK117 2SK118 2SK119
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2SK101
2SK102
2SK103
2SK104
2SK105
2SK106
2SK107
2SK108
2SK109
2SK109A
2sk129
2sk150 datasheet
2SK101
2SK107 data sheet
2SK105 Datasheet
2sk122
2SK109
2sk146 datasheet
2SK182E
2SK131
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2SK1194
Abstract: POWER MOSFET N-Channel 230V F05E23 230V Mosfet
Text: SHINDENGEN VR Series Power MOSFET 2SK1194 N-Channel Enhancement type OUTLINE DIMENSIONS F05E23 Case : E-pack (Unit : mm) 230V 0.5A FEATURES ● Applicable to 4V drive. ● The static Rds(on) is small. ● Built-in ZD for Gate Protection. APPLICATION ● DC/DC converters
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2SK1194
F05E23
2-24V
2SK1194
POWER MOSFET N-Channel 230V
F05E23
230V Mosfet
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Untitled
Abstract: No abstract text available
Text: SHINDENGEN VR Series Power MOSFET 2SK1194 N-Channel Enhancement type OUTLINE DIMENSIONS F05E23 Case : E-pack (Unit : mm) 230V 0.5A FEATURES Applicable to 4V drive. The static Rds(on) is small. Built-in ZD for Gate Protection. APPLICATION DC/DC converters
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2SK1194
F05E23
2-24V
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Untitled
Abstract: No abstract text available
Text: SHINDENGEN VR Series Power MOSFET 2SK1195 N-Channel Enhancement type OUTLINE DIMENSIONS F1E23 Case : E-pack (Unit : mm) 230V 1.5A FEATURES Applicable to 4V drive. The static Rds(on) is small. Built-in ZD for Gate Protection. APPLICATION DC/DC converters
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2SK1195
F1E23
2-24V
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2SK1191
Abstract: transistor 2SK1191 FM20
Text: 2SK1191 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 60 V V(BR) DSS VGSS ±20 V I GSS ID ±30 A I DSS A VTH 2.0 40 (Tc = 25ºC) W Re (yfs) 13 ±120 (Tch ID (pulse) PD 150ºC)
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2SK1191
2SK1191
transistor 2SK1191
FM20
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2SK1191
Abstract: transistor 2SK1191 FM20
Text: 2SK1191 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 60 V V(BR) DSS VGSS ±20 V I GSS ID ±30 A I DSS A VTH 2.0 13 ±120 (Tch ID (pulse) 150ºC) min (Ta = 25ºC) Ratings
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2SK1191
1200T
2SK1191
transistor 2SK1191
FM20
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2SK1198
Abstract: TCA 700 v T04CO
Text: MOS Field Effect P ow er Transistor 2SK1198 N ^ ^ ^ N 0r7 — M O S FET m j i m 2SK1198 li, N MOS F E T ffits :* * <, ? * > m x ^ y f v r t m & i s t i x h ' > , ^ E l ¥ fi : mm) 1 0 .5 M A X . s s jg & x 4 4 .7 M A X . AC 7 r-7 °? Î : t* Iz M m X to
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2SK1198
2SK1198
TCA 700 v
T04CO
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5Bt fet
Abstract: 2SK119 transistor afr 46 transistor T700 transistor afr 22 Tic T430 t280 930 T430 T030 T108
Text: NEC j ! T f / \ f X h =7 J u n c tio n Field E ffect T ra n s is to r A 2 S 1 K 1 9 JH /.$? -*tt ilfix U ffl Silicon N-Channel Junction FET DC Amplifier, High Frequency Amplifier Industrial Use ? l 4 t ± \ z £ f) 2SK119Ü, <, o i) — 0 /PA C K A G E DIMENSIONS
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2SK119
2SK119Ã
5Bt fet
2SK119
transistor afr 46
transistor T700
transistor afr 22
Tic T430
t280 930
T430
T030
T108
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N and P MOSFET
Abstract: No abstract text available
Text: /X*7— M O SFET Power MOSFET N-Channel, Enhancement type • O U T L IN E D IM E N S IO N S Case ." E -pack 2SK1194 2.55 ±0-2 230V 0.5A 0.5 * 0-! \ 0.5 1.1 ± 0-2 \ Gate . / Source Drain / ■ Unit • R A TIN G S A bsolute Maximum R atings m It e m B J
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2SK1194
200i3
N and P MOSFET
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Untitled
Abstract: No abstract text available
Text: M OSFET J 'ì * ? • Wfé\f->£IH 7 x>/\> .*>bg> Power MOSFET N-Channel, Enhancem ent ty p e O U T L I N E D IM E N S IO N S 2SK1195 230V 1.5A ■ R A T IN G S A b s o lu te M axim um R a tin g s m s Ite m te Ife \ar Conditions y- Symbol « ÏF S JE S to ra g e T e m p e ra tu re
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2SK1195
--10V,
--67i2
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2SK1197
Abstract: No abstract text available
Text: 2SK1197 SILICON N-CHANNEL ENHANCEMENT MOS FET m m & ^ C “ 2 00p F • • r - h • v - x r i 500V typ. • y u j > •y - x m lOOOVmin., 1500V typ. • JiIÍSÜT K ì f V X ó<± ë i,>0 1. Source 2. Drain 3. G ate (Dim ensions in mm) I ÿ/s I = 1 5 0 m S typ.
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2SK1197
150mS
7c-25
O-126
Ta-25Â
2SK1197
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LT 672
Abstract: yf7a 2SK1195 F1E23 L200
Text: S M D M *> U -X yt^-MOSFET SURFACE MOUNTING TECHNOLOGY DEVICE • S S O U T L IN E D IM E N S IO N S 2SK1195 F 1 E 2 3 2 3 0 V 1.5A ■ R A TIN G S A b s o lu te M axim u m R a tin g s m a ft IE -¥■ Sym bol Ite m S to r a g e T e m p e ra tu r e T stg
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2SK1195
F1E23)
LT 672
yf7a
2SK1195
F1E23
L200
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2SK1198
Abstract: ss1212 ScansUX881 nec 2501 LD
Text: NEC IM-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK1198 DESCRIPTION The 2SK1198 Transistor is N-channel designed for MOS switching Field Effect Power power supplies, PACKAGE DIM EN SIO N S AC in millimeters inches Adapters. FEATURES •
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2SK1198
1988M
ss1212
ScansUX881
nec 2501 LD
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Untitled
Abstract: No abstract text available
Text: SMDÜSi* / ' - % / t 7 —MOSFET SURFACE MOUNTING TECHNOLOGY DEVICE VtWi-h Æ O U T L IN E D IM E N S IO N S 2SK1195 F 1 E 2 3 ) 230V 1.5A • Æ fê * R A TIN G S ■ A b s o lu te M a x im u m m Ite m H R a tin g s y- m & Sy m b ol fK7Hii)& ft m C o n d itio n s
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2SK1195
--10V
F1E23)
I00VN
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2SH14
Abstract: 2SH21 2SH11 2SH19 2SK1056 6AM13 4AK19
Text: POWER MOS FET •G eneral amplifier Package code Type No. -tas 2SK1197 TO-3P 2SJ160 2SJ161 2SJ162 2SJ351 2SJ352 to Ratings Vos* j 10 Vosx (V)| «A) 100 1 0.5 -7 -120 -7 -140 -7 -160 -8 -180 -200 ! -8 Characteristics Mai ResfO» Ciss Status (S itili. <PF)«W>
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2SK1197
2SJ160
2SJ161
2SJ162
2SJ351
2SJ352
2SK1056
2SK1087
2SK1058
2SK2220
2SH14
2SH21
2SH11
2SH19
6AM13
4AK19
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Untitled
Abstract: No abstract text available
Text: SMDÜW p S 'U -X / t 9 —MOSFET SURFACE MOUNTING TECHNOLOGY DEVICE • N- f v Z j l r , X > A > X X > b M O U T L IN E D IM E N S IO N S Case : E-pack 2SK1194 F 0 5 E 2 3 2.55 ±0 -2 230V 0.5a 0 .5 ± 0 1 0.5 1.1 = [U nit • mm] ■ ÎÈ fê it R A TIN G S
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2SK1194
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LL200C
Abstract: No abstract text available
Text: M OSFET i.»\>7.*>bW Power MOSFET • N-Channel, Enhancement type O U T L IN E D IM E N S IO N S 2SK1194 230V 0.5A ■ æ fê * R A T IN G S Absolute Maximum Ratings m Item b2 -fSymbol s IS ÿ fit S to ra g e T em p eratu re ~f~ jf» Jf. Channel T em perature
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2SK1194
LL200C
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2SK1198
Abstract: No abstract text available
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 NEC IM-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK1198 DESCRIPTION The 2SK1198 Transistor
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2SK1198
2SK1198
1988M
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2SK1366
Abstract: 2SK2240 2SK1713 2SK1173 16 FM 40 2sk2239 2sk1711 2SK2156A 2SK1177 2SK2156
Text: Power MOSFETs Power MOSFETs ÎËf? te üSfiA _'JJL Pd Te = 25"C} (W Igclifcal^har^tafBtics (Ta * 25C) « {Vcas = 1 0 V J Remarks <W ) m (m J ) 'w 2SK1188 10 2.1 0 2 300 FM20 2SK1189 15 f;. 2 0 1 640 FM 20 2SK2419 22 36 17 0.05 1250 FM20 2SK1190 22 35 '7
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2SK1369
2SK2238
2SK2803
2SK2239
2SK280-1
2SK2240
2SK2701
2SK2241
2SK2242
2SK2702
2SK1366
2SK1713
2SK1173
16 FM 40
2sk2239
2sk1711
2SK2156A
2SK1177
2SK2156
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