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    2SK1406 Search Results

    2SK1406 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1406 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1406 Unknown FET Data Book Scan PDF
    2SK1406 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1406 Panasonic Silicon N-Channel Power F-MOS FET Scan PDF

    2SK1406 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1406 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)20 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)3 Minimum Operating Temp (øC)


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    2SK1406 PDF

    MA166s

    Abstract: MA165 MA166
    Text: 2SK1406 Switching Diodes MA165, MA166, MA167 Silicon epitaxial planer type Unit : mm For switching circuits φ0.45 max. Small capacity between pins, Ct 2.2±0.3 ● Parameter Symbol Rating MA165 Reverse voltage DC MA166 Repetitive peak Unit 35 VR 50 MA167


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    2SK1406 MA165, MA166, MA167 MA165 MA166 MA167 MA166s PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1406 Switching Diodes MA200K Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 1.45 1 3 +0.1 0.4 –0.05 +0.2 of a soft recovery type 0.65±0.15 0.95 2.9 –0.05 1.9±0.2 ● trr reverse current IR, with extremely small leakage current


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    2SK1406 MA200K O-236 SC-59 PDF

    2SK1406

    Abstract: No abstract text available
    Text: 2SK1406 Switching Diodes MA152A Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05 Small capacity between pins, Ct 1 0.95 ● +0.2 Short reverse recovery period trr


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    2SK1406 MA152A O-236 2SK1406 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1406 Power F-MOS FETs 2SK1406 Silicon N-Channel Power F-MOS Unit : mm • Features ON-resistance RDS on : R DS(on)= 0.32Ω(typ) ● High-speed 5.0±0.2 3.2 breakdown voltage, large allowable power dissipation ■ Applications Non-contact relay ● Solenoid


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    2SK1406 140ns PDF

    2SK1406

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK1406 Silicon N-Channel Power F-MOS FET • Features ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply 0.7 15.0±0.3 11.0±0.2 5.0±0.2 3.2 21.0±0.5


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    2SK1406 140ns 2SK1406 PDF

    MA200K

    Abstract: No abstract text available
    Text: 2SK1406 Switching Diodes MA200K Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 1.45 1 3 +0.1 0.4 –0.05 +0.2 0.65±0.15 0.95 2.9 –0.05 1.9±0.2 of a soft recovery type M Di ain sc te on na tin nc ue e/ d ● trr reverse current IR, with extremely small leakage current


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    2SK1406 MA200K MA200K PDF

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK1406 Silicon N-Channel Power F-MOS FET • Features unit: mm 0.7 15.0±0.3 11.0±0.2 5.0±0.2 3.2 21.0±0.5 15.0±0.2 ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply


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    2SK1406 140ns PDF

    marking m2i

    Abstract: MA125
    Text: 2SK1406 Switching Diodes MA125 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.5 –0.05 1 +0.1 +0.1 6 2 4 3 +0.1 0.16–0.06 +0.2 1.1–0.1 mounting 5 0.8 +0.2 2.9 –0.05 Four-element incorporated in one package, enabling high-density


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    2SK1406 MA125 marking m2i MA125 PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE PDF

    ON3105

    Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
    Text: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S


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    MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 ON3105 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013 PDF

    2SK1411

    Abstract: 2SK1535 2SK1410 2SK1538 2SK1358 datasheet 2sk2082 2SK2397-01MR 2SK2475 2SK2370 2sk2225
    Text: STI Type: 2SK1358 Notes: Breakdown Voltage: 900 Continuous Current: 9 RDS on Ohm: 1.4 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.0 Gate Threshold min: 1.5 Gate Threshold max: 3.5 Resistance Switching ton: 80 Resistance Switching toff: 200 Resistance Switching ID: 4.0


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    2SK1358 O-247 2SK1359 2SK1362 2SK2563 2SK2568 2SK1411 2SK1535 2SK1410 2SK1538 2SK1358 datasheet 2sk2082 2SK2397-01MR 2SK2475 2SK2370 2sk2225 PDF

    2SK140

    Abstract: 2SK1406 t1624
    Text: P o w e r F-MOS FET 2SK1406 2S K 1406 Silicon N-Channel Power F-MOS FET P ackage Dim ensions • Features • • • • Low RRD o„ = 0.32il (typ.) High speed switching tf= 140ns (typ.) Secondary breakdown free High voltage power Unit: mm 5.2max. 15.5max.


    OCR Scan
    2SK1406 140ns i717b 2SK140 2SK1406 t1624 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FET 2SK1406 2SK1406 Silicon N-Channel Power F-MOS FET Package Dim ensions • Features • Low R rd „„ =0 .3 2 n (typ.) Unit: mm • High speed switching tf= 140ns (typ.) 5.2max. 15.5max. 6.9mm. • Secondary breakdown free 3.2- • High voltage power


    OCR Scan
    2SK1406 140ns 1717b 2ski40Ã PDF

    Untitled

    Abstract: No abstract text available
    Text: Package Package No. 1Type (D44) N Type (D42) MT4 (D41) TO-22ÛF(a) (D55) TO-220E (D59) TOP-3(a) (D60) TOP-3F(a) (D63) TOP-3E (D65) TOP-3L (067) V dss (V) V gss (V) 500 ±20 2SK1406 2SK2509 2SK1833 2SK2125 2SK1608 2SK2126 ton typ (ns) 150 140 480 15 0.5 8


    OCR Scan
    O-220E 2SK1406 A2SK2572 2SK1605 2SK1606 2SK2123 2SK2124 2SK1607 2SK2032 2SK2571 PDF

    2SK2324

    Abstract: TO-220E 2SK1609 2SK1614 2SK2129 220E 2SK1606 2SK1611 2sk2128 2SK2323
    Text: Field Effect Transistors • Power F-MOS FETs continued Type No. Package No. Application Absolute Maximum Ratinqs (Ta = 2 5 °C) Pd Vdss Vgss Id (T c = 2 5 *C) (V) (W) (A) (V) 5 40 TO-220E D59 Relay DC-DC D48 converter D59 Solenoid D63 Control TC)-220F(a)


    OCR Scan
    2SK758 O-220F 2SK963 2SK1478 A2SK2122 O-220E 2SK1036 2SK766 2SK2324 TO-220E 2SK1609 2SK1614 2SK2129 220E 2SK1606 2SK1611 2sk2128 2SK2323 PDF

    2SK996

    Abstract: No abstract text available
    Text: • Power F-MOS FET Package Package No. ! Type (D44) N Type (D42) 2SK1967 TOP-3(a) (D60) TOP-3F(a) (D63) TOP-3E (D65) TOP-3L (D67) V dss V gss Id (V) (V) (A) RciS'On; V is ton tf td(o«) max. typ. (S) typ. (ns) typ. (ns) typ. (ns) 0.2 4.0 29 53 97 7.1 46


    OCR Scan
    2SK1868 O-220F 2SK1255 2SK1256 2SK1967 2SK1033 2SK1257 O-220E 2SK2578 2SK2579 2SK996 PDF

    2SK1411

    Abstract: 2SK1410 2SK1415 2SK1409 2SK1408 2sk1413 180n 2SK1407 2SK141 2SK1420
    Text: - 102 - f m s ffl £ & m S fr A * * 1 K V * « Se V* (V) frt I* X P d /P c h (A) & * (W) Igss (max) (A) Vg s (V) (Ta=25'C) (min) (max) Vd s (V) (V) (V) 9m (min) Vd s (S) (t$ } (V) Id (A) Id (A) 250 n 500 2 3 10 Im 9 14 10 8 100 ¿i 400 1 5 25 Im 7.2


    OCR Scan
    2SK1405 2SK1406 2SK1407 2SK1408 2SK1409 700ns. 1250nstyp 2SK1426 140nstyp 2SK1427 2SK1411 2SK1410 2SK1415 2sk1413 180n 2SK141 2SK1420 PDF

    OF03

    Abstract: 2SK1263 2SK2377
    Text: Field Effect Transistors • Power F-MOS FETs Line-up Vgs =10V \ Vdss (V) \ to 60 80 100 150 170 200 250 450 500 550 600 800 900 \ (A) \ 1 A2SK2277 Mini Power 1.0 2SK2014 U Type 10 ★2SK2047 I Type a.o (Id=1.2A) ★2SK1834 220Fro 2SK1980 N Type 7o ★ A2SK2128


    OCR Scan
    A2SK2277 2SK2014 2SK2047 2SK1834 220Fro 2SK1980 A2SK2128 A2SK2125 2SK1833 2SK2509 OF03 2SK1263 2SK2377 PDF

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


    OCR Scan
    MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202 PDF

    2SK2225 equivalent

    Abstract: 2SK1762 equivalent 2sk2221 equivalent C2373 2SK215 equivalent 2SJ182 equivalent 2SK1317 equivalent 2SK1336 equivalent 2SK975 equivalent 2sk1058 equivalent
    Text: Section 1 Lineup by Application 1.1 Power Supply Use 1 Recommended products in each power range Recommended Products in Each Power Range Type power supply Voltage Up to 10 w 10 W to 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 100 V to 132 V AC □ 2SK1151 {3.5}


    OCR Scan
    2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1156 2SK1313 2SK1314 2SK1540 2SK1541 2SK2225 equivalent 2SK1762 equivalent 2sk2221 equivalent C2373 2SK215 equivalent 2SJ182 equivalent 2SK1317 equivalent 2SK1336 equivalent 2SK975 equivalent 2sk1058 equivalent PDF

    2SK2324

    Abstract: 220E 2SK2129 2SK76 2sk203 2SK1606 2sk2128 2SK996 2SK1036 2SK1331
    Text: Field Effect Transistors • Power F-MOS FETs continued Type No. Package No. Application Absolute Maximum Ratinqs (Ta = 2 5 °C) Pd Vdss Vgss Id (T c = 2 5 *C) (V) (W) (A) (V) 5 40 Electrical Characteristics (Tc = 2 5 ’C) ti td (off) ton RoS(on) 1Y h I


    OCR Scan
    2SK758 O-220F 2SK963 2SK1478 A2SK2122 O-220E 2SK1036 2SK766 2SK2324 220E 2SK2129 2SK76 2sk203 2SK1606 2sk2128 2SK996 2SK1331 PDF

    2SK2277

    Abstract: 2SK2580 220E4 2SK2015 2SK2014
    Text: FET, IGBT, IPD • Power F-MOS FETs Line-up Vgs =10V ÎV dss \ (V) 60 80 100 150 170 250 450 500 550 800 900 (A) \ 1 2SK2277 Mini-Powerl .0 2SK2014 UTypei.O ★2SK2047 I Type b.o (Id =1.2A) 2SK2538 220Fz.o ★2SK1834 220Fro 2SK1980 N Type 7.0 ★ A2SK2128


    OCR Scan
    2SK2277 2SK2014 2SK2047 2SK2538 220Fz 2SK1834 220Fro 2SK1980 A2SK2128 220E-0 2SK2580 220E4 2SK2015 PDF

    K614

    Abstract: K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996
    Text: Field Effect Trarisistors _ i_ • Silicon Junction FETs Absolute Maximum Ratings Package No. S Mini Type Mini Type (05} Electrical Characteristics (Ta — 25 "C ) (Ta = 25 °C ) Application New S Type TO -92 (D10)


    OCR Scan
    2SK662 2SK1103 2SJ163 2SK198 2SK374 2SK123 2SK1216 2SK1842 2SJ164 2SK301 K614 K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996 PDF