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    2SK15 Search Results

    2SK15 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK1527-E Renesas Electronics Corporation Silicon N Channel MOSFET, TO-3PL, /Tube Visit Renesas Electronics Corporation
    2SK1567-E Renesas Electronics Corporation Silicon N Channel MOSFET, TO-220FM, /Tube Visit Renesas Electronics Corporation
    2SK1593-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SK1583-T1-AZ Renesas Electronics Corporation Silicon N Channel MOSFET Visit Renesas Electronics Corporation
    2SK1590(0)-T1B-A Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
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    2SK15 Price and Stock

    Renesas Electronics Corporation 2SK1518-E

    MOSFET N-CH 500V 20A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK1518-E Tube
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    Avnet Silica 2SK1518-E 28 Weeks 3,240
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    Rochester Electronics LLC 2SK1519-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK1519-E Bulk 7
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    Rochester Electronics LLC 2SK1526-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK1526-E Bulk 11
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    Rochester Electronics LLC 2SK1566-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK1566-E Bulk 117
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    Rochester Electronics LLC 2SK1567-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK1567-E Bulk 65
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    2SK15 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK15 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK15 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK15 Unknown FET Data Book Scan PDF
    2SK15 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK15 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK15 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK15 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK15 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    2SK15 Toshiba (2SK11x) N-CHANNEL JFET TRANSISTOR Scan PDF
    2SK15 Toshiba Japanese Transistor Data Book Scan PDF
    2SK150 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK150 Unknown FET Data Book Scan PDF
    2SK150 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK150 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK150 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK150 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1500 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK1500 NEC Semiconductor Selection Guide Original PDF
    2SK1500 NEC Original PDF
    2SK1500 Unknown FET Data Book Scan PDF
    ...

    2SK15 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor smd marking NE

    Abstract: transistor smd marking 107 MARKING NE smd marking NE 107 10V smd smd NE 2SK1585
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK1585 SOT-89 Unit: mm +0.1 4.50-0.1 Features +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Has low on-state resistance 1 RDS on =1.0 MAX.@VGS=4.0V,ID=0.5A 2 3 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 0.48-0.1


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    PDF 2SK1585 OT-89 transistor smd marking NE transistor smd marking 107 MARKING NE smd marking NE 107 10V smd smd NE 2SK1585

    Untitled

    Abstract: No abstract text available
    Text: 2SK1578 Ordering number : EN4178B SANYO Semiconductors DATA SHEET 2SK1578 N-channel Junction FET Electret Condenser Microphone Applications Features • • • • Especially suited for use in electret condenser microphone for audio equipments and telephones.


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    PDF 2SK1578 EN4178B

    2SK1589

    Abstract: 5V GATE TO SOURCE VOLTAGE MOSFET
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK1589 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 impedance. 0.55 Not necessary to consider driving current because of its high input +0.1 1.3-0.1 +0.1 2.4-0.1 Directly driven by Ics having a 5V power supply.


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    PDF 2SK1589 OT-23 2SK1589 5V GATE TO SOURCE VOLTAGE MOSFET

    2SJ201

    Abstract: 2SK1530 toshiba pb includes
    Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −200 V z High forward transfer admittance : |Yfs| = 5.0 S typ. z Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C)


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    PDF 2SJ201 2SK1530 2-21F1B 2SJ201 2SK1530 toshiba pb includes

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SK1590 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Not necessary to consider driving current because of its high input 1 impedance. 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Directly driven by Ics having a 5V power supply. 0.4 3 Features


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    PDF 2SK1590 OT-23

    Untitled

    Abstract: No abstract text available
    Text: Transistors MOSFET IC SMD Type Product specification 2SK1584 SOT-89 Features Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Has low on-state resistance RDS on =2.0 MAX.@VGS=4.0V,ID=0.3A 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 0.48-0.1


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    PDF 2SK1584 OT-89

    2SK1521

    Abstract: 2SK1522 Hitachi DSA00108
    Text: 2SK1521, 2SK1522 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode trr = 120 ns Suitable for motor control, switching regulator, DC-DC converter


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    PDF 2SK1521, 2SK1522 2SK1521 D-85622 2SK1521 2SK1522 Hitachi DSA00108

    2SK1544

    Abstract: No abstract text available
    Text: 2SK1544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII.5 2SK1544 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.15 Ω (typ.) High forward transfer admittance : |Yfs| = 21 S (typ.) Low leakage current


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    PDF 2SK1544 2SK1544

    Untitled

    Abstract: No abstract text available
    Text: 2SJ200 東芝電界効果トランジスタ シリコンPチャネルMOS形 2SJ200 ○ 低周波電力増幅用 単位: mm : VDSS = −180V z 高耐圧です。 z 高順方向伝達アドミタンスです。 : |Yfs|= 4.0S 標準 z 2SK1529 とコンプリメンタリになります。


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    PDF 2SJ200 2SK1529

    2SK1118

    Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
    Text: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531


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    PDF 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 2SK387 2SK572 2SK578 2SK1118 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A _ 2SK1544 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SIII-5 2 S K 1 5 4 4 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS.


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    PDF 2SK1544 300/uA

    2SK152

    Abstract: 2SK152 Sony 2sk152 equivalent
    Text: 2SK152 SONY. Silicon N-Channel Junction FET Package Outline Description The 2SK152 is the first device to reach such a high "Figure of merit" level. Because it uses the latest Epitaxy and Pattern technology. Head amplifiers Video Cameras VTRs etc. per­ form very efficiently.


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    PDF 2SK152 2SK152 2SK152 Sony 2sk152 equivalent

    TRANSISTOR bH-10

    Abstract: marking BH-10 2SJ200 2SK1529 SC-65
    Text: TO S H IB A 2SJ200 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ200 HIGH POWER AMPLIFIER APPLICATION U nit in mm 1 5 .9 M A X . • High Breakdown Voltage • High Forward Transfer Admittance : |Yfs|= 4 .0 S Typ. • Complementary to 2SK1529


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    PDF 2SJ200 2SK1529 SC-65 2-16C1B TRANSISTOR bH-10 marking BH-10

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SK1544 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOSType ji-MOS III.5 High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • Low Drain-Source ON Resistance


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    PDF 2SK1544

    Untitled

    Abstract: No abstract text available
    Text: 2SK1548-01M SIPMOS FU JI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET FAP-II SERIES • Features IOutline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V gss = ± 30V Guarantee


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    PDF 2SK1548-01M DQG30Ã 548-01M

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 10^7250 0G23314 T O SH IB A FIELD EFFECT T RA N SIST O R 2SK1542 TbT SILICO N N C H A N N E L M O S TYPE L2-;r-M O SIV 2 S K 1 542 INDUSTRIAL APPLICATIONS H IGH SPEED SW IT C H IN G APPLICATION S. RELA Y DRIVE, M O T O R D RIV E A N D D C -D C C O N V ER TER APPLICATION S.


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    PDF 0G23314 2SK1542 15mii 100//A O-220SM Q023b44

    2SK1506

    Abstract: SC-65 A2216 2SK1506 equivalent
    Text: 2SK1506 FUJI POWER MOS-FET IJ-CHANNEL SILICON POWER MOS-FET F-III SERIES • Featu res Outline Drawings '* High current # Low no-resistance «»Low driving power liHigh forward Transconductance 111Applications «I»Motor controllers ■iGenaral purpose power amplifier


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    PDF 2SK1506 SC-65 VOS-10V A2-216 2SK1506 SC-65 A2216 2SK1506 equivalent

    sk1507

    Abstract: 2sk1507 2sk1507 equivalent 2SK1507-01 VR BH RC
    Text: 2SK1507-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET p • Features j SERIES j Outline Drawings • High speed switching • Low on-resistance • Mo secondary breakdown • Low driving power • High voltage • V GSS = ± 30V Guarantee • Avalanche-proof


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    PDF 2SK1507-01 SC-67 00A///s A2-217 sk1507 2sk1507 2sk1507 equivalent VR BH RC

    Untitled

    Abstract: No abstract text available
    Text: 2SK1515, 2SK1516 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode trr =120 ns • Suitable for motor control, switching regulator, DC-DC converter


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    PDF 2SK1515, 2SK1516 2SK1515

    iso 1207

    Abstract: TEA-1035 2SK1596 MEI-1202
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 NEC 1 DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1596 SWITCHING N-CHANNEL POWER MOS FET


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    PDF 2SK1596 2SK1596 IEI-1209) iso 1207 TEA-1035 MEI-1202

    T0220F

    Abstract: 2sk1512 2SK1217 2SK1511 T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390
    Text: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)


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    PDF 2SK1082 2SK962 2SK1217 T03PF 2SK1512 2SK1511 2SK1008-01 T0220 2SK1010-01 T0220F T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390

    A2232

    Abstract: A-2232
    Text: 2SK1552-01L,S F U JI P O W E R M O S-FET - F-II SERIES _ _ _ _ N-CHAN NEL SILICON POWER MOS-FET • Features ■ Outline Drawings • High speed switching • Low on-resistance • Mo secondary breakdown • Low driving power


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    PDF 2SK1552-01L A2232 A-2232

    a2231

    Abstract: ups electrical symbols
    Text: 2SK1549 SIPMOS F U JI POWER M O S -FET N-CHANNEL SILICON POWER MOS-FET _ - F-I SERIES • Features IOutline Drawings • High speed switching • Low on-resistance • Low driving power • High voltage ■ Applications • Switching regulators


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    PDF 2SK1549 00A//iS A2-231 a2231 ups electrical symbols

    N CH FET 600V 9A

    Abstract: No abstract text available
    Text: 2SK1507-01M SIPMOS F U JI POWER M O S -FET N-CHANNEL SILICON POWER MOS-FET p • Features g j j £ p |£ g Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V qss = ± 3 0 V Guarantee


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    PDF 2SK1507-01M N CH FET 600V 9A