Toshiba 2SJ
Abstract: No abstract text available
Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = 200V l High forward transfer admittance : |Yfs| = 5.0 S typ. l Complementary to 2SJ201 Maximum Ratings (Tc = 25°C)
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2SK1530
2SJ201
2-21F1B
Toshiba 2SJ
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2sk1530
Abstract: 2SJ201 Toshiba 2SJ
Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High-Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 200V High forward transfer admittance : |Yfs| = 5.0 S typ. Complementary to 2SJ201 Maximum Ratings (Ta = 25°C)
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2SK1530
2SJ201
2-21F1B
2sk1530
2SJ201
Toshiba 2SJ
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2SJ20
Abstract: 2SK1530 2SJ201 Toshiba 2SJ
Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 200V High forward transfer admittance : |Yfs| = 5.0 S typ. Complementary to 2SJ201 Maximum Ratings (Ta = 25°C)
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2SK1530
2SJ201
2-21F1B
2SJ20
2SK1530
2SJ201
Toshiba 2SJ
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 200V High forward transfer admittance : |Yfs| = 5.0 S typ. Complementary to 2SJ201 Maximum Ratings (Tc = 25°C)
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2SK1530
2SJ201
2-21F1B
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2SK1530
Abstract: 2SJ201 Toshiba 2SJ
Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = 200V l High forward transfer admittance : |Yfs| = 5.0 S typ. l Complementary to 2SJ201 Maximum Ratings (Ta = 25°C)
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2SK1530
2SJ201
2-21F1B
2SK1530
2SJ201
Toshiba 2SJ
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PDF
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2SJ201
Abstract: 2SK1530 toshiba pb includes
Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 200 V z High forward transfer admittance : |Yfs| = 5.0 S typ. z Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25°C)
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2SK1530
2SJ201
2SJ201
2SK1530
toshiba pb includes
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toshiba marking code transistor
Abstract: 2SK1530 2SJ201 Toshiba 2SJ toshiba marking abbreviation transistor
Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 200V z High forward transfer admittance : |Yfs| = 5.0 S typ. z Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25°C)
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2SK1530
2SJ201
toshiba marking code transistor
2SK1530
2SJ201
Toshiba 2SJ
toshiba marking abbreviation transistor
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Toshiba 2SJ
Abstract: toshiba marking code transistor 2SK1530 toshiba
Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 200V z High forward transfer admittance : |Yfs| = 5.0 S typ. z Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25°C)
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2SK1530
2SJ201
Toshiba 2SJ
toshiba marking code transistor
2SK1530 toshiba
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2SK1530
Abstract: 2SJ201 toshiba pb includes
Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 200 V z High forward transfer admittance : |Yfs| = 5.0 S typ. z Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25°C)
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2SK1530
2SJ201
2SK1530
2SJ201
toshiba pb includes
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Untitled
Abstract: No abstract text available
Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −200 V High forward transfer admittance : |Yfs| = 5.0 S typ. Complementary to 2SK1530 Maximum Ratings (Tc = 25°C)
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2SJ201
2SK1530
2-21F1B
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2SK1530
Abstract: 2SJ201
Text: 2SK1530 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK1530 ○ 低周波電力増幅用 単位: mm z 高耐圧です。 : VDSS = 200 V z 高順方向伝達アドミタンスです。 : |Yfs| = 5.0 S 標準 z 2SJ201 とコンプリメンタリになります。
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2SK1530
2SJ201
2-21F1B
2002/95/EC)
2SK1530
2SJ201
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Untitled
Abstract: No abstract text available
Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −200 V High forward transfer admittance : |Yfs| = 5.0 S typ. Complementary to 2SK1530 Maximum Ratings (Ta = 25°C)
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2SJ201
2SK1530
2-21F1B
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2Sj201
Abstract: 2SK1530 Toshiba 2SJ 2SJ201 toshiba
Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −200 V High forward transfer admittance : |Yfs| = 5.0 S typ. Complementary to 2SK1530 Maximum Ratings (Ta = 25°C)
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2SJ201
2SK1530
2Sj201
2SK1530
Toshiba 2SJ
2SJ201 toshiba
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toshiba pb includes
Abstract: 2SJ201 2SK1530
Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −200 V z High forward transfer admittance : |Yfs| = 5.0 S typ. z Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C)
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2SJ201
2SK1530
2-21F1B
toshiba pb includes
2SJ201
2SK1530
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2SJ201
Abstract: 2SK1530 toshiba pb includes
Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −200 V z High forward transfer admittance : |Yfs| = 5.0 S typ. z Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C)
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2SJ201
2SK1530
2-21F1B
2SJ201
2SK1530
toshiba pb includes
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PDF
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2Sj201
Abstract: 2SK1530
Text: 2SJ201 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ201 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : V j gg= —200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ.) Complementary to 2SK1530
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OCR Scan
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2SJ201
-200V
2SK1530
2Sj201
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK1530 Field Effect Transistor Silicon N Channel MOS Type n-MOS II High Power Amplifier Application Features • High Breakdown Voltage - VDSS = 200V (Min.) • High Forward Transfer Admittance - 'Yfs' = 5.OS (Typ.) • Complementary to 2SJ201 • Enhancement-Mode
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2SK1530
2SJ201
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : VDgg = 200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ. Complementary to 2SJ201
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OCR Scan
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2SK1530
2SJ201
2SK1530·
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transistor 1211
Abstract: No abstract text available
Text: TOSHIBA 2SJ201 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ201 HIGH POWER AMPLIFIER APPLICATION Unit in mm • High Breakdown Voltage • High Forward Transfer Admittance : |Yfs | = 5.0S Typ. • Complementary to 2SK1530 20.5MAX. : V j ) g g = —200V
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OCR Scan
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2SJ201
--200V
2SK1530
2-21F1
transistor 1211
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SJ201 TOSHIBA FIELD EFFECT TRANSISTOR HIGH POWER AMPLIFIER APPLICATION SILICON P CHANNEL MOS TYPE 2SJ201 U nit in mm • High Breakdown Voltage • High Forward Transfer Admittance : |Yfs | = 5.0S Typ. • Complementary to 2SK1530 20.5MAX. : V ]}g g = —200V
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OCR Scan
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2SJ201
--200V
2SK1530
2-21F1B
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SJ201 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ201 HIGH POWER AMPLIFIER APPLICATION Unit in mm • High Breakdown Voltage • High Forward Transfer Admittance : |Yfs | = 5.0S Typ. • Complementary to 2SK1530 20.5MAX. : V j ) g g = —200V
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OCR Scan
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2SJ201
2SK1530
100ms;
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SJ201 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2 S J 2 Q1 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : V q ss = —200V High Forward Transfer Admittance : |Yfg| = 5.0S Typ. Complementary to 2SK1530
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OCR Scan
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2SJ201
20-5MAX.
--200V
2SK1530
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SK1530 SILICON N CHANNEL MOS TYPE HIGH POWER AM PL IF IE R AP PL IC AT IO N Unit in mm . High Breakdown Voltage 20.5MAX : Vd ss *200V MIN. ff 3.3 ±0.2 . High Forward Transfer Admittance : |Yfs | *5.0S(TYP.) . Complementary to 2SJ201
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OCR Scan
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2SK1530
2SJ201
Tc-25
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PDF
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2SK1530
Abstract: 2SJ201
Text: TOSHIBA 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : Vj gg = 200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ.) Complementary to 2SJ201
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OCR Scan
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2SK1530
2SJ201
2SK1530
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