Untitled
Abstract: No abstract text available
Text: 2SK1729 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)15 I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)-55
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2SK1729
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EN3824
Abstract: 2SK1729
Text: Ordering number:EN3824 N-Channel Silicon MOSFET 2SK1729 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. unit:mm 2087A [2SK1729] 2.5 1.45 1.0
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EN3824
2SK1729
2SK1729]
EN3824
2SK1729
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2sk3436
Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis
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TND023F
FX504
CPH5504
MCH5805
FX505
HPA72R
TND024F
FX506
MCH3301
TND024MP
2sk3436
2Sa1872
2sc6093
2SC4943
2sa1970
2SK3850
2SK1597
TT2084
2sc5267
2sk3744
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2sk3436
Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Text: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。
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40610HKPC
TC-00002289
CPH5815
MCH5815
MCH6629
MCH6649
CPH6610
CPH6614
SCH1411
SCH1436
2sk3436
2sc6093
2Sa1872
2SK1597
2SK3850
2SC5269
TT2084
2SC4943
2SC5793
2sa1970
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2SK1729
Abstract: No abstract text available
Text: O rd e rin g n u m b e r: E N 3 8 2 4 _ 2SK1729 No.3824 N-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • M eets radial taping. A b s o lu te M axim um R a tin g s a t Ta = 25°C
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EN3824
2SK1729
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2SK1729
Abstract: No abstract text available
Text: 2SK1729 2087 LD L o w D rive S eries V dss= 1 0 0 V N Channel Power M OSFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •M eets radial taping. A b so lu te M a x im u m R a tin g s a t Ta = 25°C D rain to Source V oltage
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2SK1729
32593TH
2SK1729
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2SK1723
Abstract: 2SK1708 2SK1702 2SK1700 2SK1705 2SK1720 2SK1701 2SK1718 2SK1719 2SK1699
Text: - 118 - « tt « ffl jS mm ft 'Æ f M ? V 1 K v m * * Vg s * I * * V 1* (A) « [x P d / P c h * ♦ ÍW) less (max) (A) Vg s (V) (Ta=25eC ) ft 35 Id s (min) (max) V d s (A) (A) (V) tit (V) ff) (max) V d s (V) (V) S w (inin) (S) Id (A) Id (A) Vd s (V) 2SK1698
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2SKX698
2SK1699
1699S
2SK1700
ZSK1701
2SK1702
2SK1703
1703S
50nstyp
2SK1724
2SK1723
2SK1708
2SK1705
2SK1720
2SK1701
2SK1718
2SK1719
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2SK2747
Abstract: 2SK2748 2SJ403 2SK536 2SK1467 2SJ254 2SJ255 2SJ256 2SJ263 2SJ264
Text: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta » 251C RDS(on)@ID ' VGS W Voss (V) ID (A) PD (W) Teh 0« V 6^*> RDS(on) max(Q) to |Yf»| VDS • M> (A) Vgs (V) VDS 00 to (A) 2SJ282
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Ta-25t)
2SJ282
T0220
2SJ348
2SJ478V
2SJ254
T0220ML
2SJ255
2SK2747
2SK2748
2SJ403
2SK536
2SK1467
2SJ256
2SJ263
2SJ264
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J289
Abstract: 3SK266 2SK1728 3sk251 DS-17 SANYO
Text: SAftYO Small-signal MOSFETs Feat, u r e s ♦ Very low noise figure * Large IYf s I * Low gate leak current Sma11-sized package permitting FET-used sets to be made smaller Case Out 1inesiunit:mm SANYO:CP4 x Lr Amp, Low Noise, Analog Switch Impedance Conversion Applications
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Sma11-sized
2SK1839<
2SK536
2SK1840UJ)
3SK248CNJ)
2SK669
2SK1841
2SK583
Characteristics/Ta-25X;
12/55m
J289
3SK266
2SK1728
3sk251
DS-17 SANYO
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TO-32-070
Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)
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T0220ML
TO-32-070
2SA1678
FC102
2SC4449
2SA1416
2SJ193
2sk283
2sC4106 application notes
2SC3383
FC124
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Untitled
Abstract: No abstract text available
Text: Power MOSFETs Electrical characteristic» T. » 31 °Q AtooMe mKknum ratings . Owto» _ - Pwtogi Appflcaflons m _ ' _ Voss » _ Voss w t# w 2SJ284* CP Very high-speed switch 30 ±15 0.3 2SJ285* CP Very high-speed switch 60 ±15 0.25 2SJ286* CP Very high-speed switch
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2SJ284*
2SJ286*
2SK1847
2SJ285*
2SJ233
2SK1731
2SK1732
2SK1734
2SK1735
DD14SSD
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J289
Abstract: K2171 2sj281 2SK1847 2SK1470 KD K1470 2sk669 K1311
Text: Small-signal Features MOS FETs ♦ Very low noise_ figure * Large _ |Yfs| # Low gate leak current * Small-sized packageipermitting — ' i ♦ FET-used sets to be made, smaller Case Oct 1in.es /uni I.:a SANYO :C:'4 sjc LF Amp, Low Noise, Analog Switch Impedance Conversion Applications
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3SK265
3SK266
3SK248
12/55m
2/80m
45/-/50m
130m/65m
21/90m
MT931224TR
J289
K2171
2sj281
2SK1847
2SK1470 KD
K1470
2sk669
K1311
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2SK1901
Abstract: No abstract text available
Text: 11 LO Seríes Lineup V DSS = 100V, N-channel Absolute maximum ratings at Ta =25°C Type No. 2SK1849 Package V d ss VGSS V (V) CP 2SK1473 2SK1728 % ?o‘ (A) m 0.25 0.25 t Electrical characteristics atTa = 25°C ^G S (off) min to max (V) 2.0 ^D S (on) ^D S (on)
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2SK1849
2SK1473
2SK1728
2SK1474
2SK1475
2SK1907
2SK1908
2SK1909
2SK1729
2SK1736
2SK1901
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