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    2SK201 Search Results

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    2SK201 Price and Stock

    Rochester Electronics LLC 2SK2011

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK2011 Bulk 13,507 221
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    • 1000 $1.36
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    Rochester Electronics LLC 2SK2010-CTV-YA14

    NCH 10V DRIVE SERIES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK2010-CTV-YA14 Bulk 10,850 365
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    • 1000 $0.82
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    Fuji Electric Co Ltd 2SK2018-01S

    MOSFET Transistor, N-Channel, TO-252
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK2018-01S 1,223
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    Fuji Electric Co Ltd 2SK2018-01S-TB16R

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK2018-01S-TB16R 1,090
    • 1 $1.46
    • 10 $1.46
    • 100 $0.73
    • 1000 $0.584
    • 10000 $0.584
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    onsemi 2SK2010

    4A, 250V, 0.7ohm, N-Channel MOSFET, TO-220AB '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SK2010 2,843 1
    • 1 $1.08
    • 10 $1.08
    • 100 $1.02
    • 1000 $0.918
    • 10000 $0.918
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    Find more 2SK201 price and stock on Findchips.com

    2SK201 Datasheets (46)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK201 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK201 Unknown FET Data Book Scan PDF
    2SK2010 Sanyo Semiconductor Ultrahigh-speed switching Original PDF
    2SK2010 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK2010 Sanyo Semiconductor TO-220ML, TO-220MF Type Transistors Scan PDF
    2SK2010 Sanyo Semiconductor Large Signal Power MOSFETS Scan PDF
    2SK2010 Sanyo Semiconductor Ultra High Speed Switching Transistors Scan PDF
    2SK2011 Sanyo Semiconductor N-Channel Silicon MOSFET Original PDF
    2SK2011 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK2011 Unknown Scan PDF
    2SK2011 Sanyo Semiconductor TO-220ML, TO-220MF Type Transistors Scan PDF
    2SK2011 Sanyo Semiconductor Large Signal Power MOSFETS Scan PDF
    2SK2011 Sanyo Semiconductor Ultra High Speed Switching Transistors Scan PDF
    2SK2012 Sanyo Semiconductor N-Channel Silicon MOSFET Original PDF
    2SK2012 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK2012 Unknown Scan PDF
    2SK2012 Sanyo Semiconductor TO-220ML, TO-220MF Type Transistors Scan PDF
    2SK2012 Sanyo Semiconductor Large Signal Power MOSFETS Scan PDF
    2SK2012 Sanyo Semiconductor Ultra High Speed Switching Transistors Scan PDF
    2SK2013 Toshiba N-Channel MOSFET Original PDF

    2SK201 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK245

    Abstract: 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch VDS min max 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK215 2SK216 2SK217 2SK218 2SK219 2SK220H


    Original     		PDF 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK245 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240

    2SK2012

    Abstract: No abstract text available
    Text: Ordering number:EN4321A N-Channel Silicon MOSFET 2SK2012 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SK2012]


    Original     		PDF EN4321A 2SK2012 2SK2012] O-220ML 2SK2012

    Toshiba 2SJ

    Abstract: No abstract text available
    Text: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application Unit: mm z High breakdown voltage: VDSS = −180 V z High forward transfer admittance: |Yfs| = 0.7 S typ. z Complementary to 2SK2013 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ313 2SK2013 SC-67 2-10R1B Toshiba 2SJ

    k2013

    Abstract: toshiba audio power amplifier 2-10r1b Audio Power Amplifier TOSHIBA toshiba marking code transistor 2SJ313 2SK2013 Toshiba 2SJ
    Text: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SJ313 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK2013 2SJ313 SC-67 2-10R1B K2013 k2013 toshiba audio power amplifier 2-10r1b Audio Power Amplifier TOSHIBA toshiba marking code transistor 2SJ313 2SK2013 Toshiba 2SJ

    2sk2013 2SJ313

    Abstract: No abstract text available
    Text: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SJ313 Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SK2013 2SJ313 SC-67 2-10R1B 2sk2013 2SJ313

    2SK2011

    Abstract: EN4320
    Text: Ordering number:EN4320A N-Channel Silicon MOSFET 2SK2011 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SK2011]


    Original     		PDF EN4320A 2SK2011 2SK2011] O-220ML 2SK2011 EN4320

    2SK2018-01L

    Abstract: No abstract text available
    Text: 2SK2018-01L,S N-channel MOS-FET FAP-III Series 60V > Features - 0,1Ω 10A 20W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof > Applications - Motor Control - General Purpose Power Amplifier


    Original     		PDF 2SK2018-01L

    2SJ313

    Abstract: 2SK2013 2sk2013 2SJ313
    Text: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application l High breakdown voltage : VDSS = 180V l High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm l Complementary to 2SJ313 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK2013 2SJ313 SC-67 2-10R1B 2SJ313 2SK2013 2sk2013 2SJ313

    2SK2018-01L

    Abstract: No abstract text available
    Text: 2SK2018-01L,S N-channel MOS-FET FAP-III Series 60V > Features - 0,1Ω 10A 20W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof > Applications - Motor Control - General Purpose Power Amplifier


    Original     		PDF 2SK2018-01L

    Untitled

    Abstract: No abstract text available
    Text: 2SK2011 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)30 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)48 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)2.0 Minimum Operating Temp (øC)-55


    Original     		PDF 2SK2011

    2SK2010

    Abstract: No abstract text available
    Text: Ordering num ber:EN 4319 _ 2SK2010 No.4319 N -Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • M icaless package facilitating mounting. A b so lu te M axim um R a tin g s at Ta = 25°C


    OCR Scan     		PDF 2SK2010

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K2 0 1 3 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION Unit in mm 3.2 ± 0 .2 10 ± 0 .3 • High Breakdown Voltage : V j g g = 180V • High Forward Transfer Admittance : |Yfs | = 0 .7 S Typ.)


    OCR Scan     		PDF 2SK2013 2SJ313

    2SJ83

    Abstract: 2SK238 2SJ82 2SK241 2SK240 2SK203 2SK220 2S119 2SK197 2SK198
    Text: - 38 - * . 1 fr K ft f M € tí: € 2SK197 B ÍL B ÍL 2SK198 tñ“ F 2 SK196 H 2SK199 2SK201 NEC 2SK203 NEC 2SK208 m m m £ 4 -k % Vg s * X V* m (V) * (V) 800m 2m 120 0.2 -2 10 10m G 150m -lOn -0.5 2m 14m 10 -0.3 -4 10 LF A J N D -30 GDO 10m G 150m


    OCR Scan     		PDF 2SK19600 2SK197 2SK198 2SK199 2SK201 2SK217 2SK218 2SK220 2SK221 2SS222 2SJ83 2SK238 2SJ82 2SK241 2SK240 2SK203 2S119

    v-tek

    Abstract: 2SK2019-01 T0220AB A2338
    Text: 2SK2019-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F A P -IIA SERIES O utline D raw ings I features 'high speed switching 1L^w on-resistance 'l\o secondary breakdown •L d w driving power >I- igh voltage »Vgs- ± 30V Guarantee valanche-proof I A pplications


    OCR Scan     		PDF 2SK2019-01 Tc-25Â T0220AB SC-46 20Kfl) v-tek 2SK2019-01 T0220AB A2338

    2SJ313

    Abstract: 2SK2013
    Text: 2SK2013 T O S H IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 SK2 0 1 3 U n it in mm A U D IO FREQUENCY POWER AMPLIFIER APPLICATION o M A X IM U M RATINGS Ta = 25°C SYM BOL CHARACTERISTIC Drain-Source V oltage V D SS Gate-Souree V oltage


    OCR Scan     		PDF 2SK2013 2SJ313 SC-67

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN4321A N-Channel Silicon MOSFET _ 2SK2012 m i “ Ultrahigh-Speed Switching Applications Package Dimensions Features •Lo w O N resistance. •Ultrahigh-speed switching. -Low-voltage drive. •Micaless package facilitating mounting.


    OCR Scan     		PDF EN4321A 2SK2012 2SK2012] O-220ML Curren80 0G21b0b

    2SJ313

    Abstract: 2SK2013 SC-65
    Text: TOSHIBA 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2013 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vj gg = 180 V High Forward Transfer Admittance : |Yfs| = 0.7 S Typ.) Complementary to 2SJ313


    OCR Scan     		PDF 2SK2013 2SJ313 2SK2013 SC-65

    transistor C1000 Toshiba

    Abstract: 2SJ313 2SK2013 SV125
    Text: 2SJ313 TOSHIBA 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vd SS = —180 V High Forward Transfer Admittance : |Yfs| = 0.7 S Typ. Complementary to 2SK2013


    OCR Scan     		PDF 2SJ313 2SK2013 transistor C1000 Toshiba 2SJ313 2SK2013 SV125

    2SK2018-01

    Abstract: 2SK2018-01L T151
    Text: 2SK2018-01L. S FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F • Features A P - I I I S E R I E S Outline Drawings • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance • Avalanche-proof


    OCR Scan     		PDF 2SK2018-01L. 60iisffl EgTS30 2SK2018-01 2SK2018-01L T151

    Untitled

    Abstract: No abstract text available
    Text: 2SK2019-01 F U JI P O W E R M O S-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES Outline Drawings • =eatures • H g h speed switching 03.6±O.2 • L j w on-resistance *5*0.2 • l\o secondary breakdown • L dw driving power • I-igh voltage Gale


    OCR Scan     		PDF 2SK2019-01 O-220AB 54i0-2

    Untitled

    Abstract: No abstract text available
    Text: 2SK2018-01L, S FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-III SERIES • F e a tu re s O u tlin e D ra w in g s • High current • Low on-resistance • No secondary breakdown ml • Low driving power • High forward Transconductance ri *r->


    OCR Scan     		PDF 2SK2018-01L, 20Kfi)

    Untitled

    Abstract: No abstract text available
    Text: FU JI 2SK2019-01 N-channel MOS-FET ö lL ,@ E lT L ß U E FAP-IIA Series 500V 3,5A 40W > Outline Drawing > Features - 3Q. High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications


    OCR Scan     		PDF 2SK2019-01

    2SJ313

    Abstract: MARKING SG toshiba 2SK2013 transistor marking 4D
    Text: TOSHIBA 2SJ313 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vd SS——180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ. Complementary to 2SK2013


    OCR Scan     		PDF 2SJ313 2SK2013 2SJ313 MARKING SG toshiba transistor marking 4D

    OF03

    Abstract: 2SK1263 2SK2377
    Text: Field Effect Transistors • Power F-MOS FETs Line-up Vgs =10V \ Vdss (V) \ to 60 80 100 150 170 200 250 450 500 550 600 800 900 \ (A) \ 1 A2SK2277 Mini Power 1.0 2SK2014 U Type 10 ★2SK2047 I Type a.o (Id=1.2A) ★2SK1834 220Fro ★2SK1980 N Type 7o ★ A2SK2128


    OCR Scan     		PDF A2SK2277 2SK2014 2SK2047 2SK1834 220Fro 2SK1980 A2SK2128 A2SK2125 2SK1833 2SK2509 OF03 2SK1263 2SK2377