2SK405 Search Results

Contextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: 2SK4059CT Category: Transistors /Small-Signal FETs/Junction FETs Single

Contextual Info: 2SK4059MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059MFV For ECM Unit: mm Application for compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C

2SK4059TK

Contextual Info: 2SK4059TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TK For ECM Unit: mm Rating Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Junction Temperature Tj 125 °C Tstg −55~125 °C Storage temperature range

2SK4059MFV

Contextual Info: 2SK4059MFV 東芝ジャンクション ＦＥＴ シリコンＮチャネル接合形 2SK4059MFV エレクトレットコンデンサマイクロフォン用 0.22±0.05 単位: mm 0.32±0.05 0.4 ・過渡応答性に優れる 1.2±0.05 0.8±0.05 1 0.4 1.2±0.05

2sk405 2sj115

Abstract: 2SK405
Contextual Info: i TOSHIBA FIELD EFFECT TRANSISTOR 2SK405 SILICON N CHANNEL MOS TYPE A U DIO F R EQUENCY POWER AMP L I F I E R APPLICATION. Unit in mm 1&9MAX. FEATURES: . High B r e a k down Voltage 05.2±Q2 : V[ sg=160V . High Forward Tra n s f o e r Admit t a n c e : |Yfsl=2.0S Typ.)

2sk405 2sj115

Abstract: 2SK405 2sj115 2SK405O 2SJ115/2SK405
Contextual Info: 5; wnyN3-v y^ivMOSBmnmm y six? 2SK405 .' mm o s & * • ¡ ¡ i t H : "£ •j'o • I l i J [ p I g a 7 K ^ V A - f t 0 : |Y f s | = 2 . 0 S ( . 15.9 max. 03.2±O.2 o| lo I^ / i®1 I V D g g = 160V 2 S J1 1 5 t 2. o ± g 3 + 0.3 1 .0 - a 25 a4 5 ± a 2

2SK4059MFV

Contextual Info: 2SK4059MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059MFV For ECM Unit: mm Application for compact ECM 0.22±0.05 V 10 mA Drain power dissipation Ta = 25°C PD (Note 1) 150 mW Tj 125 °C Tstg −55~125 °C Junction Temperature

2SK4059TV

Contextual Info: 2SK4059TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 Rating VGDO -20 V IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Storage temperature range

Contextual Info: 2SK4059MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059MFV For ECM Unit: mm Application for compact ECM 0.22±0.05 V 10 mA Drain power dissipation Ta = 25°C PD (Note 1) 150 mW Tj 125 °C Tstg −55~125 °C Junction Temperature

Contextual Info: 2SK4059TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TK For ECM Unit: mm Application for compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Junction Temperature

Contextual Info: 2SK4059TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 Rating 0.4 0.4 2 0.3±0.05 3 Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100

2SK4059TK

Contextual Info: 2SK4059TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TK For ECM • Application for compact ECM 0.22±0.05 Unit: mm -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Junction Temperature

Bk210

Abstract: 2SK4059TK A3375
Contextual Info: 2SK4059TK 東芝ジャンクション ＦＥＴ シリコンＮチャネル接合形 2SK4059TK エレクトレットコンデンサマイクロフォン用 単位: mm 0.22±0.05 0.9±0.1 絶対最大定格 Ta=25℃ 0.45 0.45 1.4±0.05 ・過渡応答性に優れる

Contextual Info: 45E T> • TOTVSSD 0017Ô3T ITO S H R TOSHIBA FIELD EFFECT TRANSISTOR 2SK405 SILICON N CHANNEL MOS TYPE TOSHIBA DISCRETE/OPTO AUDIO FREQUENCY POWER AMPL IF IE R APPLICATION. Unit in mm 15.9 MAX. 03.2±aa FEATURES: . High Breakdown Voltage v DSS=160V . High Forward Transfoer Admittance

mg15g1al3

Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
Contextual Info: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673

2sk405 2sj115

Abstract: 2SJ11 2SK405 2SJ115
Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR 2SJ115 SILICON P CHANNEL MOS TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. 03.2x0.2 1 5l9 MAX . FEATURES: . High Breakdown Voltage v DSS=-160V . High Forward Transfer Admittance IYf s I=2.OS Typ. . Complementary to 2SK405

2SK4059TV

Contextual Info: 2SK4059TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TV For ECM Unit: mm Application for Ultra-compact ECM Lead Pb -free 1.2±0.05 Rating 0.4 0.3±0.05 3 Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation (Ta = 25°C)

2SK4059TK

Contextual Info: 2SK4059TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TK For ECM Unit: mm Application for compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj

D1803

Abstract: 2SK4057 TO-252 MP-3ZK 2SK4057-ZK
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4057 SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK4057 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous

2SK425

Abstract: 2sk414 2sk495 2SK405 2SK500 2SK426 2SK431 2SK470 2SK424 2SK433
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SK401 2SK402 2SK403 2SK404 2SK405 2SK406 2SK407 2SK408 2SK409 2SK410 2SK411 2SK412 2SK413 2SK414 2SK415 2SK416 2SK417 2SK418

2sk405 2sj115

Abstract: 2SK405 2SJ115 2SJ115/2SK405
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK405 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. Unit in mra 0 3 . 'Z ± O . Z FEATURES: . High Breakdown Voltage VDSS=1&0V . High Forward Transfoer Admittance |Yfs]=2.0S Typ. . Complementary to 2SJ115

2N3904

Abstract: Z-47 2SA1015 2SK1529 SM12 YTFP150
Contextual Info: ALPHABETICAL INDEX 2N3904 .5 2SJ201 . 97 2N3906 . 9 2SK405 . 100 2N4123 . 13

sd 431 transistor

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4058 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK4058 is N-channel MOSFET device that features a PART NUMBER low on-state resistance and excellent switching characteristics, 2SK4058-S15-AY

Contextual Info: 2SK4059TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 Rating VGDO -20 V IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Storage temperature range