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    2SK655 Search Results

    2SK655 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK655 Panasonic N-Channel MOS FET Original PDF
    2SK655 Panasonic TRANS MOSFET N-CH 50V 0.1A 3NS-A1 Original PDF
    2SK655 Panasonic For Switching Original PDF
    2SK655 Panasonic Silicon N-Channel MOS FET Original PDF
    2SK655 Panasonic FETs, IPD, IGBTs, GaAs MMICs Original PDF
    2SK655 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK655 Unknown FET Data Book Scan PDF
    2SK655 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK655 Panasonic Silicon MOS FETs Scan PDF

    2SK655 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Silicon MOSFETs Small Signal 2SK0655 (2SK655) Silicon N-channel MOSFET Unit: mm 2.0±0.2 4.0±0.2 M Di ain sc te on na tin nc ue e/ d 0.75 max. • High-speed switching • Allowing to supply with the radial taping 15.6±0.5 • Features (0.8) (0.8) 3.0±0.2


    Original     		PDF 2SK0655 2SK655)

    Untitled

    Abstract: No abstract text available
    Text: 2SK655 Silicon MOS FETs Small Signal 2SK655 Silicon N-Channel MOS Unit : mm For switching 3.0±0.2 4.0±0.2 Radial taping possible marking 1 2 3 2.0±0.2 ● 0.7±0.1 High-speed switching +0.2 0.45–0.1 ● 15.6±0.5 • Features ■ Absolute Maximum Ratings (Ta = 25˚C)


    Original     		PDF 2SK655

    2SK655

    Abstract: SC-72
    Text: Silicon MOS FETs Small Signal 2SK655 Silicon N-Channel MOS FET For switching unit: mm 4.0±0.2 3.0±0.2 • Features Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature


    Original     		PDF 2SK655 SC-72 2SK655 SC-72

    MA408

    Abstract: No abstract text available
    Text: Silicon MOSFETs Small Signal 2SK0655 (2SK655) Silicon N-channel MOSFET Unit: mm 2.0±0.2 4.0±0.2 (0.8) 3.0±0.2 For switching circuits • Features (0.8) 0.75 max. 15.6±0.5 M Di ain sc te on na tin nc ue e/ d • High-speed switching • Allowing to supply with the radial taping


    Original     		PDF 2SK0655 2SK655) MA408

    2SK0655

    Abstract: 2SK655
    Text: Silicon MOSFETs Small Signal 2SK0655 (2SK655) Silicon N-channel MOSFET Unit: mm 2.0±0.2 4.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.8) 3.0±0.2 For switching circuits • Features (0.8) 0.75 max. 15.6±0.5 ue pl d in an c se ed lud pl vi an m m es si


    Original     		PDF 2SK0655 2SK655) 2SK0655 2SK655

    2SK0655

    Abstract: 2SK655
    Text: Silicon MOS FETs Small Signal 2SK0655 (2SK655) Silicon N-Channel MOS FET unit: mm For switching 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5 0.45+0.20 –0.10 ■ Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage


    Original     		PDF 2SK0655 2SK655) 2SK0655 2SK655

    2SK0655

    Abstract: 2SK655 SC-72
    Text: Silicon MOS FETs Small Signal 2SK0655 (2SK655) Silicon N-Channel MOS FET unit: mm 4.0±0.2 3.0±0.2 For switching • Features Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature


    Original     		PDF 2SK0655 2SK655) SC-72 2SK0655 2SK655 SC-72

    2SK0655

    Abstract: 2SK655
    Text: Silicon MOSFETs Small Signal 2SK0655 (2SK655) Silicon N-channel MOSFET Unit: mm 2.0±0.2 4.0±0.2 (0.8) 3.0±0.2 For switching circuits • Features (0.8) 0.75 max. 15.6±0.5 • High-speed switching • Allowing to supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2SK0655 2SK655) 2SK0655 2SK655

    SSSMini3-F1 transistor

    Abstract: 2SK0664 2sk60 2SK0601 2SK0614 2SK0615 2SK0655 2SK0656 2SK601 2SK614
    Text: FETs, IPD, IGBTs, GaAs MMICs • Silicon MOS FETs ● For Small Signal Application Structure Part No. Absolute Maximum Ratings Ta = 25 °C VDS ✽V VGSO ID PD DSS (V) N-ch (V) (A) 2SK0601 1 000 (2SK601) 2SK0614 (2SK614) (mW) Electrical Characteristics (Ta = 25 °C)


    Original     		PDF 2SK0601 2SK614) 2SK664) 2SK665) 2SK1228 2SK1374 2SK3539 2SK3546J 2SK3547 2SK2211 SSSMini3-F1 transistor 2SK0664 2sk60 2SK0601 2SK0614 2SK0615 2SK0655 2SK0656 2SK601 2SK614

    2SK653

    Abstract: 2SK652 2SK671 Gv-80dB 2SK674 2SK650 2SK669 150ni 2SK677 2SK649
    Text: - 60 - M £ ft ffl € & flt £ f •ç !• 4 1 H 2S K 6 4 8 m X [H# * * V æ fê ft £ * (V) * P d/Pch I gss (W) (max) (A) Vg s (V) ^ (min) (A) (max) (A) Vd s (V) W fî tt ( T a = 2 5 <C ) (min) (V) (max) V d s (V) (V) (min) (S) Id (A) (typ) V d s


    OCR Scan     		PDF 2SK648 2SK649 2SK650 2SK651 150ni 2SK652 2SK665 50MHz 2SK666 2SK765 2SK653 2SK671 Gv-80dB 2SK674 2SK669 2SK677

    2SK1216

    Abstract: 3SK139 2SJ364 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK1104 2SK374 3SK286
    Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta =25 “CÍ Package (No. Application General-use low frequency amplifier SS Mini Type S Mini Type (D1) (D5) 2SJ0385 Mini Type (D10) 2SK198 2SK374 2SK123 Capacitor microphone APreliminary


    OCR Scan     		PDF 2SJ0385 2SJ364 2SK1103 2SJ163 2SK1104 2SJ164 2SK662 2SK663 2SK198 2SK374 2SK1216 3SK139 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK374 3SK286

    2sk to-92

    Abstract: No abstract text available
    Text: Field Effect Transistors # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Digital/ analog switching Nch Pch Electrical Characteristics (Ta = 2 5 °C) Type No. V ds * V dss (V) V gso Id (V) (A) (mW) 2SK601 80 20 0.5 2SK614 80


    OCR Scan     		PDF 2SK601 2SK614 2SK615 2SK620 A2SK2276 A2SK2342 2sk to-92

    2SK620

    Abstract: 3SK268 3SK269 2SK1104 3SK286 CAMERA MOS 2SJ0385 2SJ163 2SJ164 2SJ364
    Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta=25“C Package (No.) Application Mini Type (D10) SS Mini Type S Mini Type (D 1) General-use low frequency amplifier (D 5) New S Type (D39) 2 SKIIO 3 2SJ0385 2SJ364 2SK662 2SK663


    OCR Scan     		PDF 2SJ0385 2SJ364 2SK1103 2SJ163 2SK1104 2SJ164 2SK662 2SK663 2SK198 2SK374 2SK620 3SK268 3SK269 3SK286 CAMERA MOS 2SJ164

    Untitled

    Abstract: No abstract text available
    Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta Package (No. Application (D1) General-use low frequency amplifier 2SJ0385 General-use Capacitor microphone Video camera pre-amp. Infrared sensor A2SK2380 APrelim inary Mini Type


    OCR Scan     		PDF 2SJ0385 A2SK2380 2SK1103 2SJ364 2SJ163 2SK662 2SK198 2SK663 2SK374 2SK123

    2SK2276

    Abstract: 2sk227
    Text: FET, IGBT, IPD • Silicon MOS FETs # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Type No. (mW) typ (Q> max typ* (ns) 0.5 1000 *300 2 *15 *20 Mini-Power Type D19 0.5 0.5 750 1000 150 200 *300 *300 2 2 * 15 * 15 20 20 40 40


    OCR Scan     		PDF 2SK601 2SK614 2SK615 2SK620 2SK2276 2SK2277 2SK2342 2SK2474 2SK2495 A2SK2660 2SK2276 2sk227

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


    OCR Scan     		PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202