5082-7415
Abstract: HP 5082-7415 MC144898 Light-sensitive Industrial Electronic Engineers k1 4 3n MC14504 MC14489 MC14489B Nippon capacitors
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14489B M u Iti-Character lED Display/lamp Driver CMOS p SVFFiX PLASTICOIP CASE73$ The MC144898 is a flexible light-emitting-diode driver which directly interfaces to individual lamps, 7-segment displays, or various combinations of
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MC14489B
CASE73$
MC144898
4-112-digit
MC14489
5082-7415
HP 5082-7415
Light-sensitive
Industrial Electronic Engineers
k1 4 3n
MC14504
MC14489
MC14489B
Nippon capacitors
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mc144898
Abstract: INDUSTRIAL ELECTRONIC ENGINEERS
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14489B M u Iti-Character lED Display/lamp Driver CMOS p SVFFiX PLASTICOIP CASE73$ The MC144898 is a flexible light-emitting-diode driver which directly interfaces to individual lamps, 7-segment displays, or various combinations of
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MC14489B
CASE73$
MC144898
4-112-digit
MC14489
INDUSTRIAL ELECTRONIC ENGINEERS
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2SA952L
Abstract: 2SA952K diode GP 30M 2SA666 2N330A HA7815 sot89 diode bm LOW-POWER SILICON PNP 2SA952-L G20b
Text: LOW-POWER SILICON PNP Item Number Part Number 10 >= 2N6009 BC328•16 BC328BP 2SA952L 2SB810H 2SB811H 2SBll19S 2SBl121S BC178BP BC178PBK 20 2SA950 2SA950 2SA950 2SB811F 2SB1030 BC178C BC258C KSA542 ~~~~~B 25 30 2SA952K 2SB810E BC328·25 BC328CP KSB564A 2SB811E
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2N6009
BC328
BC328BP
2SA952L
2SB810H
2SB811H
2SBll19S
2SBl121S
BC178BP
BC178PBK
2SA952K
diode GP 30M
2SA666
2N330A
HA7815
sot89 diode bm
LOW-POWER SILICON PNP
2SA952-L
G20b
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CY7C1358A
Abstract: GVT7164T18
Text: 327 CY7C1358A/ GVT7164T18 64K x 18 Synchronous Cache Tag RAM Pipelined Output Features • • • • • • • • • • • • • • Functional Description Fast match times: 4.5, 5.0, 6.0, and 7.0 ns Fast clock speed: 133, 100, 83, and 75 MHz Fast OE access times: 4.5 ns and 5.0 ns
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CY7C1358A/
GVT7164T18
100-pin
CY7C1358A/GVT7164T18
Page11
CY7C1358A
GVT7164T18
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DSK 5510
Abstract: No abstract text available
Text: TMS320VC5510 DSK Technical Reference 2002 DSP Development Systems TMS320VC5510 DSK Technical Reference 506205-0001 Rev. C October 2002 SPECTRUM DIGITAL, INC. 12502 Exchange Drive, Suite 440 Stafford, TX. 77477 Tel: 281.494.4505 Fax: 281.494.5310 sales@spectrumdigital.com www.spectrumdigital.com
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TMS320VC5510
DSK 5510
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DSK 5510
Abstract: No abstract text available
Text: TMS320VC5510 DSK Technical Reference 2002 DSP Development Systems TMS320VC5510 DSK Technical Reference 506205-0001 Rev. C October 2002 SPECTRUM DIGITAL, INC. 12502 Exchange Drive, Suite 440 Stafford, TX. 77477 Tel: 281.494.4505 Fax: 281.494.5310 sales@spectrumdigital.com www.spectrumdigital.com
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TMS320VC5510
DSK 5510
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a7 moe
Abstract: CY7C1358A GVT7164T18 0/a7 moe
Text: 327 CY7C1358A/ GVT7164T18 64K x 18 Synchronous Cache Tag RAM Pipelined Output Features • • • • • • • • • • • • • • Functional Description Fast match times: 4.5, 5.0, 6.0, and 7.0 ns Fast clock speed: 133, 100, 83, and 75 MHz Fast OE access times: 4.5 ns and 5.0 ns
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CY7C1358A/
GVT7164T18
100-pin
CY7C1358A/GVT7164T18
a7 moe
CY7C1358A
GVT7164T18
0/a7 moe
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Untitled
Abstract: No abstract text available
Text: LM5122/LM5122-Q1 Product Brief www.ti.com SNVS954A – MARCH 2013 – REVISED MARCH 2013 Wide Input Synchronous Boost Controller with Multiple Phase Capability Check for Samples: LM5122/LM5122-Q1 Product Brief FEATURES APPLICATIONS • • • • • •
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LM5122/LM5122-Q1
SNVS954A
LM5122
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marking 3U 3T 3C diode 3E 3G
Abstract: marking 3U 3T 3C diode marking 3U 3T diode GALVANTECH marking 2U 58 diode GVT7164T18
Text: ADVANCE INFORMATION GALVANTECH, INC. SYNCHRONOUS CACHE TAG SRAM PIPELINED OUTPUT GVT7164T18 64K X 18 SYNCHRONOUS TAG SRAM 64K x 18 SRAM +3.3V SUPPLY WITH CLOCKED REGISTERED INPUTS FEATURES GENERAL DESCRIPTION • • • • • • • • • • • •
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GVT7164T18
GVT7164T18
18-bit
7164T18
access/10ns
access/12ns
access/13
marking 3U 3T 3C diode 3E 3G
marking 3U 3T 3C diode
marking 3U 3T diode
GALVANTECH
marking 2U 58 diode
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CY7C1367A
Abstract: GVT71512C18
Text: CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 256K x 36/512K x 18 Pipelined SRAM Features and a 2-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input CLK . The synchronous
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CY7C1366A/GVT71256C36
CY7C1367A/GVT71512C18
36/512K
CY7C1367A
GVT71512C18
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CY7C1367A
Abstract: GVT71512C18 CY7C1367A-166AC 6n35
Text: CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 256K x 36/512K x 18 Pipelined SRAM Features • • • • • • • • • • • • • • • • • • and a 2-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input CLK . The synchronous inputs include all addresses, all data inputs, address-pipelining
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CY7C1366A/GVT71256C36
CY7C1367A/GVT71512C18
36/512K
CY7C1367A
GVT71512C18
CY7C1367A-166AC
6n35
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CY7C1325A-100AC
Abstract: gvt71256e18
Text: 325A CY7C1325A/GVT71256E18 256K x 18 Synchronous Flow-Through Burst SRAM Features • • • • • • • • • • • • • • • • The CY7C1325A/GVT71256E18 SRAM integrates 262,144x18 SRAM cells with advanced synchronous peripheral circuitry and a 2-bit counter for internal burst operation. All
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CY7C1325A/GVT71256E18
144x18
CY7C1325A/GVT71256E18
CY7C1325A-100AC
gvt71256e18
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Untitled
Abstract: No abstract text available
Text: 1CY7C1329 CY7C1360A/GVT71256D36 CY7C1362A/GVT71512D18 PRELIMINARY 256K x 36/512K x 18 Pipelined SRAM Features • • • • • • • • • • • • • • • • • • and a 2-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input CLK . The synchronous inputs include all addresses, all data inputs, address-pipelining
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1CY7C1329
CY7C1360A/GVT71256D36
CY7C1362A/GVT71512D18
36/512K
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GVT71128DA36
Abstract: GVT71256DA18
Text: ADVANCE INFORMATION GALVANTECH, INC. GVT71128DA36/GVT71256DA18 128K X 36/256K X 18 SYNCHRONOUS SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 128K x 36 SRAM 256K x 18 SRAM +3.3V SUPPLY, FULLY REGISTERED FEATURES GENERAL DESCRIPTION • • • • • The Galvantech Synchronous Burst SRAM family
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GVT71128DA36/GVT71256DA18
36/256K
GVT71128DA36
GVT71256DA18
072x36
144x18
71128DA36
71256DA18
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CY7C1363A
Abstract: GVT71256B36 GVT71512B18
Text: CY7C1361A/GVT71256B36 CY7C1363A/GVT71512B18 256K x 36/512K x 18 Synchronous Burst Flowthrough SRAM Features • • • • • • • • • • • • • • • • • • and a 2-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positiveedge-triggered Clock Input CLK . The synchronous inputs include all addresses, all data inputs, address-pipelining Chip
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CY7C1361A/GVT71256B36
CY7C1363A/GVT71512B18
36/512K
CY7C1363A
GVT71256B36
GVT71512B18
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CY7C1360A1-150AC
Abstract: CY7C1362A1 GVT71512DA18
Text: CY7C1360A1/GVT71256DA36 CY7C1362A1/GVT71512DA18 PRELIMINARY 256K x 36/512K x 18 Pipelined SRAM eral circuitry and a 2-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input CLK . The synchronous inputs include all addresses, all data inputs, address-pipelining
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CY7C1360A1/GVT71256DA36
CY7C1362A1/GVT71512DA18
36/512K
CY7C1360A1-150AC
CY7C1362A1
GVT71512DA18
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GVT71256D36B-5
Abstract: CY7C1362A GVT71512D18 7c136
Text: 1CY7C1329 CY7C1360A/GVT71256D36 CY7C1362A/GVT71512D18 PRELIMINARY 256K x 36/512K x 18 Pipelined SRAM Features • • • • • • • • • • • • • • • • • • and a 2-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input CLK . The synchronous inputs include all addresses, all data inputs, address-pipelining
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1CY7C1329
CY7C1360A/GVT71256D36
CY7C1362A/GVT71512D18
36/512K
GVT71256D36B-5
CY7C1362A
GVT71512D18
7c136
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CY7C1363A
Abstract: GVT71256B36 GVT71512B18 GVT71512B18TA-8
Text: 1CY7C1361A CY7C1361A/GVT71256B36 CY7C1363A/GVT71512B18 256K x 36/512K x 18 Synchronous Burst Flowthrough SRAM Features • • • • • • • • • • • • • • • • • • and a 2-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positiveedge-triggered Clock Input CLK . The synchronous inputs include all addresses, all data inputs, address-pipelining Chip
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1CY7C1361A
CY7C1361A/GVT71256B36
CY7C1363A/GVT71512B18
36/512K
CY7C1363A
GVT71256B36
GVT71512B18
GVT71512B18TA-8
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bosch al 60 dv
Abstract: lubriflon DEUTSCH DT04-2P bosch al 2450 dv iso vg 46 iso VG-10 bosch 0 261 200 160 BOSCH 0 261 230 BOSCH 0 261 210 330 bosch al 60 dv 14
Text: Flow Diverters Deviatori di flusso The Drive & Control Company RIE 00158/01.06 Oleodinamica LC s.r.l. Compact Directional Valves The Drive & Control Company Product Program Programma Prodotti - Flow Diverters - Deviatori di Flusso RIE 00158 - Modular Directional Valves
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GVT71256D18
Abstract: No abstract text available
Text: GALVANTECH, INC. GVT71256D18 256K X 18 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 256K x 18 SRAM +3.3V SUPPLY, FULLY REGISTERED INPUTS AND OUTPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • The Galvantech Synchronous Burst SRAM family
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GVT71256D18
GVT71256D18
144x18
71256D18
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GVT71256B18
Abstract: No abstract text available
Text: GALVANTECH, INC. GVT71256B18 256K X 18 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM FLOW-THROUGH 256K x 18 SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • • • • • • The Galvantech Synchronous Burst SRAM family
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GVT71256B18
GVT71256B18
144x18
71256B18
access/10ns
access/11ns
access/20ns
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3n214
Abstract: 3n215 3N217
Text: TYPES 3N 2U THRU 3N217 N-CHANNEL DEPLETION-TYPE INSULATED-GATE FIELD-EFFECT TRANSISTORS B U L L E T I N N O . D L -S 7 3 1 1 9 9 1 . M A R C H 1 9 7 3 DIODE-PROTECTED DEPLETION-TYPE MOS SILICON TRANSISTORS For Low-Power Chopper or Switching Applications •
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3N217
3IM214)
3n214
3n215
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74FCT842A
Abstract: No abstract text available
Text: FCT Interface Logic HARRIS S E M I C O N D U C T O R HARRIS RCA GE INTERSIL CD54/74FCT841 A, CD54/74FCT841BT C D54/74FCT842A, CD54/74FCT842BT July 1990 10-Bit Transparent Latch, 3-S tate CD54/74FCT841 A, CD54/74FCT841BT - Non-Inverting CD54/74FCT842A, CD54/74FGT842BT - Inverting
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CD54/74FCT841
CD54/74FCT841BT
D54/74FCT842A,
CD54/74FCT842BT
10-Bit
CD54/74FCT842A,
CD54/74FGT842BT
FCT841A)
74FCT842A
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2U 3N diode
Abstract: s2851 crystal oscillator 043b te923 DIODE RK 306 rnv identification device rfid S-2851 rf power detector voltage doubler
Text: Thaï H EW LETT" m LftM PACKARD Surface M ount Zero B ias Schottky D etector D iodes Technical D ata HSMS-285X Series Features * S u rface M ount SOT-23/ SOT-143 P a c k a g e • H ig h D e te c tio n S en sitiv ity : 40 mV/|iW a t 915 MHz 30 mV/jiW a t 2,45 GHz
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HSMS-285X
OT-23/
OT-143
OT-23
OT143
5963-2333E
5963-5030E
2U 3N diode
s2851
crystal oscillator 043b
te923
DIODE RK 306
rnv identification device rfid
S-2851
rf power detector voltage doubler
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PDF
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