400v 20 amp mosfet
Abstract: OM9001SS OM9002SS OM9003SS OM9004SS
Text: OM9001SS OM9003SS OM9002SS OM9004SS POWER MOSFET AND HIGH EFFICIENCY RECTIFIER IN A SINGLE HERMETIC ISOLATED SIP PACKAGE 100V Thru 500V, Up To 30 Amp, N-Channel MOSFET With Back To Back Zener Gate Clamp Protection And Uncommitted Ultra-Fast Recovery 35 To 50 nsec Rectifier
|
OCR Scan
|
PDF
|
OM9001SS
OM9003SS
OM9002SS
OM9004SS
MIL-S-19500,
150DIA-
400v 20 amp mosfet
OM9004SS
|
T045
Abstract: NSP6191
Text: NSP6191 PRELIMINARY MEDIUM-POWER PNP SILICON TRANSISTORS .designed for switching and wide band amplifier applications. • • • LOW C O L L EC T O R -E M IT TE R SATURATION VOLTAGE DC CURRENT GAIN SPEC IFIED T O S AM PERES EX CELLEN T SAFE O PERA TIN G AREA
|
OCR Scan
|
PDF
|
NSP6191
O-257AA
NSP6191
40Vdc,
300ns,
T045
|
Untitled
Abstract: No abstract text available
Text: A dvanced R ow er Te c h n o lo g y 8 D2S7T0T Q00174Ô 301 • SBL3030PT thru SBL3060PT VOLTAGE 30 AMP RANGE 3 0 t o 6 0 V o lts SCHOTTKY BARRIER RECTIFIERS CURRENT 30 Am peres FEATURES TO-3P 645 16.4 Plastic package has U/L Flammability Classification 94V-0
|
OCR Scan
|
PDF
|
Q00174Ô
SBL3030PT
SBL3060PT
MIL-PRF-19500
250oC
|
3l4 diode
Abstract: No abstract text available
Text: International llQRlRectifier PD- 9.1311 IRFZ34NS P R E L IM IN A R Y HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating T emperature Fast Switching Fully Avalanche Rated V dss = 5 5 V
|
OCR Scan
|
PDF
|
IRFZ34NS
D0533T4
3l4 diode
|
Untitled
Abstract: No abstract text available
Text: FAIRCHILD February 1997 SEM ICONDUCTO R NDS8410S Single N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell
|
OCR Scan
|
PDF
|
NDS8410S
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY MEDIUM-POWER PNP SILICON TRANSISTORS .designed for switching and wide band amplifier applications. • • • LOW COLLECTOR-EMITTER SATURATION VOLTAGE DC CURRENT GAIN SPECIFIED TO S AMPERES EXCELLENT SAFE OPERATING AREA M AXIMUM RATINGS* RATINGS
|
OCR Scan
|
PDF
|
NSP6191
|
IRF013
Abstract: D33A power MOSFET IRF610 1RF610 irf610 samsung irf610 mosfet IRF61Q irf610 613 33A
Text: N-CHANNEL POWER MOSFETS IRF610/611/612/613 FEATURES TO-220 • Lower R d s ON • Improved inductive ruggedness • Fast switching times • • • • Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
|
OCR Scan
|
PDF
|
IRF610/611/612/613
O-220
IRF610
IRF611
IRF612
IRF613
IRF013
D33A
power MOSFET IRF610
1RF610
irf610 samsung
irf610 mosfet
IRF61Q
613 33A
|
5109d
Abstract: No abstract text available
Text: 7 9 6 4 142 SAMSUNG SEMICONDUCTOR Ifl DE I 7 ^ 4 1 4 5 98D 0 51 09 TNO 0 0 0 5 1 0 e] 3 D f-rj?-// N-CHANNEL POWER MOSFETS IRF320/321/322/323 FEATURES • LOW RoS on • • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
|
OCR Scan
|
PDF
|
000510e
IRF320/321/322/323
IRF321
IRF322
IRF323
00GS435
5109d
|
IRFR012
Abstract: No abstract text available
Text: IRFR010/12/14/15 IRFU010/12/14/15 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • D-PACK L o w e r R ds ON Im p ro v e d in d u c tiv e ru g g e d n e s s F a s t s w itc h in g tim e s R u g g e d p o ly s ilic o n g a te c e ll s tr u c tu r e
|
OCR Scan
|
PDF
|
IRFR010/12/14/15
IRFU010/12/14/15
IRFR010/01
IRFR01
010/U
2/U01
4/U01
IRFR012
|
rectifier diode 20 amp 800 volt
Abstract: OM4202NC OM4202SC "Dual Schottky Rectifier" Schottky Doubler 1.5A COMMON CATHODE OM4202S
Text: OM42Q2SC/RC/DC HERMETIC TO-258AA DUAL POWER SCHOTTKY RECTIFIER FEATURES • • • • • • • • • Very Low Forward Voltage Low Recovery Charge Rugged Package Design, JEDEC TO-258AA High Efficiency For Low Voltage Supplies 45V Blocking @ Rated Tjmax
|
OCR Scan
|
PDF
|
OM42Q2SC/RC/DC
O-258AA
O-258AA)
OM4202NC)
MIL-S-19500,
OM4202SC
534ST76
rectifier diode 20 amp 800 volt
OM4202NC
"Dual Schottky Rectifier"
Schottky Doubler
1.5A COMMON CATHODE
OM4202S
|
2N6726
Abstract: 2N6714 2N6727 SE192 TRANSITON
Text: Silicon Planar Medium Power Transistors 2N6715 2N6727 NPN 2N6714 PNP 2N6726 FEATU RES • Exceptional p ow er dissipation capability -2 W @ T case = 25°C - 1 W @ T amb = 2 5 ° C • h FE specified up to 1A • L o w saturation volatages D E S C R IP T IO N
|
OCR Scan
|
PDF
|
2N6714
2N6726
2N6715
2N6727
SE192
2N6726
2N6727
SE192
TRANSITON
|
ZVP0120L
Abstract: ZVP P-channel
Text: PLESSEY s e n i c o n d / d i s c r e t e TS 7220533 P L E S S EY S E M I C O N D /D ISCRETE D F § ? a E D S 3 3 0 0 0 S 7 4 CJ 3 95D 0 5 7 4 9 D T - J7-zr P-channel enhancement mode vertical DMOS FET ZVP0120 FEATURES • Compact geometry • Fast sw itching speeds
|
OCR Scan
|
PDF
|
000S74C
ZVP0120
D00S7S3
0D05754
G-256
G-257
G-258
ZVP0120L
ZVP P-channel
|
um 741
Abstract: LS 741 a 741 j
Text: N-CHANNEL POWER MOSFETS IRFS740/741/742/743 FEATURES • • • • • • • Lower Rds O N Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability
|
OCR Scan
|
PDF
|
IRFS740/741/742/743
IRFS741
IRFS740
IRFS742
IRFS743
um 741
LS 741
a 741 j
|
K*D1691
Abstract: 2A 80v complementary transistor ts 4142 AGQF KSB1151 KSD1691 KSD986
Text: IME D | 7*^4145 0ÛQ7L5S *1 | NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD986 SAMS UN G SEMICONDUCTOR INC T-33-29 V - #- LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Ta=25°C Rating Unit 150 80 8.0 ±1.5 ± 3 .0
|
OCR Scan
|
PDF
|
KSD986
T-33-29
O-126
300fjs,
KSD1691
T-33-Cfl
K*D1691
2A 80v complementary transistor
ts 4142
AGQF
KSB1151
KSD986
|
|
|
EPITAXX ETX 300
Abstract: EPITAXX EPITAXX ETX 75 EPITAXX ETX 100 RFC 2 ETX1300FJ LED pigtailed
Text: EPITAXX INC SDE J> • 33b040b OOOQlbfl 1 « E P X -p<//-07 ETX 1 3 0 0 RFC, ETX 1 3 0 0 RST EPITAXX ETX1300FJ' ETX1300FC 1300 nm High Power ELED Modules Features ■ High coupled pow er 75 |iW typical into multimode ■ High speed response (3.5 ns typical)
|
OCR Scan
|
PDF
|
33b040b
1300RFC,
1300RST
ETX1300FJ
1300FC
1300RFC
1300FJ-S
1300FC-M
EPITAXX ETX 300
EPITAXX
EPITAXX ETX 75
EPITAXX ETX 100 RFC 2
LED pigtailed
|
irfp254
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFETS IRFP254/255 FEATURES • • • • • • • • Lower Ros <o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability
|
OCR Scan
|
PDF
|
IRFP254/255
O-220
IRF254
IRF255
irfp254
|
Untitled
Abstract: No abstract text available
Text: <=p ;> G e n e r a l \J S e m ic o n d u c t o r GFB7030BL N-Channel Logic Level Enhancement-Mode MOSFET VdS 3 0 V cBds<ON 9 mQ I d 6 0 A O % -.vT1 G o- TO-263AB 0.160 4.06) 0.190 (4.83) 0.380(9.65) 0.420 (10.67) 0.045(1.14) 0.055(1.40) 0.21 (5.33) I*- Min. -*•{
|
OCR Scan
|
PDF
|
GFB7030BL
O-263AB
O-263
300fjs,
|
aX 010
Abstract: 2N6693 JS 027
Text: ,lk 2N6676 2N6677 2N6678 2N6691 2N6692 2N6693 General 3 ^ Semiconductor ^ « Industries, Inc. HIGH POWER NPN twitch P/iff TRANSISTORS NPN 300, 350, 400V 15 A M P S W IT C H IN G t, — 300ns T Y P IC A L This rugged series o f NPN tra n s ito rs is designed fo r high speed s w itch in g
|
OCR Scan
|
PDF
|
2N6676
2N6677
2N6678
2N6691
2N6692
2N6693
2N6676-78
2N6691-93
-61/lso
aX 010
2N6693
JS 027
|
GES2222
Abstract: No abstract text available
Text: Ql SOLID STATE Ö F |3fl7S 0fil 3875081 G E SOLID STATE □ 0 1 7 clt.a 7 01E 17962 D 3^1 Signal Transistors 1 GES2221, GES2222, MPS2222, PN2222 Silicon Transistors Features: • Performance comparable to hermetic units * High Gain ■ Low VCE SAT ■ High Frequency
|
OCR Scan
|
PDF
|
GES2221,
GES2222,
MPS2222,
PN2222
GES2222
MPS2222
GES2221
|
Untitled
Abstract: No abstract text available
Text: OM6219SP1 OM6221SP1 OM622QSP1 OM6222SP1 DUAL UNCOMMITTED POWER MOSFETS IN LOW PROFILE PLASTIC POWER PACKAGE 100V Thru 1000V. Up To 30 Amp, N-Channel M O SFETs With Low Ros on Characteristics FEATURES Isolated High Density Package High Current Dual MOSFETs
|
OCR Scan
|
PDF
|
OM6219SP1
OM6221SP1
OM622QSP1
OM6222SP1
|
power transistors table
Abstract: 2N3419 2N3421 BFX34 BSV64 BUX34 BUY81 BUY82 BUY90 BUY91
Text: NPN HIGH CURRENT SWITCHING TA B LE 11-N P N SILICO N PLA N A R HIGH CU R R EN T SW ITCHIN G TR A N SIST O R S < The transistors shown in this table are designed for high current, high dissipation switching applications in Industrial and Military equipments.
|
OCR Scan
|
PDF
|
11-NPN
BUY82
BUY92
BUY82
BUY91
BUY81
BUY90
BUY80
300fjs
power transistors table
2N3419
2N3421
BFX34
BSV64
BUX34
BUY81
|
kp531
Abstract: IS551
Text: ZVN4424A/C SPICE PARAMETERS * Z V N 4 4 2 4 M O D E L L A S T R E VIS IO N 1/94 .S U B C K T Z V N 4 4 2 4 30 40 50 * N O D E S : DRAIN G A T E S O U R C E M 1 30 20 50 50 M O D 1 L=1 W = 1 RG 40 20 200 RL 30 50 2 4 0 E 6 D1 50 30 DIODE1 . M O D E L M O D 1 N M O S VT0=1 .25 R S = 2 .3 4 R D = 1 .634 IS=1 E-15 KP=5.31 9
|
OCR Scan
|
PDF
|
ZVN4424A/C
6E-13
kp531
IS551
|
IRF520
Abstract: irf520 mosfet mosfet irf520 irf521 power MOSFET IRF520
Text: N-CHANNEL POWER MOSFETS IRF520/521/522/523 FEATURES • • • • • • • TO-220 Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
|
OCR Scan
|
PDF
|
IRF520/521/522/523
O-220
IRF520
IRF521
IRF522
IRF523
IRF520/521Z522/523
irf520 mosfet
mosfet irf520
power MOSFET IRF520
|
40N20
Abstract: 40N15 ssm40n15
Text: S AMS UNG SEMICONDUCTOR INC Tfl DE I 7 ^ 4 1 4 2 SSM40N15/40N20 SSH40N15/40N20 0005304 POWER MOSFETS Preliminary Specifications PRODUCT SUMMARY 150 Volt, 0.08 Ohm SFET Part Num ber V ds RoS on Id SSM 40N15 150V 0 .0 8 0 40A SSM 40N20 200V 0 .0 8 0 40A SSH40N15
|
OCR Scan
|
PDF
|
SSM40N15/40N20
SSH40N15/40N20
40N15
40N20
SSH40N15
SSH40N20
F--13
ssm40n15
|