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    300V SWITCHING TRANSISTOR Search Results

    300V SWITCHING TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    300V SWITCHING TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IGBTs Transistors

    Abstract: Discrete IGBTS IXGH60N30C3 solar inverters comparison IGBT ac switch circuit TO247AD IXGH100N30C3 TO-247ad IXGH120N30C3 300v
    Text: IXYS POWER Efficiency through Technology NE W PR O D UCT B R I E F 300V GenX3 IGBTs Next Generation of High Speed C3 Class PT IGBTs JANUARY 2008 OVERVIEW IXYS has introduced a new family of high speed 300V Insulated Gate Bipolar Transistors “IGBTs” called GenX3™. These 300V GenX3 IGBTs offer switching capabilities up to


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    O-247 IXGH100N30C3 IGBTs Transistors Discrete IGBTS IXGH60N30C3 solar inverters comparison IGBT ac switch circuit TO247AD TO-247ad IXGH120N30C3 300v PDF

    SOT-23 MOSFET P-CHANNEL a1 1- mark

    Abstract: No abstract text available
    Text: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description ►► 300V breakdown voltage ►► Integrated gate-to-source resistor ►► Integrated gate-to-source Zener diode ►► Low input capacitance ►► Fast switching speeds


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    LP1030D LP1030D DSFP-LP1030D A031414 SOT-23 MOSFET P-CHANNEL a1 1- mark PDF

    BUX99

    Abstract: 250V transistor npn 2a 300V switching transistor 300V transistor npn 2a NPN Transistor 1A 400V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX99 DESCRIPTION •High Collector Current-IC= 1.5A ·High Collector-Emitter Sustaining Voltage: VCEO SUS = 300V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in fast switching applications


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    BUX99 -40mA BUX99 250V transistor npn 2a 300V switching transistor 300V transistor npn 2a NPN Transistor 1A 400V PDF

    2N6674

    Abstract: NPN Transistor 10A 400V 2N6675 300V transistor npn 2a
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N6674/6675 DESCRIPTION •High Power Dissipation ·High Switching Speed ·Collector-Emitter Breakdown Voltage: V BR CEO= 300V(Min)- 2N6674 = 400V(Min)- 2N6675 APPLICATIONS Designed for high voltage switching applications such as:


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    2N6674/6675 2N6674 2N6675 2N6674 NPN Transistor 10A 400V 2N6675 300V transistor npn 2a PDF

    2SK2739

    Abstract: No abstract text available
    Text: Transistors Switching 300V, 16A 2SK2739 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure


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    2SK2739 2SK2739 PDF

    2sc4544

    Abstract: TV power transistor datasheet color tv HORIZONTAL DRIVER TRANSISTOR
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4544 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 300V(Min) ·Small Collector Ouptut Capacitance APPLICATIONS ·High voltage switching and amplifier applications.


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    2SC4544 2sc4544 TV power transistor datasheet color tv HORIZONTAL DRIVER TRANSISTOR PDF

    MPSA92M

    Abstract: pnp transistor 300v
    Text: UTC MPSA92M PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-300V *Collector Dissipation: Pc max =625mW *Low collector-Emitter saturation voltage 1 APPLICATIONS *Telephone switching *High voltage switch TO-92


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    MPSA92M -300V 625mW QW-R201-020 MPSA92M pnp transistor 300v PDF

    MPSA92M

    Abstract: No abstract text available
    Text: UTC MPSA92M PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-300V *Collector Dissipation: Pc max =625mW *Low collector-Emitter saturation voltage 1 APPLICATIONS *Telephone switching *High voltage switch TO-92


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    MPSA92M -300V 625mW QW-R201-020 MPSA92M PDF

    D44TD3

    Abstract: 300V transistor npn 2a NPN Transistor 600V 1.5v vce 500v NPN Transistor D44TD4 D44TD5
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors D44TD3/4/5 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 300V(Min)- D44TD3 = 350V(Min)- D44TD4 = 400V(Min)- D44TD5 ·High Switching Speed ·Low Saturation Voltage


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    D44TD3/4/5 D44TD3 D44TD4 D44TD5 D44TD3 300V transistor npn 2a NPN Transistor 600V 1.5v vce 500v NPN Transistor D44TD4 D44TD5 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MPSA92M PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-300V *Collector Dissipation: Pc max =625mW *Low collector-Emitter saturation voltage 1 APPLICATIONS *Telephone switching *High voltage switch TO-92


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    MPSA92M -300V 625mW CHSA92M PDF

    NPN Transistor 450v 1A

    Abstract: 300V switching transistor 3V to 300V dc dc converter 60 w 220v 1A 2N6738 300V transistor npn 2a
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6738 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 300V(Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are particularly suited for 115


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    2N6738 NPN Transistor 450v 1A 300V switching transistor 3V to 300V dc dc converter 60 w 220v 1A 2N6738 300V transistor npn 2a PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SC2482 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR APPLICATIONS *HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS *COLOR TV HORIZ. DRIVER APPLICATIONS *COLOR TV CHROMA OUTPUT APPLICATIONS 1 FEATURES *High Voltage :V BR CEO= 300V


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    2SC2482 O-92NL 100ms* 500ms* QW-R211-015 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SC2482 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR APPLICATIONS *HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS *COLOR TV HORIZ. DRIVER APPLICATIONS *COLOR TV CHROMA OUTPUT APPLICATIONS 1 FEATURES *High Voltage :V BR CEO= 300V


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    2SC2482 O-92NL QW-R211-015 PDF

    2SC2482

    Abstract: common collector amplifier applications ce20v vc20e
    Text: UTC 2SC2482 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR APPLICATIONS *HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS *COLOR TV HORIZ. DRIVER APPLICATIONS *COLOR TV CHROMA OUTPUT APPLICATIONS 1 FEATURES *High Voltage :V BR CEO= 300V


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    2SC2482 O-92NL QW-R211-015 2SC2482 common collector amplifier applications ce20v vc20e PDF

    3V to 350V dc dc converter

    Abstract: 3V to 300V dc dc converter NPN Transistor 10A 400V BUX17 NPN Transistor 10A 400V to 92 BUX17B 300V transistor npn 2a BUX17A BUX17C DC DC converter 5v to 400V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUX17/A/B/C DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 150V(Min)- BUX17 = 250V(Min)- BUX17A = 300V(Min)- BUX17B = 350V(Min)- BUX17C ·High Switching Speed


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    BUX17/A/B/C BUX17 BUX17A BUX17B BUX17C 3V to 350V dc dc converter 3V to 300V dc dc converter NPN Transistor 10A 400V BUX17 NPN Transistor 10A 400V to 92 BUX17B 300V transistor npn 2a BUX17A BUX17C DC DC converter 5v to 400V PDF

    BD307

    Abstract: BU306 9v dc motor BU306F BU307F transistor 400v BD306 300V transistor npn 2a NPN Transistor 1A 400V transistor b 40 Ic-5A datasheet
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU306F/307F DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 300V(Min)- BD306F 400V(Min)- BD307F ·Collector Current-8A APPLICATIONS ·Designed for use in switching regulators, inverters, motor


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    BU306F/307F BD306F BD307F BU306F BU307F BD307 BU306 9v dc motor BU306F BU307F transistor 400v BD306 300V transistor npn 2a NPN Transistor 1A 400V transistor b 40 Ic-5A datasheet PDF

    voltage regulator IC 723

    Abstract: MJE13006 6221 ic IC 723 voltage regulator applications
    Text: MJE13006 NPN POWER TRANSISTORS 300 VOLTS 8 AMP, 80 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. COLLECTOR Features: • v CEO sus = 300V (Min). • VCEV = 600V blocking capability


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    MJE13006 t0-220ab voltage regulator IC 723 MJE13006 6221 ic IC 723 voltage regulator applications PDF

    mje13008

    Abstract: C735
    Text: MJE13008 NPN POWER TRANSISTORS 300 VOLTS 12 AMP, 100 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. NPN COLLECTOR Features: • VCEO sus = 300V (Min). • VCEV = 600V blocking capability


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    MJE13008 mje13008 C735 PDF

    TD 716

    Abstract: MJE13004
    Text: MJE13004 NPN POWER TRANSISTORS 300 V O LTS 4 AMP, 75 W ATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. Features: • VcEO sus = 300V (Min). • VcEV = 600V blocking capability • Excellent switching time: tr = 0.7 /¿s (Max.),


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    MJE13004 T0-220AB TD 716 MJE13004 PDF

    KTC3207

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KTC3207 TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE SWITCHING APPLICATION. COLOR TV HORIZONTAL DIRVER APPLICATION. COLOR TV CHROMA OUTPUT APPLICATION. FEATURES • High Voltage : V Br ceo =300V . • Small Collector Output Capacitance


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    KTC3207 KTC3207 PDF

    TRANSISTOR 300v

    Abstract: No abstract text available
    Text: OPTEK TECHNOLOGY INC 4fiE D • b7Tfl5flD 00013^4 bZS ■ Product Bulletin OTC433Ü August 1990 OTK '^ |/> — - — - T - y 7 - i S Fast Switching PNP Power Transistor Type OTC433Q - 300V, 20A


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    OTC433Ü OTC433Q OTC4530 -150V, 300nsec, TRANSISTOR 300v PDF

    2SK2739

    Abstract: No abstract text available
    Text: Transistors Switching 300V, 16A 2SK2739 •F e a tu re s 1) Low on-res¡stance. 2) High-speed switching. 3) Wide SOA (safe operating area). External dimensions (Units: mm) 4) Gate-source voltage guaranteed at V gss = ± 3 0 V 5) Easily designed drive circuits.


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    2SK2739 O-220FN 2SK2739 PDF

    OTC4330

    Abstract: 2N6563 2N6561 OTC4530 OTC453Q SVT7600 SVT7601 SVT7602
    Text: MAE D OPTEK TECHNOLOGY INC bTTfiSaO ODDlHfl? 4TS • OTK ■ ProductBulMlnQTC4530 duct Built August 1990 U K Ifc K Fast Switching NPN Power Transistor Type OTC453Q T-ss-n 300V, 30 A ■ a Applications • High Frequency Switching Regulators • Class "D" Amplifiers and Converters


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    OTC4530 OTC453Q OTC4330 Vcc-150V, 300nsec, 2N6561, 2N6563, SVT7600, SVT7601, OTC4330 2N6563 2N6561 SVT7600 SVT7601 SVT7602 PDF

    2N6563

    Abstract: OTC4330 2N6561 OTC453Q SVT7600 SVT7601 SVT7602
    Text: OPTEK TECH NOL OGY INC MflE D L^aSâO WË 00D13fl7 MIS • OTK U F I hK Product Bulletin OTC4530 August1990 Fast Switching NPN Power Transistor Type OTC453Q T 3s n 300V, 30 A Applications • High Frequency Switching Regulators • Class "D" Amplifiers and Converters


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    00D13fl7 OTC453Q OTC453Q OTC4330 VCE-10V 300nsec, 2N6561, 2N6563, SVT7600, 2N6563 OTC4330 2N6561 SVT7600 SVT7601 SVT7602 PDF