6045pt
Abstract: MBR6050PT-60100PT PT-60 MBR60XXPT
Text: MBR6035PT - MBR60100PT CREAT BY ART Pb 60.0AMPS. Schottky Barrier Rectifiers TO-3P/TO-247AD RoHS COMPLIANCE Features UL Recognized File # E-326243 Plastic material used carriers Underwriters Laboratory Classification 94V-0 Metal silicon junction, majority carrier conduction
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MBR6035PT
MBR60100PT
O-3P/TO-247AD
E-326243
MBR6035PT-6045PT
MBR6035PT-MBR6045PT
MBR6050PT-MBR60100PT
6045pt
MBR6050PT-60100PT
PT-60
MBR60XXPT
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MBR40200
Abstract: MBR 40150 MBR40150 4045 pt
Text: MBR4035PT - MBR40200PT CREAT BY ART Pb 40.0AMPS. Schottky Barrier Rectifiers TO-3P/TO-247AD RoHS COMPLIANCE Features UL Recognized File # E-326243 Plastic material used carriers Underwriters Laboratory Classification 94V-0 Metal silicon junction, majority carrier conduction
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MBR4035PT
MBR40200PT
O-3P/TO-247AD
E-326243
O-3P/TO-247AD
300us
MBR40150PT-40200PT
MBR4035PT-MBR4045PT
MBR4050PT-MBR4060PT
MBR4090PT-MBR40200PT
MBR40200
MBR 40150
MBR40150
4045 pt
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PDF
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3040PT
Abstract: SR3050PT-3060PT SR-3090 SR3090PT SR30100
Text: SR3020PT - SR30150PT CREAT BY ART 30.0AMPS. Schottky Barrier Rectifiers TO-3P/TO-247AD Pb RoHS COMPLIANCE Features UL Recognized File # E-326243 Dual rectifier construction, positive center-tap Plastic package has Underwriters Laboratory Flammability Classifications 94V-0
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SR3020PT
SR30150PT
O-3P/TO-247AD
E-326243
260oC/10
SR30150PT
SR3090PT-30100PT
WIDTH-300uS
SR3050PT-3060PT
SR3020PT-3040PT
3040PT
SR-3090
SR3090PT
SR30100
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PDF
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Untitled
Abstract: No abstract text available
Text: MBR3035PT thru MBR3060PT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation
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MBR3035PT
MBR3060PT
2002/95/EC
2002/96/EC
O-247AD
2011/65/EU
2002/95/EC.
2011/65/EU.
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PDF
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Untitled
Abstract: No abstract text available
Text: MBR4035PT thru MBR4060PT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability 3 2 • High frequency operation
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MBR4035PT
MBR4060PT
2002/95/EC
2002/96/EC
O-247AD
2011/65/EU
2002/95/EC.
2011/65/EU.
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PDF
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sm58a
Abstract: DO215AA EIA 481-C RGP10E DO-221
Text: Packaging Information www.vishay.com Vishay General Semiconductor Packaging Information PACKAGING ORDERING CODE PREFERRED ANTI-STATIC PACKAGE CODE PACKAGE CODE 51 PACKAGING DESCRIPTION Bulk 52, 52T P DO-214AA SMB /DO-215AA (SMBG), 12 mm tape, 7" diameter plastic reel
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DO-214AA
/DO-215AA
DO-218AB
DO-218AB,
481-C
08-Aug-12
sm58a
DO215AA
EIA 481-C
RGP10E
DO-221
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PDF
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SBL3040PT
Abstract: JESD22-B102 J-STD-002 SBL3030PT SBL3040PT diode
Text: SBL3030PT & SBL3040PT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation
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SBL3030PT
SBL3040PT
2002/95/EC
2002/96/EC
O-247AD
11-Mar-11
SBL3040PT
JESD22-B102
J-STD-002
SBL3030PT
SBL3040PT diode
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PDF
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50n60b
Abstract: 50n60 50N6 IXGH50N60B
Text: HiPerFASTTM IGBT IXGH IXGK IXGT IXGJ 50N60B 50N60B 50N60B 50N60B VCES IC25 = 600 = 75 = 2.3 VCE sat tfi(typ) = 120 V A V ns TO-247 AD (IXGH) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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50N60B
O-247
O-247AD
728B1
50n60b
50n60
50N6
IXGH50N60B
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PDF
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TO247AD
Abstract: TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247
Text: IXKR 40N60C CoolMOS Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ D G Preliminary data S ISOPLUS 247TM E153432 MOSFET Conditions
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40N60C
ISOPLUS247TM
247TM
E153432
TO247AD
TO247AD package
40n60c
CoolMOS Power Transistor
ISOPLUS247
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PDF
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12N100A
Abstract: 12n100 IXGH12N100 IXGH12N100A
Text: Low VCE sat IGBT High Speed IGBT Symbol Test Conditions VCES IXGH 12N100 IXGH 12N100A Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C
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12N100
12N100A
O-247AD
Mounti00
IXGH12N100/A
IXGH12N100U/AU1
12N100A
12n100
IXGH12N100
IXGH12N100A
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PDF
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35N120
Abstract: No abstract text available
Text: IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20
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247TM
35N120BD1
728B1
35N120
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IXGR40N60
Abstract: 40n60 40N60c 40N60CD1 IXGR40N60CD1
Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60C IXGR 40N60CD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 75 A = 2.5 V = 75 ns Preliminary Data Sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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ISOPLUS247TM
40N60C
40N60CD1
IC110
E153432
728B1
IXGR40N60
40n60
40N60c
IXGR40N60CD1
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PDF
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32N60B
Abstract: 32n60 32N60BD1 D25VF IXGH32N60B
Text: HiPerFASTTM IGBT IXGH 32N60B IXGT 32N60B IXGH 32N60BD1 IXGT 32N60BD1 VCES IC25 VCE sat tfi(typ) = 600 V = 60 A = 2.3 V = 85 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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32N60B
32N60BD1
O-247
O-268
32N60B
32n60
32N60BD1
D25VF
IXGH32N60B
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PDF
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IRGPC40S
Abstract: No abstract text available
Text: PD - 9.692 IRGPC40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 1.8V
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IRGPC40S
400Hz)
IRGPC40S
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Untitled
Abstract: No abstract text available
Text: MBR2035PT thru MBR20200PT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and
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MBR2035PT
MBR20200PT
E-326243
2011/65/EU
2002/96/EC
O-247AD
AEC-Q101
JESD22-B102
D1309026
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PDF
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Untitled
Abstract: No abstract text available
Text: SiHW30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single APPLICATIONS
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SiHW30N60E
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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IRG7PH42UD1M
Abstract: 30A, 600v RECTIFIER DIODE
Text: IRG7PH42UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode
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IRG7PH42UD1M
1300Vpk
D-020D
IRG7PH42UD1M
30A, 600v RECTIFIER DIODE
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PDF
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IGBT 4000V ICM 400A
Abstract: IGBT 4000V
Text: PD - 96410B AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C VCES = 600V Low VCE ON Trench IGBT Technology Low switching losses IC(Nominal) = 75A
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96410B
AUIRGP4066D1
AUIRGP4066D1-E
IGBT 4000V ICM 400A
IGBT 4000V
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary UG6005PT creat by art 60.0AMPS. Glass Passivated Super Fast Rectifiers TO-3P/TO-247AD Features Dual rectifier construction, positive center-tap Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Glass passivated chip junctions
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UG6005PT
O-3P/TO-247AD
260oC
O-3P/TO-247AD
MIL-STD-750,
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PDF
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sf 016
Abstract: sF2007
Text: SF2001PT - SF2008PT creat by art 20.0AMPS. Glass Passivated Super Fast Rectifiers TO-3P/TO-247AD Pb RoHS COMPLIANCE Features UL Recognized File # E-326243 Dual rectifier construction, positive center-tap Plastic package has Underwriters Laboratory
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SF2001PT
SF2008PT
O-3P/TO-247AD
E-326243
O-3P/TO-247AD
SF2001PT-SF2004PT
SF2005PT-SF2006PT
50mVp-p
SF2007PT-SF2008PT
sf 016
sF2007
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PDF
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IRG7PH46UDPBF
Abstract: 028005
Text: PD - 97498A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient
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7498A
IRG7PH46UDPbF
IRG7PH46UD-EP
O-247AD
028005
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PDF
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Untitled
Abstract: No abstract text available
Text: IRGP6640DPbF IRGP6640D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 40A, TC =100°C tSC 5µs, TJ max = 175°C G C G IRGP6640DPbF TO-247AC E VCE(ON) typ. = 1.65V @ IC = 24A n-channel
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IRGP6640DPbF
IRGP6640D-EPbF
IRGP6640DPbFÂ
247ACÂ
IRGP6640Dâ
247ADÂ
IRGP6640DPbF/IRGP6640D-EPbF
JESD47F)
O-247AC
O-247AD
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PDF
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SMW60N06-18
Abstract: smw60n06
Text: Tem ic SMW60N06-18 Siliconix N-Channel Enhancement-Mode Transistor, 18-mQ rDS on Product Summary V(BR)DSS (V ) r DS(on) ( Q ) ID (A) 60 0.018 60 TO-247AD Ô s N-Channel M OSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted) Symbol Limit Drain-Source Voltage
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OCR Scan
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SMW60N06-18
18-mQ
O-247AD
P-36851--Rev.
SMW60N06-18
smw60n06
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PDF
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SMW20P10
Abstract: sm 6136 b NS8060 4560D
Text: Temic SMW20P10 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) ( ß ) I d (A) -1 0 0 0.20 -2 0 TO-247AD G D S l o p View P-C hannel M O S F E T Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted) Sym bol L im it
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OCR Scan
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SMW20P10
O-247AD
P-35259--
SMW20P10
sm 6136 b
NS8060
4560D
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PDF
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