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    303GB Search Results

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    303GB Price and Stock

    Vishay Beyschlag CMB02070X1303GB200

    RES SMD 130K OHM 2% 1W 0207
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    DigiKey CMB02070X1303GB200 Cut Tape 2,881 1
    • 1 $0.45
    • 10 $0.354
    • 100 $0.2375
    • 1000 $0.1875
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    CMB02070X1303GB200 Digi-Reel 2,881 1
    • 1 $0.45
    • 10 $0.354
    • 100 $0.2375
    • 1000 $0.1875
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    CMB02070X1303GB200 Reel 2,000 2,000
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    Vishay Beyschlag CMB02070X3303GB200

    RES SMD 330K OHM 2% 1W 0207
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    DigiKey CMB02070X3303GB200 Digi-Reel 1,452 1
    • 1 $1.01
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    CMB02070X3303GB200 Cut Tape 1,452 1
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    • 100 $0.3519
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    CMB02070X3303GB200 Reel 2,000
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    Vishay Dale RL07S303GB14

    RES 30K OHM 1/4W 2% AXIAL
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    DigiKey RL07S303GB14 Bulk 100 1
    • 1 $11.24
    • 10 $6.909
    • 100 $4.5305
    • 1000 $4.125
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    Vishay Dale RL20S303GB14

    RES 30K OHM 1/2W 2% AXIAL
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    DigiKey RL20S303GB14 Bulk 100 1
    • 1 $11.24
    • 10 $6.909
    • 100 $4.5305
    • 1000 $4.125
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    Amphenol Nexus NX303GB1R-62

    TACTICAL PUSHBUTTON SC 3 CONTACT
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    DigiKey NX303GB1R-62 Bulk 11 1
    • 1 $32.81
    • 10 $28.301
    • 100 $24.3964
    • 1000 $22.99148
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    Interstate Connecting Components NX303GB1R-62
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    CDM Electronics NX303GB1R-62 1
    • 1 $38.35
    • 10 $35.61
    • 100 $23.78
    • 1000 $23.78
    • 10000 $23.78
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    Find more 303GB price and stock on Findchips.com

    303GB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SEMiX 303GB12T4s Absolute Maximum Ratings Symbol Conditions IGBT  -  * 1 -  '2) *   ()*/       # '(.  34) "   5. * 6) " 9. " ; (.  -  '). * '. ?   () * 63. "   5. * () " 9. " 4. " - A 3. , B '2)


    Original     		PDF 303GB12T4s

    303Gb

    Abstract: No abstract text available
    Text: SEMiX 303GB12T4s Absolute Maximum Ratings Symbol Conditions IGBT  -  * 1 -  '2) *   ()*/       # '(.  34) "   5. * 6) " 9. " ; (.  -  '). * '. ?   () * 63. "   5. * () " 9. " 4. " - A 3. , B '2)


    Original     		PDF 303GB12T4s 303Gb

    Untitled

    Abstract: No abstract text available
    Text: SEMiX 303GB12T4s Absolute Maximum Ratings Symbol Conditions IGBT  -  * 1 -  '2) *   ()*/       # '(.  34) "   5. * 6) " 9. " ; (.  -  '). * '. ?   () * 63. "   5. * () " 9. " 4. " - A 3. , B '2)


    Original     		PDF 303GB12T4s

    453gb12e4s

    Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
    Text: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1


    Original     		PDF AN-9001 453gb12e4s SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c

    skm 195 gb 125 dn

    Abstract: IGBT ultra fast SKM200GB12E4 303GB12E4s SKM300GB123D igbt sixpack skm 50 gb 100 d 151GB12E4s skm200gb123d bridge rectifier 107
    Text: 1997-2012:QuarkCatalogTempNew 9/11/12 8:57 AM Page 1997 25 SEMITRANS and SEMiX High Performance IGBT Modules RoHS SEMiX 603 INTERCONNECT SEMITRANS 3 TEST & MEASUREMENT SEMITRANS™ and SEMiX® 600 V, 1200 V, 1700 V High Performance IGBT Modules SKM 400GAL125D


    Original     		PDF 400GAL125D 101GD066HDS 151GD066HDS 201GD066HDS 202GB066HDs 302GB066HDs 402GB066HDs SEMIX171KH16S SEMIX191KD16S SEMIX241DH16S skm 195 gb 125 dn IGBT ultra fast SKM200GB12E4 303GB12E4s SKM300GB123D igbt sixpack skm 50 gb 100 d 151GB12E4s skm200gb123d bridge rectifier 107

    Untitled

    Abstract: No abstract text available
    Text: E G R & ID G/CANADA/OPTOELEK C / Optics 1 D • 303Gblü □□OOG'ÌS ^50 M C A N A ^ InGaAs Photodiodes C30620 Series DATA SHEET Long Wavelength Photodiode For Detection of 1000 to 1700 NM Radiation Pream plifier Front End With or Without Integral Fiber Optic Pigtails


    OCR Scan     		PDF 303Gblà C30620 14-pin C30620QC-YY-XXX C30620-XXX

    VTB0912

    Abstract: VTB0913 VTBQ914
    Text: S bE 303Gb[n J> 0001DE7 V T B 0 9 1 2, 13, 14 VTB Process Photodiodes E G & G IVCT 515 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 25 ABSOLUTE MAXIMUM RATINGS Storage Temperature: -40°C to 1 10°C Operating Temperature: -40°C to 1 10°C


    OCR Scan     		PDF 303DbQ1 0001D27 VTB0912, VTB0912 VTB0913 VTBQ914 2x101z oxio13 x1013 VTB0912 VTB0913 VTBQ914

    YAG-444-4

    Abstract: YAG-444 SGD-444-4 TO36 package SGD-444-2 SGD-444
    Text: E G & G/CANADA/OPTOELEK SGD/YAG Series: M7E D 303Gbl0 00D03E4 2 ICANA Multi-Element T-HI-53 Features • • • • • • Cross Talk > 1 % Between Elements Oxide Passivated W ide Spectral Range Planar Diffused Structure W ide Spectral Range Linearity Over W ide Dynamic Range


    OCR Scan     		PDF 303Gbl0 00D03E4 SGD-444-2 SGD-444-4 YAG-444-4 YAG-444-4 MIL-STD-750B MIL-STD-202D YAG-444 TO36 package SGD-444

    Untitled

    Abstract: No abstract text available
    Text: Transmissive Optoswitch VTL13D1 - D7 Slotted Switch — .395 High PRODUCT DESCRIPTION This series of interrupter type transm issive optoswitches combines an infrared em itting diode IRED w ith an NPN phototransistor in a one piece, sealed, IR transm itting plastic case.


    OCR Scan     		PDF VTL13D1 VTL11 VTL13D 00D1SS7

    dr 25 germanium diode

    Abstract: thermistor inas J12-18C
    Text: EGa Indium Arsenide Detector Operating Notes 1.0 to 3.8 |im General Responsivity Temperature Effects J12 Series detectors are high-quality Indium Arsenide photodiodes for use in the 1 to 3.8 jim wavelength range. The equivalent circuit is a photon­ generated current source I h with parallel


    OCR Scan     		PDF J12TE3-66S-R250U J12TE3-66S-R01M J12TE2-66S J12TE3-66S dr 25 germanium diode thermistor inas J12-18C

    Untitled

    Abstract: No abstract text available
    Text: E G & 6/ CANADA/O PTOE LEK n n lOE D • 3Q30bl0 D0DQQ31 R ■ CANA i l Solid state 7"" V/"i>7 Solid State Emitters Elec,ro ° P “CS Developmental Type C86046E 820 nm CW-Operated GaAIAs Injection Laser With Integral Optical Feedback Photodiode ■ Typical Threshold Current - 100 mA


    OCR Scan     		PDF 3Q30bl0 D0DQQ31 C86046E L-1093

    Untitled

    Abstract: No abstract text available
    Text: E G & G/CANADA/OPTOELEK ID D 3030bl0 OOOG1SS I t c / l Optics «CANA t - w Photodiode C30957E DATA SHEET n-Type Silicon p-i-n Photodetector • Detector Chip Close to Window ■ Low Operating Voltage — VR = 45 V ■ Anti-Reflection Coated to Enhance Responsivity at 900 nm


    OCR Scan     		PDF 3030bl0 C30957E C30957E t455-6191 ED-0032/10/88

    HgCdTe

    Abstract: PbSe Judson J12TE3-66S-R250U J12TE3-66S-R01M detector active area size nep fast light detector Photodiodes Germanium LF356 OP27 OPA111
    Text: n Indium Arsenide Detector Operating Notes 1.0 to 3.8 |im General Responsivity Tem perature Effects J12 Series detectors are high-quality Indium A rsenide photodiodes for use in the 1 to 3.8 jim w avelength range. The equivalent circuit is a photon­ generated current source I h w ith parallel


    OCR Scan     		PDF J12TE3-66S-R250U J12TE3-66S-R01M J12TE2-66S J12TE3-66S HgCdTe PbSe Judson detector active area size nep fast light detector Photodiodes Germanium LF356 OP27 OPA111

    ELLS 110

    Abstract: avalanche photodiode bias avalanche photodiode preamplifier voltage C30919E
    Text: E G & G/CANADA/OPTOELEK 1 3D30blD DDDDIB^ 711 « C A N A WM MWk ÆWElectro I i l i # Ph o to d io d e Hhil C30919E DATA SH EET • Optics Photodiode-Preamplifier Module Completely Hybridized Temperature-Compensated Silicone Avalanche Photodiode-Preamplifier Module


    OCR Scan     		PDF 3D30bl0 00D0141 C30919E 0-27SI ELLS 110 avalanche photodiode bias avalanche photodiode preamplifier voltage C30919E

    SGD100A

    Abstract: SGD-100A sgd040a SGD-040A SGD040B
    Text: E G & G JUDSON 27E D • 3Q3 QbQS 0000175 Q ■ SGD Series Features • • • • • • Planar Diffused Structure Oxide Passivated Guard Ring Construction • • • Wide Spectral Range Wide Dynamic Range Low Noise Large Area Fast Rise Time High Responsivity


    OCR Scan     		PDF SGD-444 MIL-STD-202D SGD100A SGD-100A sgd040a SGD-040A SGD040B

    Untitled

    Abstract: No abstract text available
    Text: VTP8551 VTP Process Photodiodes PACKAGE DIMENSIONS inch mm m i t- 18 2 (4 .6 2 ) , 17 2 ( 4 . 3 7 ) r (0 .5 8 ) .0 3 9 ( 1 .0 0 ) ' .0 3 2 ( 0 .8 1 ) ( 2 .4 9 ) NOM. . ( 3 .3 0 ) •042 ( 1 .0 7 ) OPTICAL £ I r ' + ! 1 .1 6 2 ( 4 .1 1 ) Ic a t h o d e K


    OCR Scan     		PDF VTP8551 303Gbtn

    RCA 467

    Abstract: rca 807 RCA SOLID STATE C30116 infrared emitting diode led 1060-nm mW
    Text: E G & G/CANADA/OPTOELEK ID D • J3030bl0 G000D13 SSM ■ CANA V S f l l ÆM Electro Optics ■ and Devices Solid State Emitters Developmental Type C30116, C30116/F 1060 nm Indium Gallium Arsenide Infrared Surface Emitters for Pulsed or Continuous D C Operation


    OCR Scan     		PDF J3030bl0 GD0DG13 C30116, C30116/F l-737 C301K/F C30116 C30116/F RCA 467 rca 807 RCA SOLID STATE infrared emitting diode led 1060-nm mW

    C30985E Photodiode Array linear

    Abstract: C30985E 32 Elements linear Avalanche Photodiode Array rca 711 C30985 Photodiode Array 32 element 30-element L1117 l1117 g linear array photodiode element
    Text: E G & G/CANADA/OPTOELEK I t C i l IO D • B030bl0 OOODIST SGT * C A N A Photodiode C30985E DATA SHEET Optics 25-Element Silicon Avalanche Photodiode Linear Array for Detection of 900 to 1060 nm Radiation High Quantum Efficiency — 85% typical at 900 nm 18% typical at 1060 nm


    OCR Scan     		PDF B030bl0 C30985E 25-Element L-1117 C30985E 34-pin ED-0006/09/87 C30985E Photodiode Array linear 32 Elements linear Avalanche Photodiode Array rca 711 C30985 Photodiode Array 32 element 30-element L1117 l1117 g linear array photodiode element

    gaseous lasers

    Abstract: C86083E C86093E 910nm laser rca rca 019 1200cu general electric laser 910nm
    Text: E G 8. G/CANADA/OPTOELEK Electro Optics 5TE ì> m 3030blD 0D0D2b0 2 • CANA T 1 ¥ /~ O S ^ C86093E 910 nm Quantum Well Pulsed Laser DATA SHEET Coaxial Stud Package m 1r 1 The C86093E is a high power single element pulsed laser diode operating in the 900to 920 nm wavelength band. Using


    OCR Scan     		PDF 3030blD C86093E 200ns 910nm C86093E 900to gaseous lasers C86083E 910nm laser rca rca 019 1200cu general electric laser 910nm

    optical input to rca 5.1 output circuit

    Abstract: rca ca3130 CA3130 peak detector GB41P2 fenwal ca3130 equivalent CLASS II LASER laser rca melcor PULSED LASER DIODE DRIVER
    Text: E G & G/CANADA/OPTOELEK I f n • IDE D ■ 3030L.10 □□□0031 R Hi CANA i l fp11^state 7"" Solid State Emitters Electro Optics ■ * ■- r Developmental Type r C86046E 820 nm CW-Operated GaAIAs Injection Laser With Integral Optical Feedback Photodiode


    OCR Scan     		PDF 3030bl0 C86046E -13x2 C86046E optical input to rca 5.1 output circuit rca ca3130 CA3130 peak detector GB41P2 fenwal ca3130 equivalent CLASS II LASER laser rca melcor PULSED LASER DIODE DRIVER

    GD363

    Abstract: No abstract text available
    Text: TOSHIBA TMP47C620/820 CMOS 4-BIT MICROCONTROLLER TMP47C620DF, TMP47C820DF The 47C620/820 are high speed and high perform ance 4-bit single chip m icrocomputers based on the TLCS470 series w ith a LCD driver and high speed tim er / counters. PART No. ROM RAM


    OCR Scan     		PDF TMP47C620/820 TMP47C620DF, TMP47C820DF 47C620/820 TLCS470 TMP47C620DF QFP80-P-1420-0 TMP47P820VDF CSB400B GD363

    Untitled

    Abstract: No abstract text available
    Text: VTL5C3, 5C4 Low Cost LED Axial Vactrols PACKAGE DIMENSIONS inch mm .5 ( 12^7 ) 32 0 (8 .1 5 ) ( 5 .0 8 ) .3 7 0 (9 .< 0 ) UL Listed File #73887 .3 9 0 Í9 .9 1 ) PLASTIC POTTING CONTOUR NOT CONTROLLED DESCRIPTION VTL5C4 features a very low "on" resistance, fast


    OCR Scan     		PDF 303GbCH

    VTL5C4

    Abstract: VTL5C3 VTL5C1 vtl5 vactrol
    Text: VTL5C3, 5C4 Low Cost LED Axial Vactrols PACKAG E DIMENSIONS inch mm .5 0 ( 12. 7 ) .3 9 (9 .9 ) K MINIMUM * 320 (8 .1 5 ) .0 6 0- LJAV — —-(1 .5 2 ) (2 T - PLCS) n .0 1 0 ( 0 . 2 5 ) .0 2 5 ( 0 . 6 4 ) w ( 5 .08 ) .3 7 0 .3 9 0 (0 .5 1 ) UL Listed File #73887


    OCR Scan     		PDF 3Q30b01 VTL5C4 VTL5C3 VTL5C1 vtl5 vactrol

    J18TE2-66G

    Abstract: J18TE4-3GN-R01M-2 J18TE2
    Text: A eG sG JU P S O N Extended InGaAs Photodiodes 0.8 to 2.6 ¡am 1.9|_un Th erm oelectrically Cooled Extended InG aAs D etectors Model Number Cutoff Part Active Operating Wave­ Responsivity , Number Size Temper­ length Dia. ature . (50%) @ ^peak Ko (mm)


    OCR Scan     		PDF J18TE1-37S-R250U-1 J18TE1-37S-R01M-1 J18TE1-37S-R02M-1 2xl01 J18TE1 J18TE2-66G J18TE3-66G J18TE4-3GN-R01M-2 J18TE2