Untitled
Abstract: No abstract text available
Text: E 6 & 6/CANADA/OP TOELEK R C /1 3D30blD DDD01DS 33T « C A N A 10 T - V /- Photodiode C30817 DATA SH EET Optics Silicon Avalan che Photodiode for G e n eral-Purp ose Applications • High Quantum Efficiency — 85% typical at 900 nm — 18% typical at 1060 nm
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3D30blD
DDD01DS
C30817
C30817
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ELLS 110
Abstract: avalanche photodiode bias avalanche photodiode preamplifier voltage C30919E
Text: E G & G/CANADA/OPTOELEK 1 3D30blD DDDDIB^ 711 « C A N A WM MWk ÆWElectro I i l i # Ph o to d io d e Hhil C30919E DATA SH EET • Optics Photodiode-Preamplifier Module Completely Hybridized Temperature-Compensated Silicone Avalanche Photodiode-Preamplifier Module
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3D30bl0
00D0141
C30919E
0-27SI
ELLS 110
avalanche photodiode bias
avalanche photodiode
preamplifier voltage
C30919E
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C30817
Abstract: s915 C30872 C30954E C30955E tic 1060 C30956E s914 C30916E 92LS-S916
Text: £ n G & G/CANADA/OPTOELEK e / ID » l Electro Optics 3 D 3 D b lO O O O O IH ^ bbO ICANA 'T '- y / '- S V Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications • High Quantum Efficiency —
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3030bl0
C30954E,
C30955E,
C30956E
C30954E
C30955E
Range--40Â
C30817
s915
C30872
C30955E
tic 1060
C30956E
s914
C30916E
92LS-S916
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Untitled
Abstract: No abstract text available
Text: G S C/CANADA/OPTOELEK 10E C • 3030bl0 0000051 ICANA 1 C86006E. C86010E GaAlAs Injection Lasers Developmental Types 820 nm Gallium Aluminum Arsenide Injection Lasers for CW or Pulsed Operation With Integral Fiber Optic Cables and Connectors RCA developm ental types C86006E
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3030bl0
C86006E.
C86010E
C86006E
C86006E,
C86007E,
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2N3818
Abstract: laser rca 2l688 C86000E rca laser eg and g laser diode RCA Solid State S20 rca OP-12 laser diode module 820 nm
Text: G & G/CANADA/OPTOELEK IG ì> 3030blQ GDGDDSG 4T1 • CAN A Laser t ie c t r o u p t ic s i t c j i and Devices Developmental Type Low Threshold CW-Operated Gallium Aluminum Arsenide Injection Laser ■ Typical Threshold Current — 75 mA ■ Continuous or Pulsed Operation at Room Temperature
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3030blQ
OP-12
C86000E
2N3818
laser rca
2l688
rca laser
eg and g laser diode
RCA Solid State
S20 rca
laser diode module 820 nm
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RCA 4046
Abstract: RCA Solid State rca 036 C30948E 3ls543sr1
Text: F f & g/CANADA/OPTOELEK id ]> • 3 Q 3 0 b l 0 □□□□□40 SSE « C A N A Solid State Detectors n n n ElectroOpt.cs I m U P w l and Devices Developm ental TvDe C30948E Photodiode Silicon Avalanche Photodiode Having Very High Modulation Capability ■ High Quantum Efficiency 85% typical at 830 and 900 nm
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3Q30bl0
C30948E
C30948E
KLS-S223R1
543SR1
RCA 4046
RCA Solid State
rca 036
3ls543sr1
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