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    Walsin Technology Corporation 0402N330J250CT

    CAP CER 33PF 25V C0G/NP0 0402
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    DigiKey () 0402N330J250CT Cut Tape 69,735 1
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    0402N330J250CT Digi-Reel 69,735 1
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    Mouser Electronics 0402N330J250CT 20,176
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    Walsin Technology Corporation 0201N330J250CT

    CAP CER 33PF 25V C0G/NP0 0201
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    DigiKey () 0201N330J250CT Cut Tape 47,632 1
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    0201N330J250CT Digi-Reel 47,632 1
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    Mouser Electronics 0201N330J250CT 26,380
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    Ohmite Mfg Co F30J250E

    30W 250 OHMS VIT 5%
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    DigiKey () F30J250E Box 1 1
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    F30J250E Bulk 1
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    Mouser Electronics F30J250E
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    RS F30J250E Bulk 8 Weeks 25
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    IBS Electronics F30J250E 3 1
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    Master Electronics F30J250E 3
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    Nextgen Components RF01N330J250LE

    Cap. SMD,0201,NP0,33pF,5%,25V
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    DigiKey RF01N330J250LE Reel 15,000
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    Walsin Technology Corporation 0805N330J250CT

    CAP CER 33PF 25V C0G/NP0 0805
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    DigiKey 0805N330J250CT Reel 4,000
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    Mouser Electronics 0805N330J250CT 8,112
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    NAC 0805N330J250CT 4,000 1
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    30J250 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    5SGA30J2501

    Contextual Info: Key Parameters VDRM = 2500 ITGQM = 3000 ITSM = 30 VT0 = 1.50 rT = 0.33 VDClink = 1400 V A kA V mΩ V Gate turn-off Thyristor 5SGA 30J2501 Doc. No. 5SYA 1213-02 Feb.97 Features • Patented free-floating technology • Low on-state and switching losses • Annular gate electrode


    Original     		30J2501 0E-03 0E-02 0E-01 CH-5600 5SGA30J2501 PDF

    abb 2040

    Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = 2500 V = 3000 A = 30 kA = 1.5 V = 0.33 mΩ = 1400 V Gate turn-off Thyristor 5SGA 30J2501 Doc. No. 5SYA1213-02 Jan. 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		30J2501 5SYA1213-02 CH-5600 abb 2040 PDF

    30J250

    Abstract: 5SGA30J2501 THYRISTOR GTO
    Contextual Info: Key Parameters VDRM = 2500 ITGQM = 3000 ITSM = 3000 VT0 = 1.50 rT = 0.33 VDClink = 1400 V A kA V Gate turn-off Thyristor 5SGA 30J2501 mΩ V Doc. No. 5SYA 1213-02 April 98 Features • Patented free-floating technology • Low on-state and switching losses


    Original     		30J2501 CH-5600 30J250 5SGA30J2501 THYRISTOR GTO PDF

    ABB thyristor 5

    Abstract: cosmic GTO thyristor ABB 30J250
    Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 3000 30 1.50 0.33 1400 V A kA V Gate turn-off Thyristor 5SGA 30J2501 mΩ V Doc. No. 5SYA 1213-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		30J2501 CH-5600 ABB thyristor 5 cosmic GTO thyristor ABB 30J250 PDF

    5SDF01R2501

    Abstract: 5SGA 5SGA30J2501 RTK 031
    Contextual Info: A S Y M M E T R I C _ G T Q T H Y R I S T O R S - ± X 0 GTO - Patentierter freier Druckkontakt. - Alle GTOs werden unter Ausschalt­ grenzwerten getestet. - Ausgezeichnete O ptimierung zwiscl Durchlass- und Schaltverlusten. - Spezifizierte Höhenstrahlungsfes­


    OCR Scan     		01R2501 05D2501 05D2501 15F2502 20H2501 25H2501 30J2501 20H4502 11F2501 03D4501 5SDF01R2501 5SGA 5SGA30J2501 RTK 031 PDF

    ABB 5SGA

    Abstract: 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502
    Contextual Info: Asymmetrie GTO Thyristors ABB Semiconductors AG I Patented free-floating silicon technology. — All G TOs are turn-off tested under maxim um ratings. — Excellent trade-off between on-state and switching losses. T yp e and ordering num ber V DRM V DC V RRM •tGQM at C s


    OCR Scan     		15F2502 15F2502 05D2501 01R2501 20H2501 05D2501 11F2501 25H2501 ABB 5SGA 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502 PDF