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    30J250 Price and Stock

    Walsin Technology Corporation 0402N330J250CT

    CAP CER 33PF 25V C0G/NP0 0402
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    DigiKey 0402N330J250CT Cut Tape 63,118 1
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    0402N330J250CT Digi-Reel 63,118 1
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    0402N330J250CT Reel 60,000 10,000
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    Mouser Electronics 0402N330J250CT 63,161
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    TME 0402N330J250CT 10,000
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    Walsin Technology Corporation 0201N330J250CT

    CAP CER 33PF 25V C0G/NP0 0201
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    DigiKey 0201N330J250CT Cut Tape 49,634 1
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    0201N330J250CT Digi-Reel 49,634 1
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    0201N330J250CT Reel 15,000 15,000
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    Mouser Electronics 0201N330J250CT 28,571
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    TME 0201N330J250CT 15,000
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    Ohmite Mfg Co F30J250E

    30W 250 OHMS VIT 5%
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    DigiKey F30J250E Box 1 1
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    F30J250E Bulk 1
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    Mouser Electronics F30J250E
    • 1 $18.22
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    Newark F30J250E Bulk 25
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    RS F30J250E Bulk 10 Weeks 25
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    Master Electronics F30J250E 3
    • 1 $15.081
    • 10 $13.71
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    Walsin Technology Corporation 0603N330J250CT

    CAP CER 33PF 25V C0G/NP0 0603
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    DigiKey 0603N330J250CT Reel 4,000
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    Mouser Electronics 0603N330J250CT 11,885
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    Newark 0603N330J250CT Cut Tape 2,757 10
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    0603N330J250CT Reel 4,000
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    Walsin Technology Corporation RF03N330J250CT

    CAP CER 33PF 25V C0G/NP0 0201
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    DigiKey RF03N330J250CT Reel 15,000
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    Mouser Electronics RF03N330J250CT 6,360
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    30J250 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    5SGA30J2501

    Abstract: No abstract text available
    Text: Key Parameters VDRM = 2500 ITGQM = 3000 ITSM = 30 VT0 = 1.50 rT = 0.33 VDClink = 1400 V A kA V mΩ V Gate turn-off Thyristor 5SGA 30J2501 Doc. No. 5SYA 1213-02 Feb.97 Features • Patented free-floating technology • Low on-state and switching losses • Annular gate electrode


    Original     		30J2501 0E-03 0E-02 0E-01 CH-5600 5SGA30J2501 PDF

    abb 2040

    Abstract: No abstract text available
    Text: VDRM ITGQM ITSM VT0 rT VDClink = 2500 V = 3000 A = 30 kA = 1.5 V = 0.33 mΩ = 1400 V Gate turn-off Thyristor 5SGA 30J2501 Doc. No. 5SYA1213-02 Jan. 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		30J2501 5SYA1213-02 CH-5600 abb 2040 PDF

    30J250

    Abstract: 5SGA30J2501 THYRISTOR GTO
    Text: Key Parameters VDRM = 2500 ITGQM = 3000 ITSM = 3000 VT0 = 1.50 rT = 0.33 VDClink = 1400 V A kA V Gate turn-off Thyristor 5SGA 30J2501 mΩ V Doc. No. 5SYA 1213-02 April 98 Features • Patented free-floating technology • Low on-state and switching losses


    Original     		30J2501 CH-5600 30J250 5SGA30J2501 THYRISTOR GTO PDF

    ABB thyristor 5

    Abstract: cosmic GTO thyristor ABB 30J250
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 3000 30 1.50 0.33 1400 V A kA V Gate turn-off Thyristor 5SGA 30J2501 mΩ V Doc. No. 5SYA 1213-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		30J2501 CH-5600 ABB thyristor 5 cosmic GTO thyristor ABB 30J250 PDF

    5SDF01R2501

    Abstract: 5SGA 5SGA30J2501 RTK 031
    Text: A S Y M M E T R I C _ G T Q T H Y R I S T O R S - ± X 0 GTO - Patentierter freier Druckkontakt. - Alle GTOs werden unter Ausschalt­ grenzwerten getestet. - Ausgezeichnete O ptimierung zwiscl Durchlass- und Schaltverlusten. - Spezifizierte Höhenstrahlungsfes­


    OCR Scan     		01R2501 05D2501 05D2501 15F2502 20H2501 25H2501 30J2501 20H4502 11F2501 03D4501 5SDF01R2501 5SGA 5SGA30J2501 RTK 031 PDF

    ABB 5SGA

    Abstract: 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502
    Text: Asymmetrie GTO Thyristors ABB Semiconductors AG I Patented free-floating silicon technology. — All G TOs are turn-off tested under maxim um ratings. — Excellent trade-off between on-state and switching losses. T yp e and ordering num ber V DRM V DC V RRM •tGQM at C s


    OCR Scan     		15F2502 15F2502 05D2501 01R2501 20H2501 05D2501 11F2501 25H2501 ABB 5SGA 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502 PDF