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onsemi NGTB30N60SWG IGBT 600V 60A 189W TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NGTB30N60SWG	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	NGTB30N60SWG		1,873		1	1 $2.28 10 $2.28 100 $2.14 1000 $1.94 10000 $1.94	Buy Now
Rochester Electronics LLC NGTB30N60SWG IGBT TRENCH FS 600V 60A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NGTB30N60SWG	Tube			127	1 - 10 - 100 - 1000 $2.37 10000 $2.37	Buy Now
Fuji Electric Co Ltd FMH30N60S1 Mosfet, N Channel, 600V, 30A, To-3P-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:30A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Msl:- Rohs Compliant: Yes \|Fuji Electric FMH30N60S1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	FMH30N60S1	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Fuji Electric Co Ltd FMP30N60S1 Mosfet, N Channel, 600V, 30A, To-220Ab-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:30A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Msl:-Rohs Compliant: Yes \|Fuji Electric FMP30N60S1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	FMP30N60S1	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Fuji Electric Co Ltd FMV30N60S1 Mosfet, N Channel, 600V, 30A, To-220F-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:30A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Msl:- Rohs Compliant: Yes \|Fuji Electric FMV30N60S1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	FMV30N60S1	Bulk			1	1 $8.88 10 $8.02 100 $6.35 1000 $5.14 10000 $5.14	Buy Now

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30N60S Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
FMH30N60S1 Abstract: FMH30N60 SCHEMATIC ups 600V 20A N-Channel MOSFET TO-3P 30N60S Text: / 30N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Outline Drawings [mm] TO-3P 13 ± 0.2 4.5±0.2 Drain D UPS Server Telecom Power conditioner system Power supply 1.6	Original	PDF	FMH30N60S1 FMH30N60S1 FMH30N60 SCHEMATIC ups 600V 20A N-Channel MOSFET TO-3P 30N60S
30N60S Abstract: No abstract text available Text: 30N60SWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is	Original	PDF	NGTB30N60SWG NGTB30N60SW/D 30N60S
30N60S1 Abstract: FMP30N60S1 30N60S fuji electric lot code fuji lot code mosfet 452 Text: / 30N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Outline Drawings [mm] +0.5 4.5±0.2 1.3±0.2 2.7 ±0.1 10 Ø3.6 6.4 ±0.2 ±0.2 UPS Server Telecom Power conditioner system	Original	PDF	FMP30N60S1 O-220 O-220AB 30N60S1 FMP30N60S1 30N60S fuji electric lot code fuji lot code mosfet 452
FMV30N60S1 Abstract: 30N60 FMV30 Text: / 30N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Low on-state resistance Low switching loss easy to use more controllabe switching dV/dt by Rg	Original	PDF	FMV30N60S1 O-220F FMV30N60S1 30N60 FMV30
FMW30N60S1 Abstract: FMW30N60S1HF 30N60S Text: / 30N60S1HF FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Low on-state resistance Low switching loss easy to use more controllabe switching dV/dt by Rg	Original	PDF	FMW30N60S1HF O-247-P2 FMW30N60S1 FMW30N60S1HF 30N60S