30V 10.5A p-channel MOSFET
Abstract: PT4435
Text: PT4435 30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS ON , Vgs@-10V, Ids@-10.5A = 18mΩ RDS(ON), Vgs@-4.5V, Ids@-6.0A = 30mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D D 8 7
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PT4435
300us,
30V 10.5A p-channel MOSFET
PT4435
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Untitled
Abstract: No abstract text available
Text: AP4533GEH-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D1/D2 30V ▼ Good Thermal Performance RDS ON 18mΩ ▼ Fast Switching Performance ID 10.5A ▼ RoHS Compliant & Halogen-Free
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AP4533GEH-HF
O-252-4L
100ms
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KHB011N40P1
Abstract: KHB011N40F1
Text: SEMICONDUCTOR KHB011N40P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB011N40P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB011N40P1/F1
KHB011N40P1
KHB011N40P1
KHB011N40F1
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB011N40P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB011N40P1/F1
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KHB011N40P1
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB011N40P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB011N40P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB011N40P1/F1
KHB011N40P1
KHB011N40P1
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KHB011N40F1
Abstract: KHB011N40F2 KHB011N40P1
Text: SEMICONDUCTOR KHB011N40P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB011N40P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB011N40P1/F1/F2
KHB011N40P1
Fig15.
Fig16.
Fig17.
KHB011N40F1
KHB011N40F2
KHB011N40P1
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21N50ES
Abstract: 21N50 TO3P package to-247 to-220 to-3p 21N50E
Text: DATE CHECKED Oct.-14-'08 CHECKED Oct.-14-'08 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor
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FMV21N50ES
MS5F7233
H04-004-05
H04-004-03
21N50ES
21N50
TO3P package
to-247 to-220 to-3p
21N50E
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21N50ES
Abstract: ic MARKING QG FMH21N50ES
Text: DATE CHECKED Oct.-14-'08 CHECKED Oct.-14-'08 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor
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FMH21N50ES
MS5F7234
H04-004-05
H04-004-03
21N50ES
ic MARKING QG
FMH21N50ES
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Untitled
Abstract: No abstract text available
Text: DMG7430LFG Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits • Low RDS ON – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products 10.5A • Occupies just 33% of the board area occupied by SO-8 enabling
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DMG7430LFG
AEC-Q101
DS35497
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Untitled
Abstract: No abstract text available
Text: DMG7430LFG Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits • Low RDS ON – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products 10.5A • Occupies just 33% of the board area occupied by SO-8 enabling
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DMG7430LFG
AEC-Q101
DS35497
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5a6 zener diode
Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical
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Si4418DY
130mOhm@
Si4420BDY
Si6928DQ
35mOhm@
Si6954ADQ
53mOhm@
SiP2800
SUM47N10-24L
24mOhm@
5a6 zener diode
dual mosfet dip
diode zener 6.2v 1w
10v ZENER DIODE
5A6 smd sot23
DG9415
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12v 1200W DC POWER SUPPLY SCHEMATIC
Abstract: DQ65033QMA06NNS 110VDC to 12vdc converter 601 Opto isolator 1000w buck boost converter RTCA DO-160 POWER 12v 28V 3A 60W DC-DC htc legend DC converter 50A 100V NQ04W33SMA16PSS
Text: VE A AD R V C U N C HE POW T G ER N I Fa l l 2 0 1 0 C omplete Product C atalog Founded in 1997, SynQor has become the technology, quality and service leader for high efficiency dc-dc converters for the telecom/datacom marketplace. The PowerQor®, BusQor®,
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custo96
12v 1200W DC POWER SUPPLY SCHEMATIC
DQ65033QMA06NNS
110VDC to 12vdc converter
601 Opto isolator
1000w buck boost converter
RTCA DO-160
POWER 12v 28V 3A 60W DC-DC
htc legend
DC converter 50A 100V
NQ04W33SMA16PSS
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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12A 650V MOSFET
Abstract: kelvin 1102 piezoelectric circuit charger theory of dac IC 0808 nec Digital Clock Driver 1708f ceramic capacitors 1708
Text: LTC1708-PG Dual Adjustable 5-Bit VID High Efficiency, 2-Phase Current Mode Synchronous Buck DC/DC Controller U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 1708 is a dual adjustable 5-bit VID programmable step-down switching regulator controller that drives
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LTC1708-PG
300kHz.
LTC3728
550kHz,
SSOP-28
LTC3729
550kHz
12-Phase,
LTC3732
12A 650V MOSFET
kelvin 1102
piezoelectric circuit charger
theory of dac IC 0808
nec Digital Clock Driver
1708f
ceramic capacitors 1708
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NTC thermistor 100K
Abstract: INTEL 845 MOTHERBOARD CIRCUIT diagram 550nH president alim FAN53168 FAN53418 TSSOP28 TSSOP-28 CPU AC Loadline intel 845 MOTHERBOARD pcb CIRCUIT diagram
Text: www.fairchildsemi.com FAN53168 6-Bit VID Controlled 2-4 Phase DC-DC Controller Features General Description • Precision Multi-Phase DC-DC Core Voltage Regulation – ±10mV Output Voltage Accuracy Over Temperature • Differential Remote Voltage Sensing
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FAN53168
VRM/VRD10
DS300053168
NTC thermistor 100K
INTEL 845 MOTHERBOARD CIRCUIT diagram
550nH
president alim
FAN53168
FAN53418
TSSOP28
TSSOP-28
CPU AC Loadline
intel 845 MOTHERBOARD pcb CIRCUIT diagram
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76107P
Abstract: ms101c DS20A TA76107
Text: interrii HUF76107P3 Data Sheet O ctober 1999 20A, 30V, 0.052 Ohm, N-Channeì, Logic Level UltraFET Power MOSFETs F ile N um ber 4382.5 Features • Logic Level G ate Drive Th ese N -Channel power M O S F E T s are m anufactured using • 20A, 3 0V the innovative UltraFET process.
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HUF76107P3
HUF76107P3
AN7260.
76107P
ms101c
DS20A
TA76107
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76107d
Abstract: TA76107 F76107D3S F7610 dlis
Text: in te r r ii HUF76107D3, HUF76107D3S Data S heet 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Th ese N -Channel power u m t$ ' M O S F E T s are m anufactured using J u ly 1999 F ile N u m b e r 4701.1 Features • Logic Level G ate Drive
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HUF76107D3,
HUF76107D3S
HUF76107D3S
AN7260.
76107d
TA76107
F76107D3S
F7610
dlis
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sml8075hn
Abstract: sml7575hn
Text: SEMELAB bOE PLC 5133157 ]> M il ODDOflbb HTT ISULB MOS POWER d '“P 3 > ° 1 - 1 $ SML8075HN SML7575HN SML8090HN SML7590HN SEM E LAB 800V 750V 800V 750V 11.5A 11.5A 10.5A 10.5A 0.75Q 0.75Q 0.90Q 0.90LÌ N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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SML8075HN
SML7575HN
SML8090HN
SML7590HN
7575HN
8075HN
7590HN
8090HN
Vo5/7575/8090/7590HN
10jiS
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LD 7575 PS
Abstract: 8075an APT8075AN 7590 8090 apt8090an APT7575AN APT7590AN APT8075 8090A
Text: ADVANCFD POWFR TECHNOLOGY QEST'ID'I GQODMÔM 7Ü5 • AVP M'ìE 1> AD VAN CED P O W ER 'Xm - \ S Tec h n o lo g y APT8075AN APT7575AN APT8090AN APT7590AN POWER MOS IV 800V 750V 800V 750V 11.5A 11.5A 10.5A 10.5A 0.75 0.75 0.90 0.90 £i Í2 £2 fl N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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OCR Scan
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0000MÃ
APT8075AN
APT7575AN
APT8090AN
APT7590AN
7575AN
8075AN
7590AN
8090AN
O-204AA)
LD 7575 PS
7590
8090
APT8075
8090A
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090Q
Abstract: 0S3C APT8075HN 80-75H 8075HN
Text: ADVANCED POIilER TECHNOLOGY b lE D • 0E57TCH 0000825 flTfl H A V P A dvanced P o w er Te c h n o lo g y POWER MOS IV _ APT8075HN 800V 11.5A 0.75Q APT7575HN 750V 11.5A 0.75D APT8090HN 800V 10.5A 0.90Q APT7590HN750V 10.5A 0.90Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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0E57TCH
APT8075HN
APT7575HN
APT8090HN
APT7590HN750V
7575HN
8075HN
7590HN
8090HN
O-258AA
090Q
0S3C
80-75H
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SEC550
Abstract: sml5560cn lm 5560 122T-T 200DG
Text: _ S E ME L A B LOE D PL C 0133107 OODOÛlfl 737 H S M L B MOS POWER = ^ = llll T SML6060CN SML5560CN SML6070CN SML5570CN SEME LAB 600V 550V 600V 550V 4 ;3 f l - i 3 10.5A 10.5A 9.5A 9.5A 0.60ft 0.60ft 0.70ft 0.70ft N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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SML6060CN
SML5560CN
SML6070CN
SML5570CN
5560CN
6060CN
5570CN
6070CN
O-254AA
SEC550
lm 5560
122T-T
200DG
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APT6060CN
Abstract: 2SJ10 6060C BAVP APT5560CN APT5570CN APT6070CN
Text: ADVANCED POWER TECHNOLOGY blE D • □ 2 5 7 ‘iOT □ □ □0 7 t eJ IMT B A V P A d v a n ced W /A p o w e r rÆ ÊÊ T e c h n o l o g y POWER MOS IV APT6060CN APT5560CN APT6070CN APT5570CN 600V 550V 600V 550V 10.5A 10.5A 9.5A 9.5A 0.60Q 0.60Q
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APT6060CN
APT5560CN
APT6070CN
APT5570CN
5560CN
6060CN
5570CN
6070CN
Junc01
O-254AA
2SJ10
6060C
BAVP
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6070AN
Abstract: t606 APT5560AN APT5570AN APT6060AN APT6070AN
Text: ADVANCFD POUFR TECHNOLOGY 4=î E 0E57W » 000047b b3b * A V P A dvanced R o w e r t 2p m 5 Te c h n o l o g y O D - M APT6060AN 600V 11.5A 0.60 Q APT5560AN 550V 11.5A 0.60 Q APT6070AN 600V 10.5A 0.70 ft APT5570AN550V 10.5A 0.70 Q Ò s POWER MOS IV _
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TECHN0L06Y
000047b
APT6060AN
APT5560AN
APT6070AN
APT5570AN
5560AN
6060AN
5570AN
6070AN
6070AN
t606
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LD 7575 PS
Abstract: 8075AN APT8075AN APT7575AN APT8090AN APT7590AN G0004
Text: ADVANCFD POIilFR TECHNOLOGY M'ìE 0 2 5 7 cl 0 cì D 0000MÖ4 I AVP 7 DB A d va n c ed POWER Te c h n o lo g y APT8075AN 800V 11.5A 0.75 APT7575AN 750V 11.5A 0.75 n APT8090AN 800V 10.5A 0.90 Q, APT7590AN 750V 10.5A 0.90 £2 O D "P3fl-\S O S POWER MOS IV
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0257CI0CI
0000MÃ
APT8075AN
APT7575AN
APT8090AN
APT7590AN
7575AN
8075AN
7590AN
8090AN
LD 7575 PS
G0004
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PDF
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