Contextual Info: A10 6-…-8 – 7-.-2 hinzu 21MAY2010 KS A11 7-…-3 – 8-.-1 hinzu 13SEP2010 KS A12 8-.-2 – 8-.-7 hinzu 31AUG2012 KS A13 8-…-8 – 8-.-9 hinzu 29AUG2013 KS DocManager Die Tabellenseiten müssen einzeln gedruckt werden. Ab XP macht der Imagewriter nur noch Gruppe 4

TL3202

Abstract: TLV3201AIDBV TLV3012 equivalent
Contextual Info: TLV3201 TLV3202 www.ti.com SBOS561A – MARCH 2012 – REVISED JUNE 2012 40-ns, microPOWER, Push-Pull Output Comparators Check for Samples: TLV3201, TLV3202 FEATURES DESCRIPTION • • The TLV3201 and TLV3202 are single- and dualchannel comparators that offer the ultimate

tms320 54x mcbsp

Contextual Info: TMS320VC5441 Fixed-Point Digital Signal Processor Data Manual Literature Number: SPRS122F December 1999 − Revised October 2008 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments

STF6N95K5

Abstract: 16958 std6n95k5 STW6N95K5 6N95K5
Contextual Info: STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5 N-channel 950 V, 1 Ω typ., 9 A Zener-protected SuperMESH 5 Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 and IPAK Datasheet — production data Features TAB Type VDSS RDS on max. ID PW STD6N95K5 9A

STPSC

Abstract: 8a650
Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet  production data Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ High forward surge capability A K K K Description The SiC diode is an ultrahigh performance power

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC20H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 1 K (2) A2 (3) A2 A1 K TO-220AB STPSC20H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

Contextual Info: TPS40422 www.ti.com SLUSAQ4C – OCTOBER 2011 – REVISED AUGUST 2012 Dual-Output or Two-Phase Synchronous Buck Controller with PMBus Check for Samples: TPS40422 FEATURES APPLICATIONS • • • • • • • 1 • • • • • • • • • • •

Contextual Info: ADS1230 www.ti.com SBAS366B – OCTOBER 2006 – REVISED SEPTEMBER 2012 20-Bit Analog-to-Digital Converter For Bridge Sensors Check for Samples: ADS1230 FEATURES DESCRIPTION • • • • The ADS1230 is a precision 20-bit analog-to-digital converter ADC . With an onboard low-noise

Contextual Info: STD3PK50Z P-channel 500 V, 3 Ω typ., 2.8 A Zener-protected SuperMESH Power MOSFET in a DPAK package Datasheet — production data Features Order code VDSS RDS on max STD3PK50Z 500 V < 4Ω • Gate charge minimized ■ Extremely high dv/dt capability ■

oaxq

Abstract: INA321 application
Contextual Info: BurrĆBrown Products from Texas Instruments OPA333 OPA2333 SBOS351C – MARCH 2006 – REVISED MAY 2007 1.8V, microPOWER CMOS OPERATIONAL AMPLIFIERS Zerø-Drift Series FEATURES • • • • • • • • DESCRIPTION LOW OFFSET VOLTAGE: 10 V max ZERO DRIFT: 0.05μV/°C (max)

Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

TPS5480

Abstract: TPS5481
Contextual Info: TPS5480, TPS5481 www.ti.com SLVSBH5 – JULY 2012 10-V TO 24-V INPUT, 5-V OUTPUT, 2.1-A STEP-DOWN VOLTAGE CONVERTER Check for Samples: TPS5480, TPS5481 FEATURES 1 • • • • • • 5-V Synchronous/Asynchronous Hysteretic Switching Regulator Low Output Ripple and Allows Ceramic Output

STPSC20H065C

Abstract: STPSC20H065CW diode 1.e
Contextual Info: STPSC20H065C 650 V power Schottky silicon carbide diode Datasheet  production data Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC applications ■ High forward surge capability A1 1

TDA7266SAN

Abstract: TDA7297SA tda7297 Layout tda7266sa
Contextual Info: TDA7266SAN 5 W + 5 W dual bridge amplifier Datasheet − production data Features • Wide supply voltage range 3.5 - 13 V ■ Minimum external components – No SWR capacitor – No bootstrap – No Boucherot cells – Internally fixed gain ■ Standby & mute functions

UDFN6

Contextual Info: STM6524 6-pin Smart Reset Datasheet − production data Features • Operating voltage 1.65 V to 5.5 V ■ Low supply current 1.5 µA ■ Integrated test mode ■ Dual Smart Reset™ push-button inputs with fixed extended reset setup delay tSRC from 0.5 s to 10 s in 0.5 s steps (typ.), option with

TPS5480

Abstract: TPS5481
Contextual Info: TPS5480, TPS5481 www.ti.com SLVSBH5 – JULY 2012 10-V TO 24-V INPUT, 5-V OUTPUT, 2.1-A STEP-DOWN VOLTAGE CONVERTER Check for Samples: TPS5480, TPS5481 FEATURES 1 • • • • • • 5-V Synchronous/Asynchronous Hysteretic Switching Regulator Low Output Ripple and Allows Ceramic Output

weigh scale calibration program

Contextual Info: ADS1230 www.ti.com SBAS366B – OCTOBER 2006 – REVISED SEPTEMBER 2012 20-Bit Analog-to-Digital Converter For Bridge Sensors Check for Samples: ADS1230 FEATURES DESCRIPTION • • • • The ADS1230 is a precision 20-bit analog-to-digital converter ADC . With an onboard low-noise

Contextual Info: TPS40422 www.ti.com SLUSAQ4C – OCTOBER 2011 – REVISED AUGUST 2012 Dual-Output or Two-Phase Synchronous Buck Controller with PMBus Check for Samples: TPS40422 FEATURES APPLICATIONS • • • • • • • 1 • • • • • • • • • • •

Contextual Info: STD6N95K5, STP6N95K5, STW6N95K5, STU6N95K5 N-channel 950 V, 1 Ω typ., 9 A Zener-protected SuperMESH 5 Power MOSFETs in DPAK, TO-220, TO-247 and IPAK packages Datasheet - production data Features TAB TAB Order codes 3 1 DPAK 3 1 2 VDS RDS on max. ID PTOT

IN250

Abstract: 49ball BQ24160YFFR
Contextual Info: bq24160, bq24161 bq24163, bq24168 www.ti.com SLUSAO0A – NOVEMBER 2011 – REVISED MARCH 2012 2.5A, Dual-Input, Single Cell Switchmode Li-Ion Battery Charger with Power Path Management and I2C Interface Check for Samples: bq24160, bq24161, bq24163, bq24168

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: TPS2552, TPS2553 TPS2552-1, TPS2553-1 SLVS841E – NOVEMBER 2008 – REVISED FEBRUARY 2012 www.ti.com PRECISION ADJUSTABLE CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES Check for Samples: TPS2552, TPS2553, TPS2552-1, TPS2553-1 FEATURES DESCRIPTION • • •