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    Texas Instruments TMS320F2806NMFAR

    32-bit Microcontrollers - MCU C2000 32-bit MCU wi th 100 MHz 64 KB fl
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    Mouser Electronics TMS320F2806NMFAR 1,000
    • 1 $18.05
    • 10 $14.37
    • 100 $12.43
    • 1000 $11.41
    • 10000 $11.41
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    Texas Instruments TMS320F2806NMFS

    32-bit Microcontrollers - MCU C2000 32-bit MCU wi th 100 MHz 64 KB fl A 595-TMS320F2806NMFA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TMS320F2806NMFS 833
    • 1 $23.03
    • 10 $18.46
    • 100 $17.29
    • 1000 $15.26
    • 10000 $15.26
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    Seiko Epson Corporation TG2016SMN 38.4000M-ECGNNM0

    TCXO Oscillators TG2016SMN 38.4000M-ECGNNM0: TCXO 1.8V 0.5PPM -40 85C NON O/E 1K TR
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    Mouser Electronics TG2016SMN 38.4000M-ECGNNM0 742
    • 1 $1.1
    • 10 $1.1
    • 100 $1.1
    • 1000 $1.09
    • 10000 $0.872
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    Amphenol Corporation 908-NM43200

    RF Connectors / Coaxial Connectors MMCX R/A PLUG RG-178
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 908-NM43200 607
    • 1 $22.39
    • 10 $18.24
    • 100 $14.87
    • 1000 $13.5
    • 10000 $13.5
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    Texas Instruments TMS320F28015NMFA

    32-bit Microcontrollers - MCU C2000 32-bit MCU wi th 60 MHz 32 KB fla
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TMS320F28015NMFA 344
    • 1 $6.42
    • 10 $4.97
    • 100 $4.33
    • 1000 $4.32
    • 10000 $4.3
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    320 NM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ixys mcc 132 12

    Abstract: No abstract text available
    Text: Date: 08.08.2011 IXYS Data Sheet Issue: 1 Thyristor/Diode Modules M## 320 Absolute Maximum Ratings VRRM VDRM [V] MCC MCD MDC 3000 320-30io2 320-30io2 320-30io2 3200 320-32io2 320-32io2 320-32io2 3400 320-34io2 320-34io2 320-34io2 3600 320-36io2 320-36io2 320-36io2


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    320-30io2 320-32io2 320-34io2 320-36io2 ixys mcc 132 12 PDF

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    Abstract: No abstract text available
    Text: NPN-Silizium-Fototransistor im SMT TOPLED -Gehäuse Silicon NPN Phototransistor in SMT TOPLED®-Package SFH 320 SFH 320 FA SFH 320 SFH 320 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1150 nm SFH 320 und bei 880 nm (SFH 320 FA)


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    Q62702-P0961 Q62702-P390 Q62702-P3602 Q62702-P1606 PDF

    Q65110A2510

    Abstract: No abstract text available
    Text: 2007-05-10 Silicon NPN Phototransistor in SMT TOPLED -Package NPN-Silizium-Fototransistor im SMT TOPLED®-Gehäuse Version 1.0 SFH 320, SFH 320 FA SFH 320 SFH 320 FA Features: Besondere Merkmale: • Spectral range of sensitivity: 450 nm . 1150 nm SFH 320 , 750 nm . 1120 nm (SFH 320 FA)


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    D-93055 Q65110A2510 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2014-06-04 Silicon NPN Phototransistor in SMT TOPLED -Package NPN-Silizium-Fototransistor im SMT TOPLED ®-Gehäuse Version 1.2 SFH 320, SFH 320 FA SFH 320 SFH 320 FA / FAG Features: Besondere Merkmale: • Spectral range of sensitivity: 450 nm . 1150 nm SFH 320 , 750 nm . 1120 nm (SFH 320 FA)


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    D-93055 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2014-01-14 Silicon NPN Phototransistor in SMT TOPLED -Package NPN-Silizium-Fototransistor im SMT TOPLED®-Gehäuse Version 1.1 SFH 320, SFH 320 FA SFH 320 SFH 320 FA Features: Besondere Merkmale: • Spectral range of sensitivity: 450 nm . 1150 nm SFH 320 , 750 nm . 1120 nm (SFH 320 FA)


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    D-93055 PDF

    diode skn 170 semikron

    Abstract: metal rectifier diode skr 130 SKN320 Semikron SKR 20 SKR 870 I18N metal rectifier diode skr 300 SKN 170 DIN41814 RECTIFIER DIODE SKN 2700
    Text: 5EMIKR0N Vrsm Vrrm Ifhms maximum values for continuous operation 700 A IfaV (sin. 180; Tease — 100 C) 420 A V 400 A $ $ _ 200 SKN 320/02 SKR 320/02 400 SKN 320/04 800 SKN 320/08 SKR 320/04 SKR 320/08 - 1200 1400 SKN 320/12 SKN 320/14 SKR 320/12 - 1600


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    813bb71 00Db325 B8-27 SKN320 SKN450 DO-200 diode skn 170 semikron metal rectifier diode skr 130 Semikron SKR 20 SKR 870 I18N metal rectifier diode skr 300 SKN 170 DIN41814 RECTIFIER DIODE SKN 2700 PDF

    Q62702-P0961

    Abstract: Q62702-P0988 Q62702-P1606 Q62702-P1607 Q62702-P3601 Q62702-P3602 Q62702-P390 Q62702-P393
    Text: NPN-Silizium-Fototransistor im SMT TOPLED-Gehäuse Silicon NPN Phototransistor in SMT TOPLED-Package SFH 320 SFH 320 FA SFH 320 SFH 320 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1150 nm SFH 320 und bei


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    metal rectifier diode skr 300

    Abstract: RECTIFIER DIODE SKN 2700 SKR 870 Semikron SKR diode SKN skn diodes semikron skn 320/02 diode skn 20 semikron skn 320/12 DIN41814
    Text: VRSM VRRM IFRMS maximum values for continuous operation 700 A IFAV (sin. 180; Tcase = 100 °C) 420 A 400 A Rectifier Diodes SKN 320 SKN 400 SKR 320 V 200 400 800 1200 1400 1600 1800 2400 2700 3000 SKN 320/02 SKN 320/04 SKN 320/08 SKN 320/12 SKN 320/14 SKN 320/16


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    Nm/530 DO-200 metal rectifier diode skr 300 RECTIFIER DIODE SKN 2700 SKR 870 Semikron SKR diode SKN skn diodes semikron skn 320/02 diode skn 20 semikron skn 320/12 DIN41814 PDF

    P3601

    Abstract: Q62702-P0961 Q62702-P0988 Q62702-P1606 Q62702-P1607 Q62702-P3601 Q62702-P3602 Q62702-P390 Q62702-P393 marking 320 ON
    Text: NPN-Silizium-Fototransistor im SMT TOPLED -Gehäuse Silicon NPN Phototransistor in SMT TOPLED®-Package SFH 320 SFH 320 FA SFH 320 SFH 320 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1150 nm SFH 320 und bei


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    semikron skn 320/02

    Abstract: Semikron SKR 26 /02 Semikron SKR 26 /12 metal rectifier diode skr 300 semikron skn 320/12 high voltage rectifier diode semikron 320/16 semikron skr 320-04 Semikron SKR 40 /12 skn 320/02
    Text: VRSM VRRM IFRMS maximum values for continuous operation 700 A IFAV (sin. 180; Tcase = 100 °C) 420 A 400 A Rectifier Diodes SKN 320 SKN 400 SKR 320 V 200 400 800 1200 1400 1600 1800 2400 2700 3000 SKN 320/02 SKN 320/04 SKN 320/08 SKN 320/12 SKN 320/14 SKN 320/16


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    Nm/530 semikron skn 320/02 Semikron SKR 26 /02 Semikron SKR 26 /12 metal rectifier diode skr 300 semikron skn 320/12 high voltage rectifier diode semikron 320/16 semikron skr 320-04 Semikron SKR 40 /12 skn 320/02 PDF

    SKN 170

    Abstract: No abstract text available
    Text: SKN 320/SKR 320 FRMS — 7 0 0 * i SKN 320/04 SKR 320/04* 400 V V rsm 400 V V rrm I fav SKN 320/08 SKR 320/08* I fsm 1400 V 1600 V 800 V 1200 V 1400 V 1600 V 420 A Tcose = 125°C , sin. 180°el 320 A 700 A K 0,55 K 0,55 F K 0,1 F (sin. 180 °el) 195 A


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    Q65110A2510

    Abstract: Q65110A2475
    Text: NPN-Silizium-Fototransistor im SMT TOPLED -Gehäuse Silicon NPN Phototransistor in SMT TOPLED®-Package Lead Pb Free Product - RoHS Compliant SFH 320 SFH 320 FA SFH 320 SFH 320 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich


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    foto transistor

    Abstract: phototransistor 650 nm P1606 sfh 97 Q62702-P0961 Q62702-P0988 Q62702-P1606 Q62702-P1607 Q62702-P390 Q62702-P393
    Text: SFH 320 SFH 320 FA SFH 320 SFH 320 FA fplf6724 fpl06724 NPN-Silizium-Fototransistor im  SMT TOPLED -Gehäuse Silicon NPN Phototransistor in  SMT TOPLED -Package Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale


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    fplf6724 fpl06724 IPCE/IPCE25o foto transistor phototransistor 650 nm P1606 sfh 97 Q62702-P0961 Q62702-P0988 Q62702-P1606 Q62702-P1607 Q62702-P390 Q62702-P393 PDF

    Q65110A2510

    Abstract: No abstract text available
    Text: NPN-Silizium-Fototransistor im SMT TOPLED -Gehäuse Silicon NPN Phototransistor in SMT TOPLED®-Package Lead Pb Free Product - RoHS Compliant SFH 320 SFH 320 FA SFH 320 SFH 320 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich


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    Untitled

    Abstract: No abstract text available
    Text: NPN-Silizium-Fototransistor im SMT TOPLED -Gehäuse Silicon NPN Phototransistor in SMT TOPLED®-Package Lead Pb Free Product - RoHS Compliant SFH 320 SFH 320 FA SFH 320 SFH 320 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich


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    Untitled

    Abstract: No abstract text available
    Text: Selection Guide Spectral Response Range nm Features Major Applications Type No. Listed Page I I I I I I 200 400 600 800 1000 1200 Si Photodiodes 1100 190 1000 190 320 1100 730 320 1100 320 UV to IR range, fo r pre cisio n p h o to m e try U V to visib le ra nge w ith


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    S1087-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet OVR 40-320 d440 P - Rev. 2004-02-11 2CTD432204F1701.pdf OVR 40-320 d440 P Order code : 2CTB 8139 51 R 18 00 Pluggable Unit Electrical characteristics Types of networks OVR 40-320 d440 P Overall dimensions in mm Operating diagram TT - TNS - TNC


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    2CTD432204F1701 PDF

    IRK 92

    Abstract: irk 60 IRKC
    Text: IRK * 320 Series Power Module 320 Amp IRKD IRKC IRKJ IRKE 1 1 1 2 2 2 2 3 3 3 1 Case Style :DOUBLE TOP MAXIMUM RATINGS (Tj = 25 OC unless stated otherwise) * Insert "D" "C" "J" or "E" for circuit configuration Symbol IRK(*) 320-04 Repetitive Peak Reverse Voltage


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    100OC I2000 150OC IRK 92 irk 60 IRKC PDF

    TLS320

    Abstract: tlsr Telefunken LED
    Text: TELEFUNKEN ELECTRONIC 17E D • ß^EOO^b ÜDO^Obfl TLS.320. TTlOJipyiMKiKlelectronic T - M- l- S 3 Creative Technologies Symbol LED's — 0 3 m m O in tinted top diffused package Red TLSR 320. GaAsP on GaAs TLSO 320. GaAsP on GaP Yellow T LSY320. GaAsP on GaP


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    LSY320. Q0S073 00DS07M TLS320 tlsr Telefunken LED PDF

    C956

    Abstract: E717-21 C956 hamamatsu solar converter dc to dc diagram T106-10-6 E717 E678-11A R7154 6dy5 e717-63
    Text: PHOTOMULTIPLIER TUBE R7154 High Sensitivity Solar Blind Photocathode 160 to 320 nm 28mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type FEATURES Spectral Response . 160 to 320 nm Cathode Sensitivity Radiant at 254 nm . 62mA/W Typ.


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    R7154 62mA/W 05A/W TPMSF0073 S-164-40 TPMS1036E01 C956 E717-21 C956 hamamatsu solar converter dc to dc diagram T106-10-6 E717 E678-11A R7154 6dy5 e717-63 PDF

    Hamamatsu Photomultiplier Tube C6270

    Abstract: No abstract text available
    Text: PHOTOMULTIPLIER TUBE R7154 High Sensitivity Solar Blind Photocathode 160 nm to 320 nm 28 mm (1-1/8 Inch) Diameter, 9-stage, Side-on Type FEATURES ●Spectral Response . 160 nm to 320 nm ●Cathode Sensitivity Radiant at 254 nm . 62 mA/W Typ.


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    R7154 SE-171-41 TPMS1036E03 Hamamatsu Photomultiplier Tube C6270 PDF

    ir remote power meter

    Abstract: spectrophotometer G1746
    Text: Selection Guide Spectral Response Range nm 400 600 800 1000 200 _l I I I Feature Major Application Type No. 1200 I I 1 Listed : Pa9e Si Photodiodes 190 1100 190 1000 320 1100 320 UV to IR range, for precision photometry


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    S1336/S S1226/S 1227ngth S2381, S2382 S5139, S6045 S5343, S5344 S5345 ir remote power meter spectrophotometer G1746 PDF

    E17A

    Abstract: SKR 870 diode skn 170 semikron semikron skn 320/02 Semikron SKR320 skn diodes B832 DIN41814 semikron skr 100 DO-200
    Text: S1E D • B13fc.fc.71 0003670 533 « S E K G SEMIKRDN SENIKRON INC V rsm Ifrms maximum values for continuous operation V rrm 700 A SKN 320 SKR 320 SKN 400_ IfaV (sin. 180; Tease = 100 °C) 420 A V 200 400 800 1200 1600 1800 2400 2700 3000 SKR 320/02


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    fll3bb71 B8-33 T-01-23 M24x1 DO-200 E17A SKR 870 diode skn 170 semikron semikron skn 320/02 Semikron SKR320 skn diodes B832 DIN41814 semikron skr 100 PDF

    S5052

    Abstract: S5673
    Text: Si PIN Photodiodes 3 Dimensional Spectral Response Range Peak Sensitivity Wavelength Area X Xp (mm) (mm2) (nm) (nm) 320 to 1000 800 0.46 (>3.0 7.0 320 to 1060 920 0.53 960 0.56 920 0.65 Active Area Effective Active Type No. Outline Package (P.52) Size S5052


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    S5052 S5573 S6977-01 S6036 S6036-01 S6436 S6801 S6801-01 S6968 S5673 PDF