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    TE Connectivity 44A9083-16-9CS2382

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    SOURIAU-SUNBANK S2382-6507R34

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    SOURIAU-SUNBANK S2382-7416R34

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    SOURIAU-SUNBANK S2382-6404R34

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    S2382 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S2382 Hamamatsu Si APD - Low bias operation, for 800 nm band Original PDF
    S2382 Hamamatsu PHOTODIODE AVALANCHE MODULE 800NM 0.5A/W SENSITIVITY 3TO-18 Original PDF
    S2382 Hamamatsu Photonics Si APD Scan PDF

    S2382 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884 Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings


    Original     		PDF S2381 S2385, S5139, S8611, S3884 S2382 S5139 S8611 S2383

    S2381

    Abstract: S2382 S2383 S2383-10 S2384 S2385 S3884 S5139 S8611 Si apd photodiode rangefinder
    Text: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884 Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings


    Original     		PDF S2381 S2385, S5139, S8611, S3884 S2381 S2382 S5139 S8611 S2383 S2382 S2383 S2383-10 S2384 S2385 S3884 S5139 S8611 Si apd photodiode rangefinder

    S2381

    Abstract: Si apd photodiode S2382 S2383 S2383-10 S2384 S2385 S3884 S5139 S4315-02
    Text: PHOTODIODE Si APD S2381 to S2385, S5139, S3884 Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Optical fiber communications l Spatial light transmission l Rangefinder


    Original     		PDF S2381 S2385, S5139, S3884 S2381 S2382 S5139 S2383 S2383-10 Si apd photodiode S2382 S2383 S2383-10 S2384 S2385 S3884 S5139 S4315-02

    S4315

    Abstract: S5139 s2381 S2382 S2383 S2383-10 S2384 S2385 S3884 S8611
    Text: PHOTODIODE Si APD S2381~S2385, S5139, S8611, S3884, S4315シリーズ 低バイアス動作タイプ800 nm帯用APD 特長 用途 l 低バイアスで安定動作が可能 l 高速応答 l 高感度、低雑音 l 空間光伝送 l 距離計 • 一般定格／絶対最大定格


    Original     		PDF S2381S2385, S5139, S8611, S3884, S4315 S2381 S2382 S5139 S8611 S2383 S4315 S5139 s2381 S2382 S2383 S2383-10 S2384 S2385 S3884 S8611

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884, S4315 series Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings


    Original     		PDF S2381 S2385, S5139, S8611, S3884, S4315 S2381 S2382 S5139 S8611

    S2383

    Abstract: No abstract text available
    Text: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884, S4315 series Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings


    Original     		PDF S2381 S2385, S5139, S8611, S3884, S4315 S2382 S5139 S8611 S2383

    Untitled

    Abstract: No abstract text available
    Text: Si APD S12023シリーズなど 低バイアス動作タイプ800 nm帯用APD 800 nm帯の近赤外域用のSi APDで、200 V以下の低電圧で動作が可能です。空間光伝送・光波距離計などの用途に適して います。 特長 用途


    Original     		PDF S12023ã S12023-02 S12023-05 S12051 S12086 S12023-10 S12023-10A S3884 S2384 S2385

    Untitled

    Abstract: No abstract text available
    Text: Si APD S12023 series, etc. Low bias operation, for 800 nm band These are 800 nm band near-infrared Si APDs that can operate at low voltages, 200 V or less. They are suitable for applications such as FSO free space optics and optical rangefinders. Features


    Original     		PDF S12023 S12023-02 S12023-05 S12051 S12086 S12023-10 S12023-10A S3884 S2384 S2385

    s2381

    Abstract: S2382 S2383-10 S2383 S2384 S2385 S3884 S5139 S8611
    Text: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884 Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings


    Original     		PDF S2381 S2385, S5139, S8611, S3884 S2381 S2382 S5139 S8611 S2383 S2382 S2383-10 S2383 S2384 S2385 S3884 S5139 S8611

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884 Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings


    Original     		PDF S2381 S2385, S5139, S8611, S3884 S2381 S2382 S5139 S8611 S2383

    Ge APD

    Abstract: Si apd photodiode pin photodiode 6 pF TO5 avalanche Photodiode 300 nm
    Text: Silicon Avalanche Photodiodes Dimensional Outline P.38,39 / Window Material*' Type No. S2381 S2382 O /K S2383 Spectral Response Range A Active Area Effective Active Package Size Area (mm) (mm2) TO-18 560.2 0.03 TO-18 ¿ 0.5 0.19 TO -18 ¿1.0 0.78 S3884 /K


    OCR Scan     		PDF 800nm S2381 S2382 S2383 S3884 S2384 S2385 S2382, S3884. Ge APD Si apd photodiode pin photodiode 6 pF TO5 avalanche Photodiode 300 nm

    S2381

    Abstract: S4315-02
    Text: Si APDS Type No. Low-bias Operation Types, for 800 nm Range Dimensional Outline (P.46, 4 7)1 Window Material ' 1 S2381 Package Effective Active Area Active Size Area (mm) (mm2) <(>0.2 0.03 00.5 0.19 4>1-0 0.78 4)1.5 1.77 /K S2382 (NEW) -Effective *3


    OCR Scan     		PDF S2381 S2382 S5139 S2383 S2383-10 S3884 S2384 S2385 S2383-10 S5139 S4315-02

    Untitled

    Abstract: No abstract text available
    Text: Si APDs Type No. MaaibDi GOümßß sos Low Bias Operation, for 800 nm Range Dimensional Outline (P.44,45)/ W indow Material Effective Package Active Area® Sizij (mm) Effective Active Area (mm2) S2381 56 0 . 2 0.03 S2382 ¿ 0.5 0.19 5 6 1 .0 0.78 ¿ 1 .5


    OCR Scan     		PDF S2381 S2382 S2383 S2383-10Â S3884 S2384 S2385 S2383-10 S5344, S5345

    G1125-02

    Abstract: S2216 02 S1863 G1126-02
    Text: HAMAMATSU CORP ITE D • 422^0^ 00G2534 1 ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Typical Radiant Sensitivity A/W Outlines Type No. Window Materials Characteristics (25°C) Package (mm) Size Effective Area Range Peak Wave­ length


    OCR Scan     		PDF 00G2534 254nm 560nm 633nm G1125-02 G1126-02 G1127-02 G2119 G1745 G1746 S2216 02 S1863

    ir remote power meter

    Abstract: spectrophotometer G1746
    Text: Selection Guide Spectral Response Range nm 400 600 800 1000 200 _l I I I Feature Major Application Type No. 1200 I I 1 Listed : Pa9e Si Photodiodes 190 1100 190 1000 320 1100 320 UV to IR range, for precision photometry


    OCR Scan     		PDF S1336/S S1226/S 1227ngth S2381, S2382 S5139, S6045 S5343, S5344 S5345 ir remote power meter spectrophotometer G1746

    P873-G35-552

    Abstract: p1760-04 P873-13
    Text: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and


    OCR Scan     		PDF S-114 DK-2000 JAN/87 P873-G35-552 p1760-04 P873-13

    S4315

    Abstract: APD reverse bias stability C5331 Si apd photodiode 10NAX S2385 52384 kap06 Si apd photodiode rangefinder S2381
    Text: Si APDs Type No. Low-bias Operation Types, for 800 nm Range Dimensional O utline (P.46, 47)/ W indow M a te ria l-1 Package S2381 Effective '3 Effective Active Area Active Size Area (mm) (mm2) Ô0.2 0.03 (J)0.5 0.19 (>1.0 0.78 <t>1.5 1.77 Spectral Response


    OCR Scan     		PDF S2381 S2382 S5139 S2383 S2383-10 S3884 S2384 S2385 S2383-10 C5460 S4315 APD reverse bias stability C5331 Si apd photodiode 10NAX S2385 52384 kap06 Si apd photodiode rangefinder

    S1722-01

    Abstract: S1723-04 S1723-06 S1723-08 S-1721 S1721 S1863 G1117 si7202 S2164-01
    Text: HAMAMATSU CORP 11E D • 452=^0= Q G G 2 S 3 0 4 ■ T ^ m - 6 3 PIN Silicon Photodiodes Photosensitive Surface Spectral Response Characteristics at 25°C) Radiant Sensitivity Typ. (A/W) Outlines Type No. Features S1722 2.54mm dia. sensitive area, for visible to IR


    OCR Scan     		PDF S1721 S1722 S1722-01 S1722-02 S1863 S1863-01 S1723-04 S1723-08 S1723-06 S1723-05 S-1721 G1117 si7202 S2164-01

    S3407

    Abstract: S4036 S5533
    Text: Dimensional Outlines Unit : m m O S1226-18BQ, etc. 0 S1190-01, etc. 0 S2386-18L # 5 4 -0 2 WI NDOW iy o *o¿ ^ 4 PS > 0 j o 0 S5531, S5532, S5533 0 S2216-01, etc. O S1190-13 2 ^ r> 4 t ü i- 4 fih ‘ :i i V* 4 6>cj • 0 1 : o -cP -l: • > *'<i Y", 5 K 1 y jtj ¡Inirosiln . it«- ijl.iss!


    OCR Scan     		PDF S1226-18BQ, S2386-18L S1190-01, S1190-13 S2216-01, S5531, S5532, S5533 S2381, S2382, S3407 S4036 S5533

    GaP photodiode APD

    Abstract: uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode
    Text: Index by Type No Type No. Name Page S1087. .Si Photodiode Visible/Visible to IR Range, tor General Photometry . 22, 23 S1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23


    OCR Scan     		PDF S1087. S1087-01 G1115 G1116 G1117 G1118 G1120 G1126-02. S6801-01 S6926. GaP photodiode APD uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode

    S4315-02

    Abstract: K800
    Text: Si APDs Low-bias Operation Types, for 800 nm Range - Type No. Dim ensional Outline (P.46, 47)/ W indow M aterial "1 P a ck ag e Spectral R e sp o n se R ange Area X Peak Sensitivity W avelength Àp Photo Sensitivity M=1 ^=800 nm Quantum


    OCR Scan     		PDF S2383-10 S2382, S2383, S3884. S2381 S2365, S3884 KAPDB0007EC KAPDB0031EA S4315-02 K800

    Untitled

    Abstract: No abstract text available
    Text: HAMAMATSU CÔRP ITE D • 452^01 0GG5532 A ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Outlines Type No. Window Materials Package mm Size Effective Area Range Peak Wave­ length (mm) (mm2) (nm) (nm) Characteristics (25°C) Typical Radiant Sensitivity (A/W) Short Circuit Current


    OCR Scan     		PDF 0GG5532 560nm 633nm G1116 G1117 G1118 G1120 S1133, S1133-03, S1787

    S3884

    Abstract: G1116
    Text: GaAsP Photodiodes Soecfrai Response Hange Ü Typ« No U nle ss o tn e rw ise noted, Typ T a - 2. Package Peak SensÜMy W »wíe«#ti Ä# Phcflp Sanwfcvtfy 5 k&Q (am (AAV) ’ »imi {mm} ShW! CînXHt Current tec 100 h V»*10 mV 2456 * Mg? Xsâp • fiarfc


    OCR Scan     		PDF 31-V0I5' G1115 G1116 G1120 G3067 G2711-01 G1735 G1736 Gf737 G1738 S3884

    photodiode

    Abstract: schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE
    Text: Index by Type No. Type No. Name Page S 1087. .Si Photodiode Visible/Visible to IR Range, for General Photometry . . 22, 23 S 1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23


    OCR Scan     		PDF G1115 G1116 G1117 G1118 G1120 G1126-02. S5107. S5139. S5343. S5344 photodiode schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE