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    Bimba Manufacturing Company EF-3230-1M

    Cylinder, single end rod, EF-I, 32mm Bore; Stroke: 30 mm(s); Threaded Bottom 1 | Bimba EF-3230-1M
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    Bimba Manufacturing Company EFD-3230-1M

    Cylinder, dbl end rod, EF-I, 32mm Bore; Stroke: 30 mm(s); Threaded Bottom 1; Ma | Bimba EFD-3230-1M
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    RS EFD-3230-1M Bulk 5 Weeks 1
    • 1 $203.59
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    32301M Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TME 57

    Abstract: D02S D012 D031 EDI8M3264C
    Text: ELECTRONIC DESIGNS I NC S1E D 32301m ü0012Sfa S7b B E L D ^ED I EDI8M3264C Electronic Design» tnc.a High Speed Two Megabit SRAM Module 64Kx32 Static RAM CMOS, High Speed Module T -V i6 - 2 3 -JY Features The EDI8M3264Cis a high speed 2megabit State RAM 64Kx32 bit CMOS Static


    OCR Scan     		000125b EDI8M3264C 64Kx32 EDI8M3264C 64Kx4 oI8M3264C 3S30114 00012h0 EDI8U3264C TME 57 D02S D012 D031 PDF

    Untitled

    Abstract: No abstract text available
    Text: ELECTRONIC DESIGNS INC 30 E D • 32301m 0000730 M ■ EDI8F8512C/LP/P m D i Ettekonle Dtslgni In«. • Commercial Four Megabit S R A M Module 512Kx8 Static R A M CM O S, Module P IS lU iO Features iá O T T - V 6 - Z 3 - H The EDI8F8512C/LP/P is a 4096K b'lt CMOS Static 512Kx8 bit CMOS Static


    OCR Scan     		32301m EDI8F8512C/LP/P 512Kx8 EDI8F8512C/LP/P 4096K 128Kx8 150ns T-46-23-14 PDF

    CDQ15

    Abstract: COOA EDH816H64C 1024K-BIT
    Text: ELECTRONIC D E S I GN S INC 30E D • 32301m ■ EDI 0dQat.3b 1 ■ ED H 8 1 6 H 6 4 C E t*d ic n le D tilg ra I n c . High Speed Megabit SRAM Module 64Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDH816H64C Isa 1024K-bit high speed CMOS


    OCR Scan     		EDH816H64C 64Kx16 EDH816H64C 1024K-bit 64Kx1 64Kx4 128Kx8 256Kx4 CDQ15 COOA PDF

    T1IS

    Abstract: GQQ0731 ragy 3530114
    Text: ELECTRONIC DESIGNS INC 30 E D • 32301m 0000730 M ■ EDI8F8512C/LP/P m D i Ettekonle Dtslgni In«. • Commercial Four Megabit S R A M Module 512Kx8 Static R A M CM O S, Module P IS lU iO Features iá O T T - V 6 - Z 3 - H The EDI8F8512C/LP/P is a 4096K b'lt CMOS Static 512Kx8 bit CMOS Static


    OCR Scan     		EDI8F8512C/LP/P 512Kx8 EDI8F8512C/LP/P 4096K 128Kx8 28Kx8 G0G0734 T-46-23-14 353011M T1IS GQQ0731 ragy 3530114 PDF

    Untitled

    Abstract: No abstract text available
    Text: M D \ ELECTRONIC QE9GN& N C . EDI7P16xxxA TA/CF A Features General Description Type II, Type 111 and Compact Flash packaging ATA Flash PC Cards Densities from 2MB to 220MB EDI's ATA Flash Memory PC Card series offers a full • Compact Flash - 2MB to 24MB


    OCR Scan     		EDI7P16xxxA 220MB 110MB car04 EDI7P16xxxATA00Z EDI7P16xxxCFA00Z 175MB PDF

    WA126

    Abstract: GA-311
    Text: ^ E D EDI9F81025C I e le c tro n s : designs, n c .1 2x512Kx8 SRAM Module 2x512Kx8 Static RAM CMOS, Module Features The EDI9F81025C is an 8 megabit CMOS Static RAM based on 2x512Kx8 bit CMOS Static two 512Kx8 Static RAMs mounted on a multi-layered epoxy Random Access Memory


    OCR Scan     		EDI9F81025C 2x512Kx8 100ns EDI9F81025LP) EDI9F81025C 512Kx8 WA126 GA-311 PDF

    T2D 53

    Abstract: T2D 44 CNC34 EDBF2464CRW ca1342 t2d 96 41A123 T2D 48 t2d 46 T2D 56
    Text: ^EDI EDI8F2464C 61ÉCTRONC 065K3NS N C . 64Kx24 SRAM Module 64Kx24 Static RAM CMOS, High Speed Module Features The EDI8F2464C is a high speed 1.5 megabit Static RAM 64Kx24 bit CMOS Static module organized as 64Kx24. This module is constructed Random Access Memory


    OCR Scan     		065H3NS EDI8F2464C 64Kx24 EDI8F2464C 64Kx24. 64Kx4 323G114 T2D 53 T2D 44 CNC34 EDBF2464CRW ca1342 t2d 96 41A123 T2D 48 t2d 46 T2D 56 PDF

    9CTI

    Abstract: S28B 9CTI 10 pin ic EC017 ED1784MS EDJ7
    Text: EDI784MS V m 4Megx8NAND Flash f lE C T R O M C O CSG N & N C . PRELIMINARY 4Mx8 B it NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density


    OCR Scan     		ED1784MS 250ns EDI784MSV EDI784MSV50BB EDI784MSV50FB EDI784MSV50B8 EDI784MSV506C 24/32Pin 300MN 3530im 9CTI S28B 9CTI 10 pin ic EC017 EDJ7 PDF

    D012

    Abstract: D019 D020 D023 EDI8F32128C t462
    Text: ELECTRONIC m DESIGNS INC SIE ]> • 323G114 a OGOlOTb 3=50 H E L D E D I8 F 3 2 1 2 8 C Etoctrenle DülQfMInc. High Speed Four Megabit SRAM Module MMMAm 128Kx32 Static RAM CMOS, High Speed Module Features The EDI8F32128C isa high speed4 megabitStatic RAM module organized as 128K words by 32 bits. This module is


    OCR Scan     		323G114 EDI8F32128C 128Kx32 EDI8F32128Cisahighspeed4megabitStatic 128Kx8 EDI8F32128C EDI8F32128C15MMC EDISF32128C20MMC EDI8F32128C25MMC D012 D019 D020 D023 t462 PDF

    Untitled

    Abstract: No abstract text available
    Text: W D EDI8F32513C Ì 512Kx32 Battery Backed ELECTRONIC DESIGNS. INC. SRAM Module ADVANCED Features 512Kx32 bit C M O S Static Random Access Memory with on-board battery backup 512Kx32 Battery Backed SRAM Module • Access Times 70 and 85ns The EDI8F32513C is a 16 megabit Battery Backed S R A M


    OCR Scan     		EDI8F32513C 512Kx32 EDI8F32513C 512Kx 512Kx8 KeeperEDI8F32513C S12Kx32 EDI8F32513C70MMC PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI8F81025C M D I ELECTRONIC DESIGNS \NCm Commercial Eight Megabit SRAM Module 1 Megabit x 8 iu m Static RAM CMOS, Module Features The EDI8F81025C is an 8 megabit CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate.


    OCR Scan     		EDI8F81025C EDI8F81025C 512Kx8 100ns EDI8F81025LP) EDI8F81025LP I8F81025C70B6C 70B6L PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI784MS V ^E D I 4Megx8NAND Flash flE C T B O M C OESGN& WC. PRELIMINARY 4Mx8 Bit NAND Flash CMOS, Monolithic F eatu res The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density


    OCR Scan     		EDI784MS EDI784MSV 528-byte 250ms funI784MSV EDI784MSV50BB ED1784MSV50FB EDI784MSV50BB EDI7MMSV50BC 300MW PDF

    4k51

    Abstract: Flash SIMM 80 programmer
    Text: ^ED I 2 ,4,8 EiCTDONIC DESIGN M egabyte FISSAI 512Kx32 Flash Module Features The EDI Flash Family is a five-volt-only in system Flash program­ 2,4,8 megabyte CMOS Flash Module Family Organization: mable and eraseable read only memory module. The modules are


    OCR Scan     		512Kx32 2x512Kx32 4x512Kx32 Time-120ns Time-10mS EDI7F32512CA120BNC EDI7F32512CA150BNC EDI7F232512CA120BNC EDI7F232512CA150BNC 4k51 Flash SIMM 80 programmer PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ E D I E D I 8 F 2 4 1 2 9 C Electronic Designs Inc. High Speed Three Megabit SRAM Module 128KX24 Static RAM CMOS, High Speed Module D P ÎF Û Ü M T D O M Features The EDI8F24129C is a high speed 3 megabit Static RAM module organized as 128K words by 24 bits. This


    OCR Scan     		EDI8F24129C 128KX24 EDI8F24129C 128Kx8 0001b PDF

    EDI88512C

    Abstract: ED188512C EDI88512C70CB EDI88512C100CB EDI88512C100LB EDI88512C70LB EDI88512C85CB EDI88512C85LB The32 ed188512
    Text: ELEC TRO NIC ^ E D D ES IG N S IN C SIE D • 3230114 0QD123Ö 550 M E L D E D I8 8 5 1 2 C I _ EI«drort c D rtg n * Inc. ■ — ■ — Four Megabit Monolithic SRAM h w y /M 512Kx8 Static RAM CMOS, Monoiithic F M ñ T []© íj


    OCR Scan     		35301m EDI88512C 512Kx8 EDI88512C The32 ED188512LP) MIL-STD-883, EDI88S12C70NB ED188512C EDI88512C70CB EDI88512C100CB EDI88512C100LB EDI88512C70LB EDI88512C85CB EDI88512C85LB ed188512 PDF

    EDI8F81024C

    Abstract: EDI8F81024C70BSC EDI8F81024C85BSC MELP
    Text: ELECTRONIC DESIGNS INC SIE D • 3S30114 0001130 b?T ■ ELD 82EDI EDI8F81024C Btdronlc DMlgra Ine. - Commercial Eight Megabit SRAM Module 1Megx8 Static RAM CMOS, Module Features The EDI8F81024C is a 8192K bit CMOS Static RAM based on eight 128Kx8 Static RAMs mounted on a multilayered epoxy laminate FR4 substrate.


    OCR Scan     		EDI8F81024C EDI8F81024C 8192K 128Kx8 EDI8F81024LP) operat25 EDI8F81024C70BSC EDI8F81024C85BSC MELP PDF

    EDI8L3265C

    Abstract: OQ23 "Electronic designs inc"
    Text: ^EDI EDI8L3265C ELECTRONIC DESIGNS INC. High Performance Two Megabit SRAM 64Kx32 CMOS High Speed Static RAM O IM F O ^ IiS \T I i Features The EDI8L3265C is a high speed, high performance, 64Kx32 bit CMOS Static four megabit density Static RAM organized as a 64Kx32 bit Random Access Memory Array


    OCR Scan     		EDI8L3265C 64Kx32 EDI8L3265C 128Kx16 EDI8L3265C, EDI8L3265C12AC EDI8L3265C15AC EDI8L3265C17AC EDI8L3265C20AC OQ23 "Electronic designs inc" PDF

    EDI8F32512C

    Abstract: fr4 substrate
    Text: EDI8F32512C Electronic Designs Inc. High Speed Sixteen Megabit SRAM Module 512Kx32 Static RAM CMOS, High Speed Module Features The EDI8F32512C is a high speed 16 megabit Static 512Kx32 bit CMOS Static RAM module organized as 512K words by 32 bits. This Random Access Memory


    OCR Scan     		EDI8F32512C 512Kx32 EDI8F32512C 512Kx8 fr4 substrate PDF

    EDI8C8512C35TM

    Abstract: EDI8C8512C45TM EDI8C8512C55TM
    Text: 22EDI EDI8C8512C Electronic Designs Inc. • Low Power Four Megabit SRAM Module 512Kx8 Static RAM CMOS, 0.4" Wide DIP Module Features The EDI8C8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted in a multi­ layered, multi-cavity ceramic substrate. This high speed


    OCR Scan     		22EDI EDI8C8512C 512Kx8 EDI8C8512C 4096K 128Kx8 323D11M EDI8C8512C35TM EDI8C8512C45TM EDI8C8512C55TM PDF

    256KX16

    Abstract: EDI8F16256C
    Text: EDI8F16256C K X '256KX16 SRAM Module GIECTOONC DCSIGNS, NC. 256Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8F16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of four 4 256Kx4 Static RAMs in High Density 4096K-bit CMOS Static


    OCR Scan     		EDI8F16256C 256KX16 4096K-bit 512Kx8 1024Kx4 EDI8F16256C 256Kx4 PDF

    Untitled

    Abstract: No abstract text available
    Text: m o i _ EDI8M8257C Electronic Designs Inc. High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C is a 2048K bit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic two megabit


    OCR Scan     		EDI8M8257C 256Kx8 EDI8M8257C 2048K 128Kx8 the128Kx8 EDI8M8257LP) 323011M PDF

    Untitled

    Abstract: No abstract text available
    Text: SEX EDI7C32128C ELECTRONIC DESIGNS INC. High Performance Four Megabit Flash EEPROM 128Kx32 CMOS Flash EEPROM Features The EDI7C32128C is a high performance, four megabit 128Kx32 bit C M O S Flash density Flash EEPROM organized as 128Kx32 bits. The • Five-volt-only reprogramming


    OCR Scan     		EDI7C32128C 128Kx32 EDI7C32128C 128Kx8 200ns I7C32128C120JM I7C32128C150JM I7C32128C200JM PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI9F321024C E IK T O O N C M SGNSL NC.I '1Megx32 SRAM Module 1 Meg x32 CMOS Static RAM Module Features The EDI9F321024C CMOS Static RAM Module is orga­ 1M egx32 bits CMOS Static nized as 1Meg x 32 bits. Random Access Memory Module The module is constructed from 3 2 128Kx8 Static RAMs in


    OCR Scan     		EDI9F321024C 1Megx32 EDI9F321024C egx32 128Kx8 EDI9F321024C35MCC EDI9F321024C45MCC 01581USA EDSF321024C PDF

    TME 57

    Abstract: No abstract text available
    Text: ^EDI EDI9F36256C ELECTRONIC DESIGNS MC. I 256Kx36 SRAM Module 256Kx36 CMOS High Speed Static RAM Features The EDI9F36256C is a high speed 9 megabit Static RAM 256Kx36 bit CMOS Static module organized as 256K words by 36 bits. Four chip selects E0-E3 are used to independently enable


    OCR Scan     		EDI9F36256C 256Kx36 EDI9F36256C EDI9F36256C20MZC EDI9F36256C25MZC TME 57 PDF