KMM53632000BK
Abstract: KMM53632000BKG
Text: DRAM MODULE KMM53632000BK/BKG KMM53632000BK/BKG Fast Page Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53632000B is a 32Mx36bits Dynamic RAM high density memory module. The Samsung KMM53632000B consists of sixteen CMOS 16Mx4bits and
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KMM53632000BK/BKG
KMM53632000BK/BKG
16Mx4
16Mx1,
KMM53632000B
32Mx36bits
16Mx4bits
16Mx1bit
72-pin
KMM53632000BK
KMM53632000BKG
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KMM53632004BK
Abstract: KMM53632004BKG
Text: DRAM MODULE KMM53632004BK/BKG KMM53632004BK/BKG EDO Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53632004B is a 32Mx36bits Dynamic RAM high density memory module. The Samsung KMM53632004B consists of sixteen CMOS 16Mx4bits and
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KMM53632004BK/BKG
KMM53632004BK/BKG
16Mx4
16Mx1
KMM53632004B
32Mx36bits
16Mx4bits
16Mx1bit
72-pin
KMM53632004BK
KMM53632004BKG
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KMM53632004BK
Abstract: KMM53632004BKG
Text: DRAM MODULE KMM53632004BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd.(4th.) generation of 64M(16M) components are applied for this module.
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KMM53632004BK/BKG
KMM53632004BK/BKG
16Mx4
16Mx1
KMM53632004B
32Mx36bits
16Mx4bits
16Mx1bit
KMM53632004BK
KMM53632004BKG
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53633201BE0/BJ0-C 4Byte 32Mx36 SIMM PDpin 16Mx4 & 16Mx1 base Revision 0.1 June 1998 DRAM MODULE M53633201BE0/BJ0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.
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M53633201BE0/BJ0-C
32Mx36
16Mx4
16Mx1
M53633201BE0/BJ0-C
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KMM53632004CK
Abstract: KMM53632004CKG
Text: DRAM MODULE KMM53632004CK/CKG 4Byte 32Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb components are applied for this module. KMM53632004CK/CKG DRAM MODULE KMM53632004CK/CKG
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KMM53632004CK/CKG
32Mx36
16Mx4
16Mx1
KMM53632004CK/CKG
KMM53632004C
KMM53632004CK
KMM53632004CKG
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53613201BE0/BJ0-C 4Byte 32Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.1 June 1998 DRAM MODULE M53613201BE0/BJ0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP (access time from col. addr.) in AC CHARACTERISTICS.
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M53613201BE0/BJ0-C
32Mx36
16Mx4
16Mx1
M53613201BE0/BJ0-C
16Mx1,
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KMM53632000CK
Abstract: KMM53632000CKG
Text: DRAM MODULE KMM53632000CK/CKG 4Byte 32Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb components are applied for this module. KMM53632000CK/CKG DRAM MODULE KMM53632000CK/CKG
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KMM53632000CK/CKG
32Mx36
16Mx4
16Mx1
KMM53632000CK/CKG
16Mx1,
KMM53632000C
KMM53632000CK
KMM53632000CKG
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53633201CE0/CJ0-C 4Byte 32Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb components are applied for this module. M53633201CE0/CJ0-C DRAM MODULE M53633201CE0/CJ0-C
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M53633201CE0/CJ0-C
32Mx36
16Mx4
16Mx1
M53633201CE0/CJ0-C
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KMM53632000BK
Abstract: KMM53632000BKG
Text: DRAM MODULE KMM53632000BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The3rd.(4th.) generation of 64M(16M) components are applied for this module.
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KMM53632000BK/BKG
KMM53632000BK/BKG
16Mx4
16Mx1,
KMM53632000B
32Mx36bits
16Mx4bits
16Mx1bit
KMM53632000BK
KMM53632000BKG
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53613201CE0/CJ0-C 4Byte 32Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb components are applied for this module. M53613201CE0/CJ0-C DRAM MODULE M53613201CE0/CJ0-C
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M53613201CE0/CJ0-C
32Mx36
16Mx4
16Mx1
M53613201CE0/CJ0-C
16Mx1,
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44C16104A
Abstract: 44c16104
Text: KM M53632004A K/A KG DRAM MODULE KM M53632004AK/AKG EDO Mode 32M X 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M53632004A is a 32Mx36bits RAM high density memory module. The Dynamic Samsung KM M 53632004A consists of sixteen CM O S 16Mx4bits and
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M53632004A
M53632004AK/AKG
16Mx4
16Mx1
32Mx36bits
M53632004AK
cycles/64ms
53632004AKG
44C16104A
44c16104
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM53632000BK/BKG KMM53632000BK/BKG Fast Page Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53632000B is a 32Mx36bits Dynamic RAM high density memory module. The Samsung KMM53632000B consists of sixteen CMOS 16Mx4bits and
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OCR Scan
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PDF
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KMM53632000BK/BKG
KMM53632000BK/BKG
16Mx4
16Mx1,
KMM53632000B
32Mx36bits
16Mx4bits
16Mx1
72-pin
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM53632004BK/BKG KMM53632004BK/BKG EDO Mode 32M X 36 DRAM SIMM Using 1 6Mx4 & 1 6Mx1 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53632004B is a 32Mx36bits Dynamic RAM high density memory module. The Samsung KMM53632004B consists of sixteen CMOS 16Mx4bits and
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OCR Scan
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KMM53632004BK/BKG
KMM53632004BK/BKG
KMM53632004B
32Mx36bits
16Mx4bits
16Mx1
72-pin
KMM53632004BK
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KM41C16000BK
Abstract: KMM53632000AK
Text: DRAM MODULE KMM53632000AK/AKG KMM53632000AK/AKG Fast Page Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53632000A is a 32Mx36bits Dynamic Part Identification RAM high density memory module. The Samsung
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KMM53632000AK/AKG
KMM53632000AK/AKG
16Mx4
16Mx1,
KMM53632000A
32Mx36bits
16Mx4bits
16Mx1bit
72-pin
KM41C16000BK
KMM53632000AK
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