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    KMM53632004BKG Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KMM53632004BKG Samsung Electronics 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh 5V Original PDF
    KMM53632004BKG-5 Samsung Electronics 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V Original PDF
    KMM53632004BKG-6 Samsung Electronics 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V Original PDF

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    KMM53632004BK

    Abstract: KMM53632004BKG
    Text: DRAM MODULE KMM53632004BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd.(4th.) generation of 64M(16M) components are applied for this module.


    Original     		PDF KMM53632004BK/BKG KMM53632004BK/BKG 16Mx4 16Mx1 KMM53632004B 32Mx36bits 16Mx4bits 16Mx1bit KMM53632004BK KMM53632004BKG

    KMM53632004BK

    Abstract: KMM53632004BKG
    Text: DRAM MODULE KMM53632004BK/BKG KMM53632004BK/BKG EDO Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53632004B is a 32Mx36bits Dynamic RAM high density memory module. The Samsung KMM53632004B consists of sixteen CMOS 16Mx4bits and


    Original     		PDF KMM53632004BK/BKG KMM53632004BK/BKG 16Mx4 16Mx1 KMM53632004B 32Mx36bits 16Mx4bits 16Mx1bit 72-pin KMM53632004BK KMM53632004BKG