Untitled
Abstract: No abstract text available
Text: AMIC TECHNOLOGY Taiwan , INC. Spec. No. : 04-83-002 Update : 12/17/1999 Pages : 1 of 9 TAPE&REEL PACKING SPECIFICAITON 1. Packing Procedures 2. Carrier Tape Dimensions - 28SOP,26/28SOJ,28TSOP,32sTSOP 3. Carrier Tape Dimensions - 32/40/44SOP,32/40SOJ,32/44/50TSOP,100QFP
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28SOP
26/28SOJ
28TSOP
32sTSOP
32/40/44SOP
32/40SOJ
32/44/50TSOP
100QFP
36/48Mini-BGA
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K6F2008S2E
Abstract: K6F2008S2E-F
Text: K6F2008S2E Family CMOS SRAM Document Title 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft February 28, 2001 1.0 Finalize September 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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K6F2008S2E
256Kx8
K6F2008S2E-F
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Untitled
Abstract: No abstract text available
Text: HY62KF08401C Series 512Kx8bit full CMOS SRAM Document Title 512K x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Mar.21.2001 Final 01 Changed Isb1 values Jun.07.2001 Final This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility
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HY62KF08401C
512Kx8bit
HY62KF08401C
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K6F1008U2C
Abstract: K6F1008U2C-YF70
Text: K6F1008U2C Family CMOS SRAM Document Title 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial Draft May 17, 2001 Preliminary 1.0 Finalized September 25, 2001 Final Revision No. The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
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K6F1008U2C
128Kx8
K6F1008U2C-YF70
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Untitled
Abstract: No abstract text available
Text: G -LINK GLT6200L08 Ultra Low Power 256k x 8 CMOS SRAM Aug 2001 Rev. 1.2 Features : Description : ∗ The GLT6200L08 is a low power CMOS Static RAM organized as 262,144 x 8 bits. Easy memory expansion is provided by an active LOW CE1 an Low-power consumption.
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GLT6200L08
GLT6200L08
32-sTSOP.
48Ball
36TYP
75TYP
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K6F2008U2E
Abstract: K6F2008U2E-EF55 K6F2008U2E-EF70 K6F2008U2E-YF55 K6F2008U2E-YF70 1024 256x8 SRAM
Text: K6F2008U2E Family CMOS SRAM Document Title 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft February 28, 2001 1.0 Finalize September 27, 2001 Final 2.0 Revise
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K6F2008U2E
256Kx8
55/Typ.
35/Typ.
K6F2008U2E-EF55
K6F2008U2E-EF70
K6F2008U2E-YF55
K6F2008U2E-YF70
1024 256x8 SRAM
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KM68FR1000AFI-10
Abstract: KM68FR1000AFI-7 KM68FR1000ATGI-10 KM68FR1000ATGI-7
Text: Advance KM68FR1000A Family CMOS SRAM Document Title 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM Revision History Revision No. 0.0 History Draft Data Remark Design target November 3, 1998 Advance The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
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KM68FR1000A
128Kx8
fabr75)
KM68FR1000AFI-10
KM68FR1000AFI-7
KM68FR1000ATGI-10
KM68FR1000ATGI-7
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Untitled
Abstract: No abstract text available
Text: Preliminary CMOS SRAM K6X4008T1F Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Data Remark July 29, 2002 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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K6X4008T1F
512Kx8
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KM68V512ALTE-10L
Abstract: 64Kx8 CMOS RAM KM68U512ALE-L
Text: KM68V512A, KM68U512A Family CMOS SRAM Document Title 64Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target January 17, 1996 Advance 0.1 Initial draft - One datasheet for commercial, extended and industrial product.
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KM68V512A,
KM68U512A
64Kx8
KM68V512A
32-sTSOP
KM68V512ALTE-10L
64Kx8 CMOS RAM
KM68U512ALE-L
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CS18LV
Abstract: 8X13 CS18LV10245 CS18LV10245CC CS18LV10245CI CS18LV10245DC CS18LV10245DI CS18LV10245EC CS18LV10245EI CS18LV10245LC
Text: High Speed Super Low Power SRAM CS18LV10245 128K-Word By 8 Bit DESCRIPTION The CS18LV10245 is a high performance, high speed and super low power CMOS Static Random Access Memory organized as 131,072 words by 8bits and operates from a wide range of 4.5 to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high
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CS18LV10245
128K-Word
CS18LV10245
55/70ns
32-pin
CS18LV
8X13
CS18LV10245CC
CS18LV10245CI
CS18LV10245DC
CS18LV10245DI
CS18LV10245EC
CS18LV10245EI
CS18LV10245LC
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K6F1008V2C-LF55
Abstract: K6F1008V2C-LF70 K6F1008V2C K6F1008V2C-F K6F1008V2C-YF55 K6F1008V2C-YF70 32-STSOP1
Text: K6F1008V2C Family CMOS SRAM Document Title 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial Draft November 27, 2001 Preliminary 0.1 Revise - Changed Package Type : 48 36 -TBGA-6.00x7.00 to 32-TSOP1-0813.4F
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K6F1008V2C
128Kx8
32-TSOP1-0813
K6F1008V2C-LF55
K6F1008V2C-LF70
K6F1008V2C-F
K6F1008V2C-YF55
K6F1008V2C-YF70
32-STSOP1
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TSOPI
Abstract: No abstract text available
Text: HY62V8200B Series 256Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62V8200B is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. The HY62V8200B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is
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HY62V8200B
256Kx8bit
32-sTSOPI-8X13
32-TSOPI
-8X20
32pin
TSOPI
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Untitled
Abstract: No abstract text available
Text: Advance information June 2000 AS6UA5128 1.65V to 3.6V 512Kx8 Intelliwatt low-power CMOS SRAM with one chip enable • Low power consumption: STANDBY Features • AS6UA5128 • Intelliwatt active power circuitry • Industrial and commercial temperature ranges available
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AS6UA5128
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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KM68S2000LT-12L
Abstract: KM68S2000LT-15L
Text: KM68S2000 Family Preliminary CMOS SRAM Document Title 256Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. 0.0 History Draft Date Remark Initial draft September 30, 1997 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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KM68S2000
256Kx8
256Kx8
KM68S2000LT-12L
KM68S2000LT-15L
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KM68U512ALE-L
Abstract: KM68V512ALTE-10L KM68V512ALE-L 85FV 32-STSOP
Text: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.6pm CMOS • Organization : 64Kx8 • Power Supply Voltage KM60V512A family : 3.3VKJ.3V KM68U512A family : 3.0V±0.3V
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KM68V512A,
KM68U512A
64Kx8
64Kx8
KM60V512A
32-SOP-525,
32-T30P1-0820F,
32-TSOP1-Q813
KM68V512A
KM68U512ALE-L
KM68V512ALTE-10L
KM68V512ALE-L
85FV
32-STSOP
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Untitled
Abstract: No abstract text available
Text: Preliminary CMOS SRAM KM68V1000E, KM68U1000E Family Document Title 128Kx8 bit Low Power and Low Voltage CMOS Static RAM Révision History Revision No. 0.0 History Design target Draft Data Remark Septem ber 9, 1998 Prelim inary The attached datasheets are provided by SAM SU N G Electronics. SAM SU N G Electronics CO., LTD. reserves the right to change the specifications and
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OCR Scan
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KM68V1000E,
KM68U1000E
128Kx8
1000E
525mil)
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PDF
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Z3CS
Abstract: 32TSOP
Text: KM68V1000C, KM68U1000C Family CMOS SRAM 128K x8 bit Low Power and Low voltage CMOS static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4 >m CMOS • Organization: 128KX8 • Power Supply Voltage : KM68V1000C fam ily: 3.3VK3.3V KM68U1OOOC family : 3.0V±0.3V
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KM68V1000C,
KM68U1000C
128KX8
KM68V1000C
KM68U1OOOC
32-SOP-525,
32-TSOP1-0820F/R,
32-TSOP1-OB13
KM68U1Q00C
Z3CS
32TSOP
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ELL04
Abstract: No abstract text available
Text: Advance K M 6 8 V 5 1 2 B , K M 6 8 U 5 1 2 B Fami l y D o c u m e n t CMOS SRAM liti 64Kx8 bit Low Power and Low Voltage C M O S Static RAM R evisio n No. H is to ry D raft Data D esign ta rg e t N o ve m b e r 25th 1997 Remark A dvance T h e attached da ta she ets are prepared and a p p ro ve d by S A M S U N G E lectronics. S A M S U N G E lectro nics C O ., LTD. re se rve the
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OCR Scan
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64Kx8
68V512B
ELL04
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PDF
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Untitled
Abstract: No abstract text available
Text: K M 6 8 V 2 0 0 0 , K M 6 8 U 2 0 0 0 Fami l y CM OS SRAM Dacuro ent T\t\ 2 56 Kx 8 bit Low Power and Low Voltage C M O S Static RAM R e v is io n N o . H is to ry D raft D ata R em ark 0.0 Design target January 30th 1997 Advance 0.1 Initial draft April 7th 1997
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OCR Scan
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KM68V2000
70/85ns
KM68V2000I,
68U2000,
KM68U2000I
85/100ns
0820F)
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KM68U4000CL-L
Abstract: 3A3103
Text: Advance KM68V4000C, KM68U4000C Family CMOS SRAM 512Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.35|jm CMOS • Organization : 512Kx8 • Power Supply Voltage KM68V4000C Family : 3.3±Q.3V KM68U4000C Family : 3.0±0.3V
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OCR Scan
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KM68V4000C,
KM68U4000C
512Kx8
512Kx8
KM68V4000C
32-SOP-S25,
32-TSDP2-400F/R
32-TSOP1-OB13
KM68U4000CL-L
3A3103
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1S08S
Abstract: No abstract text available
Text: KM68FV1000, KM68FS1000, KM68FR1Q00 Family CMOS SRAM 128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4nm Full CMOS • Organization : 128Kx8 bit > Power Supply Voltage KM 68FV1000 Fam ily. 3.0V - 3.6V
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OCR Scan
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KM68FV1000,
KM68FS1000,
KM68FR1Q00
128Kx8
68FV1000
68FS1000
68FR1000
32-SOP-525,
32-TSO
P1-0820F,
1S08S
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2183A
Abstract: No abstract text available
Text: KM68V1000C, KM68U1000C Family CMOS SRAM 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4|jm CMOS • Organization : 128K x 8 • Power Supply Voltage KM68V1000C family : 3.3V ± 0.3V KM68U1000C family : 3.0V ± 0.3V
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OCR Scan
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KM68V1000C,
KM68U1000C
128Kx8
KM68V1000C
32-SOP,
32-TSOP
32-sTSOP
2183A
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marking TACS
Abstract: No abstract text available
Text: H Y 6 2V 8 20 0B S eries 256K x 8 b it CMOS SRAM DESCRIPTION FEATURES The HY62V8200B is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. The HY62V8200B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is
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OCR Scan
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HY62V8200B
32-STSOPI-8X13
32-TSOPI
-8X20
HY62V8200B
marking TACS
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