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    33 DB AT 2 GHZ Search Results

    33 DB AT 2 GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    THS3202DGK Texas Instruments 2GHz Current Feedback Amplifier 8-VSSOP -40 to 85 Visit Texas Instruments
    THS3202DGNRG4 Texas Instruments 2GHz Current Feedback Amplifier 8-MSOP-PowerPAD -40 to 85 Visit Texas Instruments
    THS3202DGNR Texas Instruments 2GHz Current Feedback Amplifier 8-MSOP-PowerPAD -40 to 85 Visit Texas Instruments
    THS3202DGNG4 Texas Instruments 2GHz Current Feedback Amplifier 8-MSOP-PowerPAD -40 to 85 Visit Texas Instruments
    THS3202DGN Texas Instruments 2GHz Current Feedback Amplifier 8-MSOP-PowerPAD -40 to 85 Visit Texas Instruments
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    33 DB AT 2 GHZ Price and Stock

    Fairview Microwave Inc SLNA-180-33-30-SMA

    3 dB NF, 2 GHz to 18 GHz, Low Noise Broadband Amplifier with 15 dBm, 33 dB Gain and SMA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com SLNA-180-33-30-SMA
    • 1 $2468.21
    • 10 $2304.9
    • 100 $2304.9
    • 1000 $2304.9
    • 10000 $2304.9
    		Buy Now

    Fairview Microwave Inc SPA-265-33-01-K

    Medium Power GaAs Amplifier at 1 Watt P1dB Operating from 18 GHz to 26.5 GHz with 38 dBm IP3, 2.92mm Input, 2.92mm Output and 33 dB Gain
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com SPA-265-33-01-K
    • 1 $4831.19
    • 10 $4575.7
    • 100 $4575.7
    • 1000 $4575.7
    • 10000 $4575.7
    		Buy Now

    33 DB AT 2 GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FP750SOT343

    Abstract: MIL-HDBK-263
    Text: PRELIMINARY DATA SHEET FP750SOT343 PACKAGED LOW NOISE, MEDIUM POWER PHEMT • • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 21 dBm P-1dB 2 GHz ♦ 17 dB Power Gain at 2 GHz ♦ 33 dBm IP3 at 2 GHz ♦ 45% Power-Added-Efficiency DESCRIPTION AND APPLICATIONS


    Original     		PDF FP750SOT343 FP750SOT343 FP750 OT343 SC-70) surface-mou63. MIL-HDBK-263

    SAV-541

    Abstract: SAV-541 S-PARAMETER MODEL ATF-54143 MMM1362 N8975A
    Text: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required


    Original     		PDF 45-6GHz ATF-54143 SAV-541+ MMM1362 2002/95/EC) SAV-541 SAV-541 S-PARAMETER MODEL ATF-54143 MMM1362 N8975A

    TAV-541

    Abstract: FG873 N4000A N8975A tav 541
    Text: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +19 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required


    Original     		PDF 45-6GHz TAV-541+ FG873 2002/95/EC) TAV-541 FG873 N4000A N8975A tav 541

    Untitled

    Abstract: No abstract text available
    Text: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +19 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required


    Original     		PDF 45-6GHz TAV-541+ FG873 2002/95/EC)

    SAV-541

    Abstract: SAV-541 S-PARAMETER MODEL SAV541 avago marking -2
    Text: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required


    Original     		PDF 45-6GHz ATF-54143 SAV-541+ MMM1362 2002/95/EC) MMBT3906* 840nH 840nH SAV-541 SAV-541 S-PARAMETER MODEL SAV541 avago marking -2

    Untitled

    Abstract: No abstract text available
    Text: Ultra Low Noise, Medium Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required


    Original     		PDF 45-6GHz ATF-54143 SAV-541+ MMM1362

    Untitled

    Abstract: No abstract text available
    Text: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required


    Original     		PDF 45-6GHz ATF-54143 SAV-541+ MMM1362

    TAV-541

    Abstract: No abstract text available
    Text: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +19 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required


    Original     		PDF 45-6GHz ATF-54143 ATF-541M4 TAV-541+ FG873 2002/95/EC) MMBT3906* 840nH TAV-541

    TAV-541

    Abstract: FG873 N4000A N8975A vgd schematic diagram tav 541 V1525
    Text: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +19 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required


    Original     		PDF 45-6GHz TAV-541+ FG873 2002/95/EC) TAV-541 FG873 N4000A N8975A vgd schematic diagram tav 541 V1525

    Untitled

    Abstract: No abstract text available
    Text: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +19 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required


    Original     		PDF 45-6GHz TAV-541+ FG873 2002/95/EC)

    Untitled

    Abstract: No abstract text available
    Text: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required


    Original     		PDF ATF-54143 45-6GHz SAV-541+ MMM1362 2002/95/EC)

    SAV-541

    Abstract: SAV-541 S-PARAMETER MODEL "3570 1210" ATF-54143 MMM1362 N8975A ATF-54143 application notes
    Text: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required


    Original     		PDF 45-6GHz ATF-54143 SAV-541+ MMM1362 2002/95/EC) SAV-541 SAV-541 S-PARAMETER MODEL "3570 1210" ATF-54143 MMM1362 N8975A ATF-54143 application notes

    Untitled

    Abstract: No abstract text available
    Text: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +19 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required


    Original     		PDF 45-6GHz TAV-541+ FG873

    SAV-541

    Abstract: No abstract text available
    Text: Ultra Low Noise, Medium Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required


    Original     		PDF 45-6GHz ATF-54143 SAV-541+ MMM1362 SAV-541

    2SA1977

    Abstract: NE68133 NE97733 S21E
    Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97733 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE68133 • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB at 1 GHz 33 SOT 23 STYLE


    Original     		PDF NE97733 NE68133 NE97733 2SA1977 2SA1977 NE68133 S21E

    transistor npn c 6073

    Abstract: 433 SOT-23 transistor npn d 2078 944 1L2 NE68139
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fx= 8 GHz • LOW NOISE FIGURE: 1,2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB AT 2 GHz 00 CHIP 35 (MICRO-X) 33 (SOT 23 STYLE) 39 (SOT 143 STYLE)


    OCR Scan     		PDF NE681 OT-23) transistor npn c 6073 433 SOT-23 transistor npn d 2078 944 1L2 NE68139

    TMD0708-2

    Abstract: No abstract text available
    Text: TOSHIBA POWER GaAs MMIC MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD0708-2 Features * • HIGH POWER BROAD BAND INTERNALLY MATCHED Pi dB— 33 dBm at 7. 1 to 8. 5 GHz ■ HIGH GAIN HERMETICALLY SEALED PACKAGE GldB= 22 dB at 7. 1 to 8. 5 GHz ABSOLUTE MAXIMUM RATINGS Ta=25°C


    OCR Scan     		PDF TMD0708-2 2-11E1A) TMD0708-2

    Untitled

    Abstract: No abstract text available
    Text: Wcinschel Model 33 dc to 8.5 GHz MEDIUM POWER FIXED COAXIAL ATTENUATOR 25 WATTS Type N Connectors F X PRESS 8 0 0 -5 4 2 -4 4 5 7 POWER COEFFICIENT: <0.002 dB/dB/watt TEMPERATURE COEFFICIENT: <0.0004 dB/dB/°C TEMPERATURE RANGE: -55 °C to 125 °C. CALIBRATION: Insertion loss test data supplied at dc,


    OCR Scan     		PDF MIL-STD-348 MIL-C-39012 MIL-A-3933.

    TMD0507-2

    Abstract: No abstract text available
    Text: TOSHIBA • TD^EM? Q0214Ö7 b33 H POWER GaAs MMIC MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD0507-2 Features: ■ HIGH POWER ■ BROAD BAND INTERNALLY MATCHED PldB= 33 dBm at 5. 1 to 7. 2 GHz ■ HIGH GAIN ■ HERMETICALLY SEALED PACKAGE GldB= 22 dB at 5. 1 to 7. 2 GHz


    OCR Scan     		PDF QDS14Ã TMD0507-2 TMD0507 2-11E1A) TMD0507-2

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1213-2 TECHNICAL DATA FEATURES: • HIGH POWER PidB = 33-5 dBm at 12.7 GHz to 13.2 GHz ■ HIGH GAIN GidB = 7.5 dB at 12.7 GHz to 13.2 GHz ■ BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE


    OCR Scan     		PDF TIM1213-2 I213-2

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA • 0 0 2 1 4 0 7 b33 H ^ J j POWER GaAs MMIC MICROWAVE SEMICONDUCTOR TMD0507-2 TECHNICAL DATA Features^ ■ BROAD BAND INTERNALLY MATCHED ■ HIGH POWER PldB= 33 dBm at 5. 1 to 7. 2 GHz ■ HERMETICALLY SEALED PACKAGE ■ HIGH GAIN GldB= 22 dB at 5. 1 to 7. 2 GHz


    OCR Scan     		PDF TMD0507-2 TMD0507 2-11E1A)

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA POWER GaAs MMIC MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD0507-2 • Features• ■ HIGH POWER ■ BROAD BAND INTERNALLY MATCHED PldB= 33 dBm at 5. 1 to 7. 2 GHz ■ HIGH GAIN ■ HERMETICALLY SEALED PACKAGE GldB= 22 dB at 5. 1 to 7. 2 GHz ABSOLUTE MAXIMUM RATINGS Ta=25°C


    OCR Scan     		PDF TMD0507-2

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs MMIC S9751 PRELIMINARY Features • High power - Po = 33 dBm at Pin = 2 dBm • Super low distortion - Padj = -65 dBc at Po = 32 dBm, 600 kHz offset • High gain - Gp = 31 dB at Pin = 2 dBm • Input/output port matched to 5 0 ii


    OCR Scan     		PDF S9751 MW20050196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1 C10CI7247 0 0 2 1 4 0 ^ 40b • POWER GaAs MM 1C MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD0708-2 Features* ■ HIGH POWER ■ BROAD BAND INTERNALLY MATCHED PldB= 33 dBm at 7.1 to 8. 5 GHz ■ HIGH GAIN ■ HERMETICALLY SEALED PACKAGE GldB= 22 dB at 7. 1 to 8.5 GHz


    OCR Scan     		PDF C10CI7247 TMD0708-2 TMD0708-2 2-11E1A) TDT7247