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    330000P Price and Stock

    Mercury Electronic Ind Co Ltd 3QHTF53-30.000-PD

    30.0 MHz XO 3.3V 5.0X3.2 MM PD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 3QHTF53-30.000-PD 5
    • 1 -
    • 10 $17.97
    • 100 $7.7
    • 1000 $6.45
    • 10000 $6.45
    		Buy Now

    Mercury Electronic Ind Co Ltd 18QHTF53-30.000-PD

    30.0 MHz XO 1.8V 5.0X3.2 MM PD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 18QHTF53-30.000-PD 5
    • 1 -
    • 10 $17.97
    • 100 $7.7
    • 1000 $6.45
    • 10000 $6.45
    		Buy Now

    Mercury Electronic Ind Co Ltd 25QHTF53-30.000-PD

    30.0 MHz XO 2.5V 5.0X3.2 MM PD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 25QHTF53-30.000-PD 5
    • 1 -
    • 10 $17.97
    • 100 $7.7
    • 1000 $6.45
    • 10000 $6.45
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    TDK Corporation C1608X7R1H334K080AC

    Multilayer Ceramic Capacitors MLCC - SMD/SMT .33UF 50V 10% 0603
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI C1608X7R1H334K080AC Reel 908,000 4,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.04
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    Kyocera AVX Components KGM31PR71H334KU

    Multilayer Ceramic Capacitors MLCC - SMD/SMT KGM31PR71H334KU NEW GLOBAL PN 50V 0.33uF A 581-KGM31PR71H334KU
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI KGM31PR71H334KU Reel 152,000 4,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.045
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    Find more 330000P price and stock on Findchips.com

    330000P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CGH55030

    Abstract: 256qam CGH55030F CGH5503 CGH55030F-TB ATC600L
    Text: CGH55030F 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F ideal


    Original     		PDF CGH55030F CGH55030F CGH5503 CGH55030 256qam CGH5503 CGH55030F-TB ATC600L

    CGH5503

    Abstract: CGH55030 CGH55030F1 CGH55030P1 CGH55030-TB s 0934 RO4350B ATC600L 128-QAM
    Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		PDF CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 CGH5503 CGH55030 CGH55030P1 CGH55030-TB s 0934 RO4350B ATC600L 128-QAM

    32QAM circuit

    Abstract: CGH55030 CGH5503 CGH55030F1 CGH55030P1 CGH55030-TB 440166 ATC600L
    Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		PDF CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 32QAM circuit CGH55030 CGH5503 CGH55030P1 CGH55030-TB 440166 ATC600L

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH55030F 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F ideal


    Original     		PDF CGH55030F CGH55030F CGH5503

    CGH55030F2

    Abstract: No abstract text available
    Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		PDF CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2

    capacitor Y5S 022

    Abstract: BC Z5U 1KV BC RR 152 1KV X7R 3KV 3300pf radial ceramic disc Vishay BC 038 IEC EN 60065 REPORT S100K VISHAY Z5U 3KV EIA-198 method 103 47pF 50V NPO ceramic disk capacitor
    Text: VISHAY INTE R TE C HNO L O G Y , IN C . INTERACTIVE data book CERAMIC DISC CAPACITORS vishay BCcomponents vsD-db0071-0409 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vsD-db0071-0409 capacitor Y5S 022 BC Z5U 1KV BC RR 152 1KV X7R 3KV 3300pf radial ceramic disc Vishay BC 038 IEC EN 60065 REPORT S100K VISHAY Z5U 3KV EIA-198 method 103 47pF 50V NPO ceramic disk capacitor

    680000pf

    Abstract: C2012JB CC0603 X7R C5750
    Text: 42144_C2012 1/4 Ceramic Capacitors C Series For Mid Voltage SMD FEATURES • The unique design structure for mid voltage enables a compact size with high voltage resistance. • Rated voltage Edc: 100, 250 and 630V. • C3225, C4532 and C5750 types are specific to reflow soldering.


    Original     		PDF C2012 C3225, C4532 C5750 C1608 CC0603) C2012 CC0805) C3216 CC1206) 680000pf C2012JB CC0603 X7R

    Ceramic Singlelayer Capacitors

    Abstract: IEC 384-14/2 X1 440 Y1 250 wkp 4n7 wko 400v 4n7 disc ceramic capacitor WKO 4n7 M X1 WYO 5n M 250 103 Ceramic Disc Capacitors 101 Ceramic Disc Capacitors 2n2, Y2 ±20%, 250V Y2 CLASS CAPACITOR wkp 2n2 m
    Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book CERAMIC SINGLELAYER CAPACITORS vishay DRALORIC vsD-db0012-0011 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vsD-db0012-0011 Ceramic Singlelayer Capacitors IEC 384-14/2 X1 440 Y1 250 wkp 4n7 wko 400v 4n7 disc ceramic capacitor WKO 4n7 M X1 WYO 5n M 250 103 Ceramic Disc Capacitors 101 Ceramic Disc Capacitors 2n2, Y2 ±20%, 250V Y2 CLASS CAPACITOR wkp 2n2 m

    CGH55030F2

    Abstract: CGH55030P2 CGH5503 CGH55030 CGH55030-TB JESD22 CGH55030P2 APPLICATION NOTE
    Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		PDF CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 CGH5503 CGH55030 CGH55030-TB JESD22 CGH55030P2 APPLICATION NOTE

    32QAM circuit

    Abstract: ATC600S 32QAM modulation CGH5503 CGH55030 CGH55030F1 CGH55030P1 CGH55030-TB
    Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		PDF CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 32QAM circuit ATC600S 32QAM modulation CGH5503 CGH55030 CGH55030P1 CGH55030-TB

    RO4350B

    Abstract: No abstract text available
    Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		PDF CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 RO4350B

    220v AC voltage stabilizer schematic diagram

    Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
    Text: Prices Guaranteed Until July 31,1998 Catalog 594 Search Products Suppliers New Products CD Only Products How to Order Web Site Help Select an Option Main Menu New Products Help See pages 194 and 196 for new Trimmer Potentiometers. See pages 41 and 42 for new EEPROMS.


    Original     		PDF Batte48 220v AC voltage stabilizer schematic diagram 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008

    Vitramon

    Abstract: vitramon VJ 45015 vj91 vitramon Marking
    Text: VJ Tip ‘N RingTM Vishay Vitramon Multilayer Ceramic Chip Capacitors FEATURES • • • • • • • Ideal for telephone line Tip ‘N Ring filtering. Replaces high voltage, leaded, film capacitors. Rated for telecommunications voltages. Saves board space and weight.


    Original     		PDF VJ9174Y474KXP 27-Nov-03 Vitramon vitramon VJ 45015 vj91 vitramon Marking

    2012X7R

    Abstract: C5750
    Text: 42144_C2012 1/4 C Series Ceramic Capacitors For Mid Voltage SMD SHAPES AND DIMENSIONS APPLICATIONS Snapper circuits for switching power supply, ringer circuits for telephone and modem, or other general high voltage circuits. L W • The unique design structure for mid voltage enables a compact


    Original     		PDF C2012 C3225, C4532 C5750 C1608 CC0603) C2012 CC0805) C3216 CC1206) 2012X7R

    CGH55030P2

    Abstract: CGH5503 CGH55030 CGH55030F2 CGH55030-TB JESD22
    Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		PDF CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 CGH5503 CGH55030 CGH55030-TB JESD22

    ATC600L

    Abstract: CGH55030F2 ATC600S CGH55030 CGH55030P2 CGH5503 cree driver CGH40025F CGH55030-TB CGH55
    Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		PDF CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 ATC600L ATC600S CGH55030 CGH5503 cree driver CGH40025F CGH55030-TB CGH55

    RO4350B

    Abstract: No abstract text available
    Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		PDF CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 RO4350B

    Untitled

    Abstract: No abstract text available
    Text: Model LPE-6562 Vishay Dale VISHAY Transformers/lnductors Surface Mount, Gapped and Ungapped Custom Configurations Available ELECTRICAL SPECIFICATIONS Multiple winds are connected in parallel Inductance Range: 10|j.H to 330000p.H, measured at 0.10V RMS @ 10kHz


    OCR Scan     		PDF LPE-6562 330000p 10kHz EIA-481 27-Apr-99

    Untitled

    Abstract: No abstract text available
    Text: LPE-6562 VISHAY Vishay Dale Surface Mount Transformers/lnductors Gapped and Ungapped Custom Configurations Available E L E C T R IC A L S P E C IF IC A T IO N S Multiple winds are connected in parallel Inductance Range: 10pH to 330000pH, measured at 0.10V RMS @ 10kHz


    OCR Scan     		PDF LPE-6562 330000pH, 10kHz EIA-481 28-Aug-02

    Untitled

    Abstract: No abstract text available
    Text: A COMPANY OF MODEL LPE-6562 Inductors Surface Mount, Gapped and Ungapped FEATURES • Totally integrated manufacturing • Pick and place compatible • Statistical process controlled • Tape packaging per EIA-481 • Low cost • Qualification data available


    OCR Scan     		PDF LPE-6562 EIA-481

    Untitled

    Abstract: No abstract text available
    Text: EIN UNTERNEHMEN VON Allgemeine Angaben General Features Roederstein Einfuhrung / Introduction Scheibenkondensatoren / Disc capacitors Seite / Paqe 4 4 1. Nennwerte-Reihe / Nominal rate series 2. MeB- und Prufbedingungen Measuring and testing conditions 3. Kennzeichnung / Marking


    OCR Scan     		PDF

    12.0.12 300mA transformer

    Abstract: transformer 220 to 12-0-12 SMPT0706 12-0-12 1A transformer EPC17 BOBBIN power transformer 12012 slf7745 NLL4532 zo 107 tdk mlf3216
    Text: SM Components at a Glance Product name Multilayer Ceramic Chip Capacitor Type or Series Part No. Dimensions (mm) [inches] Shape W T 1 [.039] 0.5 [.020] 0.5 [.020] Class I 0.5 to 330pF Class II 220 to 33000pF 1.6 [.063] 0.8 [.031] 0.8 [.031] Class I 0.5 to 1000pF


    OCR Scan     		PDF C1005 CC0402] C1608 CC0603] 12.0.12 300mA transformer transformer 220 to 12-0-12 SMPT0706 12-0-12 1A transformer EPC17 BOBBIN power transformer 12012 slf7745 NLL4532 zo 107 tdk mlf3216

    Untitled

    Abstract: No abstract text available
    Text: M ODEL LPE-6562 Inductors Surface Mount, Gapped and Ungapped FEATURES • • • • • • • • • Totally integrated manufacturing Pick and place compatible Statistical process controlled Tape packaging per EIA-481 Low cost Qualification data available


    OCR Scan     		PDF LPE-6562 EIA-481

    Untitled

    Abstract: No abstract text available
    Text: M O DEL L P E -6562 In d u c to rs S u rfa c e M o u n t, G a p p e d an d U n g a p p e d FEATURES • • • • • • • • • • • • • • • • • Totally integrated manufacturing Pick and place compatible Statistical process controlled


    OCR Scan     		PDF EIA-481 LPE-6562