W3E64M72S-XBX

Contextual Info: White Electronic Designs W3E64M72S-XBX ADVANCED* 64Mx72 DDR SDRAM BENEFITS FEATURES Data rate = 200, 250, 266 and 333Mbs 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP 2.5V ±0.2V core power supply

Contextual Info: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM BENEFITS FEATURES „ Data rate = 200, 250, 266 and 333Mbs* „ 66% Space Savings vs. TSOP „ Package: „ Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm „ 55% I/O reduction vs TSOP

Contextual Info: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM FEATURES BENEFITS „ Data rate = 200, 250, 266 and 333Mbs* „ 66% Space Savings vs. TSOP „ Package: „ Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm „ 55% I/O reduction vs TSOP

W3E32M72S-XBX

Contextual Info: White Electronic Designs W3E32M72S-XBX 32Mx72 DDR SDRAM FEATURES „ Data rate = 200, 250, 266, 333Mbs „ Package: BENEFITS • 219 Plastic Ball Grid Array PBGA , 32 x 25mm „ 2.5V ±0.2V core power supply „ 2.5V I/O (SSTL_2 compatible) „ Differential clock inputs (CK and CK#)

Contextual Info: W3E32M72S-XB3X 32Mx72 DDR SDRAM FEATURES GENERAL DESCRIPTION  Data rate = 200, 250, 266, 333Mbs* The 256MByte 2Gb DDR SDRAM is a high-speed CMOS, dy nam ic ran dom-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a quadbank DRAM.

Contextual Info: W3E64M72S-XBX 64Mx72 DDR SDRAM GENERAL DESCRIPTION FEATURES The 512MByte 4Gb DDR SDRAM is a high-speed CMOS, dynamic random-access, memory using 9 chips containing 536,870,912 bits. Each chip is internally configured as a quad-bank DRAM.  Data rate = 200, 250, 266 and 333Mbs*

Contextual Info: W3E32M72S-XSBX 32Mx72 DDR SDRAM FEATURES GENERAL DESCRIPTION  Data rate = 200, 250, 266, 333Mbs* The 256MByte 2Gb DDR SDRAM is a high-speed CMOS, dy nam ic ran dom-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a quadbank DRAM.

Contextual Info: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM BENEFITS FEATURES „ Data rate = 200, 250, 266 and 333Mbs* „ 66% Space Savings vs. TSOP „ Package: „ Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm „ 55% I/O reduction vs TSOP

VCCQ15

Contextual Info: White Electronic Designs W3E64M72S-XSBX PRELIMINARY* 64Mx72 DDR SDRAM BENEFITS FEATURES Data rate = 200, 250, 266 and 333Mbs 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP

W3E32M72S-XSBX

Contextual Info: White Electronic Designs W3E32M72S-XSBX 32Mx72 DDR SDRAM FEATURES BENEFITS Data rate = 200, 250, 266, 333Mbs 73% Space Savings vs. TSOP Package: • 44% Space Savings vs FPBGA • 208 Plastic Ball Grid Array PBGA , 16 x 22mm Reduced part count 2.5V ±0.2V core power supply

tsop 66

Abstract: W3E32M72S-XBX
Contextual Info: White Electronic Designs W3E32M72S-XBX 32Mx72 DDR SDRAM FEATURES BENEFITS Data rate = 200, 250, 266, 333Mbs 40% SPACE SAVINGS vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 32 x 25mm 34% I/O reduction vs TSOP 2.5V ±0.2V core power supply

Contextual Info: W3E64M72S-XSBX 64Mx72 DDR SDRAM GENERAL DESCRIPTION FEATURES The 512MByte 4Gb DDR SDRAM is a high-speed CMOS, dynamic random-access, memory using 9 chips containing 536,870,912 bits. Each chip is internally configured as a quad-bank DRAM.  Data rate = 200, 250, 266 and 333Mbs*

Contextual Info: W3E32M72S-XBX 32Mx72 DDR SDRAM FEATURES GENERAL DESCRIPTION  Data rate = 200, 250, 266, 333Mbs* The 256MByte 2Gb DDR SDRAM is a high-speed CMOS, dy nam ic ran dom-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a quadbank DRAM.

W3E32M72S-XSBX

Abstract: Theta JC of FBGA
Contextual Info: White Electronic Designs W3E32M72S-XSBX 32Mx72 DDR SDRAM FEATURES „ Data rate = 200, 250, 266, 333Mbs „ Package: BENEFITS „ • 44% Space Savings vs FPBGA • 208 Plastic Ball Grid Array PBGA , 16 x 22mm „ 2.5V ±0.2V core power supply „ 2.5V I/O (SSTL_2 compatible)

VCCQ15

Contextual Info: White Electronic Designs W3E64M16S-XSBX PRELIMINARY* 64Mx16 DDR SDRAM FEATURES BENEFITS „ DDR SDRAM rate = 200, 250, 266, 333* „ „ Package: „ • 60 Plastic Ball Grid Array PBGA , 10 x 12.5mm „ 1Gb upgrade to 512Mb 60 FBGA SDRAM „ 2.5V ±0.2V core power supply

W3E32M64S-XBX

Contextual Info: White Electronic Designs W3E32M64S-XBX 32Mx64 DDR SDRAM BENEFITS FEATURES „ DDR SDRAM rate = 200, 250, 266, 333Mb/s „ 41% SPACE SAVINGS vs. TSOP „ Package: „ Reduced part count • „ Reduced trace lengths for lower parasitic capacitance 219 Plastic Ball Grid Array PBGA ,

16M x 16 DDR TSOP-66

Contextual Info: White Electronic Designs W3E32M64SA-XBX 32Mx64 DDR SDRAM BENEFITS FEATURES „ DDR SDRAM rate = 200, 250, 266, 333Mb/s „ 41% SPACE SAVINGS vs. TSOP „ Package: „ Reduced part count • „ Reduced trace lengths for lower parasitic capacitance 219 Plastic Ball Grid Array PBGA ,

Contextual Info: W3E32M64S-XBX 32Mx64 DDR SDRAM FEATURES BENEFITS  DDR SDRAM rate = 200, 250, 266, 333Mb/s*  41% SPACE SAVINGS vs. TSOP  Package:  Reduced part count • 219 Plastic Ball Grid Array PBGA , 25mm x 25mm, 625mm2  Reduced trace lengths for lower parasitic capacitance

Contextual Info: W3E64M16S-XSBX 64Mx16 DDR SDRAM FEATURES GENERAL DESCRIPTION  DDR SDRAM rate = 200, 250, 266, 333* The 128MByte 1Gb DDR SDRAM is a high-speed CMOS, dy nam ic ran dom-access, memory using 2 chips containing 536,870,912 bits. Each chip is internally configured as a quadbank DRAM.

Contextual Info: White Electronic Designs W3E64M16S-XNBX 64Mx16 DDR SDRAM FEATURES „ DDR SDRAM rate = 200, 250, 266, 333* „ Package: BENEFITS „ • 60 Plastic Ball Grid Array PBGA , 10mm x 12.5mm x 1.5mm „ 1Gb upgrade to 512Mb 60 FBGA SDRAM „ 2.5V ±0.2V core power supply

Sn63pB37 tds

Abstract: W3E32M64S-XSBX TSOP66
Contextual Info: White Electronic Designs W3E32M64S-XSBX 32Mx64 DDR SDRAM FEATURES „ DDR SDRAM rate = 200, 250, 266, 333* „ Package: BENEFITS „ • 208 Plastic Ball Grid Array PBGA , 13 x 22mm „ 2.5V ±0.2V core power supply „ 2.5V I/O (SSTL_2 compatible) „ Differential clock inputs (CK and CK#)

Contextual Info: W3E32M64S-XSBX 32Mx64 DDR SDRAM FEATURES BENEFITS  DDR SDRAM rate = 200, 250, 266, 333*  73% Space Savings vs. FPBGA  Package: • 43% Space Savings vs TSOP • 208 Plastic Ball Grid Array PBGA , 13 x 22mm  Reduced part count  2.5V ±0.2V core power supply

Contextual Info: W3E32M64S-XB3X 256 – 32Mx64 DDR SDRAM FEATURES BENEFITS  DDR SDRAM rate = 200, 250, 266, 333*  73% Space Savings vs. FPBGA  Package: • 43% Space Savings vs TSOP • 208 Plastic Ball Grid Array PBGA , 13 x 22mm  Reduced part count

Contextual Info: W3E32M64SA-XBX 32Mx64 DDR SDRAM FEATURES GENERAL DESCRIPTION  DDR SDRAM rate = 200, 250, 266, 333Mb/s* The 256MByte 2Gb DDR SDRAM is a high-speed CMOS, dy nam ic ran dom-access, memory using 4 chips containing 536,870,912 bits. Each chip is internally configured as a quadbank DRAM.