Untitled
Abstract: No abstract text available
Text: MR16R0824 6/8/C/G AN1 RAMBUS MODULE SERIAL PRESENCE DETECT RIMM SPD Specification based on 128M RDRAM(B-die, 32s banks) Version 1.1 October 2000 Change History Version 1.1 (Oct. ′00) Based on the Samsung 128M RDRAM (A-die) SPD Specification 1.02 version.
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MR16R0824
MR16R082C
8Mx16
K4R271669A-NCK8/NCK7/NCG6)
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K7D803671B-HC33
Abstract: K7D803671B-HC30 K7D801871B-HC35 K7D801871B-HC37 K7D803671B K7D803671B-HC25 K7D803671B-HC35 K7D803671B-HC37
Text: K7D803671B K7D801871B 256Kx36 & 512Kx18 SRAM Document Title 8M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 -Initial document. July. 2000 Advance Rev. 0.1 -ZQ tolerance changed from 10% to 15% Aug. 2000 Advance Rev. 0.2
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K7D803671B
K7D801871B
256Kx36
512Kx18
-HC16
012MAX
K7D803671B-HC33
K7D803671B-HC30
K7D801871B-HC35
K7D801871B-HC37
K7D803671B
K7D803671B-HC25
K7D803671B-HC35
K7D803671B-HC37
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S 357
Abstract: GS815018AB-250 GS815018AB-300 GS815018AB-333 GS815018AB-357
Text: Product Preview GS815018/36AB-357/333/300/250 119-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 250 MHz–357 MHz 2.5 V VDD HSTL I/O Features Functional Description • Register-Register Late Write mode, Pipelined Read mode
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GS815018/36AB-357/333/300/250
119-Bump
8150xxA
S 357
GS815018AB-250
GS815018AB-300
GS815018AB-333
GS815018AB-357
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Untitled
Abstract: No abstract text available
Text: Product Preview GS815018/36AB-357/333/300/250 119-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 250 MHz–357 MHz 2.5 V VDD 1.5 V or 1.8 V HSTL I/O Features Functional Description • Register-Register Late Write mode, Pipelined Read mode
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GS815018/36AB-357/333/300/250
119-Bump
8150xxA
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GS8150V36AB-300I
Abstract: GS8150V36AB-250I GS8150V36AGB-357 8150VXXA
Text: GS8150V36AB-357/333/300/250 119-Bump BGA Commercial Temp Industrial Temp 512K x 36 18Mb Register-Register Late Write SRAM 250 MHz–357 MHz 1.8 V VDD 1.5 V or 1.8 V HSTL I/O Features Functional Description • Register-Register Late Write mode, Pipelined Read mode
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GS8150V36AB-357/333/300/250
119-Bump
GS8150V36A
8150xxA
GS8150V36AB-300I
GS8150V36AB-250I
GS8150V36AGB-357
8150VXXA
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Untitled
Abstract: No abstract text available
Text: GS815018/36AB-357/333/300/250 119-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 250 MHz–357 MHz 2.5 V VDD 1.5 V or 1.8 V HSTL I/O Features Functional Description • • • • • • • • • •
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GS815018/36AB-357/333/300/250
119-Bump
GS815018/36A
8150xxA
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Untitled
Abstract: No abstract text available
Text: MR18R0824 6/8/C/G BN1 RAMBUS MODULE SERIAL PRESENCE DETECT RIMM SPD Specification based on 144M RDRAM(B-die, 32s banks) Verion 1.1 October 2000 Change History Version 1.1 (Oct. ′00) Based on the Samsung 144M RDRAM (A-die) SPD Specification 1.02 version.
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MR18R0824
MR18R082C
8Mx18
K4R441869B-NCK8/NCK7/NCG6)
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357mhz
Abstract: No abstract text available
Text: MR18R1624 6/8/C/G MN0 RAMBUS MODULE SERIAL PRESENCE DETECT RIMM SPD Specification based on 288M RDRAM(M-die, 32s banks) Version 1.1a November 2000 Change History Version 1.1 (Oct. ′00) Based on the Direct RambusTM SPD Specification 1.1. Version 1.1a (Nov. ′00)
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MR18R1624
MR18R162C
16Mx18
K4R881869M-NCK8/NCK7/NCG6)
357mhz
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Untitled
Abstract: No abstract text available
Text: Product Preview GS8150V18/36AB-357/333/300/250 119-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 250 MHz–357 MHz 1.8 V VDD 1.5 V or 1.8 V HSTL I/O Features Functional Description • Register-Register Late Write mode, Pipelined Read mode
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GS8150V18/36AB-357/333/300/250
119-Bump
GS8150V18/36A/25
8150VxxA
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Untitled
Abstract: No abstract text available
Text: GS815018/36AB-357/333/300/250 119-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 250 MHz–357 MHz 2.5 V VDD 1.5 V or 1.8 V HSTL I/O Features Functional Description • Register-Register Late Write mode, Pipelined Read mode
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GS815018/36AB-357/333/300/250
119-Bump
GS815018/36A
8150xxA
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Untitled
Abstract: No abstract text available
Text: KMMR16R84 6/8/C/G AC1 RAMBUS MODULE SERIAL PRESENCE DETECT SPD Specification For 128M RDRAM(2nd Gen.) based RIMM REV. 1.03 February 2000 Revision History Revision 1.0 (June ′99) It is based on the RAMBUS SPD Specification 1.0 version. Revision 1.01 (Oct. ′99)
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KMMR16R84
300MHz
266MHz
02ver
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Untitled
Abstract: No abstract text available
Text: KMMR18R84 6/8/C/G AC1 RAMBUS MODULE SERIAL PRESENCE DETECT SPD Specification For 144M RDRAM(2nd Gen.) based RIMM REV. 1.03 February 2000 Revision History Revision 1.0 (June ′99) It is based on the RAMBUS SPD Specification 1.0 version. Revision 1.01 (Oct. ′99)
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KMMR18R84
300MHz
266MHz
02ver
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A23 851 diode
Abstract: B92 diode A79 marking code transistor marking A21 marking .A55 marking code ADH a74 marking code A84 diode b78 board 9535H
Text: TM RIMM Module with 256/288Mb RDRAMs Preliminary Revision History * Rev. 0.95 Date : 2001.07.23 1. Page2, 7, 8, 10, 12 : Add 2D RIMM part Rev. 0.95 / July.01 1 TM RIMM Module with 256/288Mb RDRAMs Preliminary Overview Key Timing Parameters/Part Numbers The‘Rambus RIMMTM module is a general purpose
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256/288Mb
16/18TE122
BYTE123
BYTE124
BYTE125
BYTE126
18bit
BYTE128
BYTE127
A23 851 diode
B92 diode
A79 marking code
transistor marking A21
marking .A55
marking code ADH
a74 marking code
A84 diode
b78 board
9535H
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GS8150V18AB-250
Abstract: GS8150V18AB-300 GS8150V18AB-333 GS8150V18AB-357
Text: GS8150V18/36AB-357/333/300/250 119-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 250 MHz–357 MHz 1.8 V VDD 1.5 V or 1.8 V HSTL I/O Features Functional Description • Register-Register Late Write mode, Pipelined Read mode
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GS8150V18/36AB-357/333/300/250
119-Bump
8150VxxA
GS8150V18AB-250
GS8150V18AB-300
GS8150V18AB-333
GS8150V18AB-357
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672047
Abstract: 1472181 RF-12A 35278 435013 AB-190 AN-181 BUF600 OPA660 low-pass Passive filter design
Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132
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OPA660
MOPA660
OPA660.
672047
1472181
RF-12A
35278
435013
AB-190
AN-181
BUF600
OPA660
low-pass Passive filter design
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sda 2087 N
Abstract: trac 40800 dram memory module 1993 marking code b35 HME DRAM 1616 marking B44
Text: Direct Rambus RIMM with 128/144Mbit RDRAMs Preliminary Overview Key Timing Parameters/Part Numbers The Rambus RIMMTM module is a general purpose highperformance memory subsystem suitable for use in a broad range of applications including computer memory, personal
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128/144Mbit
128Mb/144Mb
sda 2087 N
trac 40800
dram memory module 1993
marking code b35
HME DRAM 1616
marking B44
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Untitled
Abstract: No abstract text available
Text: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 374.0MHz Part No: MP03699 Model: TB0530A Rev No: 1 A. MAXIMUM RATING: 1. Operating Temperature: -40°C ~ +85°C
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MP03699
10dBm
25MHz
346MHz
357MHz
361MHz
391MHz
425MHz
469MHz
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circuit of rowa television
Abstract: toshiba b54
Text: TOSHIBA TH M R2E2Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 18-BIT 64M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR2E2Z is a 33,554,432-word by 18-bit direct rambus dynamic RAM module consisting of 2 TC59RM818MB Direct Rambus DRAMs on a printed circuit board.
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432-WORD
18-BIT
18-bit
TC59RM818MB
B2M-wordX18
32M-wordX
600MHz
32M-word
711MHz
circuit of rowa television
toshiba b54
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Untitled
Abstract: No abstract text available
Text: THMR2N16-6/-7/-8 TOSHIBA TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 268,435,456-WORD BY 16-BIT 512M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR2N16 is a 268,435,456-word by 16-bit direct rambus dynamic RAM module consisting of 16 TC59RM816MB and Direct Rambus DRAMs on a printed circuit board.
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THMR2N16-6/-7/-8
456-WORD
16-BIT
THMR2N16
TC59RM816MB
256M-word
600MHz
-16CSP
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TH M R2 E4Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 18-BIT 128M Bytes Direct Rambus D RAM MODULE DESCRIPTION The THMR2E4Z is a 67,108,864-word by 18-bit direct rambus dynamic RAM module consisting of 4 TC59RM818MB Direct Rambus DRAMs on a printed circuit board.
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108f864-WORD
18-BIT
864-word
18-bit
TC59RM818MB
64M-word
64M-wordXl8
600MHz
711MHz
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64H40
Abstract: circuit of rowa television CM05
Text: TOSHIBA TH M R2 N8Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 134,217,728-WORD BY 16-BIT 256M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR2N8Z is a 134,217,728-word by 16-bit direct rambus dynamic RAM module consisting of 8 TC59RM816MB Direct Rambus DRAMs on a printed circuit board.
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728-WORD
16-BIT
16-bit
TC59RM816MB
128M-word
600MHz
128M-wordX16
711MHz
64H40
circuit of rowa television
CM05
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DGA4
Abstract: loqb 47KQ B23A B85A Toshiba Rambus IC
Text: TOSHIBA THMR2N2Z-6/-7/-8 T O SH IBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 33,554,432-W ORD BY 16-BIT 64M Bytes Direct Rambus D R A M M O D U LE DESCRIPTION The THMR2N2Z is a 33,554,432-word by 16-bit direct rambus dynamic RAM module consisting of 2
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432-WORD
16-BIT
16-bit
TC59RM816MB
32M-wordXl6
32M-word
600MHz
711MHz
DGA4
loqb
47KQ
B23A
B85A
Toshiba Rambus IC
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cmos book
Abstract: No abstract text available
Text: 2 5 6 M /2 8 8 M -b it b a s e d R IM M HYMR2xxx16 18 H with 256/288Mb RDRAMs PRELIMINARY O v e rv ie w K e y T im in g P a ra m e te rs /P a rt N u m b e rs T h e R a m b u s R I M M m o d u le is a g e n e ra l p u r p o s e T h e f o llo w in g t a b le lis ts th e f r e q u e n c y a n d la te n c y b in s
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HYMR2xxx16
256/288Mb
13tCYCLE
357MHz
110mA
180mA
130mA
750mA
120mA
190mA
cmos book
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a40 5pin
Abstract: 64mx16 THMRL LDQB 5pin
Text: TO SHIBA THMR1N8E-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 16-BIT 128M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR1N8E is a 67,108,864-word by 16-bit direct rambus dynamic RAM module consisting of TC59RM716MB Direct Rambus DRAMs on a printed circuit board.
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864-WORD
16-BIT
16-bit
TC59RM716MB
64M-wordX16
64M-word
64M-wordXl6
711MHz
800MHz
a40 5pin
64mx16
THMRL
LDQB 5pin
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