Untitled
Abstract: No abstract text available
Text: ESMT Preliminary F49L320UA/F49L320BA 32 Mbit 4M x 8/2M x 16 3V Only CMOS Flash Memory 1. FEATURES z z z z z z z z z z - Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 4,194,304x8 / 2,097,152x16 switchable by BYTE pin Compatible with JEDEC standard
|
Original
|
PDF
|
F49L320UA/F49L320BA
304x8
152x16
9s/11s
|
Untitled
Abstract: No abstract text available
Text: ESMT Preliminary F49L320UA/F49L320BA 32 Mbit 4M x 8/2M x 16 3V Only CMOS Flash Memory 1. FEATURES z z z z z z z z z z - Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 4,194,304x8 / 2,097,152x16 switchable by BYTE pin Compatible with JEDEC standard
|
Original
|
PDF
|
F49L320UA/F49L320BA
304x8
152x16
9s/11s
|
MX29LV033
Abstract: No abstract text available
Text: ADVANCED INFORMATION MX29LV033A 32M-BIT [4M x 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10-year data retention
|
Original
|
PDF
|
MX29LV033A
32M-BIT
200nA
10-year
PM1017
OCT/06/2003
MX29LV033
|
CR10
Abstract: M58LR128HB M58LR128HT VFBGA56
Text: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program
|
Original
|
PDF
|
M58LR128HT
M58LR128HB
VFBGA56
CR10
M58LR128HB
M58LR128HT
VFBGA56
|
28F008C3
Abstract: 28F016C3 28F032C3 28F160C3 28F320C3 28F800C3 sr5 diode
Text: E PRELIMINARY 3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 28F008C3, 28F016C3, 28F032C3 28F800C3, 28F160C3, 28F320C3 n n n n n n Flexible SmartVoltage Technology 2.7 V–3.6 V Read/Program/Erase 2.7 V or 1.65 V I/O Option Reduces
|
Original
|
PDF
|
32-MBIT
28F008C3,
28F016C3,
28F032C3
28F800C3,
28F160C3,
28F320C3
64-KB
28F008C3
28F016C3
28F032C3
28F160C3
28F320C3
28F800C3
sr5 diode
|
Untitled
Abstract: No abstract text available
Text: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program
|
Original
|
PDF
|
M58LR128HT
M58LR128HB
|
XCF128XFT64C
Abstract: XCF128XFTG64C xcf128x UG438 v3.0 xilinx jtag cable UG438 XC5VLX330 XC5VLX XCF128X-FTG64 XApp973
Text: R 8 8 Platform Flash XL High-Density Configuration and Storage Device DS617 v3.0.1 January 07, 2010 Product Specification Features • In-System Programmable Flash Memory Optimized for Virtex -5 or Virtex-6 FPGA Configuration • High-Performance FPGA Bitstream Transfer up to
|
Original
|
PDF
|
DS617
16-bits)
128-Mb
16-bit
256-Kb
XCF128XFT64C
XCF128XFTG64C
xcf128x
UG438 v3.0
xilinx jtag cable
UG438
XC5VLX330
XC5VLX
XCF128X-FTG64
XApp973
|
F90000
Abstract: No abstract text available
Text: PRELIMINARY MX29LA129M H/L 128M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • Configuration - 16,777,216 x 8 / 8,388,608 x 16 switchable
|
Original
|
PDF
|
MX29LA129M
128M-BIT
250mA
90R/100ns
PM1171
F90000
|
Untitled
Abstract: No abstract text available
Text: ADVANCED INFORMATION MX29LV033 32M-BIT [4M x 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • Minimum 100,000 erase/program cycle • 10-year data retention GENERAL FEATURES • 4,194,304 x 8 byte structure • Sixty-four Equal Sectors with 64KB each - Any combination of sectors can be erased with erase
|
Original
|
PDF
|
MX29LV033
32M-BIT
250mA
AUG/10/2000
NOV/26/2001
JAN/28/2002
PM0679
|
Untitled
Abstract: No abstract text available
Text: MX29LV033C 32M-BIT [4M x 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES GENERAL FEATURES • 4,194,304 x 8 byte structure • Sixty-four Equal Sectors with 64KB each - Any combination of sectors can be erased with erase suspend/resume function • Eighteen Sector Groups
|
Original
|
PDF
|
MX29LV033C
32M-BIT
250mA
MAY/26/2006
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY MX29LV065B 64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 byte structure • One hundred twenty-eight Equal Sectors with 64K byte each - Any combination of sectors can be erased with erase suspend/resume function
|
Original
|
PDF
|
MX29LV065B
64M-BIT
256-byte
PM1082
MAY/13/2004
JUL/07/2004
JUN/08/2004
|
117h68
Abstract: CR10 J-STD-020B
Text: M30L0R7000T1 M30L0R7000B1 128 Mbit 8Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers
|
Original
|
PDF
|
M30L0R7000T1
M30L0R7000B1
54MHz
117h68
CR10
J-STD-020B
|
M58LT128HSB
Abstract: CR10 M58LT128HST
Text: M58LT128HST M58LT128HSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program
|
Original
|
PDF
|
M58LT128HST
M58LT128HSB
TBGA64
M58LT128HSB
CR10
M58LT128HST
|
CR10
Abstract: M58LT128HSB M58LT128HST
Text: M58LT128HST M58LT128HSB 128-Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply, Secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program
|
Original
|
PDF
|
M58LT128HST
M58LT128HSB
128-Mbit
TBGA64
CR10
M58LT128HSB
M58LT128HST
|
|
|
Untitled
Abstract: No abstract text available
Text: MX29LV065B 64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 byte structure • One hundred twenty-eight Equal Sectors with 64K byte each - Any combination of sectors can be erased with erase suspend/resume function
|
Original
|
PDF
|
MX29LV065B
64M-BIT
128-byte
JAN/09/2006
|
M58LR128HC
Abstract: M58LR128HD VFBGA44 CR10 882F
Text: M58LR128HC M58LR128HD 128 Mbit x16, Mux I/O, Multiple Bank, Multilevel interface, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program
|
Original
|
PDF
|
M58LR128HC
M58LR128HD
VFBGA44
M58LR128HC
M58LR128HD
VFBGA44
CR10
882F
|
Untitled
Abstract: No abstract text available
Text: ADVANCED INFORMATION MX29LV065 64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 byte structure • One hundred twenty-eight Equal Sectors with 32K byte each - Any combination of sectors can be erased with erase suspend/resume function
|
Original
|
PDF
|
MX29LV065
64M-BIT
256-byte
100ns
OCT/14/2002
PM0893
|
MX29LV128DBT
Abstract: SA144 mx29lv128db SA244 MX29LV128DBTC-90Q SA152 equivalent A60000-A6FFFF MX29LV128 56-TSOP MX29LV128DBT2I-90Q
Text: PRELIMINARY MX29LV128D T/B 128M-BIT [16M x 8/8M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 16,777,216 x 8 / 8,388,608 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 255 • Extra 128-word sector for security
|
Original
|
PDF
|
MX29LV128D
128M-BIT
128-word
MX29LV128DBT
SA144
mx29lv128db
SA244
MX29LV128DBTC-90Q
SA152 equivalent
A60000-A6FFFF
MX29LV128
56-TSOP
MX29LV128DBT2I-90Q
|
Untitled
Abstract: No abstract text available
Text: ADVANCED INFORMATION MX29LV065 64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 byte structure • One hundred twenty-eight Equal Sectors with 32K byte each - Any combination of sectors can be erased with erase suspend/resume function
|
Original
|
PDF
|
MX29LV065
64M-BIT
256-byte
OCT/14/2002
NOV/22/2002
MAY/22/2003
PM0893
|
032XM
Abstract: No abstract text available
Text: ADVANCE INFORMATION AMDB Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce
|
OCR Scan
|
PDF
|
Am29LV033C
63-ball
40-pin
032XM
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY 3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 28F008C3, 28F016C3, 28F032C3 28F800C3, 28F160C3, 28F320C3 n Flexible SmartVoltage Technology — 2.7 V-3.6 V Read/Program/Erase — 2.7 V or 1.65 V I/O Option Reduces Overall System Power
|
OCR Scan
|
PDF
|
32-MBIT
28F008C3,
28F016C3,
28F032C3
28F800C3,
28F160C3,
28F320C3
64-KB
|
63-Ball
Abstract: Am29LV033C 5337A
Text: ADVANCE INFORMATION AMD£I Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • ■ Supports Common Flash Memory Interface (CFI) ■ Erase Suspend/Erase Resume
|
OCR Scan
|
PDF
|
Am29LV033C
63-ball
40-pin
5337A
|
F160B3TA
Abstract: No abstract text available
Text: PRELIMINARY SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 28F400B3, 28F800B3, 28F160B3, 28F320B3 28F008B3, 28F016B3, 28F032B3 n Flexible SmartVoltage Technology — 2.7 V-3.6 V Read/Program/Erase — 12 V V p p Fast Production Programming
|
OCR Scan
|
PDF
|
32-MBIT
28F400B3,
28F800B3,
28F160B3,
28F320B3
28F008B3,
28F016B3,
28F032B3
64-KB
F160B3TA
|
TE28F320
Abstract: 29058
Text: SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 28F400B3, 28F800B3, 28F160B3, 28F320B3 28F008B3, 28F016B3, 28F032B3 • Flexible SmartVoltage Technology — 2.7 V-3.6 V Read/Program/Erase — 12 V Vpp Fast Production Programming ■ 2.7 V or 1.65 V I/O Option
|
OCR Scan
|
PDF
|
32-MBIT
28F400B3,
28F800B3,
28F160B3,
28F320B3
28F008B3,
28F016B3,
28F032B3
64-KB
TE28F320
29058
|