Untitled
Abstract: No abstract text available
Text: E G 8, G / CANADA/ OPTOELEK 47E D • 3D30L10 000031b 3 «CANA HUV Dual Series 2525BG r Features • • • Dual Channel Photodiode Shielded Amplifier Groundable Case • • • Built-in Low Noise Amplifier Wide Spectral Range Oxide Passivated Structure
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3D30L10
000031b
2525BG)
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Untitled
Abstract: No abstract text available
Text: E fi 8, G/CANADA/OPTOELEK n c i i 3D3DblG ÜÜÜD12L. 0b3 • CANA T1 1D E le c tro Silicon Avalanche Photodiodes OptiCS C30902E, C30902S, C3 0921E, C30921S DATA SHEET High Speed Solid State Detectors for Fiber Optic and Very Low Light-Level Applications RCA Type C30902E ava
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C30902E,
C30902S,
0921E,
C30921S
C30902E
L-571
L-933
C30921E
C30902E
C30902S
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Untitled
Abstract: No abstract text available
Text: VTB4051 VTB Process Photodiodes P A C K A G E DIMENSIONS inch mm CASE 13 PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. These diodes offer very high shunt resistance and good blue response.
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VTB4051
3D30L
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PDF
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RCA 467
Abstract: rca 807 RCA SOLID STATE C30116 infrared emitting diode led 1060-nm mW
Text: E G & G/CANADA/OPTOELEK ID D • J3030bl0 G000D13 SSM ■ CANA V S f l l ÆM Electro Optics ■ and Devices Solid State Emitters Developmental Type C30116, C30116/F 1060 nm Indium Gallium Arsenide Infrared Surface Emitters for Pulsed or Continuous D C Operation
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J3030bl0
GD0DG13
C30116,
C30116/F
l-737
C301K/F
C30116
C30116/F
RCA 467
rca 807
RCA SOLID STATE
infrared emitting diode led 1060-nm mW
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Untitled
Abstract: No abstract text available
Text: VT B 1 0 1 2B , 1013B VTB Process Photodiodes PACKAGE DIMENSIONS inch mm * ïtst PRODUCT DESCRIPTION CASE 17 ABSOLUTE MAXIMUM RATINGS Storage Temperature: -4 0 °C to 110°C Operating Temperature: -4 0 °C to 1 10°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
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1013B
VTB1012B
VTB1013B
3D30L
Q0D15S7
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PDF
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HgCdTe
Abstract: j15te J15TE3 HGCDTE detector J15TE4 PbSe Judson judson PA-100 10-MC31 Thermoelectric Cooler photoconductive MCT
Text: Short-Wave MCT Detectors 2 to 5 |im General Figure 24-1 Typical Detectivity vs Wavelength for J15TE Series Short-Wave HgCdTe Detectors J1 5 T E S eries "Short-W ave" d etec to rs a re photoconductive H gC dT e e le m e n ts on th e rm o ele ctric coolers. T hey a re designed
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J15TE
J15TE2
J15TE3
J15TE4;
J15TE4
303DbQ5
HgCdTe
HGCDTE detector
PbSe Judson
judson PA-100
10-MC31
Thermoelectric Cooler
photoconductive MCT
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PDF
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RCA c30808
Abstract: TAG60 3G30 L568 C30822 photodiode C30807 C30809 C30810 d28j 35XL
Text: E G & G/CANADA/OPTOELEK 3G30blQ ID □□□□!□! 7T3 ICANA Photodiode I t C J C30807, C30808, C30809 C30810, C30822, C30831 Optics E le c ,r o l DATA SHEET ' V f'S T 3 N-Type Silicon p-i-n Photodetectors Broad Range of Photo sensitive Surface Areas 0.2 mm2 to 100 mm2
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OCR Scan
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3G30blQ
C30807,
C30808,
C30809
C30810,
C30822,
C30831
l-571
C30810
C30807
RCA c30808
TAG60
3G30
L568
C30822 photodiode
C30810
d28j
35XL
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Untitled
Abstract: No abstract text available
Text: VT400 Series PHOTOCONDUCTIVE C E L L PACKAGE DIMENSIONS inch mm ABSOLUTE MAXIMUM RATINGS PARAM ETER CONTINUOUS POWER DISSIPATION SYMBOL RATING UNITS Pd 400 mW DEMAND (20 MINUTES) DERATE ABOVE 25° C 600 mW APd/ A T 8.0 mW/°C Ta - 40 to + 7 5 °C TEM PERATURE RANGE
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VT400
R10/R100)
VT43N
3D30L
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PDF
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VTB5051B
Abstract: No abstract text available
Text: VTB 5051B VTB Process Photodiodes P A C K A G E DIMENSIONS inch mm CASE 14 PRODU CT DESCRIPTION Planar silicon photodiode in a "flat" window, dual lead TO-5 package. The package incorporates an infrared rejec tion filter. Cathode is common to the case. These diodes have very high shunt
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VTB5051B
Temp50
JJ397
VTB5051B
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PDF
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Untitled
Abstract: No abstract text available
Text: VTP8651 VTP Process Photodiodes P A C K A G E DIMENSIONS inch mm ^ - N (0 .5 8 ) .1 7 2 (4 .3 7 ) .0 9 8 ,0 3 9 (3 .3 0 ) •042 (1 .0 7 ) ( 1 .0 0 ) (2 .4 9 ) " NOM. OPTICAL .0 3 2 (0 .8 1 ) I r IC A TH O D Ek -1 T" ! + L. I 1 .1 6 2 (4 .1 1 ) .1 5 2 (3 .8 6 )
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VTP8651
3D30LCH
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