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    3E3G Search Results

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    3E3G Price and Stock

    CTS Corporation CA32C33E3GLR

    XTAL OSC XO 33.3330MHZ HCMOS TTL
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    DigiKey CA32C33E3GLR Reel 3,000
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    Avnet Americas CA32C33E3GLR Reel 8 Weeks 3,000
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    Mouser Electronics CA32C33E3GLR
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    CTS Corporation CA25C33E3GNR

    XTAL OSC XO 33.3330MHZ HCMOS TTL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CA25C33E3GNR Reel 3,000
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    Avnet Americas CA25C33E3GNR Reel 8 Weeks 3,000
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    Mouser Electronics CA25C33E3GNR
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    CTS Corporation CA70C33E3GNT

    XTAL OSC XO 33.3330MHZ HCMOS TTL
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    DigiKey CA70C33E3GNT Reel 1,000
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    Avnet Americas CA70C33E3GNT Reel 8 Weeks 1,000
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    Avnet Abacus CA70C33E3GNT Reel 10 Weeks 1,000
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    CTS Corporation CA20C33E3GNR

    XTAL OSC XO 33.3330MHZ HCMOS TTL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CA20C33E3GNR Reel 3,000
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    Avnet Americas CA20C33E3GNR Reel 8 Weeks 3,000
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    Mouser Electronics CA20C33E3GNR
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    CTS Corporation CA20C33E3GMR

    XTAL OSC XO 33.3330MHZ HCMOS TTL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CA20C33E3GMR Reel 3,000
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    Avnet Americas CA20C33E3GMR Reel 8 Weeks 3,000
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    Mouser Electronics CA20C33E3GMR
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    3E3G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    T2D 53

    Abstract: T2D 44 CNC34 EDBF2464CRW ca1342 t2d 96 41A123 T2D 48 t2d 46 T2D 56
    Text: ^EDI EDI8F2464C 61ÉCTRONC 065K3NS N C . 64Kx24 SRAM Module 64Kx24 Static RAM CMOS, High Speed Module Features The EDI8F2464C is a high speed 1.5 megabit Static RAM 64Kx24 bit CMOS Static module organized as 64Kx24. This module is constructed Random Access Memory


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    065H3NS EDI8F2464C 64Kx24 EDI8F2464C 64Kx24. 64Kx4 323G114 T2D 53 T2D 44 CNC34 EDBF2464CRW ca1342 t2d 96 41A123 T2D 48 t2d 46 T2D 56 PDF

    TME 57

    Abstract: D02S D012 D031 EDI8M3264C
    Text: ELECTRONIC DESIGNS I NC S1E D 32301m ü0012Sfa S7b B E L D ^ED I EDI8M3264C Electronic Design» tnc.a High Speed Two Megabit SRAM Module 64Kx32 Static RAM CMOS, High Speed Module T -V i6 - 2 3 -JY Features The EDI8M3264Cis a high speed 2megabit State RAM 64Kx32 bit CMOS Static


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    000125b EDI8M3264C 64Kx32 EDI8M3264C 64Kx4 oI8M3264C 3S30114 00012h0 EDI8U3264C TME 57 D02S D012 D031 PDF

    3E3G

    Abstract: 4-173856-1 F KO 317
    Text: 1 * PC B O A R E D D I M E N S I O N u l- afcflggt'M-g*: 0.5 NOTE iâË; 10.6 ± 7 3. 0.3 (THK) 1. (TOL) 'J>m 2. fcO. 3 : 1 .6±0 . 15 : ±0. 1 2-03.2 2 02.4 7.35 r - MAX ABSEILx A o 2mmcof&e]-r"iflijæ ^ ^ ¿T £ Äfi-^c=0«Ä#g; £: ifflÆ. L. ~C «t'Ô'-C #


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    J-10560 C-173856 3E3G 4-173856-1 F KO 317 PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI784MS V ^E D I 4Megx8NAND Flash flE C T B O M C OESGN& WC. PRELIMINARY 4Mx8 Bit NAND Flash CMOS, Monolithic F eatu res The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density


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    EDI784MS EDI784MSV 528-byte 250ms funI784MSV EDI784MSV50BB ED1784MSV50FB EDI784MSV50BB EDI7MMSV50BC 300MW PDF

    Untitled

    Abstract: No abstract text available
    Text: m o i _ EDI8M8257C Electronic Designs Inc. High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C is a 2048K bit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic two megabit


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    EDI8M8257C 256Kx8 EDI8M8257C 2048K 128Kx8 the128Kx8 EDI8M8257LP) 323011M PDF

    D17103

    Abstract: IC-7901 17P103 KG3T PD17103GS 22r j ju hx AEI 7707 PJ73 oj4 1001 YCIJ
    Text: M o s sfs m s ê M O S I n t e g r a t e d C irc u it / 4 tf'y h / P D 1 m f è T - ï 1 3 , 1 7 1 3 A 7 7 '- 7 - f i 'P a > l 'n - 7 ‘ juPD 17103, 17103(A) f i, R O M l K ^ - f I- (S12 x C PU C tt, 7 16 t i - y t-), RAM 16 x 4 t -y K I /O iti — h-


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    PDF

    g4 5c

    Abstract: NT30C
    Text: R e s s e 163 □ HM3 + / - 107. P T C : . 7/1/3 □ P E P A T I N G P A NG E : - 5 5 T □ 1 0 0 C 3 T E P A G P PA NCE : - 0 5 TP 150 C * T H E R M A L T I M E C E N 3 T A N T :3 0 3 E C MAX * D I 3 3 I P A T I D N IO□ N3 T A N T ! P , 5 nW/ 3 M I N F'PWPF: P A T I N G : , P 5 W 3 3 5 S , D U R A T E T P ICn


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    FATINGn25WP25 teff11 g4 5c NT30C PDF