Untitled
Abstract: No abstract text available
Text: User’s Manual V850ES/KF2 32-bit Single-Chip Microcontrollers Hardware PD70F3728 μPD70F3729 Document No. U17704EJ2V0UD00 2nd edition Date Published December 2006 N CP(K) 2005 Printed in Japan [MEMO] 2 User’s Manual U17704EJ2V0UD NOTES FOR CMOS DEVICES
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V850ES/KF2
32-bit
PD70F3728
PD70F3729
U17704EJ2V0UD00
U17704EJ2V0UD
VIH9318
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Untitled
Abstract: No abstract text available
Text: User’s Manual V850ES/KG2 32-bit Single-Chip Microcontrollers Hardware PD70F3731 μPD70F3732 Document No. U17703EJ2V0UD00 2nd edition Date Published October 2006 N CP(K) 2005 Printed in Japan [MEMO] 2 User’s Manual U17703EJ2V0UD NOTES FOR CMOS DEVICES
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V850ES/KG2
32-bit
PD70F3731
PD70F3732
U17703EJ2V0UD00
U17703EJ2V0UD
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Untitled
Abstract: No abstract text available
Text: User’s Manual V850E/MA3 32-Bit Single-Chip Microcontrollers Hardware µPD703131A µPD703131AY µPD703132A µPD703132AY µPD703133A µPD703133AY µPD703134A µPD703134AY µPD703136A µPD703136AY µPD70F3134A µPD70F3134AY Document No. U16397EJ3V0UD00 3rd edition
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V850E/MA3
32-Bit
PD703131A
PD703131AY
PD703132A
PD703132AY
PD703133A
PD703133AY
PD703134A
PD703134AY
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Untitled
Abstract: No abstract text available
Text: Preliminary User’s Manual V850ES/SG2 32-Bit Single-Chip Microcontroller Hardware µPD703262HY µPD703263HY µPD70F3263HY µPD703272HY µPD703273HY µPD70F3273HY µPD703282HY µPD703283HY µPD70F3283HY Document No. U17644EJ1V0UD00 1st edition Date Published September 2005 N CP(K)
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V850ES/SG2
32-Bit
PD703262HY
PD703263HY
PD70F3263HY
PD703272HY
PD703273HY
PD70F3273HY
PD703282HY
PD703283HY
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48C20
Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout
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3608C
48C20
SA125
AT49BV640DT-70CU
AT49BV640D
AT49BV640DT
AT49BV640D-70CU
SWITCH SA125
278000 eprom
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SAMSUNG MCP
Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)
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KBB0xB400M
16Mx16)
4Mx16)
80-Ball
80x12
SAMSUNG MCP
ECH information
KBB0xB400M
BA102
ba4901
UtRAM Density
BA5101
samsung NAND memory
BGA180
ba30 transistor
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s3c46
Abstract: S3C4510B S3C4510 SDLC 8044 Transistor TEO 1279 diagram TCON resistor 270 ohm ARM7 Series 38109 0x303C
Text: S3C4510B 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW Samsung's S3C4510B 16/32-bit RISC microcontroller is a cost-effective, high-performance microcontroller solution for Ethernet-based systems. An integrated Ethernet controller, the S3C4510B, is designed for use in
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S3C4510B
S3C4510B
16/32-bit
S3C4510B,
208-pin
s3c46
S3C4510
SDLC 8044
Transistor TEO 1279
diagram TCON
resistor 270 ohm
ARM7 Series
38109
0x303C
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CompactCellTM Static RAM
Abstract: No abstract text available
Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS
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Am45DL6408G
16-Bit)
8-Bit/512
73-Ball
limitation02
CompactCellTM Static RAM
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GL032A
Abstract: S71GL032A S71GL032
Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this
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S71GL032A
16-bit)
1M/512K/256K
GL032A
S71GL032
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M15451E
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can
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PD29F064115-X
64M-BIT
16-BIT
PD29F064115-X
M15451E
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Untitled
Abstract: No abstract text available
Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised
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K8D6x16UTM
K8D6x16UBM
48TSOP1
16M/16M
08MAX
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IN3064
Abstract: MX25L3225D
Text: MX25L3225D MX25L3225D DATASHEET P/N: PM1432 1 REV. 0.00, SEP. 19, 2008 MX25L3225D Contents FEATURES . 5
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MX25L3225D
PM1432
IN3064
MX25L3225D
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740-0007
Abstract: EN29GL064 6A000
Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and
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EN29GL064
8192K
4096K
16-bit)
740-0007
EN29GL064
6A000
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SA-275
Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J
Text: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document
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Am29PDL129H
S29PL129J
Am29PDL129J
SA-275
2aa 555
SA1127
SA1-108
SA1115
SA298
SA283
SA1117
PDL128G
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LRS1830
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LRS1830 Stacked Chip 256M x16 Boot Block Flash and 32M (x16) SCRAM (Model No.: LRS1830) Spec No.: EL14Z046 Issue Date: January 14, 2003 sharp L R S1 8 3 0 x Handle this document carefully for it contains material protected by international copyright law.
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LRS1830
LRS1830)
EL14Z046
LRS1830
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M29W640DB
Abstract: M29W640D M29W640DT A0-A21 6A000
Text: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ACCESS TIME: 70, 90 ns
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M29W640DT
M29W640DB
TSOP48
TFBGA63
M29W640DB
M29W640D
M29W640DT
A0-A21
6A000
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M420000000
Abstract: FSB073 3FE00
Text: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector
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Am42DL640AG
16-Bit)
73-Ball
5M-1994.
M420000000
FSB073
3FE00
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ADSL Modem circuit diagram
Abstract: ADSL MODEM PROGRAMMING 100-pin dimm KMM330S104CT S5N8946
Text: S5N8946 ADSL/CABLE MODEM 4 SYSTEM MANAGER SYSTEM MANAGER OVERVIEW The S5N8946 ADSL/Cable Modem MCU ’s System Manager has the following functions. • To arbitrate system bus access requests from several master blocks, based on fixed priorities. • To provide the required memory control signals for external memory accesses. For example, if a master block
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S5N8946
S5N8946
ADSL Modem circuit diagram
ADSL MODEM PROGRAMMING
100-pin dimm
KMM330S104CT
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P-TFBGA63-0911-0
Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112
Text: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory
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TC58FVT641/B641FT/XB-70
64-MBIT
TC58FVT641/B641
864-bit,
BA102
BA103
BA110
BA111
P-TFBGA63-0911-0
BA102
PTFBGA-63
diode ba102
BA119
B641
BA95
BA112
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W25Q32FV
Abstract: 25Q32FV 25q32fvsig WINBOND 25Q32FVSIG 25Q32F W25Q32FVSSIG W25Q32FV application note W25Q32F W25Q32 25Q32fvsiq
Text: W25Q32FV 3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI Publication Release Date: April 29, 2013 Revision G W25Q32FV Table of Contents 1. GENERAL DESCRIPTIONS. 5
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W25Q32FV
32M-BIT
208-mil
208-mil
W25Q32FV
25Q32FV
25q32fvsig
WINBOND 25Q32FVSIG
25Q32F
W25Q32FVSSIG
W25Q32FV application note
W25Q32F
W25Q32
25Q32fvsiq
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BGA-101P-M01
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash • Power Supply Voltage of 2.3 V to 2.7 V for FCRAM
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DS05-50208-2E
MB84LD23381EJ-10
101-ball
BGA-101P-M01
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BA102
Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96
Text: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.
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TH50VSF3680/3681AASB
TH50VSF3680/3681AASB
608-bit
864-bit
69-pin
3/3681AASB
XXXh/60h)
BPA/60h)
BA102
diode ba102
diode ba103
TH50VSF3680AASB
A12F
TH50VSF3681AASB
BA41
BA96
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25Q32DWSIG
Abstract: No abstract text available
Text: W25Q32DW 1.8V 32M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI -1- Publication Release Date: September 18, 2012 Revision D W25Q32DW Table of Contents 1. GENERAL DESCRIPTION . 5
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W25Q32DW
32M-BIT
208-MIL
208-MIL,
25Q32DWSIG
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HAI 7203
Abstract: ACT8847 74ACT8847 SN74 multiplier
Text: TEXAS INSTR LOGIC SSE D 0^1723 GQÖS7G3 7 SN74ACT8847 64-Bit Floating Point Unit • Meets IEEE Standard for Single- and DoublePrecision Formats • Performs Floating Point and Integer Add, Subtract, Multiply, Divide, Square Root, and Compare • 64-Bit IEEE Divide in 11 Cycles, 64-Bit Square
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SN74ACT8847
64-Bit
SN74ACT8837
30-ns,
40-ns
50-ns
SN74ACT8847
AGT88X7
HAI 7203
ACT8847
74ACT8847
SN74 multiplier
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