Untitled
Abstract: No abstract text available
Text: SiA907EDJT www.vishay.com Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) ID (A) 0.057 at VGS = -4.5 V -4.5 a 0.095 at VGS = -2.5 V -4.5 a Qg (TYP.) 4.9 nC PowerPAK SC-70-6L Dual S2 4 D1 6 G2 5 • TrenchFET® power MOSFET
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SiA907EDJT
SC-70-6L
SC-70
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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ADG1607BCPZ-REEL71
Abstract: adg1606 1-OF-16 S16 357 RU-28 ADG1607 ADG16061 VS16 ADG1606BCPZ-REEL7 ADG1606BCPZ
Text: 4.5 Ω RON, 16-Channel, Differential 8-Channel, ±5 V,+12 V,+5 V, and +3.3 V Multiplexers ADG1606/ADG1607 FEATURES FUNCTIONAL BLOCK DIAGRAMS 4.5 Ω typical on resistance 1.1 Ω on resistance flatness ±3.3 V to ±8 V dual supply operation 3.3 V to 16 V single supply operation
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16-Channel,
ADG1606/ADG1607
28-lead
32-lead,
ADG1606
1-OF-16
32-Lead
ADG1607BCPZ-REEL71
adg1606
1-OF-16
S16 357
RU-28
ADG1607
ADG16061
VS16
ADG1606BCPZ-REEL7
ADG1606BCPZ
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Untitled
Abstract: No abstract text available
Text: 4.5 Ω RON, 16-Channel, Differential 8-Channel, ±5 V,+12 V,+5 V, and +3.3 V Multiplexers ADG1606/ADG1607 FUNCTIONAL BLOCK DIAGRAMS FEATURES 4.5 Ω typical on resistance 1.1 Ω on resistance flatness ±3.3 V to ±8 V dual supply operation 3.3 V to 16 V single supply operation
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16-Channel,
ADG1606/ADG1607
28-lead
32-lead,
ADG1606
1-OF-16
32-Lead
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mosfet switch circuit diagram
Abstract: s41519rev
Text: Si6926AEDQ New Product Vishay Siliconix Dual N-Channel 2.5-V G-S Input Protected Load Switch PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V 4.5 0.033 @ VGS = 3.0 V 4.2 0.035 @ VGS = 2.5 V 3.9 Qg (Typ) ESD Protected 7.6 2000 V FEATURES
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Si6926AEDQ
S-41519--Rev.
11-Oct-04
mosfet switch circuit diagram
s41519rev
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Untitled
Abstract: No abstract text available
Text: Si6926AEDQ New Product Vishay Siliconix Dual N-Channel 2.5-V G-S Input Protected Load Switch PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V 4.5 0.033 @ VGS = 3.0 V 4.2 0.035 @ VGS = 2.5 V 3.9 Qg (Typ) ESD Protected 7.6 2000 V FEATURES
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Si6926AEDQ
08-Apr-05
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Si6911DQ
Abstract: No abstract text available
Text: Si6911DQ New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 D TrenchFETr Power MOSFETS rDS(on) (W) ID (A) 0.026 @ VGS = -4.5 V -5.1 0.035 @ VGS = -2.5 V -4.5 0.046 @ VGS = -1.8 V -3.9 APPLICATIONS D Load Switch
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Si6911DQ
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si6911DQ New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 D TrenchFETr Power MOSFETS rDS(on) (W) ID (A) 0.026 @ VGS = -4.5 V -5.1 0.035 @ VGS = -2.5 V -4.5 0.046 @ VGS = -1.8 V -3.9 APPLICATIONS D Load Switch
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Si6911DQ
08-Apr-05
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Si6911DQ
Abstract: No abstract text available
Text: Si6911DQ New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 D TrenchFETr Power MOSFETS rDS(on) (W) ID (A) 0.026 @ VGS = -4.5 V -5.1 0.035 @ VGS = -2.5 V -4.5 0.046 @ VGS = -1.8 V -3.9 APPLICATIONS D Load Switch
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Si6911DQ
S-31064--Rev.
26-May-03
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Untitled
Abstract: No abstract text available
Text: Si2333DDS Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 12 RDS(on) () Max. ID (A)a 0.028 at VGS = - 4.5 V - 6e 0.032 at VGS = - 3.7 V - 6e 0.040 at VGS = - 2.5 V - 6e 0.063 at VGS = - 1.8 V - 4.5 0.150 at VGS = - 1.5 V
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Si2333DDS
O-236
OT-23)
Si2333DDS-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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ADG1608
Abstract: D0831 ADG1608BCPZ-REEL71 ADG1608BCPZ-REEL7
Text: 4.5 Ω RON, 4-/8-Channel ±5 V,+12 V, +5 V, and +3.3 V Multiplexers ADG1608/ADG1609 FEATURES FUNCTIONAL BLOCK DIAGRAMS 4.5 Ω typical on resistance 1 Ω on-resistance flatness Up to 470 mA continuous current ±3.3 V to ±8 V dual-supply operation 3.3 V to 16 V single-supply operation
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ADG1608/ADG1609
16-lead
16-lead,
ADG1608
ADG1609
ADG1608
D0831
ADG1608BCPZ-REEL71
ADG1608BCPZ-REEL7
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Untitled
Abstract: No abstract text available
Text: 4.5 Ω RON, 4-/8-Channel ±5 V,+12 V, +5 V, and +3.3 V Multiplexers ADG1608/ADG1609 FUNCTIONAL BLOCK DIAGRAMS FEATURES 4.5 Ω typical on resistance 1 Ω on-resistance flatness Up to 470 mA continuous current ±3.3 V to ±8 V dual-supply operation 3.3 V to 16 V single-supply operation
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ADG1608/ADG1609
16-lead
16-lead,
ADG1608
ADG1609
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si2333dds
Abstract: si2333dd SI2333DDS-T1-GE3
Text: Si2333DDS Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 12 RDS(on) () Max. ID (A)a 0.028 at VGS = - 4.5 V - 6e 0.032 at VGS = - 3.7 V - 6e 0.040 at VGS = - 2.5 V - 6e 0.063 at VGS = - 1.8 V - 4.5 0.150 at VGS = - 1.5 V
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Si2333DDS
O-236
OT-23)
Si2333DDS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si2333dd
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Untitled
Abstract: No abstract text available
Text: 4.5 Ω RON, Triple/Quad SPDT ±5 V, +12 V, +5 V, and +3.3 V Switches ADG1633/ADG1634 Data Sheet FUNCTIONAL BLOCK DIAGRAMS 4.5 Ω typical on resistance 1 Ω on-resistance flatness Up to 206 mA continuous current ±3.3 V to ±8 V dual-supply operation 3.3 V to 16 V single-supply operation
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ADG1633/ADG1634
ADG1633
16-lead
16-lead,
ADG1634
20-lead
20-lead,
ADG1633
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Untitled
Abstract: No abstract text available
Text: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400
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Si1016X
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SI1016X
Abstract: transistor 2432
Text: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400
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Si1016X
2002/95/EC
OT-563
SC-89
18-Jul-08
transistor 2432
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STS6NF20V
Abstract: No abstract text available
Text: STS6NF20V N-CHANNEL 20V - 0.030 Ω - 6A SO-8 2.7V-DRIVE STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS6NF20V 20 V < 0.040 Ω ( @ 4.5 V ) < 0.045 Ω ( @ 2.7 V ) 6A TYPICAL RDS(on) = 0.030 Ω @ 4.5 V TYPICAL RDS(on) = 0.037 Ω @ 2.7 V
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STS6NF20V
STS6NF20V
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Untitled
Abstract: No abstract text available
Text: New Product SiA911ADJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.116 at VGS = - 4.5 V - 4.5a 0.155 at VGS = - 2.5 V - 4.5a 0.205 at VGS = - 1.8 V a - 4.5 • Halogen-free • TrenchFET Power MOSFET
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SiA911ADJ
SC-70
SC-70-6
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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STT4PF20V
Abstract: SOT-23-6l
Text: STT4PF20V P-CHANNEL 20V - 0.090 Ω - 3A SOT23-6L 2.7V-DRIVE STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS STT4PF20V 20 V RDS on ID < 0.11 Ω ( @ 4.5 V ) < 0.135 Ω ( @ 2.7 V ) 3A TYPICAL RDS(on) = 0.090 Ω @ 4.5 V TYPICAL RDS(on) = 0.100 Ω @ 2.7 V
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STT4PF20V
OT23-6L
STT4PF20V
SOT-23-6l
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Untitled
Abstract: No abstract text available
Text: New Product SiA911ADJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.116 at VGS = - 4.5 V - 4.5a 0.155 at VGS = - 2.5 V - 4.5a 0.205 at VGS = - 1.8 V a - 4.5 • Halogen-free • TrenchFET Power MOSFET
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SiA911ADJ
SC-70
SC-70-6
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SC-70-6
Abstract: SiA913DJ-T1-GE3 marking s1
Text: New Product SiA913DJ Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.070 at VGS = - 4.5 V - 4.5a 0.100 at VGS = - 2.5 V - 4.5a 0.140 at VGS = - 1.8 V a - 4.5 • Halogen-free • TrenchFET Power MOSFET
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SiA913DJ
SC-70
SC-70-6
08-Apr-05
SiA913DJ-T1-GE3
marking s1
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75576
Abstract: AN804 VP0300B VP0300L VP0300M VQ2001J VQ2001P
Text: VP0300B/L/M, VQ2001J/P Siliconix PĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = -12 V -2 to -4.5 -1.25 VP0300L 2.5 @ VGS = -12 V -2 to -4.5 -0.32 2.5 @ VGS = -12 V
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VP0300B/L/M,
VQ2001J/P
VP0300B
VP0300L
VQ2001J
VQ2001P
VP0300M
AN804
VP0300B
O226AA,
75576
AN804
VP0300L
VP0300M
VQ2001J
VQ2001P
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Untitled
Abstract: No abstract text available
Text: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400
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Si1016X
2002/95/EC
OT-563
SC-89
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: VP0808B/L/M, VP1008B/L/M P-Channel Enhancement-Mode MOSFET Transistors Product Summary P a rt N u m b er V BR DSS M in (V) rDS(on) M ax (Q) V c sw o tV ) 5 @ VGS- - 1 0 V -2 to -4.5 -0.88 5 @ VGs - -10 V -2 to -4.5 -0.28 VP0808M 5 @ V os - -10 V -2 to -4.5
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VP0808B/L/M,
VP1008B/L/M
VP0808B
VP0808L
VP0808M
VP1008B
VP1008L
VP1008M
Appli-12
P-37655--
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LH532
Abstract: No abstract text available
Text: PRELIMINARY LH532000B-S FEATURES • Low-power supply: 2.6 to 5.5 V • 262,144 x 8 bit organization Byte mode 131,072 x 16 bit organization (Word mode) • Access time: 500 ns (MAX.) at 2.6 V < Vcc < 4.5 V 150 ns (MAX.) at 4.5 V < V cc < 5.5 V • Static operation
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LH532000B-S
40-pin,
600-mil
525-mil
44-pin,
48-pin,
LH532
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